JP2019210175A - 多結晶シリコンロッド - Google Patents
多結晶シリコンロッド Download PDFInfo
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- JP2019210175A JP2019210175A JP2018106564A JP2018106564A JP2019210175A JP 2019210175 A JP2019210175 A JP 2019210175A JP 2018106564 A JP2018106564 A JP 2018106564A JP 2018106564 A JP2018106564 A JP 2018106564A JP 2019210175 A JP2019210175 A JP 2019210175A
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- polycrystalline silicon
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/03—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition of silicon halides or halosilanes or reduction thereof with hydrogen as the only reducing agent
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B28/00—Production of homogeneous polycrystalline material with defined structure
- C30B28/12—Production of homogeneous polycrystalline material with defined structure directly from the gas state
- C30B28/14—Production of homogeneous polycrystalline material with defined structure directly from the gas state by chemical reaction of reactive gases
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/10—Particle morphology extending in one dimension, e.g. needle-like
- C01P2004/16—Nanowires or nanorods, i.e. solid nanofibres with two nearly equal dimensions between 1-100 nanometer
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Silicon Compounds (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
まず、トリクロロシランを原料とし、シーメンス法により、異なる析出条件下で、多結晶シリコンロッドを5種類準備し(ロッドA〜E)、これらの多結晶シリコンロッドのそれぞれから、シリコン芯線の軸方向と垂直を成す径方向を主面の方向とする結晶片(評価試料)を採取した。
上記ロッドAおよびBに加え、トリクロロシランを原料とし、シーメンス法により、異なる析出条件下で、多結晶シリコンロッドを3種類準備し(ロッドF〜H)、これら5種類の多結晶シリコンロッドのそれぞれから、「実験1」とは異なる方向である、シリコン芯線の軸方向を主面の方向とする結晶片(評価試料)を採取した。
10 多結晶シリコンロッド
21、22 評価試料(結晶片)
Claims (5)
- シーメンス法により育成された多結晶シリコンロッドであって、
シリコン芯線部分を除く領域から結晶片を採取して評価した場合に、粒径が100nm以下の大きさの結晶粒が面積割合で3%以上を占める、ことを特徴とする多結晶シリコンロッド。 - 前記結晶片は、シリコン芯線の軸方向を主面の方向とする結晶片である、請求項1に記載の多結晶シリコンロッド。
- 前記結晶片は、シリコン芯線の軸方向と垂直を成す径方向を主面の方向とする結晶片である、請求項1に記載の多結晶シリコンロッド。
- 前記100nm以下の大きさの結晶粒が面積割合で6%以上を占める、請求項1〜3の何れか1項に記載の多結晶シリコンロッド。
- 前記多結晶シリコンロッドは、トリクロロシランまたはモノシランを原料として育成されたものである、請求項1〜4の何れか1項に記載の多結晶シリコンロッド。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018106564A JP7050581B2 (ja) | 2018-06-04 | 2018-06-04 | 多結晶シリコンロッドの選別方法 |
US16/418,162 US20190367374A1 (en) | 2018-06-04 | 2019-05-21 | Polycrystalline silicon rod |
CN201910431751.1A CN110550634A (zh) | 2018-06-04 | 2019-05-23 | 多晶硅棒 |
EP19177986.7A EP3578513B1 (en) | 2018-06-04 | 2019-06-03 | Polycrystalline silicon rod |
US17/502,996 US20220033267A1 (en) | 2018-06-04 | 2021-10-15 | Polycrystalline silicon rod |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018106564A JP7050581B2 (ja) | 2018-06-04 | 2018-06-04 | 多結晶シリコンロッドの選別方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2019210175A true JP2019210175A (ja) | 2019-12-12 |
JP7050581B2 JP7050581B2 (ja) | 2022-04-08 |
Family
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JP2018106564A Active JP7050581B2 (ja) | 2018-06-04 | 2018-06-04 | 多結晶シリコンロッドの選別方法 |
Country Status (4)
Country | Link |
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US (2) | US20190367374A1 (ja) |
EP (1) | EP3578513B1 (ja) |
JP (1) | JP7050581B2 (ja) |
CN (1) | CN110550634A (ja) |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6065787A (ja) * | 1983-09-20 | 1985-04-15 | ワツカ−・ヘミトロニク・ゲゼルシヤフト・フユア・エレクトロニク・グルントシユトツフエ・ミツト・ベシユレンクテル・ハフツング | 転位のないケイ素単結晶ロツドの製造法 |
JP2008285403A (ja) * | 2007-05-16 | 2008-11-27 | Wacker Chemie Ag | 帯域引き上げ用の多結晶シリコンロッド及びその製造方法 |
WO2009063801A1 (ja) * | 2007-11-12 | 2009-05-22 | Sanyo Electric Co., Ltd. | 非水電解質二次電池負極材、非水電解質二次電池用負極及び非水電解質二次電池、並びに非水電解質二次電池負極材の活物質用多結晶珪素粒子の製造方法 |
JP2009224168A (ja) * | 2008-03-17 | 2009-10-01 | Shin Etsu Chem Co Ltd | 非水電解質二次電池負極材及びそれを用いた非水電解質二次電池 |
JP2014031297A (ja) * | 2012-08-06 | 2014-02-20 | Shin Etsu Chem Co Ltd | 多結晶シリコン棒の選択方法、多結晶シリコン塊の製造方法、及び、単結晶シリコンの製造方法 |
JP2016041636A (ja) * | 2014-08-18 | 2016-03-31 | 信越化学工業株式会社 | 多結晶シリコン棒の製造方法および多結晶シリコン棒 |
JP2017141137A (ja) * | 2016-02-12 | 2017-08-17 | 信越化学工業株式会社 | 多結晶シリコンおよび多結晶シリコンの選別方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101406013B1 (ko) * | 2008-03-17 | 2014-06-11 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 비수 전해질 2차 전지용 부극재 및 그것의 제조 방법, 및 비수 전해질 2차 전지용 부극 및 비수 전해질 2차 전지 |
JP5969230B2 (ja) | 2012-03-16 | 2016-08-17 | 株式会社トクヤマ | 多結晶シリコンロッド |
JP5828795B2 (ja) * | 2012-04-04 | 2015-12-09 | 信越化学工業株式会社 | 多結晶シリコンの結晶配向度評価方法、多結晶シリコン棒の選択方法、および単結晶シリコンの製造方法 |
CN103510156A (zh) | 2012-06-29 | 2014-01-15 | 三菱综合材料株式会社 | 多晶硅棒 |
JP6314097B2 (ja) * | 2015-02-19 | 2018-04-18 | 信越化学工業株式会社 | 多結晶シリコン棒 |
JP6454248B2 (ja) | 2015-09-14 | 2019-01-16 | 信越化学工業株式会社 | 多結晶シリコン棒 |
-
2018
- 2018-06-04 JP JP2018106564A patent/JP7050581B2/ja active Active
-
2019
- 2019-05-21 US US16/418,162 patent/US20190367374A1/en not_active Abandoned
- 2019-05-23 CN CN201910431751.1A patent/CN110550634A/zh active Pending
- 2019-06-03 EP EP19177986.7A patent/EP3578513B1/en active Active
-
2021
- 2021-10-15 US US17/502,996 patent/US20220033267A1/en active Pending
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6065787A (ja) * | 1983-09-20 | 1985-04-15 | ワツカ−・ヘミトロニク・ゲゼルシヤフト・フユア・エレクトロニク・グルントシユトツフエ・ミツト・ベシユレンクテル・ハフツング | 転位のないケイ素単結晶ロツドの製造法 |
JP2008285403A (ja) * | 2007-05-16 | 2008-11-27 | Wacker Chemie Ag | 帯域引き上げ用の多結晶シリコンロッド及びその製造方法 |
WO2009063801A1 (ja) * | 2007-11-12 | 2009-05-22 | Sanyo Electric Co., Ltd. | 非水電解質二次電池負極材、非水電解質二次電池用負極及び非水電解質二次電池、並びに非水電解質二次電池負極材の活物質用多結晶珪素粒子の製造方法 |
JP2009224168A (ja) * | 2008-03-17 | 2009-10-01 | Shin Etsu Chem Co Ltd | 非水電解質二次電池負極材及びそれを用いた非水電解質二次電池 |
JP2014031297A (ja) * | 2012-08-06 | 2014-02-20 | Shin Etsu Chem Co Ltd | 多結晶シリコン棒の選択方法、多結晶シリコン塊の製造方法、及び、単結晶シリコンの製造方法 |
JP2016041636A (ja) * | 2014-08-18 | 2016-03-31 | 信越化学工業株式会社 | 多結晶シリコン棒の製造方法および多結晶シリコン棒 |
JP2017141137A (ja) * | 2016-02-12 | 2017-08-17 | 信越化学工業株式会社 | 多結晶シリコンおよび多結晶シリコンの選別方法 |
Also Published As
Publication number | Publication date |
---|---|
EP3578513A1 (en) | 2019-12-11 |
US20190367374A1 (en) | 2019-12-05 |
CN110550634A (zh) | 2019-12-10 |
EP3578513B1 (en) | 2023-08-09 |
JP7050581B2 (ja) | 2022-04-08 |
US20220033267A1 (en) | 2022-02-03 |
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