CN116759346B - Quick temperature control slide holder, photoresist removing etching equipment and photoresist removing process - Google Patents

Quick temperature control slide holder, photoresist removing etching equipment and photoresist removing process Download PDF

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Publication number
CN116759346B
CN116759346B CN202311029596.3A CN202311029596A CN116759346B CN 116759346 B CN116759346 B CN 116759346B CN 202311029596 A CN202311029596 A CN 202311029596A CN 116759346 B CN116759346 B CN 116759346B
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photoresist
photoresist stripping
temperature
cooling
wafer
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CN116759346A (en
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范雄
王兆丰
田文康
张笑语
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Wuxi Shangji Semiconductor Technology Co ltd
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Wuxi Shangji Semiconductor Technology Co ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H01L21/31138—Etching organic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)

Abstract

The application provides a rapid temperature control slide holder, photoresist removing etching equipment and photoresist removing technology, wherein the rapid temperature control slide holder comprises: the cooling device comprises a base, wherein cooling loops are distributed in the base and are provided with an inlet and an outlet; the heating layer is arranged on the base; the heating wire is arranged in the heating layer; the interlayer is arranged between the base and the heating layer and is used for physically isolating the heating wire and the cooling loop; the interlayer is a good conductor of heat; and the sensing part of the temperature sensor passes through the interlayer and is contacted with the heating layer. According to the application, in the wafer photoresist stripping process, the temperature of the slide holder is controlled to be slightly reduced by the process cooling liquid with the calibrated flow, so that the trend that the etching rate is continuously increased due to the rising of the surface temperature of the wafer in the photoresist stripping process is overcome, and the photoresist stripping rate is controlled to basically achieve the effect of uniform speed; on the premise of ensuring complete photoresist stripping, the residual time after photoresist stripping is controlled more accurately, and the oxidation degree of the easily oxidized film layer is reduced as much as possible.

Description

Quick temperature control slide holder, photoresist removing etching equipment and photoresist removing process
Technical Field
The application relates to the technical field of semiconductor equipment, in particular to a rapid temperature control slide table, photoresist removing etching equipment and a photoresist removing process.
Background
In etching equipment, as shown in fig. 1, the existing slide holder comprises a base 1, wherein a heating layer 2 is arranged on the base 1, heating wires 3 are distributed in the heating layer 2, and the heating wires 3 are generally arranged in a spiral or reciprocating manner; a temperature sensor 4, such as a thermocouple, is also arranged in the heating layer 2, so that the temperature of the heating layer 2 can be monitored in real time; the wafer to be processed is placed on the heating layer 2.
The photoresist related to the photoresist removing process of the wafer is usually hydrocarbon, wherein the photoresist removing process mainly comprises the steps of introducing O2 to perform a combustion reaction of C+ O, H +O under the bombardment of microwaves or ion sources, and heat is continuously generated in the process; the etching rate of the glue has strong correlation with the temperature, and heat generated in the process can be gathered on the surface part of the wafer, so that direct influence is generated, and the etching rate of the glue is accelerated. The existing slide holder is controlled at a constant temperature in a photoresist removing process, for example, the process temperature is set to be 200 ℃, and the photoresist removing speed is continuously accelerated along with the heat generated by the surface of a wafer in the photoresist removing process; this can result in a difficult to grasp time required for the entire photoresist stripping process.
For example, the 200 ℃ constant temperature photoresist removing time of a certain photoresist is estimated to be 120s, but the actual photoresist removing time is only 100s or even less due to the acceleration of photoresist removing speed, and the residual time after complete photoresist removing is 20s or more; for a part of process film layers which are easy to oxidize, an oxide film is easy to form on the surface after the glue is completely removed; taking metallic Al as an example, al will react with O2: 4al+3o2=2al2o3, al is used as a conductive material in a wafer structure, and Al2O3 is very poor in conductivity and is basically nonconductive at normal temperature, which affects part of the performance of the product.
Disclosure of Invention
In order to solve at least one technical problem in the prior art, the embodiment of the application provides a rapid temperature control slide table, photoresist removing etching equipment and photoresist removing technology, so as to control the photoresist removing rate to basically achieve the effect of uniform speed, facilitate better control of the remaining time after photoresist removing, and reduce the oxidation degree of an easily oxidized film layer as far as possible. In order to achieve the technical purpose, the technical scheme adopted by the embodiment of the application is as follows:
in a first aspect, an embodiment of the present application provides a rapid temperature control slide mount, including:
the cooling device comprises a base, wherein cooling loops are distributed in the base and are provided with an inlet and an outlet;
the heating layer is arranged on the base;
the heating wire is arranged in the heating layer;
the interlayer is arranged between the base and the heating layer and is used for physically isolating the heating wire and the cooling loop; the interlayer is a good conductor of heat;
the sensing part of the temperature sensor passes through the interlayer and contacts with the heating layer;
the cooling loop is used for introducing process cooling liquid during the photoresist stripping process; the flow of the process coolant needs to be calibrated in advance, and when the flow of the process coolant is calibrated, the flow calibration method comprises the following steps:
setting a preset time length when a wafer photoresist stripping process starts, wherein the preset time length is smaller than a preset photoresist stripping time length but larger than 90% of the preset photoresist stripping time length; introducing a process cooling liquid with a preset flow into the cooling loop, and reducing the temperature of the heating layer from the first photoresist stripping process temperature to the second photoresist stripping process temperature within a preset period of time;
respectively measuring the etching rate of photoresist stripping in at least 3 time periods within a preset duration; comparing the etching rates of the time periods;
if the deviation of the etching rates of all the adjacent time periods is within the deviation range threshold value, ending the calibration; if the deviation range threshold value is exceeded and the etching rate is increased, increasing the flow of the process cooling liquid, replacing the wafer and repeating the calibration process; if the deviation range threshold value is exceeded and the etching rate is reduced, the flow of the process cooling liquid is reduced, and the wafer is replaced to repeat the calibration process; until the deviation of the etching rates of all adjacent time periods is within a deviation range threshold;
when the photoresist stripping process is carried out, the preset photoresist stripping time length is added with a preset remaining time to be used as the complete photoresist stripping time length, and process cooling liquid with calibrated flow is introduced into the cooling loop within the whole complete photoresist stripping time length.
Further, the rapid control Wen Zaipian platform also comprises a temperature controller; the temperature sensor is connected with a signal input end of the temperature controller, and an output end of the temperature controller is connected with the heating wire.
Further, the rapid control Wen Zaipian station also comprises an inlet pipe and an outlet pipe; the inlet of the cooling loop is connected with the inlet pipe, and the outlet of the cooling loop is connected with the outlet pipe.
Further, the cooling circuit is embedded on the surface of the base, and the interlayer is arranged on the surface of the base and can seal the top of the cooling circuit.
In a second aspect, an embodiment of the present application provides a photoresist stripping apparatus, including a rapid temperature control stage as described above, and a process chamber;
the bottom of the process cavity is provided with a pipeline inlet and a pipeline outlet; the bottom of the base is connected with a hollow base leg; the inlet pipe, the outlet pipe, the temperature sensor and the temperature controller are all positioned in the inner space of the seat leg and can be led out from the inlet and the outlet of the pipeline; the lower port of the pedestal is assembled in a butt joint with the pipeline inlet and outlet so that the process cavity can be kept sealed.
Further, the photoresist removing etching equipment further comprises a first valve and a second valve; one end of the first valve is used for accessing control gas, and the other end of the first valve is connected with an inlet pipe; one end of the second valve is used for being connected with process cooling liquid, and the other end of the second valve is connected with an inlet pipe.
Further, a one-way valve is arranged between the first valve and the inlet pipe, and the direction of the one-way valve is from the first valve to the direction of the inlet pipe.
In a third aspect, an embodiment of the present application provides a photoresist stripping process, which is suitable for a photoresist stripping apparatus as described above, and includes the following steps:
a step of calibrating process coolant flow, comprising:
step S110, enabling the process conditions in the process cavity to meet the wafer photoresist removing process conditions; the wafer photoresist removing process conditions comprise: the heating layer is kept heated, the temperature of the heating layer is the first photoresist removing process temperature, and the process cavity is vacuumized and then is filled with process gas and auxiliary gas;
step S120, when a wafer photoresist stripping process starts, setting a preset time length which is less than a preset photoresist stripping time length but greater than 90% of the preset photoresist stripping time length; introducing a process cooling liquid with a preset flow into the cooling loop, and reducing the temperature of the heating layer from the first photoresist stripping process temperature to the second photoresist stripping process temperature within a preset period of time;
respectively measuring the etching rate of photoresist stripping in at least 3 time periods within a preset duration; comparing the etching rates of the time periods;
step S130, if the deviation of the etching rates of all adjacent time periods is within a deviation range threshold value, ending the calibration; if the deviation range threshold value is exceeded and the etching rate is increased, increasing the flow rate of the process cooling liquid, replacing the wafer and repeating the steps S110 to S120; if the deviation range threshold is exceeded and the etching rate is reduced, reducing the flow of the process cooling liquid, replacing the wafer and repeating the steps S110 to S120; until the deviation of the etching rates of all adjacent time periods is within a deviation range threshold;
a photoresist stripping step comprising:
step S210, enabling the process conditions in the process cavity to meet the wafer photoresist removing process conditions; adding a preset remaining time to the preset photoresist removing time to be used as a complete photoresist removing time;
step S220, introducing process cooling liquid with calibrated flow into the cooling loop in the whole complete photoresist stripping time period;
step S230, after the complete photoresist removing time is over, introducing control gas into the cooling loop to blow off process cooling liquid in the cooling loop;
then, photoresist removing process of the next wafer is carried out.
Further, the temperature of the second photoresist stripping process is 6-10 ℃ lower than that of the first photoresist stripping process.
Further, the preset remaining time is set to 4 to 6 seconds.
The technical scheme provided by the embodiment of the application has the beneficial effects that: according to the application, in the wafer photoresist stripping process, the temperature of the slide holder is controlled to be slightly reduced by the process cooling liquid with the calibrated flow, so that the trend that the etching rate is continuously increased due to the rising of the surface temperature of the wafer in the photoresist stripping process is overcome, and the photoresist stripping rate is controlled to basically achieve the effect of uniform speed; on the premise of ensuring complete photoresist stripping, the residual time after photoresist stripping is controlled more accurately, and the oxidation degree of the easily oxidized film layer is reduced as much as possible.
Drawings
Fig. 1 is a schematic view of a prior art stage.
Fig. 2 is an electrical schematic diagram of a stage and photoresist removing etching apparatus according to an embodiment of the present application.
FIG. 3 is a flow chart of a photoresist stripping process according to an embodiment of the application.
Detailed Description
The present application will be described in further detail with reference to the drawings and examples, in order to make the objects, technical solutions and advantages of the present application more apparent. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the application.
In the description of the embodiments of the present application, it should be noted that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," "outer," and the like indicate an orientation or a positional relationship based on that shown in the drawings, and are merely for convenience of description and to simplify the description, and do not indicate or imply that the apparatus or elements to be referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present application. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In describing embodiments of the present application, it should be noted that, unless explicitly stated and limited otherwise, the terms "mounted," "connected," and "connected" should be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; the two components can be directly connected or indirectly connected through an intermediate medium, or can be communicated inside the two components, or can be connected wirelessly or in a wired way. The specific meaning of the above terms in the present application will be understood in specific cases by those of ordinary skill in the art.
In addition, the technical features of the different embodiments of the present application described below may be combined with each other as long as they do not collide with each other.
As shown in fig. 2, first, a rapid temperature control slide stage according to an embodiment of the present application includes:
a base 1, wherein a cooling loop 101 is distributed in the base 1, and the cooling loop 101 is provided with an inlet 102 and an outlet 103;
the heating layer 2 is arranged on the base 1;
a heating wire 3 arranged in the heating layer 2;
the interlayer 5 is arranged between the base 1 and the heating layer 2 and is used for physically isolating the heating wire 3 from the cooling circuit 101; the interlayer 5 is a good conductor of heat;
and a temperature sensor 4, wherein a sensing part of the temperature sensor 4 passes through the interlayer 5 and is in contact with the heating layer 2.
Wherein the heating wires 3 are arranged substantially uniformly in the heating layer 2, for example, they can be arranged spirally or reciprocally; when the photoresist removing process is performed on the surface of the wafer, the wafer is placed on the heating layer 2, the heating layer 2 is heated to the first photoresist removing process temperature, and the temperature sensor 4 can monitor the temperature of the heating layer 2; when the photoresist stripping process starts, a certain flow of process cooling liquid is introduced through the inlet 102 of the cooling loop 101 to take away a part of heat so as to offset the heat continuously generated on the surface of the wafer, and the flow of the process cooling liquid is controlled, so that the photoresist stripping rate basically achieves the effect of uniform speed, the excessive residual time after photoresist stripping caused by the increase of the photoresist stripping rate can be prevented, and the oxidation degree of the easily oxidized film layer on the wafer is reduced as much as possible.
Further, the rapid control Wen Zaipian platform also comprises a temperature controller 6; the temperature sensor 4 is connected with a signal input end of the temperature controller 6, and an output end of the temperature controller 6 is connected with the heating wire 3; the temperature controller 6 can set a heating temperature and control heating power of the heating wire 3.
Further, the rapid control Wen Zaipian station also comprises an inlet pipe 10 and an outlet pipe 11; an inlet 102 of the cooling circuit 101 is connected with the inlet pipe 10, and an outlet 103 of the cooling circuit 101 is connected with the outlet pipe 11; the process coolant can be introduced into the cooling circuit 101 through the inlet pipe 10, and the process coolant in the cooling circuit 101 can be led out through the outlet pipe 11, and then is returned to the cooling circuit 101 after external heat dissipation, thereby forming a cooling cycle.
Specifically, an insulating layer is arranged on the surface of the heating wire 3; so that the heating layer 2 and the interlayer 5 can be metal layers; ceramic materials can also be used for the heating layer 2 and the interlayer 5.
In one embodiment, the cooling circuit 101 is embedded on the surface of the base 1, and the interlayer 5 is arranged on the surface of the base 1 and can seal the top of the cooling circuit 101; the direct contact of the cooling circuit 101 with the barrier 5 can accelerate the heat exchange between the two.
As shown in fig. 2, the embodiment of the present application further provides a photoresist stripping apparatus, which includes the rapid temperature control stage and the process chamber 200 as described above;
the bottom of the process cavity 200 is provided with a pipeline inlet and outlet 201; the bottom of the base 1 is connected with a hollow base leg 104; the inlet pipe 10, the outlet pipe 11, the temperature sensor 4 and the temperature controller 6 are all positioned in the inner space of the seat leg 104 and can be led out from the pipeline inlet and outlet 201; the lower port of the pedestal 104 is butt-fitted with the pipeline inlet 201 so that the process chamber 200 can remain sealed; the process chamber 200 is often required to maintain a certain vacuum level during etching and other processes.
More preferably, the photoresist stripping apparatus further comprises a first valve 7 and a second valve 8; one end of the first valve 7 is used for accessing control gas, and the other end is connected with an inlet pipe 10; one end of the second valve 8 is used for being connected with process cooling liquid, and the other end of the second valve is connected with an inlet pipe 10; the accessed control gas can be used as temperature control gas to take away a part of heat, and the other important function of the control gas is that the process cooling liquid in the cooling loop 101 can be quickly blown out after the photoresist removing process of a wafer is finished; the temperature of the heating layer 2 can be quickly raised to the temperature of the first photoresist removing process so as to perform the photoresist removing process of the next wafer as soon as possible, thereby improving the efficiency; the above first valve 7 and second valve 8 may be pneumatic valves or solenoid valves;
more preferably, a one-way valve 9 is arranged between the first valve 7 and the inlet pipe 10, and the conduction direction of the one-way valve 9 is from the first valve 7 to the inlet pipe 10; the non-return valve 9 prevents the process coolant from erroneously entering the inlet line for the control gas when the first valve 7 is not closed.
Based on the photoresist removing etching equipment provided by the embodiment, the embodiment of the application also provides a photoresist removing process, which comprises the following steps:
a step of calibrating process coolant flow, comprising:
step S110, making the process conditions in the process chamber 200 meet the wafer photoresist removing process conditions; the wafer photoresist removing process conditions comprise: the heating layer 2 is kept heated, the temperature of the heating layer 2 is the first photoresist removing process temperature, the process cavity 200 is vacuumized and then the process gas and the auxiliary gas are introduced;
the temperature of the first photoresist stripping process depends on the specific photoresist, and is 200 ℃ in the embodiment; the process gas is typically O2 and the assist gas may be N2; the auxiliary gas may also include water vapor to remove chloride ions from the process prior to the wafer photoresist stripping process;
step S120, when a wafer photoresist stripping process starts, setting a preset time length which is less than a preset photoresist stripping time length but greater than 90% of the preset photoresist stripping time length; introducing a process cooling liquid with an initial fixed flow into the cooling loop 101, and reducing the temperature of the heating layer 2 from the first photoresist stripping process temperature to the second photoresist stripping process temperature within a preset period of time;
respectively measuring the etching rate of photoresist stripping in at least 3 time periods within a preset duration; comparing the etching rates of the time periods;
in the embodiment, the temperature of the second photoresist stripping process is 6-10 ℃ lower than that of the first photoresist stripping process;
step S130, if the deviation of the etching rates of all adjacent time periods is within a deviation range threshold value, ending the calibration; if the deviation range threshold value is exceeded and the etching rate is increased, increasing the flow rate of the process cooling liquid, replacing the wafer and repeating the steps S110 to S120; if the deviation range threshold is exceeded and the etching rate is reduced, reducing the flow of the process cooling liquid, replacing the wafer and repeating the steps S110 to S120; until the deviation of the etching rates of all adjacent time periods is within a deviation range threshold;
the deviation of the etching rate may be expressed as a deviation rate, for example, dividing the difference between the etching rate of a certain period and the etching rate of a previous period by the etching rate of the previous period; the deviation range threshold may be set to + 0.5% or + 0.3%;
a photoresist stripping step comprising:
step S210, enabling the process conditions in the process cavity 200 to meet the wafer photoresist removing process conditions; adding a preset remaining time to the preset photoresist removing time to be used as a complete photoresist removing time;
the preset remaining time may be set to several seconds, for example, 4 to 6 seconds;
step S220, introducing process cooling liquid with calibrated flow into the cooling loop 101 in the whole complete photoresist stripping time period;
step S230, after the complete photoresist removing time is over, introducing control gas into the cooling loop 101 to blow off process cooling liquid in the cooling loop 101;
then, photoresist removing process of the next wafer is carried out.
In the above process steps, the introduction of the process coolant or control gas can be switched by the first valve 7, the second valve 8; n2 or Ar can be adopted as the control gas; since the predetermined photoresist strip time period is very close to the predetermined time period when the process coolant flow is calibrated, the etch rate within the predetermined photoresist strip time period is substantially the same as or has very little deviation from the etch rate when the process coolant flow is calibrated. The preset photoresist removing time is slightly longer than the preset time when the process cooling liquid flow is calibrated, and the preset remaining time is added, so that each wafer of a batch can be completely removed.
Example 1
In an embodiment one, the first photoresist stripping process temperature is set to 200 ℃; the process gas is O2, and the auxiliary gas is N2 and H2O (gaseous state); the process chamber 200 is vacuumized firstly, and the pressure after the process gas and the auxiliary gas are introduced is 600mt; calibrating the preset duration of the flow of the process cooling liquid to be 60 seconds; the predetermined photoresist stripping time period may be 65 seconds; the flow rate of the process cooling liquid is 2GPM; the photoresist is required to be removed from the wafer, and the manufacturer is TOKYO HKA KOGYO CO and LTD, and the model is TDMR-AR80 HP; the temperature of the heating layer is reduced from 200 ℃ to 190 ℃ within 60 seconds after the process cooling liquid is introduced, and the etching rate of photoresist stripping is measured respectively in the first 20 seconds, the second 20 seconds and the third 20 seconds for 3 time periods, see table one;
list one
As can be seen from table one, the etching rates in the three periods are 37297 a/min, 37382 a/min and 37411 a/min, respectively, and the deviation rates are 0.23% and 0.08% respectively; therefore, after 2GPM flow of process cooling liquid is introduced, the photoresist stripping rate basically reaches a uniform speed.
Comparative example one
In comparative example one, the first photoresist stripping process temperature was set at 200 ℃; the process gas is O2, and the auxiliary gas is N2 and H2O (gaseous state); the process chamber 200 is vacuumized firstly, and the pressure after the process gas and the auxiliary gas are introduced is 600mt; the process cooling liquid is not introduced; performing a photoresist removing process for 60 seconds; the etch rates of photoresist removal were measured at the first 20 second, second 20 second and third 20 second 3 time periods, respectively, see table two;
watch II
As can be seen from the second table, in the conventional 200 ℃ constant temperature photoresist removing process, the etching rate of photoresist removal tends to be continuously accelerated along with the continuous increase of the surface temperature of the wafer; the actual photoresist removing time is difficult to grasp, the residual time after photoresist removing is too long, and an oxide film is easy to form on the surface of a partially easily oxidized process film layer after the photoresist is completely removed.
Finally, it should be noted that the above-mentioned embodiments are only for illustrating the technical solution of the present application, and not for limiting the same, and although the present application has been described in detail with reference to the examples, it should be understood by those skilled in the art that modifications and equivalents may be made to the technical solution of the present application without departing from the spirit and scope of the technical solution of the present application, and all such modifications and equivalents are intended to be encompassed in the scope of the claims of the present application.

Claims (5)

1. A photoresist removing process is suitable for photoresist removing etching equipment,
the photoresist removing etching equipment comprises a rapid temperature control slide table and a process cavity (200);
the rapid temperature control slide mount includes:
the cooling device comprises a base (1), wherein cooling loops (101) are distributed in the base (1), and the cooling loops (101) are provided with an inlet (102) and an outlet (103);
the heating layer (2) is arranged on the base (1);
the heating wire (3) is arranged in the heating layer (2);
the interlayer (5) is arranged between the base (1) and the heating layer (2) and is used for physically isolating the heating wire (3) and the cooling loop (101); the interlayer (5) is a good conductor of heat;
a temperature sensor (4), wherein a sensing part of the temperature sensor (4) passes through the interlayer (5) to be in contact with the heating layer (2);
a temperature controller (6); the temperature sensor (4) is connected with a signal input end of the temperature controller (6), and an output end of the temperature controller (6) is connected with the heating wire (3);
an inlet pipe (10) and an outlet pipe (11); an inlet (102) of the cooling circuit (101) is connected with an inlet pipe (10), and an outlet (103) of the cooling circuit (101) is connected with an outlet pipe (11);
the bottom of the process cavity (200) is provided with a pipeline inlet and outlet (201); the bottom of the base (1) is connected with a hollow base leg (104); the inlet pipe (10), the outlet pipe (11), the temperature sensor (4) and the temperature controller (6) are all positioned in the inner space of the seat leg (104) and can be led out from the pipeline inlet and outlet (201); the lower port of the pedestal (104) is in butt joint assembly with the pipeline inlet and outlet (201) so as to enable the process cavity (200) to be kept sealed;
the photoresist removing etching equipment further comprises a first valve (7) and a second valve (8); one end of the first valve (7) is used for accessing control gas, and the other end of the first valve is connected with an inlet pipe (10); one end of the second valve (8) is used for being connected with process cooling liquid, and the other end of the second valve is connected with an inlet pipe (10);
the method is characterized by comprising the following steps of:
a step of calibrating process coolant flow, comprising:
step S110, enabling the process conditions in the process cavity (200) to meet the wafer photoresist removing process conditions; the wafer photoresist removing process conditions comprise: the heating layer (2) is kept heated, the temperature of the heating layer (2) is the first photoresist removing process temperature, and the process cavity (200) is vacuumized and then is filled with process gas and auxiliary gas;
step S120, when a wafer photoresist stripping process starts, setting a preset time length which is less than a preset photoresist stripping time length but greater than 90% of the preset photoresist stripping time length; introducing a primary fixed flow of process cooling liquid into the cooling loop (101), and reducing the temperature of the heating layer (2) from the first photoresist stripping process temperature to the second photoresist stripping process temperature within a preset period of time;
respectively measuring the etching rate of photoresist stripping in at least 3 time periods within a preset duration; comparing the etching rates of the time periods;
step S130, if the deviation of the etching rates of all adjacent time periods is within a deviation range threshold value, ending the calibration; if the deviation range threshold value is exceeded and the etching rate is increased, increasing the flow rate of the process cooling liquid, replacing the wafer and repeating the steps S110 to S120; if the deviation range threshold is exceeded and the etching rate is reduced, reducing the flow of the process cooling liquid, replacing the wafer and repeating the steps S110 to S120; until the deviation of the etching rates of all adjacent time periods is within a deviation range threshold;
a photoresist stripping step comprising:
step S210, enabling the process conditions in the process cavity (200) to meet the wafer photoresist removing process conditions; adding a preset remaining time to the preset photoresist removing time to be used as a complete photoresist removing time;
step S220, introducing process cooling liquid with calibrated flow into the cooling loop (101) in the whole complete photoresist stripping time period;
step S230, after the complete photoresist removing time is over, introducing control gas into the cooling loop (101) to blow off process cooling liquid in the cooling loop (101);
then, photoresist removing process of the next wafer is carried out.
2. A photoresist stripping process as claimed in claim 1, characterized in that,
the temperature of the second photoresist stripping process is 6-10 ℃ lower than that of the first photoresist stripping process.
3. A photoresist stripping process as claimed in claim 1, characterized in that,
the preset remaining time is set to be 4-6 seconds.
4. A photoresist stripping process as claimed in claim 1, characterized in that,
the cooling circuit (101) is embedded on the surface of the base (1), and the interlayer (5) is arranged on the surface of the base (1) and can seal the top of the cooling circuit (101).
5. A photoresist stripping process as claimed in claim 1, characterized in that,
a one-way valve (9) is arranged between the first valve (7) and the inlet pipe (10), and the conduction direction of the one-way valve (9) is from the first valve (7) to the inlet pipe (10).
CN202311029596.3A 2023-08-16 2023-08-16 Quick temperature control slide holder, photoresist removing etching equipment and photoresist removing process Active CN116759346B (en)

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CN114944348A (en) * 2021-02-15 2022-08-26 东京毅力科创株式会社 Substrate heating apparatus, substrate heating method, and method for manufacturing substrate heating section

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JP2005136025A (en) * 2003-10-29 2005-05-26 Trecenti Technologies Inc Semiconductor manufacturing apparatus, method of manufacturing semiconductor device, and wafer stage
JP5823915B2 (en) * 2012-05-29 2015-11-25 新光電気工業株式会社 Manufacturing method of electrostatic chuck

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CN101110381A (en) * 2006-07-20 2008-01-23 应用材料股份有限公司 Substrate processing with rapid temperature gradient control
CN106711006A (en) * 2015-11-13 2017-05-24 北京北方微电子基地设备工艺研究中心有限责任公司 Upper electrode component and semiconductor processing equipment
CN114944348A (en) * 2021-02-15 2022-08-26 东京毅力科创株式会社 Substrate heating apparatus, substrate heating method, and method for manufacturing substrate heating section

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