WO2015018397A3 - Metall-keramik-substrat sowie verfahren zum herstellen eines metall-keramik-substrates - Google Patents

Metall-keramik-substrat sowie verfahren zum herstellen eines metall-keramik-substrates Download PDF

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Publication number
WO2015018397A3
WO2015018397A3 PCT/DE2014/100284 DE2014100284W WO2015018397A3 WO 2015018397 A3 WO2015018397 A3 WO 2015018397A3 DE 2014100284 W DE2014100284 W DE 2014100284W WO 2015018397 A3 WO2015018397 A3 WO 2015018397A3
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metal
ceramic substrate
ceramic
silicate
sio2
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PCT/DE2014/100284
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English (en)
French (fr)
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WO2015018397A2 (de
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Bernd LEHMEIER
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Rogers Germany Gmbh
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Publication of WO2015018397A2 publication Critical patent/WO2015018397A2/de
Publication of WO2015018397A3 publication Critical patent/WO2015018397A3/de

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    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
    • C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
    • C04B37/023—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used
    • C04B37/025—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used consisting of glass or ceramic material
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/64—Burning or sintering processes
    • C04B35/645—Pressure sintering
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
    • C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
    • C04B37/021—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles in a direct manner, e.g. direct copper bonding [DCB]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
    • H05K3/388—Improvement of the adhesion between the insulating substrate and the metal by the use of a metallic or inorganic thin film adhesion layer
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
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    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/96—Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance
    • C04B2235/963—Surface properties, e.g. surface roughness
    • C—CHEMISTRY; METALLURGY
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    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
    • C04B2237/04—Ceramic interlayers
    • C04B2237/06—Oxidic interlayers
    • C04B2237/062—Oxidic interlayers based on silica or silicates
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/32—Ceramic
    • C04B2237/36—Non-oxidic
    • C04B2237/368—Silicon nitride
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/40—Metallic
    • C04B2237/407—Copper
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/54—Oxidising the surface before joining
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/70—Forming laminates or joined articles comprising layers of a specific, unusual thickness
    • C04B2237/706—Forming laminates or joined articles comprising layers of a specific, unusual thickness of one or more of the metallic layers or articles
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
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    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/70—Forming laminates or joined articles comprising layers of a specific, unusual thickness
    • C04B2237/708—Forming laminates or joined articles comprising layers of a specific, unusual thickness of one or more of the interlayers
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/86—Joining of two substrates at their largest surfaces, one surface being complete joined and covered, the other surface not, e.g. a small plate joined at it's largest surface on top of a larger plate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/15—Ceramic or glass substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Ceramic Products (AREA)
  • Laminated Bodies (AREA)
  • Manufacturing Of Printed Wiring (AREA)

Abstract

Die Erfindung betrifft ein Metall-Keramik-Substrat mit einem mehrschichtigen, plattenförmigen Keramikmaterial oder -substrat, welches aus einer inneren Basisschicht aus einer Siliziumnitrid-Keramik und aus wenigstens einer auf eine Oberflächenseite der Basisschicht aufgebrachten Zwischenschicht aus einer oxidischen Keramik besteht, sowie mit wenigstens einer Metallisierung, die mit der Zwischenschicht aus der oxidischen Keramik Siliziumdioxid (SiO2) in kristalliner Form in einer willkürlichen Verteilung oder aus Magnesium-Silikat (MgSiO3/Mg2Si2O6) mit Zirkoniumsilikat (ZrSiO4) und/oder Yttriumsilikat (Y2Si2O3), Rest Siliziumdioxid (SiO2) in kristalliner Form und Zirkoniumoxid (ZrO2) durch Direktbonden (DCB-Verfahren) verbunden ist.
PCT/DE2014/100284 2013-08-06 2014-08-06 Metall-keramik-substrat sowie verfahren zum herstellen eines metall-keramik-substrates WO2015018397A2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DE102013108437 2013-08-06
DE102013108437.0 2013-08-06
DE102013108610.1A DE102013108610A1 (de) 2013-08-06 2013-08-09 Metall-Keramik-Substrat sowie Verfahren zum Herstellen eines Metall-Keramik-Substrates
DE102013108610.1 2013-08-09

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WO2015018397A2 WO2015018397A2 (de) 2015-02-12
WO2015018397A3 true WO2015018397A3 (de) 2015-05-14

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DE (1) DE102013108610A1 (de)
WO (1) WO2015018397A2 (de)

Cited By (1)

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JP7034266B2 (ja) 2017-09-12 2022-03-11 ロジャーズ ジャーマニー ゲーエムベーハー レーザダイオードなどの構成要素をヒートシンクに接合するためのアダプタ要素、レーザダイオード、ヒートシンクおよびアダプタ要素を含むシステム、およびアダプタ要素の製造方法

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JP2010521496A (ja) 2007-03-14 2010-06-24 ノップ ニューロサイエンシーズ、インク． キラル精製置換ベンゾチアゾールジアミンの合成
US20110190356A1 (en) 2008-08-19 2011-08-04 Knopp Neurosciences Inc. Compositions and Methods of Using (R)- Pramipexole
WO2013096816A1 (en) 2011-12-22 2013-06-27 Biogen Idec Ma Inc. Improved synthesis of amine substituted 4,5,6,7-tetrahydrobenzothiazole compounds
LT3019167T (lt) 2013-07-12 2021-03-25 Knopp Biosciences Llc Eozinofilų ir (arba) bazofilų padidintų kiekių gydymas
US9468630B2 (en) 2013-07-12 2016-10-18 Knopp Biosciences Llc Compositions and methods for treating conditions related to increased eosinophils
EP3038467B1 (de) 2013-08-13 2020-07-29 Knopp Biosciences LLC Zusammensetzungen und verfahren zur behandlung von plasmazellenerkrankungen und prolymphozytischen b-zellen-erkrankungen
AU2014306597B2 (en) 2013-08-13 2018-05-17 Knopp Biosciences Llc Compositions and methods for treating chronic urticaria
US11006521B2 (en) * 2017-02-23 2021-05-11 Kyocera Corporation Wiring base plate, electronic device package, and electronic device
CN118388263B (zh) * 2024-06-28 2024-10-18 四川富乐华半导体科技有限公司 一种用于减少dcb烧结治具中盖板粘连的方法

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US4613549A (en) * 1984-02-17 1986-09-23 Kabushiki Kaisha Toshiba Bonded metal-ceramics composite
US6107638A (en) * 1997-03-14 2000-08-22 Kabushiki Kaisha Toshiba Silicon nitride circuit substrate and semiconductor device containing same
US6110596A (en) * 1995-09-28 2000-08-29 Kabushiki Kaisha Toshiba Silicon nitride ceramic circuit substrate and semiconductor device using the same
DE102005042554A1 (de) * 2005-08-10 2007-02-15 Curamik Electronics Gmbh Metall-Keramik-Substrat

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DE2213115C3 (de) 1972-03-17 1975-12-04 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum hochfesten Verbinden von Keramiken aus Karbiden, einschließlich des Diamanten, Boriden, Nitriden oder Suiziden mit Metall nach dem Trocken-Lötverfahren
US3766634A (en) 1972-04-20 1973-10-23 Gen Electric Method of direct bonding metals to non-metallic substrates
US3744120A (en) 1972-04-20 1973-07-10 Gen Electric Direct bonding of metals with a metal-gas eutectic
JPH0810710B2 (ja) 1984-02-24 1996-01-31 株式会社東芝 良熱伝導性基板の製造方法
CH684216A5 (fr) 1991-02-15 1994-07-29 Lem Liaisons Electron Mec Dispositif de mesure de courants.
US5912066A (en) 1996-03-27 1999-06-15 Kabushiki Kaisha Toshiba Silicon nitride circuit board and producing method therefor
DE102005061049A1 (de) * 2005-12-19 2007-06-21 Curamik Electronics Gmbh Metall-Keramik-Substrat
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4613549A (en) * 1984-02-17 1986-09-23 Kabushiki Kaisha Toshiba Bonded metal-ceramics composite
US6110596A (en) * 1995-09-28 2000-08-29 Kabushiki Kaisha Toshiba Silicon nitride ceramic circuit substrate and semiconductor device using the same
US6107638A (en) * 1997-03-14 2000-08-22 Kabushiki Kaisha Toshiba Silicon nitride circuit substrate and semiconductor device containing same
DE102005042554A1 (de) * 2005-08-10 2007-02-15 Curamik Electronics Gmbh Metall-Keramik-Substrat

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7034266B2 (ja) 2017-09-12 2022-03-11 ロジャーズ ジャーマニー ゲーエムベーハー レーザダイオードなどの構成要素をヒートシンクに接合するためのアダプタ要素、レーザダイオード、ヒートシンクおよびアダプタ要素を含むシステム、およびアダプタ要素の製造方法

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DE102013108610A1 (de) 2015-02-12

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