JP2019207923A5 - - Google Patents

Download PDF

Info

Publication number
JP2019207923A5
JP2019207923A5 JP2018101949A JP2018101949A JP2019207923A5 JP 2019207923 A5 JP2019207923 A5 JP 2019207923A5 JP 2018101949 A JP2018101949 A JP 2018101949A JP 2018101949 A JP2018101949 A JP 2018101949A JP 2019207923 A5 JP2019207923 A5 JP 2019207923A5
Authority
JP
Japan
Prior art keywords
cleaning
silicon wafer
oxidizing power
subjected
oxide film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2018101949A
Other languages
English (en)
Japanese (ja)
Other versions
JP6729632B2 (ja
JP2019207923A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from JP2018101949A external-priority patent/JP6729632B2/ja
Priority to JP2018101949A priority Critical patent/JP6729632B2/ja
Priority to KR1020207030653A priority patent/KR20210015762A/ko
Priority to PCT/JP2019/013054 priority patent/WO2019230164A1/ja
Priority to CN201980036009.9A priority patent/CN112204712A/zh
Priority to TW108111633A priority patent/TWI795547B/zh
Publication of JP2019207923A publication Critical patent/JP2019207923A/ja
Publication of JP2019207923A5 publication Critical patent/JP2019207923A5/ja
Publication of JP6729632B2 publication Critical patent/JP6729632B2/ja
Application granted granted Critical
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2018101949A 2018-05-29 2018-05-29 シリコンウェーハの洗浄方法 Active JP6729632B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2018101949A JP6729632B2 (ja) 2018-05-29 2018-05-29 シリコンウェーハの洗浄方法
KR1020207030653A KR20210015762A (ko) 2018-05-29 2019-03-27 실리콘 웨이퍼의 세정방법
PCT/JP2019/013054 WO2019230164A1 (ja) 2018-05-29 2019-03-27 シリコンウェーハの洗浄方法
CN201980036009.9A CN112204712A (zh) 2018-05-29 2019-03-27 硅晶圆的清洗方法
TW108111633A TWI795547B (zh) 2018-05-29 2019-04-02 矽晶圓的洗淨方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018101949A JP6729632B2 (ja) 2018-05-29 2018-05-29 シリコンウェーハの洗浄方法

Publications (3)

Publication Number Publication Date
JP2019207923A JP2019207923A (ja) 2019-12-05
JP2019207923A5 true JP2019207923A5 (enrdf_load_stackoverflow) 2020-01-23
JP6729632B2 JP6729632B2 (ja) 2020-07-22

Family

ID=68698054

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2018101949A Active JP6729632B2 (ja) 2018-05-29 2018-05-29 シリコンウェーハの洗浄方法

Country Status (5)

Country Link
JP (1) JP6729632B2 (enrdf_load_stackoverflow)
KR (1) KR20210015762A (enrdf_load_stackoverflow)
CN (1) CN112204712A (enrdf_load_stackoverflow)
TW (1) TWI795547B (enrdf_load_stackoverflow)
WO (1) WO2019230164A1 (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI865651B (zh) 2019-11-18 2024-12-11 日商索尼半導體解決方案公司 固體攝像裝置及電子機器
JP7480738B2 (ja) * 2021-04-13 2024-05-10 信越半導体株式会社 シリコンウェーハの洗浄方法及び自然酸化膜付きシリコンウェーハの製造方法
JP2023048696A (ja) * 2021-09-28 2023-04-07 芝浦メカトロニクス株式会社 基板処理装置及び基板処理方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2832171B2 (ja) 1995-04-28 1998-12-02 信越半導体株式会社 半導体基板の洗浄装置および洗浄方法
JP3489329B2 (ja) 1996-03-19 2004-01-19 信越半導体株式会社 シリコンウエーハ表面の処理方法
US6436723B1 (en) * 1998-10-16 2002-08-20 Kabushiki Kaisha Toshiba Etching method and etching apparatus method for manufacturing semiconductor device and semiconductor device
JP3538114B2 (ja) * 1999-09-30 2004-06-14 野村マイクロ・サイエンス株式会社 表面付着汚染物質の除去方法及び除去装置
JP2002329691A (ja) 2001-04-27 2002-11-15 Shin Etsu Handotai Co Ltd シリコンウェーハの洗浄方法
JP4292872B2 (ja) * 2003-05-29 2009-07-08 信越半導体株式会社 シリコンエピタキシャルウェーハの製造方法
JP2006208314A (ja) 2005-01-31 2006-08-10 Shin Etsu Handotai Co Ltd シリコン単結晶ウエーハの結晶欠陥の評価方法
JP4933071B2 (ja) * 2005-09-08 2012-05-16 コバレントマテリアル株式会社 シリコンウエハの洗浄方法
KR100841994B1 (ko) * 2006-12-20 2008-06-27 주식회사 실트론 실리콘 웨이퍼의 산화막 제조 방법
KR100931196B1 (ko) * 2007-10-10 2009-12-10 주식회사 실트론 실리콘 웨이퍼 세정 방법
KR20110036990A (ko) * 2009-10-05 2011-04-13 주식회사 엘지실트론 균일 산화막 형성 방법 및 세정 방법
JP2013251461A (ja) * 2012-06-01 2013-12-12 Shin Etsu Handotai Co Ltd 半導体ウェーハの洗浄方法
JP2015041753A (ja) * 2013-08-23 2015-03-02 株式会社東芝 ウェハの洗浄方法

Similar Documents

Publication Publication Date Title
CN109423291B (zh) 在制造半导体器件过程中从硅-锗/硅叠层中选择性地去除硅-锗合金的蚀刻溶液
SG152158A1 (en) Method for cleaning silicon wafer
CN104377119B (zh) 一种锗单晶抛光片的清洗方法
JP2019207923A5 (enrdf_load_stackoverflow)
JP2014212312A5 (ja) 半導体装置の作製方法
JP2015133481A5 (ja) 剥離方法
JP2013070070A5 (ja) 半導体装置及びその作製方法
JP2010135762A5 (ja) 半導体装置の作製方法
JP2016146478A5 (ja) 半導体装置の作製方法
JP2017526181A5 (enrdf_load_stackoverflow)
TWI596668B (zh) 一種半導體晶圓的拋光方法
JP2016063227A5 (enrdf_load_stackoverflow)
JP2016066792A5 (enrdf_load_stackoverflow)
CN105280477A (zh) 一种蓝宝石晶片的清洗工艺
JP2011091388A5 (ja) 半導体装置の作製方法
JP2011009452A5 (enrdf_load_stackoverflow)
JP2011071494A5 (ja) 半導体基板の再生方法
JP2013140949A5 (enrdf_load_stackoverflow)
JP2007234964A5 (enrdf_load_stackoverflow)
TW200623254A (en) Method for producing epitaxial silicon wafer
JP2013157359A5 (enrdf_load_stackoverflow)
CN103646871A (zh) 一种提高非晶硅表面氧化层均匀性的方法
JP2016032073A5 (enrdf_load_stackoverflow)
CN106449884A (zh) 太阳能电池氧化硅层的制备方法及太阳能电池
CN104465323A (zh) 一种缩小有源区关键尺寸的方法