JP2019507903A - 液晶ディスプレイ用大容量コンデンサのための界面技術 - Google Patents
液晶ディスプレイ用大容量コンデンサのための界面技術 Download PDFInfo
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- JP2019507903A JP2019507903A JP2018541182A JP2018541182A JP2019507903A JP 2019507903 A JP2019507903 A JP 2019507903A JP 2018541182 A JP2018541182 A JP 2018541182A JP 2018541182 A JP2018541182 A JP 2018541182A JP 2019507903 A JP2019507903 A JP 2019507903A
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Abstract
Description
Claims (15)
- 薄膜トランジスタ構造体であって、
薄膜トランジスタ装置内に形成されたコンデンサを備え、前記コンデンサは、
基板上に配置された共通電極と、
前記共通電極上に形成された誘電体層と、
前記誘電体層上に形成されたピクセル電極とをさらに備え、
前記共通電極と前記誘電体層の間、または前記誘電体層と前記ピクセル電極との間に界面保護層が形成される、薄膜トランジスタ構造体。 - 前記誘電体層が、8よりも高い誘電率を有する高誘電体材料である、請求項1に記載の構造体。
- 前記共通電極と前記基板の間に配置された平坦化層の下に形成されたゲート電極
をさらに含む、請求項1に記載の構造体。 - 前記界面保護層は、ケイ素含有材料である、請求項1に記載の構造体。
- 前記誘電体層が窒化ケイ素層であるときに、前記界面保護層は酸窒化ケイ素層である、請求項1に記載の構造体。
- 前記界面保護層は、酸化ケイ素または酸窒化ケイ素層である、請求項2に記載の構造体。
- 前記共通電極と前記ピクセル電極は、酸化インジウムスズ(ITO)、酸化インジウム亜鉛(IZO)、酸化インジウムスズ亜鉛(ITZO)、銀ナノインク、カーボンナノチューブ(CNT)、銀ナノインク、グラフェン、アルミニウム(Al)、タングステン(W)、クロム(Cr)、タンタル(Ta)、チタン(Ti)、モリブデン(Mo)、マグネシウム(Mg)、銀(Ag)、金(Au)、クロム(Cr)またはこれらの合金からなる群から選択された材料から製造される、請求項1に記載の構造体。
- 前記共通電極または前記ピクセル電極は、メッシュ電極またはグリッド電極である、請求項1に記載の構造体。
- 前記ピクセル電極が、第1の電極及び前記第1の電極上に配置された第2の電極を含む、請求項1に記載の構造体。
- 第2の電極はメッシュ電極またはグリッド電極である、請求項9に記載の構造体。
- 薄膜トランジスタ向け用途の基板上にコンデンサ構造体を形成する方法であって、
薄膜トランジスタ装置を形成するのに使用される基板上に共通電極を形成することと、
前記共通電極上に誘電体層を形成することと、
前記誘電体層上にピクセル電極を形成することを含み、
前記共通電極と前記誘電体層の間、または前記誘電体層と前記ピクセル電極との間に界面保護層が形成される、方法。 - 前記界面保護層は、酸窒化ケイ素層または酸化ケイ素層である、請求項11に記載の方法。
- 前記ピクセル電極が、メッシュ電極またはグリッド電極である、請求項11に記載の方法。
- 前記共通電極及びピクセル電極は、酸化インジウムスズ(ITO)、酸化インジウム亜鉛(IZO)、酸化インジウムスズ亜鉛(ITZO)、アルミニウム(Al)、タングステン(W)、クロム(Cr)、タンタル(Ta)、チタン(Ti)、モリブデン(Mo)、マグネシウム(Mg)、銀(Ag)、金(Au)、クロム(Cr)、銀ナノインク、カーボンナノチューブ(CNT)、銀ナノインク、グラフェン、またはこれらの合金からなる群から選択される材料から製造される、請求項11に記載の方法。
- 前記ピクセル電極が第1の電極及び前記第1の電極上に配置された第2の電極を含み、前記第2の電極はメッシュ電極またはグリッド電極である、請求項11に記載の方法。
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