JP2019507903A5 - - Google Patents
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- Publication number
- JP2019507903A5 JP2019507903A5 JP2018541182A JP2018541182A JP2019507903A5 JP 2019507903 A5 JP2019507903 A5 JP 2019507903A5 JP 2018541182 A JP2018541182 A JP 2018541182A JP 2018541182 A JP2018541182 A JP 2018541182A JP 2019507903 A5 JP2019507903 A5 JP 2019507903A5
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- layer
- interface protection
- protection layer
- pixel electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000011651 chromium Substances 0.000 claims 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims 4
- 239000002041 carbon nanotube Substances 0.000 claims 4
- 229910021393 carbon nanotube Inorganic materials 0.000 claims 4
- 229910052804 chromium Inorganic materials 0.000 claims 4
- 239000010931 gold Substances 0.000 claims 4
- 239000011777 magnesium Substances 0.000 claims 4
- 229910052710 silicon Inorganic materials 0.000 claims 4
- 239000010703 silicon Substances 0.000 claims 4
- 229910052709 silver Inorganic materials 0.000 claims 4
- 239000004332 silver Substances 0.000 claims 4
- 239000010409 thin film Substances 0.000 claims 4
- 239000010936 titanium Substances 0.000 claims 4
- 239000003990 capacitor Substances 0.000 claims 3
- 239000003989 dielectric material Substances 0.000 claims 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical group [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims 3
- 239000000463 material Substances 0.000 claims 3
- 239000000758 substrate Substances 0.000 claims 3
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 2
- 239000000956 alloy Substances 0.000 claims 2
- 229910045601 alloy Inorganic materials 0.000 claims 2
- 229910052782 aluminium Inorganic materials 0.000 claims 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 2
- 229910052737 gold Inorganic materials 0.000 claims 2
- 229910052749 magnesium Inorganic materials 0.000 claims 2
- 229910052750 molybdenum Inorganic materials 0.000 claims 2
- 239000011733 molybdenum Substances 0.000 claims 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims 2
- 229910052715 tantalum Inorganic materials 0.000 claims 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 2
- 229910052719 titanium Inorganic materials 0.000 claims 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 2
- 229910052721 tungsten Inorganic materials 0.000 claims 2
- 239000010937 tungsten Substances 0.000 claims 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims 2
- HEFNNWSXXWATRW-UHFFFAOYSA-N Ibuprofen Chemical compound CC(C)CC1=CC=C(C(C)C(O)=O)C=C1 HEFNNWSXXWATRW-UHFFFAOYSA-N 0.000 claims 1
- 229910052581 Si3N4 Inorganic materials 0.000 claims 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims 1
- 229910021389 graphene Inorganic materials 0.000 claims 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 1
- 229910052725 zinc Inorganic materials 0.000 claims 1
- 239000011701 zinc Substances 0.000 claims 1
- TYHJXGDMRRJCRY-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) tin(4+) Chemical compound [O-2].[Zn+2].[Sn+4].[In+3] TYHJXGDMRRJCRY-UHFFFAOYSA-N 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201662292017P | 2016-02-05 | 2016-02-05 | |
| US62/292,017 | 2016-02-05 | ||
| PCT/US2017/013953 WO2017136141A1 (en) | 2016-02-05 | 2017-01-18 | Interface engineering for high capacitance capacitor for liquid crystal display |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2019507903A JP2019507903A (ja) | 2019-03-22 |
| JP2019507903A5 true JP2019507903A5 (enExample) | 2020-02-27 |
| JP6966457B2 JP6966457B2 (ja) | 2021-11-17 |
Family
ID=59496337
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018541182A Active JP6966457B2 (ja) | 2016-02-05 | 2017-01-18 | 液晶ディスプレイ用大容量コンデンサのための界面技術 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US20170229554A1 (enExample) |
| JP (1) | JP6966457B2 (enExample) |
| KR (1) | KR102717556B1 (enExample) |
| CN (1) | CN108700788B (enExample) |
| WO (1) | WO2017136141A1 (enExample) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11049887B2 (en) | 2017-11-10 | 2021-06-29 | Applied Materials, Inc. | Layer stack for display applications |
| US20190206691A1 (en) * | 2018-01-04 | 2019-07-04 | Applied Materials, Inc. | High-k gate insulator for a thin-film transistor |
| US20200066858A1 (en) * | 2018-08-24 | 2020-02-27 | Qualcomm Incorporated | High performance thin film transistor with negative index material |
| TWI698029B (zh) * | 2018-11-28 | 2020-07-01 | 財團法人金屬工業研究發展中心 | 形成半導體結構之方法 |
| CN109742087B (zh) * | 2018-12-27 | 2021-08-24 | 武汉华星光电技术有限公司 | 阵列基板及其制备方法 |
| KR102704437B1 (ko) * | 2019-06-13 | 2024-09-09 | 삼성디스플레이 주식회사 | 박막트랜지스터 기판 및 이를 구비한 디스플레이 장치 |
| JP7292163B2 (ja) | 2019-09-19 | 2023-06-16 | 株式会社ディスコ | 被加工物の加工方法 |
| KR102688604B1 (ko) * | 2019-11-04 | 2024-07-25 | 삼성디스플레이 주식회사 | 표시 장치 |
| JP7447432B2 (ja) * | 2019-11-05 | 2024-03-12 | 東京エレクトロン株式会社 | 基板を処理する装置、原料カートリッジ、基板を処理する方法、及び原料カートリッジを製造する方法 |
| KR20210089079A (ko) | 2020-01-06 | 2021-07-15 | 에이에스엠 아이피 홀딩 비.브이. | 채널형 리프트 핀 |
| CN111943175A (zh) * | 2020-07-29 | 2020-11-17 | 北海惠科光电技术有限公司 | 一种石墨烯薄膜和石墨烯材料的制作方法以及显示面板 |
| KR102890627B1 (ko) * | 2020-12-24 | 2025-11-25 | 삼성디스플레이 주식회사 | 표시 장치 및 표시 장치의 제조 방법 |
| US12439650B2 (en) * | 2021-01-15 | 2025-10-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | CMOS fabrication methods for back-gate transistor |
| CN117596917A (zh) * | 2022-08-19 | 2024-02-23 | 华为技术有限公司 | 折叠显示面板及其制备方法、电子设备 |
| CN115763206A (zh) * | 2022-11-15 | 2023-03-07 | 上海华力微电子有限公司 | 一种连接组件及应用其的刻蚀机 |
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| US7588989B2 (en) | 2001-02-02 | 2009-09-15 | Samsung Electronic Co., Ltd. | Dielectric multilayer structures of microelectronic devices and methods for fabricating the same |
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| KR101133753B1 (ko) | 2004-07-26 | 2012-04-09 | 삼성전자주식회사 | 감지 소자를 내장한 액정 표시 장치 |
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| US20060214154A1 (en) * | 2005-03-24 | 2006-09-28 | Eastman Kodak Company | Polymeric gate dielectrics for organic thin film transistors and methods of making the same |
| JP5148912B2 (ja) * | 2006-04-06 | 2013-02-20 | 株式会社半導体エネルギー研究所 | 液晶表示装置及び半導体装置、並びに電子機器 |
| JP2008203761A (ja) | 2007-02-22 | 2008-09-04 | Hitachi Displays Ltd | 表示装置 |
| TW200921225A (en) * | 2007-11-06 | 2009-05-16 | Au Optronics Corp | Transflective liquid crystal display panel |
| CN101452162A (zh) | 2007-12-07 | 2009-06-10 | 上海广电Nec液晶显示器有限公司 | 液晶显示面板中的阵列基板及其制造方法 |
| TWI445083B (zh) * | 2008-02-08 | 2014-07-11 | Tokyo Electron Ltd | Insulation film formation method, the computer can read the memory media and processing system |
| US20090278120A1 (en) * | 2008-05-09 | 2009-11-12 | Korea Institute Of Science And Technology | Thin Film Transistor |
| TWI380106B (en) * | 2008-08-01 | 2012-12-21 | Chunghwa Picture Tubes Ltd | Pixel structure and method for repairing the same |
| CN101847641B (zh) * | 2009-03-27 | 2011-12-28 | 京东方科技集团股份有限公司 | 阵列基板及其制造方法和宽视角液晶显示器 |
| US8115883B2 (en) | 2009-08-27 | 2012-02-14 | Semiconductor Energy Laboratory Co., Ltd. | Display device and method for manufacturing the same |
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| KR101824537B1 (ko) | 2010-10-01 | 2018-03-15 | 삼성디스플레이 주식회사 | 박막 트랜지스터 및 이를 포함하는 유기 발광 디스플레이 |
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| KR102025836B1 (ko) * | 2011-11-07 | 2019-09-27 | 삼성디스플레이 주식회사 | 박막 트랜지스터 어레이 기판, 이를 포함하는 유기 발광 표시 장치 및 그 제조 방법 |
| KR101945237B1 (ko) | 2012-06-01 | 2019-02-08 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 |
| CN108054175A (zh) * | 2012-08-03 | 2018-05-18 | 株式会社半导体能源研究所 | 半导体装置 |
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| TWI551926B (zh) * | 2014-01-27 | 2016-10-01 | 友達光電股份有限公司 | 畫素結構 |
| KR20160114510A (ko) * | 2015-03-24 | 2016-10-05 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 터치 패널 |
| US20170017327A1 (en) * | 2015-07-17 | 2017-01-19 | Innolux Corporation | Touch display device |
-
2016
- 2016-06-30 US US15/198,955 patent/US20170229554A1/en not_active Abandoned
-
2017
- 2017-01-18 WO PCT/US2017/013953 patent/WO2017136141A1/en not_active Ceased
- 2017-01-18 CN CN201780014750.6A patent/CN108700788B/zh active Active
- 2017-01-18 JP JP2018541182A patent/JP6966457B2/ja active Active
- 2017-01-18 KR KR1020187025600A patent/KR102717556B1/ko active Active
- 2017-01-20 US US15/411,724 patent/US10381454B2/en active Active