JP2019523994A5 - - Google Patents
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- JP2019523994A5 JP2019523994A5 JP2018565352A JP2018565352A JP2019523994A5 JP 2019523994 A5 JP2019523994 A5 JP 2019523994A5 JP 2018565352 A JP2018565352 A JP 2018565352A JP 2018565352 A JP2018565352 A JP 2018565352A JP 2019523994 A5 JP2019523994 A5 JP 2019523994A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- single crystal
- crystal silicon
- epitaxial
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000010410 layer Substances 0.000 claims 49
- 239000000758 substrate Substances 0.000 claims 15
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims 14
- 239000012790 adhesive layer Substances 0.000 claims 12
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims 10
- 239000000919 ceramic Substances 0.000 claims 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 4
- 230000004888 barrier function Effects 0.000 claims 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 4
- 229920005591 polysilicon Polymers 0.000 claims 4
- 229910052710 silicon Inorganic materials 0.000 claims 4
- 239000010703 silicon Substances 0.000 claims 4
- 229910002601 GaN Inorganic materials 0.000 claims 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims 1
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201662350084P | 2016-06-14 | 2016-06-14 | |
| US201662350077P | 2016-06-14 | 2016-06-14 | |
| US62/350,084 | 2016-06-14 | ||
| US62/350,077 | 2016-06-14 | ||
| PCT/US2017/037252 WO2017218536A1 (en) | 2016-06-14 | 2017-06-13 | Engineered substrate structure for power and rf applications |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019217661A Division JP7001660B2 (ja) | 2016-06-14 | 2019-12-01 | 電力およびｒｆ用途用の設計された基板構造 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2019523994A JP2019523994A (ja) | 2019-08-29 |
| JP2019523994A5 true JP2019523994A5 (cg-RX-API-DMAC7.html) | 2019-11-28 |
| JP6626607B2 JP6626607B2 (ja) | 2019-12-25 |
Family
ID=60664230
Family Applications (5)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018565352A Active JP6626607B2 (ja) | 2016-06-14 | 2017-06-13 | 電力およびｒｆ用途用の設計された基板構造 |
| JP2019217661A Active JP7001660B2 (ja) | 2016-06-14 | 2019-12-01 | 電力およびｒｆ用途用の設計された基板構造 |
| JP2021210164A Active JP7416556B2 (ja) | 2016-06-14 | 2021-12-24 | 電力およびｒｆ用途用の設計された基板構造 |
| JP2023161626A Active JP7631461B2 (ja) | 2016-06-14 | 2023-09-25 | 電力およびｒｆ用途用の設計された基板構造 |
| JP2025017456A Pending JP2025102749A (ja) | 2016-06-14 | 2025-02-05 | 電力およびｒｆ用途用の設計された基板構造 |
Family Applications After (4)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019217661A Active JP7001660B2 (ja) | 2016-06-14 | 2019-12-01 | 電力およびｒｆ用途用の設計された基板構造 |
| JP2021210164A Active JP7416556B2 (ja) | 2016-06-14 | 2021-12-24 | 電力およびｒｆ用途用の設計された基板構造 |
| JP2023161626A Active JP7631461B2 (ja) | 2016-06-14 | 2023-09-25 | 電力およびｒｆ用途用の設計された基板構造 |
| JP2025017456A Pending JP2025102749A (ja) | 2016-06-14 | 2025-02-05 | 電力およびｒｆ用途用の設計された基板構造 |
Country Status (7)
| Country | Link |
|---|---|
| EP (1) | EP3469119A4 (cg-RX-API-DMAC7.html) |
| JP (5) | JP6626607B2 (cg-RX-API-DMAC7.html) |
| KR (1) | KR102361057B1 (cg-RX-API-DMAC7.html) |
| CN (2) | CN109844184B (cg-RX-API-DMAC7.html) |
| SG (1) | SG11201810919UA (cg-RX-API-DMAC7.html) |
| TW (4) | TWI894863B (cg-RX-API-DMAC7.html) |
| WO (1) | WO2017218536A1 (cg-RX-API-DMAC7.html) |
Families Citing this family (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10297445B2 (en) | 2016-06-14 | 2019-05-21 | QROMIS, Inc. | Engineered substrate structure for power and RF applications |
| CN109844184B (zh) * | 2016-06-14 | 2021-11-30 | 克罗米斯有限公司 | 用于功率应用和射频应用的工程化衬底结构 |
| US10622468B2 (en) * | 2017-02-21 | 2020-04-14 | QROMIS, Inc. | RF device integrated on an engineered substrate |
| US10734303B2 (en) * | 2017-11-06 | 2020-08-04 | QROMIS, Inc. | Power and RF devices implemented using an engineered substrate structure |
| US10586844B2 (en) * | 2018-01-23 | 2020-03-10 | Texas Instruments Incorporated | Integrated trench capacitor formed in an epitaxial layer |
| TWI692869B (zh) * | 2019-05-03 | 2020-05-01 | 世界先進積體電路股份有限公司 | 基底及其製造方法 |
| CN111987140B (zh) * | 2019-05-21 | 2025-03-18 | 世界先进积体电路股份有限公司 | 基底及其制造方法 |
| JP7319227B2 (ja) | 2020-05-11 | 2023-08-01 | 信越化学工業株式会社 | Ｉｉｉ－ｖ族化合物結晶用ベース基板及びその製造方法 |
| US20230340694A1 (en) | 2020-06-09 | 2023-10-26 | Shin-Etsu Chemical Co., Ltd. | Substrate for group-iii nitride epitaxial growth and method for producing the same |
| JP7618401B2 (ja) | 2020-07-01 | 2025-01-21 | 信越化学工業株式会社 | 大口径ｉｉｉ族窒化物系エピタキシャル成長用基板とその製造方法 |
| KR102446604B1 (ko) * | 2021-01-04 | 2022-09-26 | 한국과학기술원 | 스트레인드 채널 성장 구조, 및 그를 이용한 스트레인드 채널 및 소자 제조 방법 |
| CN116848296A (zh) | 2021-02-05 | 2023-10-03 | 信越半导体株式会社 | 氮化物半导体基板及其制造方法 |
| JP7549549B2 (ja) | 2021-02-26 | 2024-09-11 | 信越半導体株式会社 | 窒化物半導体基板およびその製造方法 |
| KR20230153370A (ko) | 2021-03-10 | 2023-11-06 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 에피택셜 성장용 종기판 및 그 제조 방법, 그리고 반도체 기판 및 그 제조 방법 |
| WO2022259651A1 (ja) | 2021-06-08 | 2022-12-15 | 信越半導体株式会社 | 窒化物半導体基板及びその製造方法 |
| JP7643250B2 (ja) * | 2021-08-10 | 2025-03-11 | 信越半導体株式会社 | 窒化物半導体基板及びその製造方法 |
| US20240387170A1 (en) * | 2021-09-21 | 2024-11-21 | Shin-Etsu Handotai Co., Ltd. | Nitride semiconductor substrate and method for manufacturing same |
| JP7533793B2 (ja) * | 2021-10-15 | 2024-08-14 | 信越半導体株式会社 | 窒化物半導体基板及びその製造方法 |
| WO2023063278A1 (ja) * | 2021-10-15 | 2023-04-20 | 信越半導体株式会社 | 窒化物半導体基板及びその製造方法 |
| JP7755451B2 (ja) | 2021-10-27 | 2025-10-16 | 信越化学工業株式会社 | エピタキシャル成長用種基板およびその製造方法、ならびに半導体基板およびその製造方法 |
| US20250059676A1 (en) | 2021-12-21 | 2025-02-20 | Shin-Etsu Handotai Co., Ltd. | Nitride semiconductor substrate and method for producing nitride semiconductor substrate |
| JP7657530B2 (ja) | 2021-12-28 | 2025-04-07 | 信越化学工業株式会社 | 高特性エピタキシャル成長用基板とその製造方法 |
| JP7675679B2 (ja) | 2022-03-18 | 2025-05-13 | 信越化学工業株式会社 | 高特性エピ用種基板、高特性エピ用種基板の製造方法、半導体基板、および半導体基板の製造方法 |
| JP7768842B2 (ja) | 2022-06-03 | 2025-11-12 | 信越化学工業株式会社 | Ｉｉｉ族窒化物単結晶基板の製造方法 |
| JP7609154B2 (ja) * | 2022-11-11 | 2025-01-07 | 信越半導体株式会社 | 高周波デバイス用基板およびその製造方法 |
| CN116230643A (zh) * | 2023-03-09 | 2023-06-06 | 东科半导体(安徽)股份有限公司 | GaN器件用陶瓷基板及其制备方法和GaN器件及其制备方法 |
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| CN109671612B (zh) | 2018-11-15 | 2020-07-03 | 中国科学院上海微系统与信息技术研究所 | 一种氧化镓半导体结构及其制备方法 |
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2017
- 2017-06-13 CN CN201780049691.6A patent/CN109844184B/zh active Active
- 2017-06-13 SG SG11201810919UA patent/SG11201810919UA/en unknown
- 2017-06-13 TW TW113110045A patent/TWI894863B/zh active
- 2017-06-13 TW TW106119602A patent/TWI743136B/zh active
- 2017-06-13 KR KR1020197000184A patent/KR102361057B1/ko active Active
- 2017-06-13 CN CN202111369484.3A patent/CN114256068B/zh active Active
- 2017-06-13 WO PCT/US2017/037252 patent/WO2017218536A1/en not_active Ceased
- 2017-06-13 JP JP2018565352A patent/JP6626607B2/ja active Active
- 2017-06-13 EP EP17813933.3A patent/EP3469119A4/en active Pending
- 2017-06-13 TW TW110133509A patent/TWI793755B/zh active
- 2017-06-13 TW TW112101490A patent/TWI839076B/zh active
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2019
- 2019-12-01 JP JP2019217661A patent/JP7001660B2/ja active Active
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2021
- 2021-12-24 JP JP2021210164A patent/JP7416556B2/ja active Active
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2023
- 2023-09-25 JP JP2023161626A patent/JP7631461B2/ja active Active
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2025
- 2025-02-05 JP JP2025017456A patent/JP2025102749A/ja active Pending