TW200807560A - Substrate processing with rapid temperature gradient control - Google Patents

Abstract

A substrate processing chamber comprises an electrostatic chuck comprising a ceramic puck having a substrate receiving surface and an opposing backside surface. In one version, the ceramic puck comprises a thickness of less than 7 mm. An electrode is embedded in the ceramic puck to generate an electrostatic force to hold a substrate, and heater coils in the ceramic puck allow independent control of temperatures at different heating zones of the puck. A chiller provides coolant to coolant channels in a base below the ceramic puck. A controller comprises temperature control instruction sets which set the coolant temperature in the chiller in relation prior to ramping up or down of the power levels applied to the heater.

Description

200807560 IX. INSTRUCTIONS OF THE INVENTION: TECHNICAL FIELD OF THE INVENTION Embodiments of the present invention relate to treating a substrate with rapid gradient control over the entire substrate. [Prior Art] In the process of processing a substrate such as a semiconductor and a display, an electro-sucking holder is used to fix a substrate in a chamber to treat a layer on the substrate. - Commonly used electrostatic chucks include electrodes covered with ceramic. When the counter electrode is charged, the electrostatic discharge street I is collected in the electrode and the substrate, and thereby electric power is applied to fix the substrate to the suction holder. Generally, the heat transfer rate across a small gap at the interface between the back side of the substrate and the suction surface is promoted by controlling the substrate temperature by holding helium gas over the substrate. The electrostatic suction base is supported by a base having a passage for liquid to flow therethrough to heat the suction seat. Once the substrate is firmly secured to the holder, gas is introduced into the chamber and a plasma is formed to treat the substrate. The substrate can be processed by φ CVD, PVD, etching, implantation, oxidation, nitridation or the like. ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ 'In this conventional substrate process' The process will be maintained at a single temperature during processing. Typically, the wafer is passed through a slit in the chamber and placed on a lift pin that extends through the body of the electrostatic chuck. Then, the lift pins are retracted from the suction cup, and the substrate is placed on the surface of the suction seat. The temperature of the substrate rises rapidly to 'degrees, and then the heater in the suction cup or the pre-speed warming in the chamber forms a static seat retention table that can be made by other materials. The base system will be set to maintain the temperature by maintaining the temperature slurry 5 200807560. The temperature of the substrate can be further controlled by controlling the temperature and flow rate of the coolant flowing through the base passage and the suction seat, wherein the coolant is used to remove heat from the suction seat. While conventional process chambers are suitable for maintaining a stable single temperature during processing, such process chambers do not allow the substrate temperature to change rapidly over a process cycle. In some processes, it is necessary to make the substrate temperature rise or fall rapidly to obtain a specific temperature distribution during the process; for example, in different stages of the remnant process, the substrate temperature needs to be rapidly changed to different temperatures. Etching different materials on the substrate. In these various etching stages, the process gases supplied to the chamber may also differ in composition from the same composition. In another embodiment, in the remnant process, the degree distribution facilitates deposition of the sidewall polymer on the wall of the feature etched on the substrate and is used in the same etching process. The temperature of the process is etched to remove sidewall polymer, or vice versa. In the deposition process, for example, in order to deposit a nucleating layer on a substrate first, and then to grow a heat-treated layer on the substrate, it may be necessary to make the first process temperature higher or lower than the second system. degree. Conventional substrate processing chambers and their internal structures are often unable to adequately increase or decrease the temperature of the substrate. During the manufacturing process, when the substrate is in a non-uniform process condition in its radial direction, another complication occurs, which can result in a non-uniform co-center processing band. Such uneven process conditions can be caused by the distribution of gas or plasma species in the chamber which is typically varied based on the location of the inlet and outlet ports in the chamber. It is also possible to change the rate of diffusion and arrival of gaseous species in different regions of the substrate surface by the homogenization of the homonuclear temperature in the single or temperature side. Non-uniform thermal loading in the chamber can also cause non-uniform processing, for example, non-uniform thermal loading due to non-uniform energy coupling from the plasma sheath to the substrate or from the chamber walls. It is undesirable to have processing strips or other processing differences found on the substrate as this would result in electronic components fabricated in different regions of the substrate (e.g., perimeter and central substrate regions) having different characteristics. Therefore, it is desirable to be able to reduce variations in processing rates and other process characteristics on the surface of the substrate during processing of the substrate. Accordingly, it is desirable to have a process chamber and chamber component that allows the temperature of the substrate to be processed in the cavity to rise and fall rapidly. Moreover, it is also desirable to control the temperature of different regions of the treated surface of the substrate to reduce the effects of uneven processing conditions on the surface of the substrate. In addition, it is also desirable to control the temperature distribution of the substrate during the process. SUMMARY OF THE INVENTION It is an object of the present invention to provide a process chamber and chamber component that can be subjected to rapid temperature control of different regions of a substrate to be processed, which substantially solves one of the disadvantages of the prior art or Multiple questions. According to an aspect of the present invention, there is provided a substrate support assembly capable of receiving and heating a substrate in a process chamber, the assembly comprising: (a) a substrate receiving surface and a ceramic disk opposite the back surface, The ceramic disc package (1) dares to be placed in the electrode of the ceramic disc to generate an electrostatic force to fix the substrate placed on the substrate receiving surface, and (π) is embedded in the ceramic disc. a heater that heats the substrate; (b) a coolant base that includes a coolant passage in which the coolant circulates, and the passage includes an inlet and a terminal; and (c) a buffer layer that bonds the ceramic disk to the coolant The base, and the buffer layer comprises (i) at least one of bismuth having the aluminum fibers to be provided, or (?) acrylic having an embedded wire mesh.

According to another aspect of the present invention, there is provided an electrostatic chuck capable of receiving and heating a substrate in a process chamber, comprising: (a) a ceramic disk including a substrate receiving surface and an opposite back surface, rain The ceramic disk includes a thickness of less than about 7 mm; (b) an electrode embedded in the ceramic disk for generating an electrostatic force to fix the substrate placed on the substrate receiving surface, and (c) intended to be placed on the ceramic A heater in the disc to heat the substrate that is carried on the substrate receiving surface. According to another aspect of the present invention, the present invention provides a buffer layer (c 〇m ρ 1 i an t 1 ayer ) for bonding a ceramic disk including an electrode and a force sigma heater to a coolant base, and The coolant base includes a coolant passage through which the coolant circulates, the buffer layer comprising at least one of: (a) a crucible having an embedded fiber, or (b) an acrylic having an embedded wire mesh . According to another aspect of the present invention, there is provided a substrate processing apparatus comprising: (a) a process chamber including a substrate support mounted therein, and the substrate support comprises: (i) a ceramic disc having an electrode and a heater; (ii) a base below the ceramic disc, the base including a plurality of coolant passages; and (iii) one for maintaining a coolant at 8 200807560

a cooler at a predetermined temperature, a coolant providing a coolant passage to the base; (b) a gas distributor for supplying a process gas to the process chamber; (c) a gas energizer Exciting process gas; (d) an exhaust port for exhausting process gas from the process chamber through the exhaust port; and (e) a controller including a plurality of temperature control instruction sets (instructi ο nset ), the instruction set A plurality of code codes are included for: (i) raising a coolant temperature in the cooler to a higher level before increasing the power level applied to the heater in the ceramic disk, or (ii) The coolant temperature in the cooler is lowered to a lower level before the power level applied to the heater in the ceramic disk is lowered, so that the temperature of the substrate can be increased or decreased at a faster rate. Therefore, the present invention can independently control the temperature of different heating zones in the ceramic disk on the electrostatic chuck, thereby achieving rapid temperature control of different substrate regions. - One of the embodiments of the present invention will be described in detail below with reference to the accompanying drawings. Other objects, features, aspects and advantages of the present invention will become apparent from the description and appended claims [Embodiment] Fig. 1 is a schematic view showing an exemplary scheme capable of etching a chamber 106 of a substrate 25. The chamber 106 is represented by a Decoupled Plasma Source (DPSTM) chamber, which is the chamber for the induction of the plasma remnant chamber 200807560 supplied by Applied Materials Inc. of Santa Clara, California. The D P S chamber 10 6 can be used in C E N T U R A ® I n t e g r a t e d Processing System (Applied Processing Inc.), supplied by Applied Materials Inc. of Santa Clara, California. Other rain chambers can also be used in conjunction with the present invention, including, for example, capacitively coupled parallel plate chambers, electromagnetically enhanced ion etching chambers, inductively coupled plasma etching chambers having different designs, and deposition chambers. room. Although the apparatus and process of the present invention are advantageously used in a DPS chamber, the chamber is only used

The invention is described and not to be construed as limiting the scope of the invention. Referring to Figure 1, a typical chamber 106 includes a housing 114 formed by a perimeter wall 1 18 that includes a sidewall 128, a bottom wall 122 and a top wall 13A. The top wall 13A can include a flat shape as shown, or for example, U.S. Patent No. 7,074,723, to Chinn et al., and entitled "Using a Plasma Source Gas Regulating Etch System and I Paid Depth Depression" Meth〇d of Plasma Etching a Deeply Recessed feature in a Substrate Using a Plasma

The shape of the dome having a multi-radius arch shape as described in the Invention of the Source Gas Modulated Etchant System, the entire contents of which is hereby incorporated by reference. The wall 11S is typically made of a metal or ceramic material such as aluminum. Top wall 130 and/or side walls 128 1 2 6 ' are processes that allow radiation to pass through the chamber. The plasma is formed in a process zone defined by the process chamber 130. A lightly transmissive window monitor can also be performed in the chamber 106, the substrate support and the surface of the dome wall substrate 25, supported in the chamber 106 and on the substrate support. The substrate support member includes the electrostatic suction seat 20, and the suction seat 2 is 10

200807560 is set on the base 91. As the first! As shown in FIG. 2 and FIG. 2, the static includes a ceramic pUck 24 having a substrate receiving surface 26 as a top surface of the disk 24 and for receiving the ceramic disk 24 also having a substrate receiving surface 26 The ceramic disk 24 has a peripheral projection 29 having a step 3 1 and a second step 33. The ceramic disk 24 includes at least one of alumina, yttria, carbonized dream, tantalum nitride, titanium oxide, zirconia, and the like. The ceramic disk 24 can be made of a single ceramic block by hot pressing and sintering of the ceramic powder, and the post-sintered articles are joined to form the final shape of the suction cup 20. It is believed that the thickness of the ceramic disk 24 substantially affects the ability of the substrate to rise and fall. If the ceramic disk 24 is too thick, it takes a long time for the disk 24 to still cause the temperature to rise rapidly, and the temperature of the upper substrate also requires a correspondingly long time to reach the desired set temperature. In addition, it is also believed that if the ceramic disk is incapable of maintaining the substrate at a steady state temperature during processing, the substrate temperature fluctuates. In addition, the thickness of the ceramic disk 24 also affects the operation of the electrode 36 in the ceramic disk 24. If the thickness of the 24 4 layer of the ceramic disk directly above the 3 6 is too thick, the electrode 36 couples energy to the electricity formed in the finished region. On the other hand, the thickness of the ceramic disk 24 above the electrode 36 is too thin, and the radio frequency (RF) voltage on the application 36 can be discharged to the plasma to cause plasma instability. Therefore, the thickness of the ceramic disk 24 is precisely less than about 7 mm, for example, a thickness of about 4 to about 7 mm; and the ceramic circular substrate 25 is electrically attracted to the holder 20. Back 28. There is a first aluminum nitride, a mixture of the mixture, which is fast at the mechanical temperature to reduce the ceramic σ, because the reachable 24 is too thin, thus causing the ring to be embedded in the embedded electrode is not effective, such as adding to the electrode Arc and cause ground control in one side

In the case of 200807560, the thickness of the ceramic disc was 5 mm. At these thickness levels 24, the substrate temperature is allowed to rise and fall rapidly during the process, and the temperature fluctuates, and the electrode 36 which is substantially not caused by the plasma instability embedded in the ceramic disk 24 is used for production. The substrate is fixedly placed on the substrate receiving surface 26, and the electrical flux formed by capacitively coupling the energy into the chamber 1 〇6 is a conductor such as a metal, and may be formed as a single or bipolar electrode comprising a single conductor, And an electrically biased material attached to the external power supply and associated with the plasma formed over the chamber to apply an electrical bias to the counterfeit substrate secured to the holder 20. There are two or more stacks, wherein the guides are pressed against each other to create an electrostatic force for holding the substrate. Electrode 36 can be a wire mesh or a metal disk having a suitable open area. For example, the electrode 36 of the electrode may be embedded in a continuous metal wire mesh as shown. One of the electrodes 36 including the bipolar electrodes is a pair of embedded C-shaped discs that span the C-pair. The electrode 36 may be made of I, copper, iron, molybdenum, niobium or tungsten. One version of electrode 36 includes a molybdenum mesh. The electrodes 36 | are connected, wherein the terminal 58 will be an electrode 3 3 from an external power source 230, which includes a DC voltage source, and is a FF voltage source. Optionally, a plurality of heat transfer gas conduits 38a, 38b are tumbled 24 and terminate at substrate receiving surfaces 40a, 40b at the suction cup 20 to provide heat transfer gas to the substrate receiving table. Ceramic discs can simultaneously reduce twin electrostatic forces, optionally, ί. Electrode 36 electrode. Unipolar single electrical connection synergy, bipolar electrode with a conductor and biased to form gold'. A single embodiment in a monopolar disk can be straight edged and the opposite side of its alloy group is the terminal 5 8 power supply to Optionally, the transverse surface of the ceramic circle 26 is traversed. In the base 12 200807560

The heat transfer gas (which may be, for example, helium) is provided below the back side 34 of the material to conduct heat from the upper substrate 25 to the receiving surface 26 of the ceramic disk 24. For example, the first gas conduit 38a is configured to provide a heat transfer gas to the central heating zone 42a of the substrate receiving surface 26, and the second gas conduit 38b is configured to provide a heat transfer gas to the peripheral heating zone of the substrate receiving surface 26. 42b. The center of the substrate receiving surface 26 of the Tauman disk 24 and the peripheral heating zones 42a, 42b maintain respective portions of the substrate surface 44 (e.g., the center and peripheral portions 46a, 46b above the substrate 25) at different temperatures. In order to compensate for the uneven concentric processing belt, the concentric processing belt is caused by a corresponding uneven belt having different process conditions on the substrate 25. The ceramic disk 24 also has an embedded heater to heat the substrate 25. The heater includes a plurality of heater coils 50, 52, which are disposed in the ceramic disk 24, for example, a first heater coil 50 and a second heater coil 52. The center of the substrate receiving surface 26 of the ceramic disk 24 and the temperature at the peripheral heating zones 42a, 42b can be controlled using heater coils 50, 52 that are concentric and radially spaced from one another. In one version, the first heater coil 50 is located at the peripheral portion 54b of the ceramic disk 24, and the second heater coil 52 is located at the central portion 504 of the ceramic disk 24. The first and second heater coils 50, 52 allow for independent control of the temperature of the center and peripheral portions 5 4a, 54b of the ceramic disk 24, thereby providing the ability to independently control the temperature of the heating zones 42a, 42b. To achieve different processing rates or characteristics along the radial direction of the processing surface 44 of the substrate 25. Therefore, different temperatures can be maintained in the two heating zones 42a, 42b to affect the temperature of the center and peripheral portions 46a, 46b of the upper substrate 25, thereby resisting the treatment of the substrate 25 13 200807560

Any change in gas species distribution or heat load that occurs during the process. For example, when the activity of the gas at the peripheral portion 46b of the treatment surface 44 of the substrate 25 is lower than the gas at the central portion 46b, the temperature of the peripheral heating zone 42b rises to a higher temperature than the central heating zone 42a, thereby A more uniform processing rate or processing characteristics is provided on the treated surface 44 of the substrate 25. Figure 8 shows the relationship between the change in substrate temperature and the percentage of heater power provided by the internal and external heating wires embedded in the holder 20. In one version, the first and second heater coils 50, 52 each comprise a coil of resistance heating elements arranged side by side, and which may even be substantially in the same plane. For example, the heater coils 50, 52 are a continuous concentric coil loop that is progressively wound radially inwardly in the body of the ceramic disk 24. In an embodiment, the heater includes a coil and has a first coil ring disposed at a first distance interval and a second coil ring disposed at a second distance greater than the first long distance. The second coil ring is disposed around the lift pin hole in the ceramic disk. The heater coils 50, 52 may also be wound coils wound along an axis passing through the center of the wire, for example, a filament, which is disposed in a concentric circle of the interior space of the ceramic disk 24. The resistive heating element may be composed of a different resistive material such as tungsten or molybdenum. The heater coils 50, 52 have a selected resistance and operating power level to increase the rate at which the substrate 25 rapidly rises and falls. In one version, the heater coils 50, 52 both include a sufficiently high resistance to cause the substrate receiving surface 26 of the ceramic disk 24 to rapidly rise to and squeezing at a temperature of from about 80 to about 25 0 QC. In this scheme, the resistance of the coil is from about 4 to about 12 Ohm 14 200807560 (ohms). In one embodiment, the resistance of the first heater coil 50 is 6.5 Ohm, and the internal resistance of the second heater coil 52 is 8.5 Ohm. In other embodiments, the first and second heater coils comprise a total resistance of less than 10 Ohm. In one embodiment, the heater includes a resistance of 8.5 Ohm. The heater coils 50, 52 are powered by separate posts 58 8 a-d extending through the ceramic disk 24.

In combination with the heater coils 50, 52, the pressure of the heat transfer gas can also be controlled in the two heating zones 42a, 42b to provide a more uniform substrate processing rate on the substrate 25. For example, two heating zones 42a, 42b can be set to accommodate the heat transfer gases at different equilibrium pressures to provide different heat transfer rates from the backside 34 of the substrate 25. This can be accomplished by providing heat transfer gases of different gas pressures through two gas conduits 38a, 38b, respectively, to exit at two different locations on the substrate receiving surface 26. The back side 28 of the ceramic disk 24 can have a plurality of spaced mesas 30 (mesa) as shown in FIG. In one embodiment, the mesas 30 are cylindrical protrusions that are separated from one another by a plurality of gaps 32. In use, the gap 32 is filled with a gas such as air to regulate the rate of heat transfer from the back surface 28 to the surface of the base below. In one embodiment, the table top 30 includes a cylindrical projection extending upwardly from the back face 28, which may even be shaped as a post having a rectangular or circular cross-sectional shape. The height of the mesas 30 can be from about 10 to about 50 microns, and the diameter of the mesas 30 can range from about 500 to about 5000 microns. However, the mesas 30 can also have other shapes and sizes, such as conical or rectangular blocks, or even bumps of different sizes. In one embodiment, the square plate 25 with the appropriate small bead size (for example, several tens of micrometers) and the bead processing 15 200807560 method is used, and the side cap is loosely embossed. 8 to form the mesa 30, and etch away the material of the back surface 28 by using the etching side to form a gap 3 2 formed between them.

The electrostatic chuck 20 can also include optical temperature sensors 60a, b that pass through the holes 62a, b in the ceramic disk 24 to contact and accurately measure the center and peripheral portions of the substrate 25. temperature. The first sensing 60a is located at the central heating zone 42a of the ceramic disk 24 to read the temperature of the substrate central portion 46a, and the second sensor 60b is located at the peripheral heating zone 42b of the ceramic circle 24 to read accordingly The temperature of the peripheral portion 46b of the substrate 25 is taken. The optical temperature sensors 60a, b are located in the suction cup 20 such that the tips 64a, b of the sensors 60a, b and the substrate attachment surface 26 of the ceramic disk 24 lie in the same plane so that the sensor tips 64a, b can The back side 34 of the substrate 25 held on the suction cup 20 is contacted. The struts 66a, b of the sensor 60a extend vertically through the body of the ceramic disk 24. In one embodiment, as shown in FIG. 5, each pseudo optical temperature sensor 60 includes a thermal sensor probe 68 that includes a dome shaped top portion 74 that is shaped to have a wall 72 and a tip end 64. The closed cylinder of copper 7 〇. The copper cap 70 can be composed of an oxygen-free copper material. The phosphorus containing plug 76 is internally disposed and in direct contact with the top portion 74 of the copper cap 70. The phosphorus-containing plug 76 embedded in the cap 70 provides a faster and more sensitive thermal response to the thermal sensing probe 68. The tip end 64 of the copper cap 70 is a dome-shaped top portion 7 4 to allow repeated contact with different substrates 25 without eroding or damaging the substrate 25. The copper cap 70 has a capacity for accommodating the epoxy. A recess 7 8 of the resin 79 is used to secure the copper cap in the sensor probe 68. 16 70 200807560 The scaly plug 7 6 converts the heat of the infrared green & ^ meal form into photons, and the photon passes through the optical fiber bundle 8 n . The optical fiber bundle 80 may be composed of boron borax salt glass fiber enamel. The sleeve a ^ surrounds the optical fiber bundle 80, and the temperature-isolated Qin 84 partially surrounds the sleeve 82, and the sleeves 84 at the cathode and w ^ h are used as both the temperature sensing and the base supporting the ceramic disc. 4 thermal insulation. The sleeve 82 can be a breakage tube to provide better thermal insulation from the surrounding construction, but can also be made of, for example, steel. The isothermal cover 8 4 can be made of PEEK (polyether ether ketone), and can also be made from D u ρ ο nt de N em 〇urs company of 烕 烕 ^ ^ 美国 · · · · ef 聚 聚 聚B, and the composition of ethylene. The electrostatic chuck 20 is secured to the coolant base 91 from the 丄# & 7 explosive support 90, the coolant base 9 &

y 1 is used to support and fix the suction cup 20, and A is the suction seat 20 (Fig. 4A and Fig. 2, Fig. 4β). The base 91 includes a metal body 9 2 having a top surface 94, the top surface 94 having a suction receiving portion 96 and a peripheral portion 98. Top surface 9 * Dip ten? The suction receiving portion 96 of the crucible 4 is for the back surface 28 of the ceramic disc 24 for receiving the electrostatic chuck 20. The peripheral portion 98 of the base 91 extends radially outward beyond the pottery disk 24. The peripheral portion 98 of the base 91 can be used to receive a clamp ring ι 〇〇 that is secured to the top surface 94 of the peripheral portion 98 of the base 91. The metal body 92 of the base 91 has a plurality of passages 1 〇 2, From the lower surface 104 of the base 91 to the top surface 94 of the base 9 1 , for example, for receiving the posts 58 8 a - d or supplying gas to the gas conduits 38a, b of the ceramic disk 24. The base 91 has a coolant passage 1 1 包括 including an inlet 915 and a terminal 197 to circulate the coolant through the passage 1 1 〇. As shown in Fig. 4B, when the cooling passage 1 1 0 is turned toward itself and wraps around as a loop, it can be 17 200807560

The inlet 95 and the terminal 97 of the cooling passage 110 are disposed adjacent to each other. The coolant can be a fluid such as water or other suitable heat transfer fluid that is maintained at a predetermined temperature in the chiller and is pumped through the passage of the base 91. A base 91 with circulating cooling fluid can act as a heat exchanger to control the temperature of the suction cup 20 such that the treated surface 44 of the substrate 25 reaches the desired temperature. The fluid flowing through the channel 110 can be heated or cooled to raise or lower the temperature of the aspiration seat 20 and the temperature of the substrate 25 on the suction pad 20. In one embodiment, the channel 110 is shaped and sized to allow fluid to pass therethrough such that the temperature of the base 91 is about 0 to 120 ° C. The suction receiving portion 96 of the top surface 94 of the base 91 includes one or more recesses 108a, 108b for retaining and flowing air through the back of the ceramic disc 24. In one embodiment, the suction receiving portion 96 includes a peripheral groove 108a that cooperates with a plurality of mesas 30 located on the arm surface 28 of the ceramic disk 24 to control heat from the peripheral portion 54b of the ceramic disk 24. Transfer rate. In another embodiment, the suction receiving surface of the base includes a peripheral groove to retain air around the back surface of the ceramic disk. In another embodiment, the central groove 108b is combined with the peripheral groove 108a to regulate heat transfer from the central portion 54a of the ceramic disk 24. The grooves 108a, 108b in the top surface 94 of the base 91 cooperate with the land 30 on the back side 28 of the ceramic disk 24 to further adjust the temperature on the substrate processing surface 44. The mesas 30 on the back side 28 of the ceramic disk 24 are distributed on the back side 28 in a uniform or non-uniform pattern. The shape, size and spacing of the table top 30 is the total amount of contact surface between the console face 30 and the top surface 94 of the base 9 1 to control the total heat transfer area of the interface. When the table 18

When the 200807560 30 is arranged in a uniform interval pattern, the gaps 3 2 for indicating the mesas 30 are substantially the same, and the gaps 32 are different when the surfaces 28 are disposed at non-uniform intervals. Alternatively, as shown in FIG. 3, the ceramic disk 24 may have a first array 3 9 adjacent to the inlet 9 5 of the coolant passage 11 in the base, and a distance away from the channel 1 1 0 The inlet array 9 5 or the second array 41 of the second array of mesas 30 of the adjacent mesas 30 of the terminal 97 of the coolant passage 110 has a different gap distance than the first array 39, thereby adjusting the phase with the coolant passage 11 0 The rate of heat transfer in the surrounding area. For example, the pottery located above the portion of the coolant passage 110 that receives the fresh passage inlet 915 is typically maintained at a lower temperature than the ceramic disc 24 located above the portion of the cold passage 110 near the end of the passage. This is because as the passage in the cooling base is heated, the heat itself is obtained by obtaining the heat from the ceramic disk 24. Therefore, for the substrate 25 placed on the receiving end of the ceramic disk 24, it has a higher temperature at the region above the cooling channel terminal 97 in the region above the inlet 95. 5 is provided around the first array 3 9 separated by a first gap distance by 30, and a mesa 3 0 array 4 1 spaced apart from the second gap distance of the first gap distance around the channel 1 1 0 terminal 9 7 And compensate for this temperature distribution. When the first distance is two distances, the heat transfer rate from the substrate directly above the first array 39 is lower than the heat transfer rate from the portion directly above the second array 41. Therefore, the distance of heat transfer from the first substrate region is: at the time of the countertop 28 and even with the column 41. The pattern is either away from the coolant disc 24 but the agent passes through and the surface of the surface is 6 &6; The borrowed countertop is supplied with a second greater than the 25th portion of the substrate 25 at a lower rate 19 200807560 from the heat transfer rate from the second substrate region, which causes the first region temperature to become higher than the second region, thereby compensating and balancing A temperature profile will occur at the coolant channel inlet 95 and the substrate surface 44 of the terminal 97. In one embodiment, the first array 39 of mesas 30 are separated by a first distance of at least about 5 mm, while the second array 41 of mesas 30 is separated by a second distance of less than about 3111111.

By varying the size of the contact area of the first array 39 of mesas 30 relative to the size of the contact area of the second array 41 of mesas 30, the same temperature profile control can be obtained. For example, the first dimension of the contact area of the first array 39 of mesas 30 can be less than about 2000. microns, and the contact area of the second array 41 of mesas 30 can be at least about 3000 microns. The first and second dimensions may be the diameter of the mesas 30 comprising a columnar shape. In one embodiment, the first dimension is a diameter of 1 000 microns and the second dimension is a diameter of 4000 microns. The smaller the contact area, the higher the temperature on the substrate treated surface 44. Additionally, air is provided between the table top 30 and the back side 28 to serve as another temperature regulator. Another factor affecting the ability of the substrate to rapidly rise and fall is the nature of the thermal interface between the ceramic disc 24 and the base 91. The preferred system at the interface has better thermal conductivity, thereby allowing the coolant flowing through the base 9 to easily remove heat from the ceramic disk 24. In addition, the interface is preferably bufferable (c 〇 mp 1 iant ) because the high temperature difference between the ceramic disk 24 and the coolant base 9 1 causes thermal expansion stress which will cause cracking or other Thermal stress that causes damage to the ceramic disk 24. In one embodiment, the back side of the ceramic disk 24 is bonded to the front side of the base 91 by means of a buffer layer. Manufacturing 20

200807560 Buffer layer to provide good thermal conductivity while still having a high absorption of high thermal stress. In one embodiment, the crucible of aluminum fiber bundle is included in the buffer layer. The tantalum material has good cushioning power and simultaneous thermal conductivity. The embedded material can be used to create material. In another embodiment, the buffer layer comprises a metal screen acid embedded therein. In addition, the acrylic polymer is selected to accommodate thermal stresses, and the incoming wire mesh improves the thermal conductivity of the structure. The base 91 also includes an electrical connector assembly 120 for conducting power to the electrostatic chuck 2036. Electrical connector assembly 120 includes ceramic 124. The ceramic insulating sleeve 124 can be, for example, alumina. A plurality of wires are not provided in the ceramic insulating sleeve 124. The terminals 58, 58a-b provide an electrode 36 of the electro-suction holder 20 and heater coils 50, 52. For example, 58 may include a copper post. The ring assembly 170 can also be provided to reduce the formation of the article on the peripheral region of the substrate support 90 comprising the electrosump 20 from the base 91 and to protect it from erosion. The ring assembly 170 includes a retaining ring that is secured to the peripheral portion 98 of the top surface 94 of the seat 91 by a securing means such as a screw or bolt (not shown). A lip 1 72 having a retaining ring and extending radially inward, a top surface 1 74 and an outer surface lip 172 have a lower surface 173 disposed on the step 31 of the peripheral projection 29 of the ceramic disk 24 to The ceramic disc 24, the top and outer surfaces 176 form a hermetic seal. In one version, the table below includes a polymer layer 179, for example comprising polyimine, to form a good seal. The fixing ring 100 is made of a material resistant to plasma erosion and embedded with a suitable heat-conducting propylene while the electrode insulating sleeve t 58 is embedded into the static electrode of the static terminal ,100, which is fixed Horizontal & 176, the first side of the 174 face 1 7 3 good gas, such as 21

200807560 Metal materials such as stainless steel, titanium or Ming, or materials such as materials. The ring assembly 170 also includes an edge ring 180 that is disposed on the top surface 174 of the stationary ring 100. The edge ring 180 also has an annular outer wall 186 that surrounds the retaining ring 100, otherwise the outer side surface 176 will be present and thereby reduce or even completely prevent sputter deposits on the 100%. The edge ring 180 also includes a flange 190 that covers the second step 33 of the ceramic disk 248 such that the upper edge 190 of the substrate 25 on the surface of the flanged ceramic disk 24 includes a trailing end at the base The protruding edge of the material 25 is 196 194. The flange 190 defines the inner perimeter of the edge ring 180, and the perimeter of the material 25 to protect areas that are not covered by the base and porcelain discs 24 during processing. The retaining ring 100 of the ring assembly 170 cooperates to reduce process deposits in the process chamber 106 to form a static 1 supported by the base 91 and protect it from erosion. The edge ring 180 protects the side surface of the substrate to reduce the intrusion of the excited state plasma material. It is easily removed to remove deposits from the retaining ring 1 〇〇 and edge 1 80, so it is not necessary to remove the entire substrate name. The edge ring 180 includes a ceramic such as quartz. During operation, the process gas system is conducted into the chamber 106 by gas, and the gas delivery system 150 includes a source gas source 204, each of which is supplied with a gas cylinder having a gas flow control, including 180 The outer side surface of the strip 1 7 6 is exposed to the process ring and is deposited on the peripheral projection 190 of the retaining ring to form a seal with the beak. The projection below the projection is surrounded by the pottery and edge ring 180 covered by the base f 25, on the suction seat 20, "the member 90 exposes the exposed surface of the ring assembly 170, and the member 90 is cleaned. 1 50 and a valve 4 with a gas source 158 (such as 22 200807560

The conduit 203 of the mass flow controller is configured to pass a gas having a set flow rate therethrough. The conduit 203 supplies gas to a mixing manifold (not shown) where the gas system mixes to form the desired process gas composition. The mixing manifold is supplied to the gas distributor 1 62, and the gas distributor 1 62 is provided with a gas outlet in the chamber 106. The gas outlet may terminate at the periphery of the substrate support 20 through the chamber sidewalls 128 or terminate above the substrate 25 through the top wall 130. The used process gases and by-products are discharged from the chamber 16 by an exhaust system 210, which includes one or more exhaust ports 211, which receive the used system. The gas is passed into the exhaust conduit, wherein the exhaust conduit has a throttle valve that controls the pressure in the chamber 106. The exhaust duct is connected to one or more exhaust pumps 2 1 8 . The exhaust system 210 may also contain an effluent treatment system (not shown) to weakly reduce the undesirable presence of gases. The process gas is excited by a gas igniter 208 to process a substrate 25 that couples energy into a process region of the chamber 106 or a process located in a distal region (not shown) upstream of the chamber 106. gas,. By "excited process gas" is meant that the process gas system is activated or excited to form one or more dissociated gaseous species, non-dissociated gaseous species, ionic gaseous species, and neutral gaseous species. In one embodiment, the gas igniter 208 includes an antenna 186 that includes one or more induction coils 18 8 that are circularly symmetrical about the center of the chamber 106. Generally, antenna 186 includes a solenoid having from about 1 to about 20 turns, the spiral having a central axis that conforms to a longitudinal vertical axis extending through process chamber 106. Select a suitable configuration of the solenoid to provide a strong inductive flux connection and coupled to the process 23 200807560 gas top wall of the dielectric * 192 η approximately 60 at: when the antenna 1 8 6 is placed in the adjacent chamber 1 〇 When the top wall 130 of 6

4 匕 aluminum allowable body top temperature concentration range to about

The adjacent portion of the top 106 emission 130 showing the side under the motion 25 can be made of a dielectric material such as a oxidized hair, and the t material can be used to refraction the radio frequency (RF) field or the electromagnetic field. Antenna 186 is powered by a f-stream source (not shown) and traverses the Rp matching network to integrate the applied power. For example, an antenna power motor source provides rf power to a frequency of about 5% KHz to MHz, or more typically 13.56 MHz; and a power level of about 100 to about 5,000 watts. When the antenna 1 8 6 is used in the chamber 1 〇 6, the τ is generated. a, soil 11 8 includes an inductive field permeable material such as oxygen oxidized chopping material _ ^ the top wall 丨 3 衣 of the clothing to penetrate the wall from the inductive energy of the antenna 186! 1 or wall 130. Suitable material is a doped (d o p e d ) cut. In view of the doped 矽 semi-conductive wall, the temperature of the top wall 130 is preferably maintained within a confinement, and within the enclosure, the material has semiconducting properties, and the temperature of the carrier electrons relative to the temperature It is completely constant. For T-doped germanium, the temperature can be from about 100 Κ (below this temperature, splitting 'with dielectric properties) 600 Κ (above this temperature, Shi Xi began to have all the properties of the conductor only In one embodiment, the gas energizer 208 can also be a pair of electrodes (not) that are capacitively coupled to provide an initial energy to the process gas or to an excited gas species. Ground, the / electrode is located in the support member 90 of the Mob, and the other electrode is a wall, a soil door ▲, such as the chamber 1 〇 6 wall 128 or the top wall 130. For example, the electrode can be made of + conductor Forming wall 130, which is sufficiently electrically conductive to bias or technically form an electric field in the chamber while providing an RF induced field from the antenna 1 8 6 located at the top wall 13 〇μ^ Low impedance. Suitable for the body of the road including 24 at room temperature

Doped germanium having a resistivity of less than about 50,000 Ω-cm at 200807560. The bias voltage source (not shown) typically biases the electrode relative to the other electrode. The bias supply supplies an RF bias to the electrodes to cause the electrodes to electrically contact each other. The applied RF voltage is adjusted using RF matching network 202. The bias voltage can have a rate of about 50 kHz to about 60 MHz or about 13.56 MHz, and the power level of the RF bias current is typically about 50 to about watts. The chamber 106 can be operated by a controller 300 of a computer, and the control unit 300 sends a command via the hardware interface to make a chamber component, including: a support member 90 for raising and lowering the substrate support member 90; 158; gas energizer 208; and throttle valve 174. Process conditions for feedback signals are measured by detectors in the chamber or by control devices (eg, airflow control 158, pressure monitors [not shown], throttle 174, and other devices) The parameters are transmitted electrically to the controller 300. Although, in order to simplify the description of the present invention, an exemplary single control device is used to illustrate the controller 300, the controller 300 may be a plurality of controllers connected to each other or a plurality of controls connected to components of the chamber 106. Accordingly, the invention is not limited to the described and exemplary embodiments herein. The controller 300 includes an electronic hardware containing circuitry that includes an integrated circuit for operating the chamber 106 and its peripheral components. The controller 3 00 is adapted to receive data input information, perform calculations, produce output signals, detect signals from detectors and other chamber components, and monitor or control process conditions in the chamber 106. For example, control, borrowing I, and coupling. The RF frequency of the 3 000 controller substrate valve different valve control signals to uncontrollable different descriptions, the raw material processor 25 200807560 300 may include a computer, the electric brain includes: ()) central processing unit (cpu), such as a conventional microprocessor from INTEL, which is connected to a memory, including: a removable storage medium (such as a CD or a floppy disk drive), and a non-removable storage medium such as a hard disk. Machines, R〇M and Ram; (i) dedicated integrated circuits (ASICs) designed and pre-programmed for specific tasks, such as taking data and other information from chamber 106, or operating specific chamber components; Iii) Interface panels for specific signal processing tasks, including: analog and digital input and output boards, communication interface panels and motor controller boards. For example, the controller interface panel can be used to handle 彳§ numbers from I% surveillance And provide data signals to the CPU. The computer also has auxiliary circuits including, for example, auxiliary processors, clock circuits, fast buffer storage areas, power supplies, and other known CPUs. Connected components. During the execution process, the RAM can be used to store the software that executes the present invention. The code and the instruction set of the present invention are usually stored in a storage medium, and when it is executed by the CPU, Li Tian from: , Track 1 calls the _ 代 指 finger in the RAM for temporary storage. The user interface between the operator and the controller 3 可 can be, for example, a negative and a data input such as a keyboard or a light pen Device. In order to select *, the screen or work d. The author uses the data input device to input the selection, and can view the selection on the display. 俨 The controller, 300 received and evaluated data nickname can be sent to Factory Automation Main Locomotive Host 'Factory Automation Host includes main software::' The main software program calculates data from different systems, platforms or chambers 1 to 6 batches of substrate 25 or over an extended period of time to determine the following The statistical process control parameters, 〇) the process performed on the substrate; (Η: 26 200807560 characteristics that vary with statistical relationships on a single substrate; or (iii) the properties of the material that are doubled with statistical relationships. The program may also be in the estimation process ongoing in-situ or other processes for controlling the engagement of the main soft «from said program comprises Applied Materials, Inc.

Materials) Purchased workstREAMTM software program. The host can also be used to provide command signals to (i) shift the particular substrate 25 from the sequence, for example, if the property is unacceptable or not within a statistically determined range of values, or if the number deviates from an acceptable range. To, (11) terminate in a particular chamber 1 〇 6 (iii) in determining the unsuitable substrate 25 characteristics or process conditioning process conditions. The factory automation host can also signal at the beginning or end of the substrate etch process corresponding to the data from the main software meter. In one embodiment, controller 3 00 includes a computer readable ' and can be stored in memory, such as on a non-removable or removable storage medium. The computer program generally includes a control software. The software includes a device for operating the chamber 106 and its parts, a process monitoring software for monitoring the cavity, a system in the room, and other control software. Computer programs can be written in a combination of languages (assembiy ianguage), C++, and Pascal. Using a traditional text editor, the code is rotated into a single file or multiple files and stored on a memory medium that can be used on a computer. If the program is entered in a higher-order language, the code is compiled, and the resulting code is used in a single batch of base data. Applicable (applied factory automatic substrate special process engraving process engraving, or a number of times, the program is estimated to provide instructions for the computer program storage media including: the process of the program's process; any such as - Fortran will be suitable Or contain code text for translation code 27

200807560 Connects to the target code of the pre-compiled library routine (1 ib ra ryr 〇utine ) to execute the connected, compiled object code, and the user invokes the target to cause the CPU to read and execute the code to perform program identification. Task. For example, in an operation using a data input device, a menu or a menu generated by a process selector on a user's display is used to input a process and a chamber number into a computer program. The computer program includes an instruction set for controlling position, airflow, air pressure, temperature, RF power level, and specific process parameters, as well as a set of instructions for monitoring the process chamber. Define the set of preset process parameters necessary to perform a specific process. Process parameters • Process conditions, including but not limited to gas composition, gas flow rate, temperature force, and gas trigger settings (such as RF or velocities). When there is a set of interconnected chambers on the stage, the chamber is labeled [can indicate a specific cavity identity. The process sequencer (s e q u e n c e r ) includes receiving a chamber label and a set of process parameters from a computer program or processor and controlling its operational command set. The process sequencer begins the process setup by passing specific process parameters to the chamber manager that controls multiple tasks in the chamber. The manager can include a set of instructions such as a substrate positioning instruction set, an airflow instruction set, a barometric control instruction set, a temperature control instruction set, a gas excitation control instruction set, and a process monitoring instruction set. Although each instruction set is described as a separate instruction set that performs a set of tasks, each instruction set may be overlapping with each other; therefore, the chamber controller 300 and the readable program described herein should not be limited. The specific square substrate positioning instruction set of the functional routine described herein includes a code for controlling the chamber components, a code, and a number of other substrates of the substrate are selected as the selected 106 chamber pressed into the chamber. The control device is a combined or computer case. And 28 200807560 the chamber component is used to place the substrate 25 on the substrate support 90 and, optionally, to lift the substrate 25 to a desired height in the chamber. For example, the substrate positioning instruction set can include ': a code for operating a transfer robot (not shown) that transfers the substrate into the chamber; for controlling the lift pins (not shown) The code, the lift pin extends through a hole in the electrostatic chuck; and a code for coordinating the movement of the robot arm and the movement of the lift pin.

The code further includes a temperature control command set that is set, for example, by independently applying different power levels to the first and second heater coils 50, 52 in the ceramic disk 24 of the holder 20. And controlling the temperature maintained in different regions of the substrate 25. The temperature control command set also regulates the heat transfer through the gas conduits 38a, 38b. The temperature control command set also includes a code for controlling the temperature and flow rate of the coolant fluid passing through the coolant passage 110 of the base 9 1 . In one embodiment, the temperature control command set includes a code for immediately starting the coolant temperature in the cooler for at least about one second before the power level applied to the heater rises. The lower value rises to a higher value. This allows the higher temperature coolant to circulate in the coolant passage of the base 9 1 before the heater heats up, thereby reducing the amount of heat flowing from the ceramic disk 24 into the base 9 1 when the heater eventually heats up, thereby effectively increasing the heat. The rate at which the substrate temperature rises. In contrast, the code includes a set of instructions for lowering the temperature of the coolant, such as at least reducing the coolant by 10 ° C and lowering the cooler to a lower value before the power level applied to the heater drops to the base. The rate at which heat is transferred from the substrate is accelerated as the temperature drops. The temperature and time of the curve in Figure 7 29

The 200807560 line describes the temperature change rate at which the substrate rises privately to 75 ° C while the coolant base is maintained at 5 °C. Figure 9 depicts the substrate temperature change as a function of the temperature profile of the electrostatic chuck that is fixed and transferred to the substrate. The substrate is maintained at the same temperature as static using the helium pressure on the back side. The graph shows how the temperature of the static rises and falls during a predetermined time interval. The two steep slopes in the figure 2 9 1 , 2 9 3 show the rapid rise and fall of temperature. The rapid temperature of the electrostatic chuck allows for a rapid coherence of the substrate temperature, thus etching previously incompatible materials such as (Poly-Si) and WSIX. The process feedback control command set can be used as a feedback control loop in the temperature monitoring command set, and the temperature monitoring command set receives temperature signals from the optical temperatures 60a, 60b to adjust the power applied to the chamber components such as heating 50, 52. The flow through the conduits 38 a, 3 8 b, the flow through the passage 1 1 0 of the base 9 1 and the coolness of the cooler. The airflow control instruction set includes code for controlling the speed of the different process gases. For example, the airflow control command set can adjust the opening size of the airflow control belt to obtain the airflow rate from the gas conduit 203 into the chamber 106. In one embodiment, the flow control command set includes a first volumetric flow rate of the gas and a second volumetric flow rate code of the second gas to set a desired volumetric flow rate ratio of the first process gas to the first gas in the process gas composition. The air pressure control command set includes a code for controlling the pressure in the chamber 106 by adjusting the throttle valve 1 74. Temperature control L 4 5 0 C The heat supply of the power supply suction seat is changed respectively. The sensitivity of the sensor coil between the polysilicon crucibles is determined by the temperature of the valve 158. Free/closed instruction set 30

200807560 may include, for example, a program for controlling the temperature of the substrate 25 during etching or a code for controlling the temperature of the wall of the chamber 106 (such as a controlled temperature). The gas trigger control command set includes, for example, a code for setting the RF power level of the electrode or antenna 186. Although described as a separate instruction set for performing a set of tasks, it should be understood that each instruction set can be integrated with each other, or that one set of code is integrated with another set of coded tasks to perform the required tasks, as described herein. The controller 300 and the computer program should not be limited to the specific embodiment of the functional routine; and the execution of the equivalent functional group arbitrary routine or combined code is also included in the scope of the present invention, although the controller refers to the chamber. The embodiment of 106 is described as yet applicable to any of the chambers described herein. The apparatus and process of the present invention have the advantage of allowing the substrate temperature to change very rapidly between different processing steps on the substrate and chamber. This rapid temperature change allows for an increase in the speed at which a plurality of steps can be performed. The system of the present invention is also capable of accurately tailoring the form of temperature rise and fall required for the process, such as an etch process in an etch phase, which is required to etch different layers or layers on the substrate. Another advantage is that the apparatus of the present invention allows the substrate to be maintained at a temperature significantly above the coolant base, while allowing for higher power to be applied to the substrate without any substrate temperature drift. The large temperature between the substrate and the coolant base has a good temperature difference between the inner and outer regions of the substrate, and the annular process conditions vary from the surface of the rain. The code's top wall is applied, but the task can be grouped. Others as described in the text. In addition, the temperature difference between the temperature and the process of the material which is performed by the bright etching process is also allowed to compensate the base 31 200807560. Although the present invention is described in detail with reference to preferred embodiments thereof, other embodiments are also feasible. of. For example, not limited to the description herein, device components such as substrate supports, coolant bases, and temperature sensors can be used in other chambers and other processes. Therefore, the scope of the appended claims should not be limited to the description of the preferred embodiments disclosed herein. [Simple description of the map]

The features, embodiments, and advantages of the present invention will be more readily understood from the description of the appended claims. However, it should be understood that the various features employed in the present invention are not limited to the specific drawings, and the present invention includes any combination of these features, wherein: Figure 1 is an embodiment of a substrate chamber having an electrostatic chuck. FIG. 2 is a schematic cross-sectional side view of an embodiment of an electrostatic chuck; FIG. 3 is a schematic bottom view of the electrostatic chuck of FIG. 1; FIGS. 4A and 4B are for an electrostatic chuck A schematic top perspective view (Fig. 4A) and a bottom perspective view (Fig. 4B) of one embodiment of the base; Fig. 5 is a schematic side view of the optical temperature sensor; Fig. 6A is a 4A diagram and Figure 4B is a schematic cross-sectional side view of the ring assembly on the electrostatic chuck; Figure 6B is a partial schematic view of the ring assembly of Figure 6A; Figure 7 is a view of the use of a cooler at a constant temperature, the substrate temperature is Schematic diagram of changes over a time interval; 32 200807560 Figure 8 is a graph depicting the temperature difference between the electrostatic chuck and the cooler versus the percentage of heater power; and Figure 9 is a graph depicting the temperature change of the electrostatic chuck . [Main component symbol description]

20 Suction seat 2 4 Disc 2 5 Substrate 2 6 Surface 28 Back 29 Projection 30 Countertop 32 Gap 31, 33 Step 34 Back 36 Electrode 38a, b Conduit 39, 41 Array 40a, b 埠 42a, b Heating zone 44 Surface 46a,b part 50,52 heater coil 54a,b part 5 8 terminal 5 8 a~d terminal 6 0a,b sensor 62 a,b hole 64a,b tip 6 6 a,b pillar 68 probe 7 0 Copper cap 72 Side wall 74 Top 76 Plug 78 Groove 79 Epoxy 80 Optical fiber bundle 82 Bushing 84 Isolation sleeve 90 Support 91 Base 92 Body 94 Top surface 95 Entrance 33 200807560

96 Suction seat receiving part 97 Terminal 98 Peripheral part 100 Retaining ring 102 Channel 1 04 Lower surface 106 Chamber 108a, b Groove 110 Channel 114 Enclosure 118 Wall 120 Electrical connector assembly 122 Bottom wall 124 Insulation sleeve 126 Window 128 Side wall 130 Top wall 150 gas delivery system 158 control valve 162 gas distributor 170 ring assembly 172 lip 173 lower surface 174 top surface 176 outer side surface 179 polymer layer 180 edge ring 182 ribbon 184 foot 186 outer wall 1 8 8 induction coil 190 convex Edge 192 RF Matching Network: 194 Projection 196 Edge 202 RF Matching Network 203 Conduit 204 Gas Source 208 Gas Exciter 210 Exhaust System 211 Exhaust Port 218 Pump 230 Power Supply 291, 293 Steep Slope 3 00 Controller 34

Claims (1)

200807560 X. Patent Application Range: 1. A substrate support assembly capable of receiving and heating a substrate in a process chamber, the assembly comprising: (a) a ceramic disk comprising a substrate receiving surface and an opposite back surface, the ceramic disk comprising: (i) an electrode embedded in the ceramic disk to generate an electrostatic force to be fixed a substrate disposed on the substrate receiving surface, and (ii) a heater embedded in the ceramic disk to heat the substrate; (b) a coolant base including a coolant Circulating through one of the coolant channels, the channel including an inlet and a terminal; and (c) a com pliant layer that bonds the ceramic disk to the coolant base, the buffer layer including (i) at least one of a crucible having a plurality of embedded aluminum fibers, or (ii) acrylic having an embedded wire mesh. 2. The substrate support assembly of claim 1, wherein the inlet and the end of the coolant passage are in phase with each other, and the coolant passage is wound back into a loop toward itself (1 〇 〇P). 3. The substrate support assembly of claim 2, wherein the opposite back surface of the ceramic disk comprises a plurality of spaced mesas having the inlet to the coolant passage a plurality of first mesas disposed adjacently, and a plurality of second mesas of 35 200807560 disposed away from the inlet of the coolant passage, and wherein: (i) the first mesas are separated by a first distance, And the first distance is smaller than a second distance between the second mesas; or (ii) the first masks have a first contact area, and the first contact area is larger than the second ones Two contact areas. 4. The substrate support assembly of claim 1, wherein one of the ceramic disks has a thickness of less than about 7 mm. 5. The substrate support assembly of claim 1, wherein the ceramic disc has a thickness of between about 4 and about 7 mm. 6. The substrate support assembly of claim 1, wherein the Tauman disc is composed of oxidized IS. 7. The substrate support assembly of claim 6, wherein the electrode and the heater comprise a crucible or an I mesh. 8. The substrate support assembly of claim 1, wherein the heater comprises a first coil and a second coil disposed radially spaced apart from each other, the first coil being located a peripheral portion of the ceramic disk, the second coil being located at a central portion of the ceramic disk, and the first coil and the second coil comprising a total resistance of less than 10 ohms 36 200807560 (Ohm ). 9. The substrate support assembly of claim 1, wherein the heater comprises a resistor of about 8.5 ohms. The substrate support assembly of claim 1, wherein the heater comprises a coil having a plurality of first coil loops separated by a first distance, and greater than a plurality of second coil loops separated by a second distance of the first distance. 11. The substrate support assembly of claim 10, wherein the second coil loops are disposed around a lift pin hole in the ceramic disc. 1 2. An electrostatic chuck capable of receiving and heating a substrate in a process chamber, the electrostatic chuck comprising: (a) a ceramic disc comprising a substrate receiving surface and an opposite back surface, The ceramic disk includes a thickness of less than about 7 mm; (b) an electrode embedded in the ceramic disk for generating an electrostatic force to fix the substrate placed on the substrate receiving surface, and c) - a heater embedded in the ceramic disc to heat the substrate received on the substrate receiving surface. 37. The electrostatic chuck of claim 12, wherein the ceramic disc comprises a thickness of between about 4 and about 7 mm. 1 . The electrostatic chuck of claim 12, wherein (i) the ceramic disc is composed of alumina; and (ii) the electrode and the heater are composed of tungsten or molybdenum. The electrostatic chuck of claim 12, wherein the opposite one of the back surfaces of the ceramic disc comprises a plurality of spaced apart mesas having a first set of mesas and a second set a mesa, wherein: (i) the first set of mesas are spaced apart by a first distance, the first distance being less than a second distance between the second set of mesas; or (ii) the first set of mesa masks having a first contact area, the first contact area being greater than a second contact area of the second set of mesas. 1 6. A buffer layer (comp 1 iant 1 ayer ) for bonding a ceramic disk to a coolant base, wherein the ceramic C disk comprises an electrode and a heater, the coolant base comprising a coolant passage in which a coolant is circulated, the buffer layer comprising at least one of: (a) a crucible having a plurality of embedded fibers embedded therein, or (b) a wire mesh having a smear Acrylic acid. 1 7. A substrate processing apparatus comprising: 38 200807560 (a) - a process chamber comprising a substrate support mounted therein, the substrate support comprising: (i) having an electrode and a heating a ceramic disc; (ii) a base below the ceramic disc, the base including a plurality of coolant passages; and (iii) a cooler for maintaining a coolant at a predetermined temperature The coolant is provided to the coolant passages of the base (b) a gas distributor for supplying a process gas to the process chamber; (c) a gas energizer for exciting the process gas; (d) an exhaust port for the process gas The process chamber is exhausted via the exhaust port; and (e) the controller includes a plurality of temperature control instruction sets, the set of instructions including a plurality of code codes for: (i) Raising a coolant temperature in the cooler to a higher level before increasing the power level of the heater applied to the ceramic disk, or (ii) reducing the application to the ceramic disk Prior to the power level of the heater, the coolant temperature in the cooler is lowered to a lower level such that the temperature of the substrate can be increased or decreased at a faster rate. The apparatus of claim 17, wherein the temperature control command sets comprise at least the power level rise or release of the heater applied to the heater in the ceramic disc. Within about one second, the temperature of the coolant in the cooler is changed to a higher level of code. The apparatus of claim 17, wherein the set of temperature control instructions comprises a one-way code that changes the temperature of the coolant by at least about 1 〇 ° C. The apparatus of claim 17, wherein the ceramic disc is bonded to the base by a buffer layer comprising (i) a stone having a plurality of embedded aluminum fibers Either or (ii) at least one of acrylic having one of the wire meshes embedded therein. 40