JP2020043541A - 固体撮像素子 - Google Patents
固体撮像素子 Download PDFInfo
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- JP2020043541A JP2020043541A JP2018171665A JP2018171665A JP2020043541A JP 2020043541 A JP2020043541 A JP 2020043541A JP 2018171665 A JP2018171665 A JP 2018171665A JP 2018171665 A JP2018171665 A JP 2018171665A JP 2020043541 A JP2020043541 A JP 2020043541A
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- 238000003384 imaging method Methods 0.000 title claims abstract description 49
- 238000005513 bias potential Methods 0.000 claims description 5
- 230000000875 corresponding effect Effects 0.000 description 28
- 230000004048 modification Effects 0.000 description 23
- 238000012986 modification Methods 0.000 description 23
- 238000010586 diagram Methods 0.000 description 15
- 238000009792 diffusion process Methods 0.000 description 11
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000002596 correlated effect Effects 0.000 description 1
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/67—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/50—Control of the SSIS exposure
- H04N25/57—Control of the dynamic range
- H04N25/59—Control of the dynamic range by controlling the amount of charge storable in the pixel, e.g. modification of the charge conversion ratio of the floating node capacitance
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/67—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response
- H04N25/671—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response for non-uniformity detection or correction
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/701—Line sensors
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
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Abstract
Description
以下、図面を参照して実施形態を説明する。
次に、実施形態に係る固体撮像素子1の作用について説明をする。
実施形態では、出力ノードNcが、画素アレイAの水平方向中央部に設けられるが、これに限定されない。例えば、出力ノードNcは、画素アレイAの水平方向の一方又は他方の部位に設けられてもよい。
実施形態及び変形例1では、ソースフォロア入力ゲートT2と読出しノードNが接続されるが、ソースフォロア入力ゲートT2と読出しノードNの間にスイッチゲートT5を設けてもよい。
Claims (10)
- 受光素子を有する複数の画素と、
前記複数の画素の各々と接続され、前記受光素子によって蓄積された電荷を読み出す複数の読出し回路と、
前記複数の画素のうち、読出し対象となる読出し画素に読出し指示をする制御回路と、
前記読出し画素の前記読出し回路に設けられた第1定電流源と、前記複数の画素のうち、前記読出し画素に対応付けられた対応画素の前記読出し回路に設けられた第2定電流源とを駆動するための駆動指示をする駆動回路と、
を有する、固体撮像素子。 - 前記対応画素は、前記複数の画素のうち、前記読出し画素から一定距離離れた位置において対応付けられ、
前記駆動回路は、前記読出し画素と前記対応画素の対応付け情報を格納する、
請求項1に記載の固体撮像素子。 - 前記第1定電流源及び前記第2定電流源は、前記読出し回路から画素信号を出力する信号出力線によって互いに接続される、請求項1に記載の固体撮像素子。
- 前記信号出力線は、前記画素信号を出力する出力ノードを有し、
前記対応画素は、前記読出し画素との間に形成される電流経路上に前記出力ノードが配置されるように、前記読出し画素に対応付けられる、
請求項3に記載の固体撮像素子。 - 前記出力ノードは、
前記複数の画素の配列方向の中央部に設けられ、
前記出力ノードよりも配列方向の一方側に設けられた前記複数の画素の一部と第1信号線によって接続され、
前記出力ノードよりも配列方向の他方側に設けられた前記複数の画素の他部と第2信号線によって接続される、
請求項4に記載の固体撮像素子。 - 前記出力ノードは、
前記複数の画素の配列方向の一方又は他方の部位に設けられ、
一方から奇数番目に位置する前記複数の画素の一部が第1信号線によって接続され、
一方から偶数番目に位置する前記複数の画素の他部が第2信号線によって接続される、
請求項4に記載の固体撮像素子。 - 前記読出し回路は、前記読出し指示及び前記駆動指示に応じて画素信号を出力する、請求項1に記載の固体撮像素子。
- 前記読出し回路は、前記複数の画素の各々がゲートに接続されたソースフォロア入力ゲートと、前記ソースフォロア入力ゲートと直列になるように接続されたスイッチングトランジスタ及びソースフォロア定電流源トランジスタとを有する、請求項1に記載の固体撮像素子。
- スイッチングトランジスタを有し、
前記スイッチングトランジスタは、前記駆動指示に応じ、前記第1定電流源及び前記第2定電流源と、前記読出し画素とを接続状態にする、
請求項1に記載の固体撮像素子。 - 前記第1定電流源及び前記第2定電流源の各々は、ゲートがバイアス電位と接続されたソースフォロア定電流源トランジスタを有する、請求項1に記載の固体撮像素子。
Priority Applications (3)
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JP2018171665A JP7005459B2 (ja) | 2018-09-13 | 2018-09-13 | 固体撮像素子 |
CN201910113715.0A CN110896455B (zh) | 2018-09-13 | 2019-02-14 | 固体摄像元件 |
US16/276,804 US10848702B2 (en) | 2018-09-13 | 2019-02-15 | Solid-state imaging device |
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JP2018171665A JP7005459B2 (ja) | 2018-09-13 | 2018-09-13 | 固体撮像素子 |
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JP2020043541A true JP2020043541A (ja) | 2020-03-19 |
JP7005459B2 JP7005459B2 (ja) | 2022-01-21 |
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Cited By (1)
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EP3753653A1 (en) | 2019-06-18 | 2020-12-23 | Daido Steel Co., Ltd. | Powder for additive manufacturing, and die-casting die part |
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WO2017179319A1 (ja) * | 2016-04-15 | 2017-10-19 | ソニー株式会社 | 固体撮像素子、電子機器、および、固体撮像素子の制御方法 |
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JP4120453B2 (ja) * | 2003-04-18 | 2008-07-16 | ソニー株式会社 | 固体撮像装置とその駆動制御方法 |
JP4470425B2 (ja) | 2003-09-12 | 2010-06-02 | ソニー株式会社 | 単位信号補正方法および半導体装置、並びに半導体装置の駆動制御方法および駆動制御装置 |
JP5115937B2 (ja) * | 2007-09-05 | 2013-01-09 | 国立大学法人東北大学 | 固体撮像素子及びその製造方法 |
JP2009182405A (ja) | 2008-01-29 | 2009-08-13 | Fujifilm Corp | Ccd型固体撮像素子及びその出力信号補正方法 |
JP4952601B2 (ja) | 2008-02-04 | 2012-06-13 | 日本テキサス・インスツルメンツ株式会社 | 固体撮像装置 |
JP5001970B2 (ja) * | 2009-03-30 | 2012-08-15 | 浜松ホトニクス株式会社 | 固体撮像装置 |
JP5515372B2 (ja) * | 2009-04-02 | 2014-06-11 | 株式会社ニコン | 固体撮像素子 |
JP2010287706A (ja) * | 2009-06-11 | 2010-12-24 | Toshiba Corp | 半導体集積回路装置 |
JP5500007B2 (ja) * | 2010-09-03 | 2014-05-21 | ソニー株式会社 | 固体撮像素子およびカメラシステム |
JP5646420B2 (ja) * | 2011-09-14 | 2014-12-24 | 株式会社東芝 | 固体撮像装置 |
JP2013179979A (ja) | 2012-02-29 | 2013-09-12 | Nidek Co Ltd | 眼底撮影装置 |
JP6137997B2 (ja) | 2012-10-31 | 2017-05-31 | ルネサスエレクトロニクス株式会社 | 固体撮像装置 |
JP5923061B2 (ja) * | 2013-06-20 | 2016-05-24 | キヤノン株式会社 | 固体撮像装置 |
JP2017135693A (ja) * | 2016-01-21 | 2017-08-03 | パナソニックIpマネジメント株式会社 | 撮像装置 |
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WO2017179319A1 (ja) * | 2016-04-15 | 2017-10-19 | ソニー株式会社 | 固体撮像素子、電子機器、および、固体撮像素子の制御方法 |
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EP3753653A1 (en) | 2019-06-18 | 2020-12-23 | Daido Steel Co., Ltd. | Powder for additive manufacturing, and die-casting die part |
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CN110896455B (zh) | 2022-06-21 |
CN110896455A (zh) | 2020-03-20 |
US10848702B2 (en) | 2020-11-24 |
JP7005459B2 (ja) | 2022-01-21 |
US20200092503A1 (en) | 2020-03-19 |
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