JP2018002544A5 - - Google Patents

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Publication number
JP2018002544A5
JP2018002544A5 JP2016131157A JP2016131157A JP2018002544A5 JP 2018002544 A5 JP2018002544 A5 JP 2018002544A5 JP 2016131157 A JP2016131157 A JP 2016131157A JP 2016131157 A JP2016131157 A JP 2016131157A JP 2018002544 A5 JP2018002544 A5 JP 2018002544A5
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JP
Japan
Prior art keywords
layer
crystalline oxide
main component
oxide semiconductor
semiconductor film
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JP2016131157A
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English (en)
Japanese (ja)
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JP6904517B2 (ja
JP2018002544A (ja
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Priority to JP2016131157A priority Critical patent/JP6904517B2/ja
Priority claimed from JP2016131157A external-priority patent/JP6904517B2/ja
Publication of JP2018002544A publication Critical patent/JP2018002544A/ja
Publication of JP2018002544A5 publication Critical patent/JP2018002544A5/ja
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Publication of JP6904517B2 publication Critical patent/JP6904517B2/ja
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JP2016131157A 2016-06-30 2016-06-30 結晶性酸化物半導体膜およびその製造方法 Active JP6904517B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2016131157A JP6904517B2 (ja) 2016-06-30 2016-06-30 結晶性酸化物半導体膜およびその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016131157A JP6904517B2 (ja) 2016-06-30 2016-06-30 結晶性酸化物半導体膜およびその製造方法

Publications (3)

Publication Number Publication Date
JP2018002544A JP2018002544A (ja) 2018-01-11
JP2018002544A5 true JP2018002544A5 (cg-RX-API-DMAC7.html) 2019-08-08
JP6904517B2 JP6904517B2 (ja) 2021-07-14

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JP2016131157A Active JP6904517B2 (ja) 2016-06-30 2016-06-30 結晶性酸化物半導体膜およびその製造方法

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JP (1) JP6904517B2 (cg-RX-API-DMAC7.html)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112424947A (zh) 2018-07-12 2021-02-26 株式会社Flosfia 半导体装置及包含半导体装置的半导体系统
US11760650B2 (en) * 2018-08-01 2023-09-19 Idemitsu Kosan Co.,Ltd. Compound
US12100769B2 (en) 2019-05-23 2024-09-24 Flosfia Inc. Semiconductor device
WO2020261355A1 (ja) * 2019-06-25 2020-12-30 日本碍子株式会社 半導体膜
JPWO2021010238A1 (cg-RX-API-DMAC7.html) * 2019-07-12 2021-01-21
TWI868178B (zh) * 2019-07-12 2025-01-01 日商Ｆｌｏｓｆｉａ股份有限公司 半導體裝置及半導體系統
JP7306640B2 (ja) * 2019-08-28 2023-07-11 信越化学工業株式会社 結晶性酸化物膜
TWI850473B (zh) * 2019-09-30 2024-08-01 日商Ｆｌｏｓｆｉａ股份有限公司 積層結構體及半導體裝置
JPWO2021066156A1 (cg-RX-API-DMAC7.html) * 2019-10-04 2021-04-08
KR102777027B1 (ko) * 2020-01-27 2025-03-05 가부시키가이샤 플로스피아 반도체 장치 및 반도체 장치의 제조 방법
JP7510123B2 (ja) * 2020-01-27 2024-07-03 株式会社Flosfia 半導体装置
JP2023085571A (ja) * 2020-03-17 2023-06-21 日本碍子株式会社 半導体膜
FR3109470B1 (fr) * 2020-04-15 2022-04-01 Commissariat Energie Atomique Diode electroluminescente comprenant une structure hybride formee de couches et de nanofils
EP4194592A4 (en) 2020-08-06 2024-08-21 Shin-Etsu Chemical Co., Ltd. SEMICONDUCTOR LAMINATE, SEMICONDUCTOR ELEMENT, AND METHOD FOR PRODUCING SEMICONDUCTOR ELEMENT
JP7708349B2 (ja) * 2020-12-24 2025-07-15 株式会社Flosfia 半導体素子および半導体装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5343224B1 (ja) * 2012-09-28 2013-11-13 Ｒｏｃａ株式会社 半導体装置および結晶
JP6013410B2 (ja) * 2014-08-07 2016-10-25 株式会社タムラ製作所 Ｇａ２Ｏ３系単結晶基板
JP2016100593A (ja) * 2014-11-26 2016-05-30 株式会社Flosfia 結晶性積層構造体

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