JP2020043239A - 半導体装置の製造方法およびエッチングガス - Google Patents
半導体装置の製造方法およびエッチングガス Download PDFInfo
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- 238000005530 etching Methods 0.000 title claims abstract description 43
- 239000004065 semiconductor Substances 0.000 title claims abstract description 31
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 20
- 239000007789 gas Substances 0.000 claims abstract description 100
- 125000001153 fluoro group Chemical group F* 0.000 claims abstract description 27
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims abstract description 25
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 13
- 150000002430 hydrocarbons Chemical class 0.000 claims abstract description 13
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 9
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 7
- 239000001257 hydrogen Substances 0.000 claims abstract description 7
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims abstract description 5
- 239000011737 fluorine Substances 0.000 claims abstract description 5
- 150000001721 carbon Chemical group 0.000 claims abstract description 4
- 125000004432 carbon atom Chemical group C* 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 10
- 230000008030 elimination Effects 0.000 claims description 6
- 238000003379 elimination reaction Methods 0.000 claims description 6
- -1 hydrogen compound Chemical class 0.000 claims description 4
- 230000008569 process Effects 0.000 claims description 4
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 3
- 229910001882 dioxygen Inorganic materials 0.000 claims description 3
- 150000002431 hydrogen Chemical class 0.000 claims 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 1
- 150000002483 hydrogen compounds Chemical class 0.000 claims 1
- 239000010410 layer Substances 0.000 description 100
- 230000001681 protective effect Effects 0.000 description 25
- 238000001312 dry etching Methods 0.000 description 7
- 239000011229 interlayer Substances 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 125000004122 cyclic group Chemical group 0.000 description 3
- 230000008021 deposition Effects 0.000 description 2
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 2
- 229930195733 hydrocarbon Natural products 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
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- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels
- H10B43/23—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
- H10B43/27—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
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Abstract
Description
図1は、第1実施形態の半導体装置の製造方法を示す断面図である。本実施形態の半導体装置については、3次元メモリを一例として説明する。
2c:第2絶縁膜、3:犠牲層、3’:電極層、4:絶縁層、
5:上部層、5a:カバー絶縁膜、5b:ドレイン側導電層、
5c:第1層間絶縁膜、5d:第2層間絶縁膜、6:マスク層、7:保護膜、
11:ブロック絶縁膜、12:電荷蓄積層、13:トンネル絶縁膜、
14:チャネル半導体層、15:コア絶縁膜、16:コンタクトプラグ
Claims (11)
- CxHyFz(Cは炭素、Hは水素、Fはフッ素を表し、xは3以上の整数を表し、かつ、yおよびzはそれぞれ1以上の整数を表す)で示される鎖状炭化水素化合物を含むエッチングガスを用いて膜をエッチングすることを含み、
前記CxHyFzの炭素鎖上の各末端の炭素原子は、水素原子およびフッ素原子のうちのフッ素原子のみと結合している鎖状炭化水素化合物である、半導体装置の製造方法。 - 前記エッチングガスは、xの値が3〜5の整数であり、y≦zである前記CxHyFzで示される鎖状炭化水素化合物を含むエッチングガスである、請求項1に記載の半導体装置の製造方法。
- 前記CxHyFzは、C3HF5、C4H4F6、C4H3F7、C4H2F8、C4HF9、C5H6F6、C5H5F7、C5H4F8、C5H3F9、C5H2F10、およびC5HF11の少なくともいずれかを含むエッチングガスである、請求項1または2に記載の半導体装置の製造方法。
- さらに、酸素ガス、希ガス、およびCaFbで示されるフッ化炭素化合物ガス(aおよびbはそれぞれ1以上の整数を表す)のうちの少なくともいずれかを含むエッチングガスである、請求項1から3のいずれか1項に記載の半導体装置の製造方法。
- 前記膜は、前記CxHyFzで示される鎖状炭化水素化合物を含むエッチングガスから生成されたプラズマを用いてエッチングされる、請求項1から4のいずれか1項に記載の半導体装置の製造方法。
- 前記プラズマは、前記CxHyFzで示される鎖状炭化水素化合物の分子から水素原子およびフッ素原子のうちの水素原子のみが脱離して生成された第1ラジカルと、前記CxHyFzで示される鎖状炭化水素化合物の分子から水素原子およびフッ素原子のうちのフッ素原子のみが脱離して生成された第2ラジカルと、CxHyFzで示される鎖状炭化水素化合物の分子から水素原子およびフッ素原子の両方が脱離して生成された第3ラジカルとを含み、
前記プラズマ中の前記第1ラジカルの濃度は、前記プラズマ中の前記第2および第3ラジカルの合計濃度よりも大きい、請求項5に記載の半導体装置の製造方法。 - 前記プラズマのエッチング処理工程室内の密度は、5.0×109〜3.0×1011個/cm3である、請求項5または6に記載の半導体装置の製造方法。
- 前記膜は、基板上に交互に形成された複数の第1膜と複数の第2膜とを含む、請求項1から7のいずれか1項に記載の半導体装置の製造方法。
- 前記エッチングでは、アスペクト比が10以上の凹部が前記膜に形成される、請求項1から8のいずれか1項に記載の半導体装置の製造方法。
- CxHyFz(Cは炭素、Hは水素、Fはフッ素を表し、xは3以上の整数を表し、かつ、yおよびzはそれぞれ1以上の整数を表す)で示される鎖状炭化水素化合物を含み、
前記CxHyFzの炭素鎖上の各末端の炭素原子は、水素原子およびフッ素原子のうちのフッ素原子のみと結合している鎖状炭化水素化合物であり、
前記CxHyFzは、C3HF5、C4H4F6、C4H3F7、C4H2F8、C4HF9、C5H6F6、C5H5F7、C5H4F8、C5H3F9、C5H2F10、およびC5HF11の少なくともいずれかを含む、エッチングガス。 - さらに、酸素ガス、希ガス、およびCaFbで示されるフッ化炭素化合物ガス(aおよびbはそれぞれ1以上の整数を表す)のうちの少なくともいずれかを含むエッチングガスである、請求項10に記載のエッチングガス。
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JP2018169983A JP7173799B2 (ja) | 2018-09-11 | 2018-09-11 | 半導体装置の製造方法およびエッチングガス |
PCT/JP2019/027316 WO2020054200A1 (ja) | 2018-09-11 | 2019-07-10 | 半導体装置の製造方法およびエッチングガス |
EP19858978.0A EP3852131A4 (en) | 2018-09-11 | 2019-07-10 | METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE AND ETCHING GAS |
KR1020217007286A KR102587426B1 (ko) | 2018-09-11 | 2019-07-10 | 반도체 장치의 제조 방법 및 에칭 가스 |
KR1020237021037A KR102657842B1 (ko) | 2018-09-11 | 2019-07-10 | 반도체 장치의 제조 방법 및 에칭 가스 |
CN201980059146.4A CN112673459A (zh) | 2018-09-11 | 2019-07-10 | 半导体装置的制造方法和蚀刻气体 |
TW108125426A TWI724465B (zh) | 2018-09-11 | 2019-07-18 | 半導體裝置之製造方法及蝕刻氣體 |
US17/197,544 US20210193475A1 (en) | 2018-09-11 | 2021-03-10 | Method of manufacturing semiconductor device, and etching gas |
JP2022174854A JP7400058B2 (ja) | 2018-09-11 | 2022-10-31 | 半導体装置の製造方法およびエッチング方法 |
US18/325,640 US20230307244A1 (en) | 2018-09-11 | 2023-05-30 | Method of manufacturing semiconductor device, and etching gas |
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JPH09148314A (ja) * | 1995-09-01 | 1997-06-06 | Applied Materials Inc | ケイ化チタンのエッチングプロセス |
JPH10199865A (ja) * | 1996-10-30 | 1998-07-31 | Agency Of Ind Science & Technol | ドライエッチング用ガス組成物およびドライエッチング方法 |
JP2010189338A (ja) * | 2009-02-19 | 2010-09-02 | Nippon Zeon Co Ltd | ハロゲン化化合物を脱ハロゲン化水素する方法 |
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JP2017163032A (ja) * | 2016-03-10 | 2017-09-14 | 東芝メモリ株式会社 | 半導体装置の製造方法 |
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JP2023002798A (ja) | 2023-01-10 |
US20230307244A1 (en) | 2023-09-28 |
EP3852131A1 (en) | 2021-07-21 |
WO2020054200A1 (ja) | 2020-03-19 |
CN112673459A (zh) | 2021-04-16 |
US20210193475A1 (en) | 2021-06-24 |
KR20230097221A (ko) | 2023-06-30 |
JP7400058B2 (ja) | 2023-12-18 |
KR102587426B1 (ko) | 2023-10-11 |
KR102657842B1 (ko) | 2024-04-17 |
TW202010869A (zh) | 2020-03-16 |
KR20210053905A (ko) | 2021-05-12 |
EP3852131A4 (en) | 2022-05-25 |
JP7173799B2 (ja) | 2022-11-16 |
TWI724465B (zh) | 2021-04-11 |
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