TWI373810B - Substrate processing with rapid temperature gradient control - Google Patents

Description

1373810 IX. INSTRUCTIONS OF THE INVENTION: TECHNICAL FIELD OF THE INVENTION Embodiments of the present invention relate to the treatment of substrates by rapid gradient control over the entire substrate. [Prior Art] In the process of processing a substrate such as a semiconductor and a display, a susceptor is fixed to the chamber to process a layer on the substrate. Commonly used electrostatic chucks include electrodes covered with ceramic pots. When the electrodes are energized, electrostatic charges accumulate in the electrodes and the substrate, and electrical power is thereby generated to secure the substrate to the holder. Typically, the heat transfer rate across the small gap at the interface between the back side of the substrate and the suction surface is promoted by controlling the substrate temperature by holding helium gas over the substrate. The electrostatic suction base is supported by a base having a passage for liquid to flow therethrough to heat the suction base. Once the substrate is firmly secured to the holder, gas is introduced into the chamber and a plasma is formed to treat the substrate. The substrate can be processed by CVD, PVD, etching, implantation (impUnt), deuterated nitridation or the like. In this conventional substrate process, the process will be maintained at a single temperature during processing. Typically, a wafer carrier (bUde) is used to pass through a slit in the chamber and placed on a lift pin that extends through the body of the electrostatic chuck. Then, the lift pins are retracted from the suction cup, and the substrate is placed on the surface of the suction seat. The temperature of the substrate rises rapidly to a predetermined degree, and then the heater in the suction seat or the electric speed formed in the chamber is used for the static temperature. A static filling table of the line can be used by the process or by the process. The material is extended to the base system to set the temperature slurry to 5 1373810

This temperature is kept stable. The temperature of the substrate can be further controlled by controlling the temperature and flow rate of the coolant flowing through the base passage and the suction seat, wherein the coolant is used to remove heat from the suction seat. While conventional process chambers are suitable for maintaining a stable single temperature during processing, such process chambers do not allow the substrate temperature to change rapidly over a process cycle. In some processes, it is desirable to have the substrate temperature rise or fall rapidly to achieve a specific temperature profile during the process. For example, in different stages of the etching process, the substrate temperature needs to be rapidly changed to etch different materials on the substrate at different temperatures. In these various etching stages, the process gases supplied to the chamber may also differ in composition from the same composition. In another embodiment, in the etching process, the degree distribution facilitates deposition of sidewall polymers on the walls of the feature features on the substrate, and improves etching after the same etching process. The temperature of the process is removed to remove the sidewall polymer, or vice versa. Alternatively, in a deposition process, for example, to first deposit a nucleating layer on a substrate and then grow a heat treated laminate on the substrate, it may be desirable to have the first process temperature above or below the second system. degree. Conventional substrate processing chambers and their internal structures are often unable to adequately increase or decrease the temperature of the substrate. During the manufacturing process, when the substrate is in a non-uniform process condition in its radial direction, another complication occurs, which can result in an uneven homogeneous processing band. Such uneven process conditions can be caused by the distribution of gas or plasma species in the chamber which is typically varied based on the location of the inlet and outlet ports in the chamber. It is produced in the unitary case ' or the temperature side by the homonuclear sedimentation temperature base 6 1373810

The mass transport mechanism can also change the rate of diffusion and arrival of gaseous species in different regions of the substrate surface. Non-uniform thermal loading in the chamber can also cause non-uniform processing, for example, non-uniform thermal loading due to non-uniform energy coupling from the plasma sheath to the substrate or from the chamber walls. It is undesirable to have processing strips or other processing differences found on the substrate as this would result in electronic components fabricated in different regions of the substrate (e.g., perimeter and central substrate regions) having different characteristics. Therefore, it is desirable to be able to reduce variations in processing rates and other process characteristics on the surface of the substrate during processing of the substrate. Accordingly, it is desirable to have a process chamber and chamber component that allows the temperature of the substrate being processed in the chamber to rise and fall rapidly. Moreover, it is also desirable to control the temperature of different regions of the treated surface of the substrate to reduce the effects of uneven processing conditions on the surface of the substrate along the radial direction. In addition, it is also desirable to control the temperature distribution of the substrate during the process. [Summary of the Invention]

It is an object of the present invention to provide a process chamber and chamber component that allows for rapid temperature control of different regions of the substrate to be treated, which substantially solves one or more problems due to disadvantages of the prior art. According to an aspect of the present invention, there is provided a substrate support assembly capable of receiving and heating a substrate in a process chamber, the assembly comprising: (a) a ceramic disk including a substrate receiving surface and an opposite back surface, and The ceramic disk includes (i) an electrode embedded in the ceramic disk to generate an electrostatic force to fix the substrate placed on the substrate receiving surface, and (ii) embedded in the ceramic disk for heating a heater for the substrate; (b) a coolant base including a coolant passage in which the coolant is circulated, and the passage includes an inlet and a terminal; and (c) a buffer layer that bonds the Tauman disc to the coolant The base, and the buffer layer comprises at least one of (i) a crucible having embedded aluminum fibers, or (ii) acrylic having an embedded wire mesh.

According to another aspect of the present invention, there is provided an electrostatic chuck capable of receiving and heating a substrate in a process chamber, comprising: (a) a ceramic disk comprising a substrate receiving surface and an opposite back surface, and The ceramic disk includes a thickness of less than about 7 mm; (b) an electrode embedded in the ceramic disk for generating an electrostatic force to fix the substrate placed on the substrate receiving surface, and (c) embedded in the ceramic A heater in the disc to heat the substrate that is carried on the substrate receiving surface.

According to another aspect of the present invention, there is provided a compliant layer for bonding a ceramic disc including an electrode and a heater to a coolant base, and the coolant base includes circulating a coolant therethrough The coolant passage, the buffer layer comprises at least one of: (a) a crucible having embedded aluminum fibers, or (b) an acrylic having an embedded wire mesh. According to another aspect of the present invention, there is provided a substrate processing apparatus comprising: (a) a process chamber including a substrate support mounted therein, and the substrate support comprising: (i) having a ceramic disc with an electrode and a heater; (ii) a base below the ceramic disc, the base including a plurality of coolant passages; and (iii) one for maintaining a coolant at 8 1373810

a cooler at a predetermined temperature, a coolant providing a coolant passage to the base; (b) a gas distributor for supplying a process gas to the process chamber; and (c) a gas actuator for Exciting process gas; (d) an exhaust port for exhausting process gas from the process chamber through the exhaust port; and (e) a controller including a plurality of temperature control instruction sets, the instruction set including The code is used to: (i) raise the temperature of a coolant in the cooler to a higher level before increasing the power level of the heater applied to the ceramic disk, or (ii) reduce the application The temperature of the coolant in the cooler is lowered to a lower level before the power level of the heater in the ceramic disk, so that the temperature of the substrate can be increased or decreased at a faster rate. Therefore, the present invention can independently control the temperature of different heating zones in the ceramic disk on the electrostatic chuck, thereby achieving rapid temperature control of different substrate regions.

One or more embodiments of the present invention will be described in detail below with reference to the drawings. Other objects, features, aspects and advantages of the present invention will become more apparent from the description and appended claims appended claims claims An exemplary program. The chamber 106 is represented by a Decoupled Plasma Source (DPSTM) chamber, which is an inductive light plasma that is supplied by Applied Materials Inc. in Santa Clara, Calif. 9 1373810

room. The DPS chamber 106 can be used in the CENTURA® Integrated Processing System, supplied by Applied Materials Inc. of St. Kerala. However, other process chambers can also be used in conjunction with the present invention, including, for example, capacitively coupled parallel plate chambers, electromagnetically enhanced ion etching chambers, inductively coupled plasma cavities with different designs, and deposition chambers. . Although the apparatus and process of the present invention are advantageously used in a DPS chamber, the chamber is only used to describe the invention and should not be construed or construed as limiting the scope of the invention.

Referring to Fig. 1, a typical chamber 106 includes a housing 114 formed by a perimeter wall 118, and the perimeter wall 118 includes side walls 128, a bottom wall 122 and a top wall 130. The top wall 130 may comprise a flat shape as shown, or for example, U.S. Patent No. 7,074,723, to Chinn et al., entitled "Using a Plasma Source Gas Regulating Etch System and Plasma Etching Depth Features" A dome shape having a multi-radius arch shape as described in the Invention of Plasma Etching a Deeply Respirated Feature in a Substrate Using a Plasma Source Gas Modulated Etchant System, and the entire contents of the patent are incorporated herein. For reference, the wall 118 is typically made of a metal or ceramic material such as aluminum. The top wall 130 and/or the side wall 128 may also have a radiation transmissive window 126' that allows radiation to pass through the chamber to monitor the chamber 1 The process is being carried out in 〇 6. The plasma is formed in a process zone defined by the process chamber 106, the substrate support and the dome wall 130. The substrate 25 is supported in the chamber 106 and is located on the substrate. On the receiving surface 26 of the support member, the substrate support member comprises an electrostatic suction seat 20, and the suction seat 2 is 10 1373810

It is placed on the base 91. As shown in FIGS. 1 and 2, the electrostatic chuck includes a ceramic puck 24 having a substrate receiving surface 26 as a top surface of the ceramic disk 24 and used to receive the substrate. The back ceramic disc 24, which also has a surface opposite the substrate receiving surface 26, has a peripheral projection 29 having a third step 31 and a second step 33. The ceramic disk 24 includes at least one of alumina, nitrous oxide, lanthanum carbide, tantalum nitride, titanium oxide, cerium oxide, and a mixture thereof. The ceramic disk 24 can be made of a single ceramic block by hot pressing and sintering of the ceramic powder, and then processing the sintered article to form the final shape of the suction cup 20. It is believed that the thickness of the ceramic disk 24 substantially affects the ability of the substrate to rise and fall. If the ceramic disk 24 is too thick, the disk 24 takes a long time and still does not allow the temperature to rise rapidly and lower. As a result, the temperature of the upper substrate also takes a correspondingly long time to reach the desired setpoint temperature. In addition, it is also considered that if the ceramic disk 24 is too small, it cannot maintain the substrate at a steady state temperature during the process, and thus the substrate temperature fluctuates. In addition, the thickness of the ceramic disk 24 also affects the operation of the electrode 36 embedded in the ceramic disk 24. If the thickness of the layer of ceramic discs 24 directly above the embedding 36 is too thick, the electrode 36 cannot couple energy to the plasma formed in the finished region. On the other hand, if the thickness of the ceramic disk 24 above the electrode 36 is too thin, the radio frequency (RF) voltage applied to 36 can be discharged to the plasma to cause arcing and plasma instability. Therefore, the thickness of the ceramic disk 24 is precisely controlled to be less than about 7 mm, for example, a thickness of about 4 to about 7 mm; and in the case of an I 20 ceramic circle of 25 ° 28 » an aluminum, the mechanical fast ceramic of the body h Inda thin, caused by the electrode is effective, such as the electrode caused by the side 11 1373810

In the case, the ceramic disc has a thickness of 5 mm. At these thickness levels, the ceramic 24 allows the substrate temperature to rise and fall rapidly during the process, and can simultaneously fluctuate in temperature without substantially causing plasma instability. Electrode 36 embedded in ceramic disk 24 is used to generate static electricity to securely place the substrate on substrate receiving surface 26 and optionally to capacitively couple energy to the plasma formed in chamber 106. The electrical box is a conductor such as a metal and can be formed as a monopolar or bipolar electrode. The electrode includes a single conductor and has a single connection to an external power source and cooperates with a charged species of plasma formed over the chamber to apply an electrical bias to the entire substrate secured to the holder 20. Bipolar power has two or more conductors, wherein the conductors are pressed relative to the other conductor to create an electrostatic force for holding the substrate. The electrode 36 can be formed into a wire mesh or a metal disk having a suitable opening area. For example, the electrode 36 including the electrode may be a continuous wire mesh embedded in the ceramic disk as shown. An embodiment of the electrode 36 comprising a bipolar electrode is a pair of embedded C-shaped discs that straddle the C-shaped straight edge. The electrode 36 may be composed of aluminum, copper, iron, molybdenum, titanium, tungsten or the like. One version of electrode 36 includes a molybdenum mesh. The electrode 36 is connected to the wiring wood, wherein the terminal 58 supplies electrical power from the external power source 230 to the electrode 3, which includes a DC voltage source, and optionally an RF voltage source. Optionally, a plurality of heat transfer gas conduits 38a, 38b traverse the ceramic disk 24 and terminate at 40a, 40b on the substrate receiving surface 26 of the suction seat 20 to provide heat transfer gas to the substrate. Surface 26. Disc reduction force, ground, i 36 unipolar electrical connection, extremely eccentric and gold unipolar single can face the face gold group t 58 should be to the ground, porcelain round 埠 at the base 12 1373810

The heat transfer gas (which may be, for example, helium) is provided below the back side 34 of the material to conduct heat from the upper substrate 25 to the receiving surface 26 of the ceramic disk 24. For example, the first gas conduit 38a is configured to provide a heat transfer gas to the central heating zone 42a of the substrate receiving surface 26, and the second gas conduit 38b is configured to provide a heat transfer gas to the peripheral heating zone of the substrate receiving surface 26. 42 b. The center of the substrate receiving surface 26 of the ceramic disk 24 and the peripheral heating zones 42a, 42b maintain respective portions of the substrate surface 44 (eg, the center and peripheral portions 46a, 46b above the substrate 25) at different temperatures, In order to compensate for the uneven concentric processing strip, the concentric processing strip is caused by a corresponding uneven strip on the substrate 25 having different process conditions. The ceramic disk 24 also has an embedded heater to heat the substrate 25. The heater includes a plurality of heater coils 50 embedded in the ceramic disk 24,

5 2, for example, the first heater coil 50 and the second heater coil 52. The center of the substrate receiving surface 26 of the ceramic disk 24 and the temperature at the peripheral heating zones 42a, 42b can be controlled by the heater coils 50, 52 which are concentric and radially spaced from one another. In one version, the first heater coil 50 is located at the peripheral portion 54b of the ceramic disk 24, and the second heater coil 52 is located at the central portion 504 of the ceramic disk 24. The first and second heater coils 50, 52 allow for independent control of the temperature of the center and peripheral portions 5 4a, 5 4b of the ceramic disk '24, thereby providing the ability to independently control the temperature of the heating zones 42a, 42b. To achieve different processing rates or characteristics in the radial direction of the processing surface 44 along the substrate 25. Therefore, different temperatures can be maintained in the two heating zones 42a, 42b to affect the temperature of the center and peripheral portions 46a, 46b of the upper substrate 25, thereby resisting the processing of the substrate 25 13 1373810

Any change in gas species distribution or heat load that occurs during the process, such as when the activity at the peripheral portion 46b of the treated surface 44 of the substrate 25 is lower than the gas at the central portion 46b, the periphery is 42b The temperature rises to a higher temperature than the central heating zone 42a, providing a more uniform processing rate or locality from the treated surface 44 of the substrate 25. Figure 8 shows the change in substrate temperature between the percentage of heater power provided by the internal and external heating coils embedded in the suction cup 20. In one arrangement, the first and second heater coils 50, 52 each comprise a loop of electrical resistance heating elements disposed therein and which may even lie in the same plane. For example, the heater coils 50, 52 are each a concentric coil loop that is progressively wound radially in the body of the ceramic disk 24. In one embodiment, the heater includes a coil and has a first coil ring spaced apart from each other and a second coil ring disposed at a distance greater than the first long distance. The second coil ring is disposed around the lift pin hole in the ceramic disk. The heater coils 50, 52 may also be wound coils wound through the shaft of the center of the coil, for example, similar to the lamps disposed in concentric circles of the interior space of the ceramic disk 24. The resistance twist can be composed of different resistive materials such as tungsten or molybdenum. The heater coils 50, 52 have a selected resistance and operating power layer to increase the rate at which the substrate 25 rapidly rises and falls. In one aspect, the heater coils 50, 52 include a sufficiently high resistance to cause the substrate receiving surface 26 of the ceramic 24 to rapidly rise to and maintain a temperature of from about 80 2 50 ° C. In this scheme, the resistance of the coil is from about 4 to about 1 2 . The gas-hot zone of the example is in the context of the physical and continuous continuous to the first porcelain circle along the wire, element level, medium, disc to about Ohm 14 1373810

(ohm). In one embodiment, the resistance i Ohm of the first heater coil 50 and the internal resistance of the second heater coil 52 are 8.5 Ohm. In his embodiment, the first and second heater coils comprise a total resistance of less than 10. In one embodiment, the heater includes 8.50 hm of power to power the winding coils 50, 52 by extending the individual terminals 58 a-d of the ceramic disk 24. In combination with the heater coils 50, 52, the pressure of the heat transfer gas can also be controlled in the two heating zones 42b to provide a more uniform base rate on the substrate 25. For example, two heating zones 42a, 42b can be set to accommodate the heat transfer gases at different equilibrium pressures to provide different heat transfer rates from the base back 34. This can be accomplished by providing a different temperature of heat through the two gas conduits 38a, 38b, respectively, to exit at two different locations on the substrate surface 26. The back side 28 of the ceramic disk 24 can have a divided mesa 30 (mesa) as shown in Fig. 3. In one embodiment, the mesas 30 are cylindrical protrusions that are separated from one another by a gap 3 2 . In the application, 3 2 is filled with a gas such as air to adjust the heat transfer rate from the back surface to the lower surface. In one embodiment, the table top 30 includes a cylindrical projection extending upwardly from the back, which may even be shaped as a post having a rectangular or circular cross-sectional shape. The height of the table top 30 may be from 10 to about 50 microns, and the diameter of the table top 30 may be from about 50,000 to about 50,000. However, the table top 30 may have other shapes and sizes, for example, a rectangular block. Or even bumps of different sizes. In one scheme, the beads have a suitably small bead size (e.g., tens of microns) and the beads are 6.5 at their Ohm resistance. The heater 42a, the material is made to pass the gas to the material 25 to take over a plurality of gaps from the base surface 28 pillars from about i meters. Cone or , Lee treatment 15 1373810

The back side 28 is (bead blasted) to form the mesas 30, and the material of the back side 28 is etched away by the invading party to form a gap 30 formed with a gap therebetween. The electrostatic chuck 20 can also include optical temperature sensors 60a, b that pass through holes 62a, b in the ceramic disk 24 to contact and accurately measure the temperature of the center and peripheral portions 46a, b of the substrate 25. The first sensing 60a is located at the central heating zone 42a of the ceramic disk 24 to read the temperature of the substrate central portion 46a, and the second sensor 60b is located at the peripheral heating zone 42b of the ceramic circle 24 to read accordingly The temperature of the peripheral portion 46b of the substrate 25 is taken. The optical temperature sensors 60a, b are located in the suction cup 20 such that the tips 64a, b of the sensors 60a, b and the substrate attachment surface 26 of the ceramic disk 24 lie in the same plane so that the sensor tips 64a, b can The back side 34 of the substrate 25 held on the suction cup 20 is contacted. The struts 66a, b of the sensor 60a extend vertically through the body of the ceramic disk 24. In one embodiment, as shown in FIG. 5, each optical temperature sensor 60 includes a thermal sensor probe 68 that includes a dome-shaped top portion 74 that is shaped to have a wall 72 and as a tip end 64. The closed cylinder of copper 7 0. The copper cap 70 can be composed of an oxygen-free copper material. The phosphorus-containing plug 7 6 is internally provided and is in direct contact with the top 74 of the copper cap 70. The phosphorus-containing plugs 76 embedded in the caps 70 provide a faster and more sensitive thermal response to the thermal sensing probes 68. The tip end 64 of the copper cap 70 is a dome-shaped top portion 74 to allow repeated contact with different substrates 25 without eroding or damaging the substrate 25. The copper cap 70 has a recess 78 for receiving the epoxy resin 79. To fix the copper cap in the sensor probe 68. The method of the 25th part of the method » bearing, b measuring side cap embedded copper feeling Xu 〇 16 70 1373810

The phosphorus-containing plug 76 converts heat in the form of infrared radiation into a light 1 photon system through the optical fiber bundle 80. The optical fiber bundle 80 may be composed of boron salt glass fibers. The sleeve 82 encloses the bundle of optical fibers 80, while the spacers 84 partially surround the sleeve 82, which is used to thermally insulate both the sense of temperature from the base supporting the ceramic disc. The sleeve 82 can be a tube to provide better thermal insulation from the surrounding construction, but can also be made of, for example, metal. The isolator 84 can be composed of PEEK (polyetheretherketone) and can also be constructed of Teflon® (polytetrafluoroethylene) manufactured by Dupont de Nemours, Delaware. The substrate support member 90 including the electrostatic chuck 20 is fixed to a cooling seat 91 for supporting and fixing the suction holder 20 but the suction holder 20 (Figs. 4A and 4B). The base 91 includes a metal body 92 having a surface 94 having a suction receiving portion and a peripheral portion 98. The suction receiving portion 96 of the top surface 94 is for the back side 28 of the ceramic disk 24 of the electrostatic chuck 20. The circumference 98 of the base 91 extends radially outward beyond the ceramic discs 24. The base 9 1 side portion 98 can be used to receive a clamp ring 100 that is secured to the top surface 94 of the peripheral portion 98 of the base 91. The base 91 is a main body 92 having a plurality of passages 102 that open from a lower surface of the base 91 to a top surface 94 of the base 91, for example, a gas conduit 38a for receiving a terminal or supplying gas to the ceramic disk 24, The base 91 in b has a coolant 110 including an inlet 95 and a terminal 97 to circulate the coolant through the passage 110. As shown in Fig. 4B, when the cooling passage 110 is wound back into a loop toward itself, L, and the tantalum acid temperature gauge is glass-copper, and the bottom of the preparation is cold and has a top. The gold 1 04 8 ad 〇 channel diagram of the system can be 17 1373810

The inlet 95 and the terminal 97 of the cooling passage 110 are disposed adjacent to each other. The coolant can be a fluid such as water or other suitable heat transfer fluid that is maintained at a predetermined temperature in the chiller and is pumped through the passage of the base 91. A base 91 having a circulating cooling fluid can act as a heat exchanger to control the temperature of the suction cup 20 such that the treated surface 44 of the substrate 25 reaches a desired temperature. The fluid flowing through the channel 110 can be heated or cooled to raise or lower the temperature of the aspiration seat 20 and the temperature of the substrate 25 on the suction pad 20. In one embodiment, the channel 110 is shaped and sized to allow fluid to pass therethrough to maintain the temperature of the base 91 at about 0 to 120 °C.

The suction receiving portion 96 of the top surface 94 of the base 91 includes one or more recesses 1 0 8 a, 1 0 8 b to hold air through and through the back surface of the ceramic disc 2 4 " The suction receiving portion 96 includes peripheral grooves 108a > cooperating with a plurality of mesas 30 located on the back surface 28 of the ceramic disk 24 to control the rate of heat transfer from the peripheral portion 54b of the ceramic disk 24. In another embodiment, the suction receiving surface of the base includes a peripheral groove to retain air around the back surface of the ceramic disk. In another embodiment, the combination of the central recess 1 0 8 b and the peripheral recess 10 8 a is utilized to adjust the heat transfer wheel from the central portion 5.4a of the ceramic disk 24. The grooves 108a, 108b in the top surface 94 of the base 91 cooperate with the land 30 on the back side 28 of the ceramic disk 24 to further adjust the temperature on the substrate processing surface 44. The mesas 30 on the back side 28 of the ceramic disk 24 are distributed over the back surface 28 in a uniform or non-uniform pattern. The shape, size and spacing of the mesas 30 are the total amount of contact surface between the console face 30 and the top surface 94 of the base 9 1 to control the total heat transfer area of the interface. When the countertop 18 1373810

The gaps 3 2 for indicating the distance between the mesas 30 remain substantially the same when arranged in a uniform interval pattern, and the gaps 32 2 on the surface 28 are different when arranged at non-uniform intervals. Alternatively, as shown in FIG. 3, the back side of the ceramic disk 24 may have a first array 39 of stages 30 adjacent the inlet 95 of the coolant passages 110 in the base, and an inlet 95 remote from the channel 110. Or even the second array 41 of the second array 4 mesas 30 of the adjacent mesas 30 of the terminal 97 of the coolant passage 110 has a different gap distance from the map forming the first array 39, thereby adjusting the coolant passage 1 1 〇 The rate of heat transfer in adjacent or far surrounding areas. For example, a ceramic disk located above a portion of the coolant passage 110 that receives the freshly cooled passage inlet 95 is typically maintained at a lower temperature than the ceramic disc 24 located above a portion of the coolant passage 110 near the end of the passage. This is because as the coolant passes through the passage in the base, it heats itself by obtaining heat from the ceramic disk 24. Therefore, for the substrate 25 placed on the receiving surface of the ceramic disk 24, it has a higher temperature temperature distribution in a region above the cooling channel terminal 97 than in the region above the inlet 95. A first array 39 of stages 30 spaced apart by a first gap distance is provided around the channel 1 1 0 inlet 9 5 and is provided around the terminal end 97 of the channel 110 at a second gap distance that is the same as the first gap distance. The array 4 1 of the mesas 30 is compensated for this temperature distribution. When the first distance is greater than two distances, the heat transfer rate from the portion of the substrate 25 directly above the first array 39 is lower than the rate of heat transfer from the portion of the substrate directly above the second array 41. Therefore, the heat transfer rate from the first substrate region is away from the 28-side and [0 spacer agent 24 through its 26 pairs of borrowing surfaces not lower than 25 lower 19 1373810 from the heat transfer rate from the second substrate region, which results in The temperature of the first zone becomes higher than the second zone, thereby compensating and balancing the temperature distribution that would occur on the substrate surface 44 of the coolant passage inlet 95 and the terminal 97. In one embodiment, the first arrays 39 of mesas 30 are separated by a first distance of at least about 5 m, while the second array 41 of mesas 30 is separated by a second distance of less than about 3 mm.

By varying the size of the contact area of the first array 39 of mesas 30 relative to the size of the contact area of the second array 41 of mesas 30, the same temperature profile control can be obtained. For example, the first dimension of the contact area of the first array 39 of mesas 30 can be less than about 2000 microns, and the contact area of the second array 41 of mesas 30 can be at least about 3000 microns. The first and second dimensions may be the diameter of the mesas 30 comprising a cylindrical shape. In one embodiment, the first dimension is a diameter of 1000 microns and the second dimension is a diameter of 4000 microns. The smaller the contact area, the higher the temperature on the substrate treated surface 44. Additionally, air is provided between the table top 30 and the back side 28 to serve as another temperature regulator.

Another factor affecting the ability of the substrate to rapidly rise and fall is the nature of the thermal interface between the Tauman disk 24 and the base 91. The preferred system at the interface has better thermal conductivity, thereby allowing the coolant flowing through the base 9 to easily remove heat from the ceramic disk 24. In addition, the interface is preferably compliant because the high temperature difference between the ceramic disc 24 and the coolant base 91 causes thermal expansion stress which will cause cracking or other damage to the ceramic disc 24. Thermal stress. In one embodiment, the back side of the ceramic disk 24 is bonded to the front side of the base 91 by means of a buffer layer. Manufacturing 20 1373810

The buffer layer provides good thermal conductivity while still having a sufficiently high thermal stress absorption. In one embodiment, the crucible of aluminum fibers is included in the buffer layer. The tantalum material has good cushioning power and simultaneous thermal conductivity. The use of embedded aluminum fibers improves the material properties of the crucible. In another embodiment, the buffer layer comprises a metal screen acid embedded therein. In addition, the acrylic polymer is selected to accommodate thermal stresses, and the incoming wire mesh improves the thermal conductivity of the structure. The base 91 also includes an electrical connector assembly 120 for conducting power to the electrostatic chuck 2036. The electrical connector assembly 120 includes a ceramic 1 24. The ceramic insulating sleeve 1 24 can be, for example, alumina. A plurality of wires are provided in the ceramic insulating sleeve 124. The wiring ports 58, 58a-b provide the electrodes 36 and heater coils 50, 52 of the battery holder 20. For example, 58 can include a copper post. The ring assembly 170 can also be provided to reduce the formation of the article on the peripheral region including the substrate support 90 from the base 9 of the electrosump 20 and to protect it from erosion. The ring assembly 170 includes a retaining ring that is secured to the peripheral portion 98 of the top surface 94 of the seat 91 by a securing means such as a screw or bolt (not shown). The retaining ring 100 has a lip extending radially inwardly, and the top surface 174 and the outer side d lip 172 have a lower surface 173 disposed on the step 31 of the peripheral projection 29 of the ceramic disk 24 to The ceramic disc 24, the top and outer surfaces 176 form a hermetic seal. In one version, the following table includes polymer layer 179, including, for example, polyimine to form a good seal. The fixing ring 100 is made of a material that can resist the erosion of the plasma, and the electrode insulating sleeve L 58 with the suitable heat conduction of the propylene is embedded in the statically deposited pillar 100. 1 176 > the first side of the 174 face 173 good gas, such as 21 1373810

The conduit of the mass flow controller) is 2 0 3 to pass the gas having the set flow rate. The conduit 203 supplies gas to a mixing manifold (not shown) where the gas systems mix to form the desired process gas composition. The tube is supplied to a gas distributor 162, and the gas distributor 162 is provided with a gas outlet in the chamber. The gas outlet may pass through the chamber sidewall 128 at the periphery of the substrate support 20 or through the top wall 130 above the final material 25. The used process gases and by-products are discharged from the chamber 106 by a row 210 that includes an exhaust port 211 that receives the used process gas and that is in the gas exhaust conduit, where There is a throttle valve in the exhaust conduit that controls the chamber 106. The exhaust conduit connection one or more exhaust pumps 218 system 210 may also include an effluent treatment system (not shown) to weakly undesirably present gases. The process gas is excited by gas igniter 208 to process process gas "excited process gas" in process gas region 208 coupling energy to chamber 106 in a remote region (not shown) upstream of chamber 106. By means of a process gas system that activates or excites one or more dissociated gaseous species', non-dissociated gaseous species, bulk matter and neutral gaseous species. In one embodiment, the gas excitation includes an antenna 186 that includes one or more sensing lines that are circularly symmetrical about the center of the chamber 106. Typically, 1 86 includes a solenoid having from about 1 to about 20 turns extending through a central axis along which the longitudinal vertical axis of the process chamber 106 conforms. The conduit is suitably configured to provide a strong inductive flux connection and terminate with the coupling body from the mixing chamber 106 to terminate the air pressure in the base system or the plurality of bodies. Exhaust emissions are reduced by 25, the medium, or the body. The ionizer 208 I 188 is formed, and the antenna has a selection screw to process 23 1373810 gas. When the antenna 186 is disposed at the top wall 130 of the adjacent chamber 106, an adjacent portion of the top wall 130 may be made of a dielectric material such as cerium oxide, which may cause radio frequency (RF) fields or electromagnetic fields to pass through. through. Antenna 186 is powered by an antenna current source (not shown) and the applied power is adjusted by RF matching network 126. For example, the antenna current source provides RF power to the antenna 186 at a frequency of from about 50 KHz to about 60 MHz, or more typically at about 1 3.56 MHz; and the power level is about 100 to about 5000 watts.

When antenna 186 is used in chamber 106, wall 118 includes a top wall 130 that is made of an inductive field permeable material such as alumina or ceria to allow inductive energy from antenna 186 to penetrate wall 118 or Top wall 130. Suitable semiconductor materials are doped ruthenium. For the top surface of the doped germanium semiconductor, the temperature of the top wall 130 is preferably maintained within a range in which the material has semiconductor characteristics, wherein the concentration of the carrier electrons is completely relative to the temperature system. The ground is kept constant. For doped germanium, the temperature range can be from about 1000 K (below this temperature, the germanium begins to have dielectric properties) to about 600 K (above this temperature, germanium begins to have metallic conductor properties).

In one embodiment, the gas energizer 2 0 8 can also be a pair of electrodes (not shown) that are capacitively coupled to provide electropolymerization initiation energy to the process gas or to transfer kinetic energy to the excited state gaseous species. Typically, one electrode is located in the support 90 below the substrate 25 and the other electrode is a wall, such as the sidewall 1 28 or the top wall 130 of the chamber 106. For example, the electrode can be a top wall 130 made of a semiconductor that is sufficiently electrically conductive to bias or ground it to form an electric field in the chamber 106 while simultaneously emitting an RF induced field from the antenna 186 located above the top wall 130. Provide low impedance. Suitable semiconductors are included at room temperature 24 1373810

300 can include a computer comprising: (1) a central processing unit (eg, a conventional microprocessor from INTEL, which is coupled to a memory, including: a removable storage medium (eg, a CD player), and Mobile storage media, such as hard disk drives, ROMs, and dedicated circuits (ASICs) designed and pre-programmed for specific tasks, such as taking data and other information from the chamber 106 to operate specific chamber components; Iii) interface panels for specific signaling services, including: analog and digital input and output boards, boards and motor controller boards. For example, the controller interface panel can be used to signal the process monitor and provide data signals. To the CPU. With auxiliary circuitry including, for example, an auxiliary processor, a clock buffer, a power supply, and other meta-execution processes known to be connected to the CPU, the RAM can be used to store a software instruction set that executes the software of the present invention. The (instruction set) is usually stored in the store, and when it is executed by the CPU, the code instruction set is adjusted in the RAM for temporary storage. Between the operator and the controller 300 The user interface is for a display and a data input device such as a keyboard or a light pen. For a particular screen or function, the operator inputs the data input device and can view the selection on the display. The controller 300 can receive and evaluate the value. The (eva 1 uate ) signal is sent to the factory automation host. The factory automation host includes the program. The main software program calculates data from different systems, platforms or chambers and multiple batches of substrates 25 or over an extended period of time. Process control parameters, (i) system CPU executed on the substrate), memory connection or soft screw RAM; integrated body power, or processing interface information from the computer return, express. In. The present storage medium can be selected by selecting the data of the main software 106 to determine such as έ; (ii) 26 1373810

The property that varies with statistical relationships on a single substrate; or (iii) the property of the material as a function of statistical relationship. The main software program can also be used for ongoing in-situ process estimation or main software programs for controlling other processes, including the WORKSTREAMTM software program available from Applied Materials, Inc. above. The host can also be used to provide command signals to (i) shift the particular substrate 25 from the sequence, for example, if the property is unacceptable or not within a statistically determined range of values, or if the number deviates from an acceptable range. (ii) Terminating in a particular chamber 106 (iii) determining the unsuitable substrate 25 characteristics or process conditioning process conditions. The factory automation host can also signal at the beginning or end of the substrate etch process corresponding to the data from the main software. In one embodiment, controller 300 includes computer readable and can be stored in memory, such as on a non-removable or removable storage medium. The computer program generally includes a control software that includes a device for operating the chamber 106 and its part code; a process monitoring software for monitoring the software system in the chamber 106; and other control software. The computer program can be written in the traditional programming language of the assembly language 'C + + 'Pascal i. The code is entered into a single file or multiple files using a conventional text editor and stored on a memory medium that can be used on a computer. If the program is entered in a higher-order language, the code is compiled, and the resulting code is used in a single batch of base data. Appliced (applied factory automatic substrate special process engraving process engraved money, or a few times, the program is estimated to provide instructions for the computer program storage media: the process of the program - the process; any such as ^ Fortran will be suitable Or include the code text as the translation code 27 1373810 and the target daima of the pre-compiled library routine. In order to execute the connected, compiled object code, the user calls the object code to make the CPU read And execute the code to execute the tasks identified in the program.

For example, in an operation using a data input device, a user inputs a process setting and a chamber number into a computer program based on a menu or screen generated by a process selector on the display. The computer program includes an instruction set for controlling substrate position, airflow, air pressure, temperature, RF power level, and other parameters of a particular process, as well as a set of instructions for monitoring the process chamber. The process is set to the set of preset process parameters necessary to perform a specific process. Process parameters are process conditions including, but not limited to, gas composition, gas flow rate, temperature, pressure, and gas trigger settings (such as RF or microwave power levels). When there is a set of interconnected chambers on the platform, the chamber number indicates the identity of the particular chamber.

The sequencer includes a set of instructions for receiving chamber labels and process parameter sets from a computer program or process selector and for controlling its operation. The process sequencer begins execution of the process settings by passing specific process parameters to the chamber manager that controls the plurality of tasks in the chamber 106. The chamber manager can include a set of instructions such as a substrate positioning instruction set, an airflow control instruction set, a pneumatic control instruction set, a temperature control instruction set, a gas trigger control instruction set, and a process monitoring instruction set. Although each instruction set is described as a separate instruction set for performing a set of tasks, each instruction set may be integrated with each other or may be overlapping; therefore, the chamber controller 300 and the computer readable program described herein are not It should be limited to the specific scheme of the functional routines described herein. The substrate positioning instruction set includes code for controlling the chamber components, and 28 1373810 is for placing the substrate 25 on the substrate support 90 and, optionally, the base in the chamber The material 25 is raised and lowered to the desired height. For example, the substrate positioning instruction set can include: a code for operating a transfer robot (not shown) that transfers the substrate into the chamber; a program for controlling the lift pins (not shown) a code that extends through a hole in the electrostatic chuck; and a code for coordinating movement of the robot arm and movement of the lift pin.

The code further includes a temperature control command set that is set and controlled for maintenance by, for example, applying different power levels independently to the first and second heater coils 50, 52 in the ceramic disk 24 of the suction cup 20. The temperature in different regions of the substrate 25. The temperature control command set also regulates the heat transfer flow through the gas conduits 38a, 38b.

The temperature control command set also includes code for controlling the temperature and flow rate of the coolant fluid passing through the coolant passage 110 of the base 9 1 . In one embodiment, the temperature control command set includes a code for immediately starting the coolant temperature in the cooler for at least about one second before the power level applied to the heater rises. The lower value rises to a higher value. This allows the higher temperature coolant to circulate in the coolant passage of the base 9 1 before the heater heats up to reduce the amount of heat flowing from the ceramic disk 24 into the base 91 when the heater eventually heats up, thereby effectively increasing the base. The rate at which the temperature of the material rises. Conversely, the code includes a set of instructions to reduce the temperature of the coolant, such as at least reducing the coolant by 10 ° C and lowering the cooler to a lower value before the power level applied to the heater drops to the substrate temperature. Speed up the transfer of heat from the substrate as it descends. The temperature and time of the song in Figure 7 29 1373810

These may include, for example, a roll for controlling the temperature of the substrate 25 during etching or a code for controlling the temperature of the wall of the chamber 106 (such as a controlled temperature). The gas trigger control command set includes, for example, a code for setting the RF power level of the electrode or antenna 186. Although described as a separate instruction set for performing a set of tasks, it should be understood that each instruction set can be integrated with each other, or that one set of code is integrated with another set of coded tasks to perform the required tasks, as described herein. The controller 300 and the computer program should not be limited to the specific embodiment of the functional routine; and the execution of the equivalent functional group arbitrary routine or combined code is also included in the scope of the present invention, although the controller refers to the chamber. The embodiment of 106 is described as yet applicable to any of the chambers described herein. The apparatus and process of the present invention have the advantage of allowing the substrate temperature to change very rapidly between different processing steps on the substrate and chamber. This rapid temperature change allows for an increase in the speed at which a plurality of steps can be performed. The system of the present invention is also capable of accurately tailoring the form of temperature rise and fall required for the process, such as an etch process in an etch phase, which is required to etch different layers or layers on the substrate. Another advantage is that the apparatus of the present invention allows the substrate to be maintained at a temperature significantly above the coolant base, while allowing for higher power to be applied to the substrate without any substrate temperature drift. The large temperature between the substrate and the coolant base has a good temperature difference between the inner and outer regions of the substrate, resulting in varying annular process conditions on the surface of the material. The code, the top wall is applied, but the task can be grouped. Others as described in the text. In addition, the temperature difference between the temperature and the process of the material which is performed by the bright etching process is also allowed to compensate the base 31 1373810. Although the present invention is described in detail with reference to preferred embodiments thereof, other embodiments are also feasible. of. For example, not limited to the description herein, device components such as substrate supports, coolant bases, and temperature sensors can be used in other chambers and other processes. Therefore, the scope of the appended claims should not be limited to the description of the preferred embodiments included herein. [Simple description of the map]

The features, embodiments, and advantages of the present invention will be more readily understood from the description of the appended claims. However, it should be understood that the various features employed in the present invention are not limited to the specific drawings, and the present invention includes any combination of these features, wherein: Figure 1 is an implementation of a substrate chamber having an electrostatic chuck. 2 is a schematic cross-sectional side view of an embodiment of an electrostatic chuck; FIG. 3 is a schematic bottom view of the electrostatic chuck of FIG. 1;

4A and 4B are a schematic top perspective view (Fig. 4A) and a bottom perspective view (Fig. 4B) of one embodiment of a base for an electrostatic chuck; Fig. 5 is an optical temperature sensor Figure 6A is a schematic cross-sectional side view of the ring assembly on the electrostatic chuck in Figures 4A and 4B, and Figure 6B is a partial schematic view of the ring assembly of Figure 6A; Figure 7 is a depiction Schematic diagram of substrate temperature change over a time interval using a cooler at a constant temperature; 32 1373810 Figure 8 is a graph depicting the temperature difference between the electrostatic chuck and the cooler as a function of heater power percentage; Figure 9 is a graph depicting the temperature change of the electrostatic chuck. [Main component symbol description]

20 Suction seat 24 Disc 25 Substrate 26 Surface 28 Back 29 Projection 30 Countertop 32 Gap 3 1,33 Step 34 Back 36 Electrode 3 8 a,b Conduit 39,41 Array 40a,b 埠42a,b Heating zone 44 Surface 46a,b part 50,52 heater coil 54a,b part 58 terminal 5 8 a~d terminal 6 0 a, b sensor 6 2 a, b hole 64a, b tip 66a, b strut 68 probe 70 Copper cap 72 Side wall 74 Top 76 Plug 78 Groove 79 Epoxy 80 Optical fiber bundle 82 Sleeve 84 Isolation sleeve 90 Support 91 Base 92 Main body 94 Top surface 95 Entrance 33

Claims (1)

1373810 : Invention patent specification » y (The format, order and bold characters of this manual, please do not change it at will, please do not fill in the ※ part number) ※Application number: 95143406 ※Application date: November 23, 2011 1 PC classification: I. Name of the invention: (Chinese literature) ^1L^, ^7,^0 Substrate treatment for rapid temperature gradient control (2006.01> SUBSTRATE PROCESSING WITH RAPID TEMPERATURE GRADIENT CONTROL • I. Applicant···(1 person in total) Or Name: (Chinese / English) American Business Application Materials Co., Ltd. applied MATERIALS, INC. Representative: (Chinese / English) 邝锦安 KWONG, RAYMOND K. Residence or business address: (Chinese / English) California, California 3050 Boer's Avenue, Greater Crawola® 3050 Bowers Avenue, Santa Clara, CA 95054, USA Nationality: (Chinese/English) • United States/USA / I III. Inventor: (Total 5) Name: (Chinese /English) 1. Ma You Xi Jin Ya Li Shan / MATYOSHKIN, ALEXANDER 2. Kazdan / KATZ, DAN 3. Holborn John / HOLLAND, JOHN 4. Sodolos Panagotos / P ANAGOPOULOS, THEODOROS 1373810 5. Wilhelm Michael D/WELLWERTH, MICHAEL D. Nationality: (Chinese/English) 1. Israel/ISRAEL 2. USA/USA 3. USA/USA 4. Greece/GREECE 5. USA/ USA IV. Declarations: □ Proposal for the facts as stipulated in the second paragraph or the second paragraph of Article 22, Paragraph 2 of the Patent Law, the date of which is: Year Month. 3 Before applying, apply for patents from the following countries (regions): [Format please follow: order of application country (region), application date' application case number] XI has the first international priority of Article 27 of the Patent Law: United States; July 20, 2006; 60/832,545] No claim for patent law Article 27, first international priority: □ Patent law, Article 19, first domestic priority: [format please : Application 曰, application case number note] □ Proposal for patent law Article 30 Biological materials: Those who need to deposit biological materials: Domestic biological materials [format please note: order of depository, date, number order] Foreign biological materials [format please: host country, institution, 曰Period, number order note] G does not need to deposit biomaterials: When there is general knowledge in the technical field, it is not easy to obtain 1373810 5. Wilhelm Michael D/WELLWERTH, MICHAEL D. Nationality: (Chinese / English) 1. Israel/ISRAEL 2. USA/USA 3. USA/USA 4. Greece/GREECE 5. USA/USA IV. Declaration: □ Proposal for the facts as stipulated in the second paragraph or the second paragraph of Article 22, Paragraph 2 of the Patent Law, the date of which is: Year Month. 3 Before applying, apply for patents from the following countries (regions): [Format please follow: order of application country (region), application date' application case number] XI has the first international priority of Article 27 of the Patent Law: United States; July 20, 2006; 60/832,545] No claim for patent law Article 27, first international priority: □ Patent law, Article 19, first domestic priority: [format please : Application 曰, application case number note] □ Proposal for patent law Article 30 Biological materials: Those who need to deposit biological materials: Domestic biological materials [format please note: order of depository, date, number order] Foreign biological materials [format please: host country, institution, 曰Period, number order note] G does not need to deposit biomaterials: When there is general knowledge in the technical field, it is easy to obtain, no need to register