JP7429208B2 - ウエハ載置台 - Google Patents
ウエハ載置台 Download PDFInfo
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- JP7429208B2 JP7429208B2 JP2021132887A JP2021132887A JP7429208B2 JP 7429208 B2 JP7429208 B2 JP 7429208B2 JP 2021132887 A JP2021132887 A JP 2021132887A JP 2021132887 A JP2021132887 A JP 2021132887A JP 7429208 B2 JP7429208 B2 JP 7429208B2
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- base material
- cooling base
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- 239000000463 material Substances 0.000 claims description 190
- 238000001816 cooling Methods 0.000 claims description 141
- 239000003507 refrigerant Substances 0.000 claims description 112
- 239000000919 ceramic Substances 0.000 claims description 72
- 229910052751 metal Inorganic materials 0.000 claims description 57
- 239000002184 metal Substances 0.000 claims description 57
- 238000012546 transfer Methods 0.000 claims description 30
- 239000002826 coolant Substances 0.000 claims description 28
- 229920005989 resin Polymers 0.000 claims description 16
- 239000011347 resin Substances 0.000 claims description 16
- 125000006850 spacer group Chemical group 0.000 claims description 6
- 239000002023 wood Substances 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 111
- 239000007789 gas Substances 0.000 description 77
- 239000010410 layer Substances 0.000 description 68
- 238000004891 communication Methods 0.000 description 27
- 238000009434 installation Methods 0.000 description 22
- 238000000034 method Methods 0.000 description 21
- 238000001179 sorption measurement Methods 0.000 description 15
- 229910010271 silicon carbide Inorganic materials 0.000 description 8
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 8
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 6
- 239000004020 conductor Substances 0.000 description 6
- 230000002093 peripheral effect Effects 0.000 description 6
- 239000000843 powder Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 239000002994 raw material Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 229910000962 AlSiC Inorganic materials 0.000 description 3
- 238000009529 body temperature measurement Methods 0.000 description 3
- 238000005266 casting Methods 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 239000011156 metal matrix composite Substances 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000002002 slurry Substances 0.000 description 3
- 239000002003 electrode paste Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 230000004043 responsiveness Effects 0.000 description 2
- 229910018566 Al—Si—Mg Inorganic materials 0.000 description 1
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000012948 isocyanate Substances 0.000 description 1
- 150000002513 isocyanates Chemical class 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000002905 metal composite material Substances 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 229920005862 polyol Polymers 0.000 description 1
- 150000003077 polyols Chemical class 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000007751 thermal spraying Methods 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32642—Focus rings
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
- H01J37/32724—Temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/002—Cooling arrangements
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Drying Of Semiconductors (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Description
ウエハ載置面を有し、静電電極とヒータ電極とを内蔵するセラミック基材と、
前記セラミック基材のうち前記ウエハ載置面とは反対側の面に金属接合層を介して接合され、第1冷媒の供給及び供給停止を切り替え可能な第1冷媒流路を有し、金属を含有する第1冷却基材と、
前記第1冷却基材のうち前記金属接合層とは反対側の面に、伝熱ガスを供給可能なスペース層を介して取り付けられ、第2冷媒の供給及び供給停止を切り替え可能な第2冷媒流路を有し、金属を含有する第2冷却基材と、
を備えたものである。
Claims (8)
- ウエハ載置面を有し、静電電極とヒータ電極とを内蔵するセラミック基材と、
前記セラミック基材のうち前記ウエハ載置面とは反対側の面に金属接合層を介して接合され、第1冷媒の供給及び供給停止を切り替え可能な第1冷媒流路を有する第1冷却基材と、
前記第1冷却基材のうち前記金属接合層とは反対側の面に、伝熱ガスを供給可能なスペース層を介して取り付けられ、第2冷媒の供給及び供給停止を切り替え可能な第2冷媒流路を有する第2冷却基材と、
を備えたウエハ載置台。 - 前記第1及び第2冷却基材の少なくとも一方は、プラズマ発生用電極を兼ねる、
請求項1に記載のウエハ載置台。 - 前記セラミック基材と前記第1冷却基材との熱膨張係数差は1×10-6/K以下である、
請求項1又は2に記載のウエハ載置台。 - 前記スペース層の厚さは、0.05mm以上2mm以下である、
請求項1~3のいずれか1項に記載のウエハ載置台。 - 前記スペース層は、前記第1冷却基材と前記第2冷却基材との間に配置されたシールリングによって区画されている、
請求項1~4のいずれか1項に記載のウエハ載置台。 - 前記シールリングは、金属リング及び樹脂リングを併用したものである、
請求項5に記載のウエハ載置台。 - 前記スペース層には、前記スペース層の厚みを規制するスペーサが設けられている、
請求項5又は6に記載のウエハ載置台。 - 前記第1冷媒流路は、前記第2冷媒流路に比べて、断面積が小さく流路長が長い、
請求項1~7のいずれか1項に記載のウエハ載置台。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2021132887A JP7429208B2 (ja) | 2021-08-17 | 2021-08-17 | ウエハ載置台 |
KR1020220087522A KR20230026258A (ko) | 2021-08-17 | 2022-07-15 | 웨이퍼 배치대 |
US17/813,051 US20230055928A1 (en) | 2021-08-17 | 2022-07-18 | Wafer placement table |
CN202210872589.9A CN115705986A (zh) | 2021-08-17 | 2022-07-19 | 晶片载置台 |
TW111127905A TWI822204B (zh) | 2021-08-17 | 2022-07-26 | 晶圓放置座 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2021132887A JP7429208B2 (ja) | 2021-08-17 | 2021-08-17 | ウエハ載置台 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2023027641A JP2023027641A (ja) | 2023-03-02 |
JP7429208B2 true JP7429208B2 (ja) | 2024-02-07 |
Family
ID=85180738
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2021132887A Active JP7429208B2 (ja) | 2021-08-17 | 2021-08-17 | ウエハ載置台 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20230055928A1 (ja) |
JP (1) | JP7429208B2 (ja) |
KR (1) | KR20230026258A (ja) |
CN (1) | CN115705986A (ja) |
TW (1) | TWI822204B (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2022094023A (ja) * | 2020-12-14 | 2022-06-24 | 東京エレクトロン株式会社 | プラズマ処理装置 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006261541A (ja) | 2005-03-18 | 2006-09-28 | Tokyo Electron Ltd | 基板載置台、基板処理装置および基板処理方法 |
JP2011192661A (ja) | 2009-03-03 | 2011-09-29 | Tokyo Electron Ltd | 載置台構造、成膜装置及び原料回収方法 |
JP2015035447A (ja) | 2013-08-07 | 2015-02-19 | 日本特殊陶業株式会社 | 静電チャック |
JP2017178663A (ja) | 2016-03-30 | 2017-10-05 | 住友大阪セメント株式会社 | 静電チャック装置 |
WO2020054682A1 (ja) | 2018-09-13 | 2020-03-19 | 日本碍子株式会社 | ウエハ載置装置 |
JP2020145238A (ja) | 2019-03-04 | 2020-09-10 | 日本碍子株式会社 | ウエハ載置装置 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6541565B2 (ja) | 2015-09-25 | 2019-07-10 | 東京エレクトロン株式会社 | 載置台及びプラズマ処理装置 |
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2021
- 2021-08-17 JP JP2021132887A patent/JP7429208B2/ja active Active
-
2022
- 2022-07-15 KR KR1020220087522A patent/KR20230026258A/ko not_active Application Discontinuation
- 2022-07-18 US US17/813,051 patent/US20230055928A1/en active Pending
- 2022-07-19 CN CN202210872589.9A patent/CN115705986A/zh active Pending
- 2022-07-26 TW TW111127905A patent/TWI822204B/zh active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006261541A (ja) | 2005-03-18 | 2006-09-28 | Tokyo Electron Ltd | 基板載置台、基板処理装置および基板処理方法 |
JP2011192661A (ja) | 2009-03-03 | 2011-09-29 | Tokyo Electron Ltd | 載置台構造、成膜装置及び原料回収方法 |
JP2015035447A (ja) | 2013-08-07 | 2015-02-19 | 日本特殊陶業株式会社 | 静電チャック |
JP2017178663A (ja) | 2016-03-30 | 2017-10-05 | 住友大阪セメント株式会社 | 静電チャック装置 |
WO2020054682A1 (ja) | 2018-09-13 | 2020-03-19 | 日本碍子株式会社 | ウエハ載置装置 |
JP2020145238A (ja) | 2019-03-04 | 2020-09-10 | 日本碍子株式会社 | ウエハ載置装置 |
Also Published As
Publication number | Publication date |
---|---|
TW202314928A (zh) | 2023-04-01 |
CN115705986A (zh) | 2023-02-17 |
US20230055928A1 (en) | 2023-02-23 |
TWI822204B (zh) | 2023-11-11 |
JP2023027641A (ja) | 2023-03-02 |
KR20230026258A (ko) | 2023-02-24 |
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