TWI634618B - 多層的陶磁成分結合的方法和設備 - Google Patents

多層的陶磁成分結合的方法和設備 Download PDF

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TWI634618B
TWI634618B TW102107445A TW102107445A TWI634618B TW I634618 B TWI634618 B TW I634618B TW 102107445 A TW102107445 A TW 102107445A TW 102107445 A TW102107445 A TW 102107445A TW I634618 B TWI634618 B TW I634618B
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Taiwan
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component
ceramic
orientation
wires
components
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TW102107445A
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TW201344840A (zh
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強納森Ｈ 哈里斯
羅伯特Ｊ 泰許
法蘭克Ｊ 波利斯
史黛芬Ｐ 努森斯
蘇林 汀內斯古
威廉Ｌ 布萊德利
凱西Ｃ 克勞森
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美商綠洲材料公司
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    • C04B37/005—Joining burned ceramic articles with other burned ceramic articles or other articles by heating by means of an interlayer consisting of a combination of materials selected from glass, or ceramic material with metals, metal oxides or metal salts consisting of glass or ceramic material
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Abstract

一種使用在積體電路製造期間熱性管理一半導體晶圓的晶圓吸盤主要係在最後共燒製程期間，使用一加入氮化鋁微粒的陶磁焊接膏料，將主要由氮化鋁(“AIN”)所產生的部分獨立製造的多層陶磁組件焊接在一起而成。該些組件可具有獨立的分層方位且彼此間透過形成於該些組件的結合表面區段的界面接觸墊片進行電性互連。該些組件可具有複數個內嵌金屬化加熱構件導線、電阻式熱感應器導線、電子信號及電源互連導線和接地保護導線。

Description

多層的陶磁成分結合的方法和設備
本發明關於微電子裝置製造，且更特別地，關於使用於半導體積體電路製造的電子基板的多層陶磁組件。
該微電子工業不斷地致力於進一步縮小組件以增加電子系統的速度及功能。這個導致在例如矽的半導體晶圓上製造高度複雜的積體電路。為了增強一給予的製造晶圓上的可用積體電路良率，已發展出許多製程技術及設備。
晶圓製程發生於一密閉容器內，通常稱之為真空室或製程室，用以保持處理中晶圓免受污染並將它曝露於包含特定空氣的製程以進行清潔、蝕刻、透過例如化學氣相沉積法(CVD)的材料摻雜及沉積。
該晶圓製程室的一主要組件係該基板支撐結構，通常稱之為一“晶圓吸盤”或簡稱為“吸盤”。該晶圓吸盤提供該容器中的晶圓支撐並幫助控制它在製程期間的溫度。典型地，該晶圓吸盤具有持有該晶圓於其上的碟狀頂部面板。在一些製造容器中，該些碟子的直徑通常可高達45公分。已知的使用靜電力來關緊該晶圓的晶圓吸盤類型通常係為E吸盤。
如Dhindsa於美國專利第5,740,016號所示地，該晶圓吸盤可承載包含電性電阻式加熱構件及熱感應器的一些結構，以在製程期間幫助 控制該晶圓的溫度。在製造期間，保持該晶圓於一相同溫度下係較佳的。該加熱構件可由形成於該面板內的一些彎曲的電性電阻式導線所構成。該面板可分成一些區域，每一個具有一些專屬的獨立可供能加熱構件及感應器。因此，位在該吸盤上的一區域上方的晶圓區域相較於其它區域可個別地被加熱。一中空連接管或基座被係連接至該面板並用來攜帶電源線至該些加熱構件、攜帶來自該些感應器的電性信號攜帶線及用於保護結構的電接地線。其它目的包含將製程氣體引入該腔室中。
上面吸盤設計的一個問題在於該管子只可容納有限的接線來電性互連該面板上的大量電性構件。
Yamaguchi等人於美國專利第6,376,811號教示著使用Desai於美國專利第4,799,983號中所述的多層陶磁(MLC)技術來製造該吸盤，在此將兩者一併整合參考之。
大體上，多層陶磁技術涉及例如氧化鋁的耐高溫介電材料與一有機黏結劑的混合微粒，其接著被製帶、乾燥並分成一些可具彈性的“生片”。該些生片中的一些隨著金屬化作用和在對準著其它生片進行堆疊時可形成複雜精細的立體電子內連線的其它電路圖案進行遮蔽及印刷。該堆疊生片以一預定溫度及壓力層壓在一起，並接著以一黏結劑燒光常式慢慢地加熱至汽化掉多數黏結劑材料的400攝氏度左右。該合成的脆弱烘烤出或未脫膠部分接著以一升溫常式進行燃燒，典型地在例如濕潤的氫氮的減少空氣中的氧化鋁陶磁達到1600攝氏度，據此，在該剩餘材料熔化或燒結成具有電性電路流動穿越其中的固態陶磁本體時，任何剩餘的黏結劑材料量汽化掉。在氧化鋁大體上係充當該電性絕緣材料使用之處，例如鎢及鉬 的耐火金屬可被使用於金屬化。
然而，一晶圓吸盤設計者所面臨的另一問題為例如氟之通常使用於該容器內的蝕刻製程腐蝕性氣體。這個對使用於該容器中包含多數金屬及包含氧化鋁的金屬氧化物的材料產生一惡劣環境。因此，設計一吸盤設備的內部結構之中，必須採取特別的保護以考慮到這些破壞性空氣的出現。
克服這些製程氣體的腐蝕性的一個方式涉及將氮化鋁(此後稱之為“AIN”)充當該陶磁使用。氮化鋁係氟腐蝕性的抗腐蝕劑。
該熱膨脹係數(“CTE”)或簡稱為一材料的熱膨脹係數係定義為每一攝氏度的長度變化對上25℃時的長度的比值。它通常给予一超過一溫度範圍的平均值。該鎢及氮化鋁的熱膨脹係數係類似的，在大約4.5ppm/℃。
然而，鎢會是較佳的金屬化金屬，在涉及自由氧氣的共燒製程中，鎢容易氧化。
另一考慮涉及該吸盤中的材料熱傳導率。一材料的熱傳導率(“K”或“TC”)係定義為用於一單位溫度差的熱轉移穿透單位厚度遍及單位面積各處的時間速率或K=WL/AT，其中，W=瓦特，L=以公尺計量的厚度，A=以平方公尺計量的面積和T=以OK或攝氏度計量的溫度差。一更高熱傳導結構可將一局部區域的熱帶離並打亂一吸盤上的熱均勻性。
本發明起因於致力使用多層陶磁技術來改善晶圓吸盤設計。
本發明的主要及次要目的係提供一種用於半導體微電子製 造的改善晶圓吸盤。這些及其它目的係由多層陶磁組件結合方法和所產生的吸盤所達成。
在一些實施例中，提供有一多層共燒陶磁設備，其包括：具有第一電子導線組的一第一多層陶磁組件；具有第二電子導線組的一第二多層陶磁組件；該第一組件包含定向於第一方位的複數層；該第二組件包含定向於不同於該第一方位的第二方位的複數層；以及其中，該第一和第二組件係沿著包含該些組件間的導電接觸的結合區域來結合在一起。
在一些實施例中，該第一組件具有與該第一導線組進行電性連通的第一複數個導電接觸墊片群組；該第二組件具有與該第二導線組進行電性連通的第二複數個導電接觸墊片群組；以及當該些組件被結合在一起時，該第一群組被定位並定向以導電性地接觸該第二群組。
在一些實施例中，該第一方位實際上係平面的。
在一些實施例中，該第二方位實際上係同心圓柱的。
在一些實施例中，該第一方位實際上係垂直於該第二方位。
在一些實施例中，該設備進一步包括：該第一組件包括定位於該區域的一第一表面區段；該第二組件包括定位於該區域的一第二表面區段；以及接觸該些區段的一實際上陶磁焊接結構；其中，該些表面區段中的每一個和該界面結構包括內含氮化鋁的材料。
在一些實施例中，該焊接結構形成介於該些區段之間的一單體陶磁焊接件。
在一些實施例中，該材料包括內含氧化釔的燒結輔助劑。
在一些實施例中，該些導線及墊片包括鎢。
在一些實施例中，該設備係進一步用於充當一電性控制晶圓吸盤來操作。
在一些實施例中，該些導線中的一第一子組充當加熱構件；該些導線中的一第二子組充當連接至熱感應器的電性互連；以及該些導線中的一第三子組充當電性保護。
在一些實施例中，該吸盤包括：一頂部表面區域；其中，該區域係細分為複數個互斥性區域；其中，該第一子組包括分別對應於該些區域來定位的各導線群組。
在一些實施例中，該些導線的該些子組中的每一個係定位在該第一組件的一獨立區域上。
在一些實施例中，該第一組件具有延伸過用以傳輸一冷卻流體的複數相鄰層的至少一導管。
在一些實施例中，該設備進一步包括：該第一組件具有一外部鎢層；被塑形以具有流動穿越其中的冷卻流體傳輸通道的一鎢方塊；以及該方塊係銅焊至該外部層。
在一些實施例中，該設備進一步包括：一散熱器，銅焊至與該第一組件分開的該方塊。
在一些實施例中，該散熱器包括銅。
在一些實施例中，提供有一種電性連通地結合一第一多層陶磁組件至一第二多層陶磁組件的方法，該方法包括：形成具有一第一導電墊片群組的一第一多層陶磁組合子件；形成具有一第二導電墊片群組的一第二多層陶磁組合子件；該第一組合子件包含定向於第一方位的複數層； 該第二組合子件包含以不同於第一方位的第二方位定向的複數層；在該第 一群組上形成內含導電微粒的一第一漿料貼片；圍繞著該第一群組四周施 用內含陶磁微粒的一第二漿料貼片；將包含在該第一和第二群組之間的導 電接觸的該第一和第二組合子件配接；以及透過該第二貼片的燒結結果所 形成的陶磁焊接，以結合該第一組合子件至該第二組合子件的溫度來燒結 該些組合子件。
在一些實施例中，該方法進一步包括：在一未乾燥狀態中脫膠並燒結該漿料。
在一些實施例中，該第一及第二組合子件係由包含預先脫膠及預先燒結的製程所形成。
在此將該些原始申請專利範圍內容一併整合參考成為一或更多示範實施例中之總結特性。
1‧‧‧吸盤設備
2‧‧‧製程容器
3‧‧‧微電子半導體積體電路晶圓
4‧‧‧通道
5‧‧‧內部腔室
6‧‧‧碟狀晶圓熱控制面板
7‧‧‧頂部表面
8‧‧‧底部表面
9‧‧‧圓柱形支撐基座
10‧‧‧氣體進入或排出
11‧‧‧末端
12‧‧‧關緊
13‧‧‧外面
16‧‧‧電源線
17‧‧‧信號線
18‧‧‧接地保護線
19‧‧‧共平面方位
20‧‧‧軸
21‧‧‧同軸方位
22‧‧‧生帶層
24‧‧‧頂部幾層
25‧‧‧底部幾層
26‧‧‧面板組合子件
27‧‧‧電阻溫度偵測器感應器導線
28、31、35、43、44‧‧‧層
29‧‧‧基座組合子件
30‧‧‧加熱構件導線
32‧‧‧電磁輻射保護結構
33‧‧‧中間層
34、36、45‧‧‧電性互連導線
37、46‧‧‧保護導線
41‧‧‧外部幾層
42‧‧‧內層
50‧‧‧虛線
51‧‧‧導電接觸墊片
52‧‧‧導電接觸墊片
61‧‧‧導電結合膏料
62‧‧‧非導電陶磁焊接膏料
63‧‧‧附加泡沫
66‧‧‧加熱導線
67‧‧‧電阻溫度偵測器感應器導線
71‧‧‧加熱器構件電源供應器導線
72‧‧‧電阻溫度偵測器信號線導線
80‧‧‧製造方法
81-85‧‧‧步驟
90‧‧‧預先定形件
91‧‧‧生帶層
92‧‧‧金屬化部分
93‧‧‧黏結劑材料插入件
94‧‧‧燒結本體
95‧‧‧實際上單體陶磁
96‧‧‧金屬化線
97‧‧‧開放式導管
101‧‧‧晶圓吸盤面板
102‧‧‧底部表面
103‧‧‧底層
104‧‧‧鎢層
105‧‧‧生帶層
106‧‧‧加熱器構件導線金屬化
109‧‧‧鎢方塊
111‧‧‧頂部表面
112‧‧‧底部表面
113‧‧‧通道
115‧‧‧散熱器結構
A、B、C、D‧‧‧區域
A’、B’、C’、D’‧‧‧區域
第1圖係根據本發明一示範實施例的晶圓製造容器的略圖。
第2圖係該吸盤的面板及基座組合子件的透視略圖。
第3圖係該些組合子件的分層方位的透視略圖。
第4圖係該些面板及基座組合子件的部分剖面側視略圖。
第5圖係與加入陶磁的結合膏材配接的成果的部分剖面側視略圖。
第6圖係顯示實際上正交定向的加熱器及電阻溫度偵測器導線的面板的部分斷面透視略圖。
第7圖係顯示實際上正交定向的加熱器電源供應器及電阻溫度偵測器 互連導線的未包裹層的側視略圖。
第8圖係根據本發明一示範實施例的吸盤製程的流程圖。
第9圖係包含只填充黏結劑的通孔的未燒結組合子件的部分剖面側視略圖。
第10圖係第9圖中的蒸鍍黏結劑留下一流體通道的燒結組合子件的部分剖面側視略圖。
第11圖係具有銅焊至一鎢冷卻通道傳輸方塊的鎢金屬化底部表面的燒結組合子件銅焊至一銅散熱器的部分剖面側視略圖。
一種晶圓吸盤主要係由例如氮化鋁(“AIN”)陶磁的抗腐蝕性陶磁材料所製造而成並具有複數個金屬化加熱構件導線、所謂“電阻溫度偵測器”(RTD)導線形式的熱感應器、電子信號傳輸及電源互連導線和通孔、以及使用鎢的接地保護導線和通孔。該吸盤係使用一分叉多層的高溫共燒陶磁製程來製造，該製程包含之步驟有製帶、沖片、遮蔽、金屬化、堆疊、壓層、脫膠、及組合子件的第一燒結。該些組合子件係使用金屬化導電黏結膏料，以它們的界面區段來配接在該界面電子接觸墊片上，並將一加入陶磁微粒的陶磁焊接膏料施用於陶磁界面區段，之後再脫膠和再燒結。
現在參考至第1圖，顯示有一改善的吸盤設備1，使用於一製程容器2內，以在製造一微電子半導體積體電路3中使用來清潔、蝕刻及沉積材料。該容器2的內部腔室5可承受透過一或更多通道及/或透過該吸盤的中空基座進入或排出10氣體的各種環境。
該吸盤1包含一實際上碟狀的晶圓熱控制面板6，具有一實際上平面型頂部表面7以在它被關緊12在該容器內時提供與該晶圓底部表面8極度的接近。該面板係安裝於穿透該腔室牆壁的實際上圓柱形支撐基底9的近端上。該基座末端11延伸至該容器腔室2之外。
該支撐基座9包含用於將電子組件電性互連在該面板6上的實際上圓柱形本體15。尤其，電源線16提供電源至該面板內的複數個加熱構件。信號線17傳輸來自位在該面板上的的複數個電阻溫度偵測器熱感應器的電子信號。接地保護線18連接至該面板上所承載的電性保護層。
該面板6的頂部表面7可在該晶圓被關緊於其上時，細分成對應至該晶圓上的區域A’、B’、C’、D’的互斥性區域A、B、C、D。該些吸盤區域可承載獨立的專屬加熱構件及熱感應器子組和它們的電性互連導線，使得該些相對應晶圓區域中每一個的溫度個別受到控制。應了解到儘管是顯示同心區域，然而根據製造需求，其它區域佈局係可行的。
現在參考至第2-4圖，該晶圓吸盤可使用涉及由一配接步驟所分隔的二燒結步驟的分叉多層陶磁製程。該製程的第一燒結步驟產生一對實際上粗糙氮化鋁組合子件，即會變成該吸盤的面板6的面板組合子件26和會變成該吸盤的基座9的基座組合子件29。該氮化鋁組合子件係使用例如鑄造該生帶所用漿料的加入氮化鋁的陶磁焊接膏料來結合在一起，其在該些組合子件和膏料係共燒於一第二燒結步驟中以形成用於最後機器裁製與組合而準備的吸盤時，充當一陶磁焊料結合結構。
該面板組合子件26係相對於軸20對著以一實際上共平面方位19定向的實際上平面的碟狀生帶層22進行軸向堆疊而成。例如該頂部幾 層24和底部幾層25的一些層可保留未金屬化並充當該已完成吸盤的保護陶磁層。其它層可被遮蔽並金屬化以形成包含電阻溫度偵測器感應器導線27、電性互連導線36及保護導線37的一或更多層35。一或更多層28可被金屬化以主要地包含加熱構件導線30和互連及保護導線。一或更多層31可被金屬化以主要地包含電磁輻射保護結構32和互連導線。中間層33可被金屬化以傳輸一些電性互連導線34。因此，該複數個導線可遍佈於該面板各處以提供對複數個既定區域的熱控制。
該基座組合子件29係藉由包裹彎曲生帶層22成為實際上圓柱形而成，其中，該些層係相對於軸20定向於一實際上同軸方位21上。在放平時，該些層實際上係長方形。該些連續層的尺寸可被選擇以容納該些同心圓層中輕微不同的直徑。進一步，輕微變化可被使用來填充層間的微小間隙和孔穴以對壓層期間的生帶輕微變形負責。
例如外部幾層41和內層42的一些層可保留未金屬化並充當該已完成吸盤的保護陶磁層。其它層可被遮蔽並金屬化以形成包含電性互連導線45及保護導線46的一或更多層43、44。因此，該複數個導線可分佈於該基座內以提供對包含複數個各別線路的面板的電性連接。
該燒結面板組合子件的底部表面中心被塑形、裁製尺寸及定向，使得它可沿著虛線50所示的結合區域來親密地連結一相稱外形、尺寸和方位的燒結基座組合子件頂部側。在該結合區域內的面板底部表面具有一導電接觸墊片51群組，在該面板上的電子裝置可透過該群組進行通訊。該基座頂部表面具有相對應導電接觸墊片52的數量或群組，被定位並定向以在將該些組件結合在一起時，接觸該面板上的該墊片群組。了解到形成 於該基座頂部邊緣上的單一接觸墊片可由所示一或更多鄰層的金屬化部分所製造而成。
現在參考至第5圖，該導電結合膏料61的貼片係施用至該基座組合子件29的接觸墊片51。替代性地或除此之外，貼片還可放在該面板組合子件的露出墊片上。一些非導電陶磁焊接膏料62係塗在環繞著該些墊片四周的接觸表面剩餘部分上。將該些傳導性墊片與該已完成吸盤的外表面所曝露的惡劣環境隔離係重要的。陶磁焊接膏料的附加泡沫63可被施用至該結合區域的露出邊緣以對該些最後結合組合子件提供進一步的加強性支撐。
該面板組合子件及該基座組合子件29係沿著該結合區域配接在一起。注意到示於該基座和面板間的間隙係基於清晰起見而被誇大。該些界面表面的容限被選擇以在再燒結該些配接組合子件之後，提供一強壯且實際上單體的焊接結合。
進一步，了解到該面板組合子件係一第一組件，包含定向於第一方位，即平面的複數層，且該基座係一第二組件，包含定向於第二方位，即圓柱的複數層，其係不同於該第一方位。不同方位也可包含圓柱以外的外形及類似外形層，也就是，兩組件雖然具有一平面外形但卻具有一不同方位，例如，第一平面係水平的而另一平面相對於該第一平面具有一非零夾度，例如，第二平面係垂直於該第一平面。
該二組件也沿著包含該些組件間的一或更多導電接觸的結合區域而結合在一起。
現在參考至第6圖和第7圖，為了進一步減少發生於該些信 號線上的電磁干擾，該些加熱導線及電子互連信號導線彼此間可以實際上正交的傾斜方位來運轉，用以減少磁感應雜訊。在第6圖中，顯示有加熱導線66如何以同心圓方式的具角度性地運轉，同時，電阻溫度偵測器感應器導線67如何在該面板組合子件26上以角度性隔離方式的徑向性地運轉的範例。類似地，如它在第7圖中所示的未包裹狀態，該基座29可具有以彎曲線性隔離方式來運轉的加熱構件電源供應器導線72，同時，電阻溫度偵測器信號線導線72可以彎曲圓狀的軸向隔離來運轉。
現在參考至第8圖，顯示有一製造方法80，其中，主要由例如氮化鋁(“AIN”)的抗腐蝕性陶磁材料所製造的部分分別製造的多層陶磁組件係在最後燒結期間使用加入例如氮化鋁的相同抗腐蝕性陶磁材料微粒的焊接膏料來結合在一起。電通訊可使用加入金屬微粒的導電結合膏料，透過該結合區域而產生。
至少二組件組合子件係使用多層陶磁技術來產生81。該些組合子件中的每一個具有用以沿著一結合區域來界面彼此而塑形並裁製尺寸的表面區段。該些區段中的每一個包含一電性接觸墊片，被定向、塑形、裁製尺寸並定位以在該些組件結合在一起時，界面另一區段上的一相對應接觸墊片。
一導電膏料係由一例如鎢的導電性高熔點金屬和一黏結劑的微粒所形成。該導電膏料係充當一局部化貼片中的漿料方式來施用82至一或兩者或該些組件上的每一個接觸墊片。
一非導電焊接膏料係由類似於該些組件帶中所使用的那些陶磁微粒所形成。例如，若氮化鋁微粒被使用以形成該些組件各層中所使 用的生帶，接著，氮化鋁微粒可被使用於該陶磁焊接膏料中。事實上，已發現到該未乾燥的可製帶漿料可充當該陶磁焊接膏料來使用。該陶磁焊接膏料被施用83至一或兩者或該些組件上的結合區域的露出表面區域上。小心配置該陶磁焊接膏料以阻止金屬化部分曝露至欲承受惡劣環境的吸盤外部表面。
該些組合子件組件係在該結合區域處實質對準地界面它們的接觸墊片而配接在一起84。
在意欲使該些膏料內的黏結劑汽化掉的第一黏結劑燒光加熱步驟及接下來在產生準備用於形成該晶圓吸盤的最後製程的結合共燒設備的燒結步驟的共燒製程時，該些組合子件組件被結合在一起。
已觀察到一實際上單體的陶磁結構係形成該些組合子件及焊接材料之間且包含該些組合子件及焊接材料。換言之，該導電膏料構成該些組合子件的相對應接觸墊片間的單一單體連接，且該陶磁焊接膏料構成橋接該些組合子件的單體陶磁材料。事實上，在500倍的放大倍數下，若在該焊接所橫跨的組件組合子件間有任何顆粒邊界，也是很少會被看見。因此，包含該面板及基座的晶圓吸盤的陶磁部分可以說實際上係單體的。
如第9圖所示地，生帶層91可被印刷或衝壓並內嵌著金屬化部分92，衝壓並內嵌著黏結劑材料插入件93，以及堆疊並壓層以形成一預先定形件90。
如第10圖所示地，在脫膠並燒結後，由實際上單體陶磁95所製成的燒結本體94可具有金屬化線96及開放式導管97以傳輸例如冷卻 劑的流體流動。兩面板及基座可被形成以具有可容納一碟狀結構的導管。
範例1
一晶圓吸盤係包含下列製程步驟而形成。
該面板及基座組合子件係根據一部分多層陶磁製程而形成。該生片使用內含具有最大尺寸介於約1.5至2.0微米之間的約77至約80重量百分比(“w%”)的氮化鋁(AIN)陶磁粉粒、具有最大尺寸介於約1.5至2.0微米之間的約4至約6重量百分比的氧化釔微粒以充當一燒結輔助劑、以及敷用並乾燥約15至18百分比的有機黏結劑。在兩組合子件上的金屬化係鎢。
該非導電陶磁焊接膏料係以類似方式來形成。
該導電膏料係藉由混合具有最大尺寸介於約2.0至3.0微米之間的約75至約85重量百分比(“w%”)的鎢粉粒以及類似黏結劑和燒結輔助劑。儘管許多黏結劑配方係適用的，但該較佳配方係自美國亞利桑那州坦佩市的校正與量測實驗室取得。
該導電膏料貼片被施用至該基座的接觸墊片。一些非導電膏料係塗在環繞該些墊片四周的接觸表面的剩餘部分上。
該些組合子件被配接在一起。
該些配接組合子件被置放於一黏結劑燒光烤箱中且該溫度慢慢地跳躍至約400攝氏度。接著，約在室溫下將該脫膠的配接組合子件置放於充滿氮氫空氣的燒結烤箱中並處於約1825攝氏度中約60至120分鐘。
接著可將該燒結產品冷卻至室溫。
冷卻後，相較於一完美固態結構約3.3克/立方公分的特定重力，該燒結吸盤展現一約3.3克/立方公分的特定重力。
在根據本範例所製吸盤的1000倍放大倍數下的觀察顯示顆粒界面的一致性同質。
因為氮化鋁展現出約170瓦/米-絕對溫度的較高熱傳導率，超過約20瓦/米-絕對溫度的氧化鋁熱傳導率，故氮化鋁可遍及該吸盤面板各處提供較佳溫度均勻性。
在本方式中，該吸盤的電性終止可發生於該導管末端處，遠離該面板及該基座近端的惡劣環境。因此，可使用較便宜、更可靠、較不粗糙的電性連接器至該吸盤。
在本方式中，已發現到該基座可被製造以容納足夠線而能夠控制高達該面板上的六個獨立的熱可控制區域。
在本方式中，該些保護層可被製成一法拉第籠型電磁輻射保護結構。這類結構難以使用習知吸盤設計技術來製造。
在本方式中，該吸盤可配合未來、較大或不同外形晶圓來量身製造並藉由產生包含更多感測器與提供更多互連線的更多區域以對面板上的熱區域提供更精細的控制。
現在參考至第11圖，顯示有用以提供該吸盤較大冷卻控制的另一晶圓吸盤實施例。該晶圓吸盤面板101的一部分係使用一多層陶磁製程形成出包含氮化鋁陶磁微粒的生帶層105。該些層可包含用於加熱器構件導線、電阻溫度偵測器導線、互連導線和通孔、及保護導線和通孔的金屬化106。
在本實施例中，該面板底部層103的底部表面102已全部印刷著一鎢層104。
一獨立鎢方塊109係透過機器裁製而成以在燒結後具有與該面板底部層103相稱的頂部表面111。該方塊具有形成於其中的複數個通道113，其被塑形並裁製尺寸以傳輸一冷卻流體於其中。
在該面板已燒結後，可使用矽化銅或金錫銅焊法來銅焊它至該鎢方塊的頂部表面111。
選擇性地，銅製的散熱器結構115可被銅焊至該鎢方塊的底部表面112。在本方式中，該銅散熱器及該氮化鋁陶磁面板間的熱膨脹不匹配可由更具彈性的鎢方塊所容納。
儘管本發明較佳實施例已被描述，然而可進行修改並想出其它實施例而不偏離本發明精神及所附申請專利範圍的範圍。

Claims (20)

  1. 一種多層共燒陶磁設備，包括：第一多層陶磁組件，具有第一電子導線組；第二多層陶磁組件，具有第二電子導線組；該第一組件包含定向於第一方位的複數層；該第二組件包含定向於不同於該第一方位的第二方位的複數層；及其中，該第一及第二組件係沿著包含在該些組件間的導電接觸的結合區域來結合在一起，以及該第一電子導線組和該第二電子導線組在該第一組件和該第二組件的該複數層之間延伸並且經由該結合區域的該導電接觸來電性連接。
  2. 如申請專利範圍第1項之設備，其中：該第一組件具有與該第一導線組進行電性連通的第一複數個導電接觸墊片群組；該第二組件具有與該第二導線組進行電性連通的第二複數個導電接觸墊片群組；及當該些組件被結合在一起時，該第一群組被定位並定向以導電性地接觸該第二群組。
  3. 如申請專利範圍第2項之設備，其中，該第一方位實際上係平面的。
  4. 如申請專利範圍第3項之設備，其中，該第二方位實際上係同心圓柱的。
  5. 如申請專利範圍第4項之設備，其中：該第一方位實際上係垂直於該第二方位。
  6. 如申請專利範圍第2項之設備，其進一步包括：該第一組件包括定位於該區域的第一表面區段；該第二組件包括定位於該區域的第二表面區段；及接觸該些區段的實際上陶磁性焊接結構；其中，該些表面區段和該陶磁性焊接結構中的每一個包括內含氮化鋁的材料。
  7. 如申請專利範圍第6項之設備，其中，該陶磁性焊接結構在該些區段之間形成單體陶磁焊接件。
  8. 如申請專利範圍第6項之設備，其中，該材料包括內含氧化釔的燒結輔助劑。
  9. 如申請專利範圍第2項之設備，其中，該些導線及墊片包括鎢。
  10. 如申請專利範圍第2項之設備，其中，該設備係進一步用於充當電性控制晶圓吸盤來操作。
  11. 如申請專利範圍第10項之設備，其中，該些導線中的第一子組充當加熱構件；該些導線中的第二子組充當連接至熱感應器的電性互連；及該些導線中的第三子組充當電性保護。
  12. 如申請專利範圍第11項之設備，其中，該吸盤包括：頂部表面區域；其中，該區域係細分為複數個互斥性區域；其中，該第一子組包括對應於該些區域來定位的各別導線群組。
  13. 如申請專利範圍第11項之設備，其中，該些導線的該些子組中的 每一個係定位在該第一組件的獨立區域上。
  14. 如申請專利範圍第2項之設備，其中，該第一組件具有延伸過用以傳輸冷卻流體的複數相鄰層的至少一導管。
  15. 如申請專利範圍第1項之設備，其進一步包括：該第一組件具有外部鎢層；鎢方塊，被塑形以具有流動穿越其中的冷卻流體傳輸通道；及該方塊被銅焊至該外部層。
  16. 如申請專利範圍第15項之設備，其進一步包括：散熱器，銅焊至與該第一組件分開的該方塊。
  17. 如申請專利範圍第16項之設備，其中，該散熱器包括銅。
  18. 一種電性連通地結合第一多層陶磁組件至第二多層陶磁組件的方法，該方法包括：形成具有第一導電墊片群組的第一多層陶磁組合子件；形成具有第二導電墊片群組的第二多層陶磁組合子件；該第一組合子件包含定向於第一方位的複數層；該第二組合子件包含以不同於該第一方位的第二方位定向的複數層；在該第一群組上形成內含導電微粒的第一漿料貼片；圍繞著該第一群組四周施用內含陶磁微粒的第二漿料貼片；沿著包含在該第一和第二群組之間的導電接觸的結合區域來配接該第一和第二組合子件；及透過該第二貼片的燒結結果所形成的陶磁焊接，以結合該第一組合子件至該第二組合子件的溫度來燒結該些組合子件， 其中該第一導電墊片群組和該第二導電墊片群組在該第一組合子件和該第二組合子件的該複數層之間延伸並且經由該結合區域的該導電接觸來電性連接。
  19. 如申請專利範圍第18項之方法，其進一步包括在未乾燥狀態中脫膠並燒結該漿料。
  20. 如申請專利範圍第18項之方法，其中該第一及第二組合子件係由包含預先脫膠及預先燒結的製程所形成。
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