JP7128124B2 - 多結晶シリコン棒、多結晶シリコンロッドおよびその製造方法 - Google Patents
多結晶シリコン棒、多結晶シリコンロッドおよびその製造方法 Download PDFInfo
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- JP7128124B2 JP7128124B2 JP2019006931A JP2019006931A JP7128124B2 JP 7128124 B2 JP7128124 B2 JP 7128124B2 JP 2019006931 A JP2019006931 A JP 2019006931A JP 2019006931 A JP2019006931 A JP 2019006931A JP 7128124 B2 JP7128124 B2 JP 7128124B2
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- polycrystalline silicon
- silicon rod
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B5/00—Machines or devices designed for grinding surfaces of revolution on work, including those which also grind adjacent plane surfaces; Accessories therefor
- B24B5/02—Machines or devices designed for grinding surfaces of revolution on work, including those which also grind adjacent plane surfaces; Accessories therefor involving centres or chucks for holding work
- B24B5/04—Machines or devices designed for grinding surfaces of revolution on work, including those which also grind adjacent plane surfaces; Accessories therefor involving centres or chucks for holding work for grinding cylindrical surfaces externally
- B24B5/047—Machines or devices designed for grinding surfaces of revolution on work, including those which also grind adjacent plane surfaces; Accessories therefor involving centres or chucks for holding work for grinding cylindrical surfaces externally of workpieces turning about a vertical axis
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B5/00—Machines or devices designed for grinding surfaces of revolution on work, including those which also grind adjacent plane surfaces; Accessories therefor
- B24B5/02—Machines or devices designed for grinding surfaces of revolution on work, including those which also grind adjacent plane surfaces; Accessories therefor involving centres or chucks for holding work
- B24B5/04—Machines or devices designed for grinding surfaces of revolution on work, including those which also grind adjacent plane surfaces; Accessories therefor involving centres or chucks for holding work for grinding cylindrical surfaces externally
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B5/00—Machines or devices designed for grinding surfaces of revolution on work, including those which also grind adjacent plane surfaces; Accessories therefor
- B24B5/50—Machines or devices designed for grinding surfaces of revolution on work, including those which also grind adjacent plane surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground, e.g. strings
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/037—Purification
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B28/00—Production of homogeneous polycrystalline material with defined structure
- C30B28/12—Production of homogeneous polycrystalline material with defined structure directly from the gas state
- C30B28/14—Production of homogeneous polycrystalline material with defined structure directly from the gas state by chemical reaction of reactive gases
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
- C30B35/007—Apparatus for preparing, pre-treating the source material to be used for crystal growth
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Silicon Compounds (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
トリクロロシランを原料とし、シーメンス法により逆U字型の多結晶シリコン棒を育成した。1回のバッチで5つの逆U字型多結晶シリコン棒(直径約175mm)を得た。このような多結晶シリコン棒の育成を、析出条件は同じとして5バッチ(A~E)行い、各バッチ毎に5本(総計25本)の多結晶シリコンロッドを作製した。これらの多結晶シリコンロッドのそれぞれは、シリコン芯線の中心軸と円筒研削後の多結晶シリコンロッドの中心軸の離間距離が各バッチ間で異なるように、円筒研削が行われている。
トリクロロシランを原料とし、シーメンス法により逆U字型の多結晶シリコン棒を育成した。1回のバッチで5つの逆U字型多結晶シリコン棒(直径約155mm)を得た。このような多結晶シリコン棒の育成を析出条件を変えて5バッチ(F~J)行い、各バッチ毎に5本(総計25本)の多結晶シリコンロッドを作製した。これらの多結晶シリコンロッドのそれぞれは、シリコン芯線の中心軸と円筒研削後の多結晶シリコンロッドの中心軸の離間距離が各バッチ間で異なるように、円筒研削が行われている。
2、20 シリコン芯線
3、30 多結晶シリコンロッド
Claims (4)
- シーメンス法により育成された多結晶シリコン棒を円筒研削する工程を備え、
該円筒研削工程は、シリコン芯線上に形成された状態で、研削後の前記多結晶シリコン棒の中心軸がシリコン芯線の中心軸と2mm以上離間するように実行されることを特徴とする多結晶シリコンロッドの製造方法。 - 前記円筒研削工程は、研削後の前記多結晶シリコン棒の中心軸がシリコン芯線の中心軸と5mm以上離間するように実行される、請求項1に記載の多結晶シリコンロッドの製造方法。
- 前記円筒研削工程は、研削後の前記多結晶シリコン棒の中心軸がシリコン芯線の中心軸と10mm以上離間するように実行される、請求項1に記載の多結晶シリコンロッドの製造方法。
- 前記円筒研削工程は、研削後の前記多結晶シリコン棒の中心軸がシリコン芯線の中心軸と20mm以上離間するように実行される、請求項1に記載の多結晶シリコンロッドの製造方法。
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JP2019006931A JP7128124B2 (ja) | 2019-01-18 | 2019-01-18 | 多結晶シリコン棒、多結晶シリコンロッドおよびその製造方法 |
US16/716,825 US11345603B2 (en) | 2019-01-18 | 2019-12-17 | Polycrystalline silicon bar, polycrystalline silicon rod, and manufacturing method thereof |
EP19217243.5A EP3683015B1 (en) | 2019-01-18 | 2019-12-17 | Polycrystalline silicon bar, polycrystalline silicon rod, and manufacturing method thereof |
CN202010025708.8A CN111455461A (zh) | 2019-01-18 | 2020-01-10 | 多晶硅棒、多晶硅杆及其制造方法 |
JP2022130487A JP2022159501A (ja) | 2019-01-18 | 2022-08-18 | 多結晶シリコン棒、多結晶シリコンロッドおよびその製造方法 |
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JP2019006931A JP7128124B2 (ja) | 2019-01-18 | 2019-01-18 | 多結晶シリコン棒、多結晶シリコンロッドおよびその製造方法 |
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JP2022130487A Pending JP2022159501A (ja) | 2019-01-18 | 2022-08-18 | 多結晶シリコン棒、多結晶シリコンロッドおよびその製造方法 |
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US (1) | US11345603B2 (ja) |
EP (1) | EP3683015B1 (ja) |
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Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2009263149A (ja) | 2008-04-23 | 2009-11-12 | Shin Etsu Chem Co Ltd | 多結晶シリコンロッドの製造方法 |
JP2014028747A (ja) | 2012-06-29 | 2014-02-13 | Mitsubishi Materials Corp | 多結晶シリコンロッド |
JP2015214428A (ja) | 2014-05-07 | 2015-12-03 | 信越化学工業株式会社 | 多結晶シリコン棒、多結晶シリコン棒の製造方法、および、単結晶シリコン |
JP2016028990A (ja) | 2014-07-25 | 2016-03-03 | 信越化学工業株式会社 | 多結晶シリコン棒の製造方法および多結晶シリコン塊 |
JP2016121052A (ja) | 2014-12-25 | 2016-07-07 | 信越化学工業株式会社 | 多結晶シリコン棒、多結晶シリコン棒の加工方法、多結晶シリコン棒の結晶評価方法、および、fz単結晶シリコンの製造方法 |
JP2017048098A (ja) | 2015-09-04 | 2017-03-09 | 信越化学工業株式会社 | 多結晶シリコン棒の製造方法およびfz単結晶シリコンの製造方法 |
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JP2516823B2 (ja) | 1990-02-28 | 1996-07-24 | 信越半導体株式会社 | 浮遊帯域融解法による単結晶シリコン製造用の棒状多結晶シリコン及びその製造方法 |
DE102007023041A1 (de) | 2007-05-16 | 2008-11-20 | Wacker Chemie Ag | Polykristalliner Siliciumstab für das Zonenziehen und ein Verfahren zu dessen Herstellung |
US8376809B2 (en) * | 2009-02-25 | 2013-02-19 | Sumco Corporation | Cylindrical grinder and cylindrical grinding method of ingot |
DE202010002486U1 (de) | 2009-03-31 | 2010-06-10 | Centrotherm Sitec Gmbh | Spann- und Kontaktierungsvorrichtung für Silizium-Dünnstäbe |
JP6939142B2 (ja) | 2017-06-27 | 2021-09-22 | 日本製鉄株式会社 | 金属板用塗料およびこれを用いた塗装金属板の製造方法 |
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- 2019-01-18 JP JP2019006931A patent/JP7128124B2/ja active Active
- 2019-12-17 EP EP19217243.5A patent/EP3683015B1/en active Active
- 2019-12-17 US US16/716,825 patent/US11345603B2/en active Active
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- 2020-01-10 CN CN202010025708.8A patent/CN111455461A/zh active Pending
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Patent Citations (7)
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JP2009263149A (ja) | 2008-04-23 | 2009-11-12 | Shin Etsu Chem Co Ltd | 多結晶シリコンロッドの製造方法 |
JP2014028747A (ja) | 2012-06-29 | 2014-02-13 | Mitsubishi Materials Corp | 多結晶シリコンロッド |
JP2015214428A (ja) | 2014-05-07 | 2015-12-03 | 信越化学工業株式会社 | 多結晶シリコン棒、多結晶シリコン棒の製造方法、および、単結晶シリコン |
JP2016028990A (ja) | 2014-07-25 | 2016-03-03 | 信越化学工業株式会社 | 多結晶シリコン棒の製造方法および多結晶シリコン塊 |
JP2016121052A (ja) | 2014-12-25 | 2016-07-07 | 信越化学工業株式会社 | 多結晶シリコン棒、多結晶シリコン棒の加工方法、多結晶シリコン棒の結晶評価方法、および、fz単結晶シリコンの製造方法 |
JP2017048098A (ja) | 2015-09-04 | 2017-03-09 | 信越化学工業株式会社 | 多結晶シリコン棒の製造方法およびfz単結晶シリコンの製造方法 |
JP2017048099A (ja) | 2015-09-04 | 2017-03-09 | 信越化学工業株式会社 | 多結晶シリコン棒の製造方法およびcz単結晶シリコンの製造方法 |
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US20200231450A1 (en) | 2020-07-23 |
JP2020117408A (ja) | 2020-08-06 |
US11345603B2 (en) | 2022-05-31 |
EP3683015B1 (en) | 2021-09-01 |
EP3683015A1 (en) | 2020-07-22 |
JP2022159501A (ja) | 2022-10-17 |
CN111455461A (zh) | 2020-07-28 |
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