JP2013157359A5 - - Google Patents
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- Publication number
- JP2013157359A5 JP2013157359A5 JP2012014566A JP2012014566A JP2013157359A5 JP 2013157359 A5 JP2013157359 A5 JP 2013157359A5 JP 2012014566 A JP2012014566 A JP 2012014566A JP 2012014566 A JP2012014566 A JP 2012014566A JP 2013157359 A5 JP2013157359 A5 JP 2013157359A5
- Authority
- JP
- Japan
- Prior art keywords
- crystal
- oxide semiconductor
- semiconductor film
- oxygen introduction
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000004065 semiconductor Substances 0.000 claims 23
- 239000013078 crystal Substances 0.000 claims 16
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 8
- 238000000034 method Methods 0.000 claims 8
- 229910052760 oxygen Inorganic materials 0.000 claims 8
- 239000001301 oxygen Substances 0.000 claims 8
- 238000004519 manufacturing process Methods 0.000 claims 6
- 238000005530 etching Methods 0.000 claims 2
- 238000005468 ion implantation Methods 0.000 claims 2
- 238000009832 plasma treatment Methods 0.000 claims 2
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012014566A JP5939812B2 (ja) | 2012-01-26 | 2012-01-26 | 半導体装置の作製方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012014566A JP5939812B2 (ja) | 2012-01-26 | 2012-01-26 | 半導体装置の作製方法 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016098751A Division JP6283710B2 (ja) | 2016-05-17 | 2016-05-17 | 半導体装置の作製方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2013157359A JP2013157359A (ja) | 2013-08-15 |
JP2013157359A5 true JP2013157359A5 (enrdf_load_stackoverflow) | 2014-11-13 |
JP5939812B2 JP5939812B2 (ja) | 2016-06-22 |
Family
ID=49052286
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012014566A Active JP5939812B2 (ja) | 2012-01-26 | 2012-01-26 | 半導体装置の作製方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP5939812B2 (enrdf_load_stackoverflow) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI642186B (zh) * | 2013-12-18 | 2018-11-21 | 日商半導體能源研究所股份有限公司 | 半導體裝置 |
US10096489B2 (en) * | 2014-03-06 | 2018-10-09 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US9887291B2 (en) * | 2014-03-19 | 2018-02-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, display device including the semiconductor device, display module including the display device, and electronic device including the semiconductor device, the display device, or the display module |
KR102775945B1 (ko) * | 2015-02-12 | 2025-03-07 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 산화물 반도체막 및 반도체 장치 |
CN118872076A (zh) * | 2022-03-30 | 2024-10-29 | 株式会社日本显示器 | 半导体装置及半导体装置的制造方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20230173233A (ko) * | 2009-11-13 | 2023-12-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 및 이 표시 장치를 구비한 전자 기기 |
CN105140101B (zh) * | 2009-11-28 | 2018-11-16 | 株式会社半导体能源研究所 | 层叠的氧化物材料、半导体器件、以及用于制造该半导体器件的方法 |
KR101945171B1 (ko) * | 2009-12-08 | 2019-02-07 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
WO2011132590A1 (en) * | 2010-04-23 | 2011-10-27 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
WO2011135987A1 (en) * | 2010-04-28 | 2011-11-03 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
WO2011145468A1 (en) * | 2010-05-21 | 2011-11-24 | Semiconductor Energy Laboratory Co., Ltd. | Memory device and semiconductor device |
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2012
- 2012-01-26 JP JP2012014566A patent/JP5939812B2/ja active Active