TWI795547B - 矽晶圓的洗淨方法 - Google Patents
矽晶圓的洗淨方法 Download PDFInfo
- Publication number
- TWI795547B TWI795547B TW108111633A TW108111633A TWI795547B TW I795547 B TWI795547 B TW I795547B TW 108111633 A TW108111633 A TW 108111633A TW 108111633 A TW108111633 A TW 108111633A TW I795547 B TWI795547 B TW I795547B
- Authority
- TW
- Taiwan
- Prior art keywords
- cleaning
- silicon wafer
- oxide film
- chemical oxide
- dsod
- Prior art date
Links
- 238000004140 cleaning Methods 0.000 title claims abstract description 160
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 103
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 103
- 239000010703 silicon Substances 0.000 title claims abstract description 103
- 238000000034 method Methods 0.000 title claims abstract description 28
- 235000012431 wafers Nutrition 0.000 claims abstract description 106
- 239000000126 substance Substances 0.000 claims abstract description 84
- 230000001590 oxidative effect Effects 0.000 claims abstract description 20
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 28
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 18
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 16
- 239000007788 liquid Substances 0.000 claims description 6
- 239000002245 particle Substances 0.000 abstract description 15
- 238000011156 evaluation Methods 0.000 description 30
- 239000000243 solution Substances 0.000 description 28
- 230000000052 comparative effect Effects 0.000 description 22
- 230000007547 defect Effects 0.000 description 13
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 8
- 239000000203 mixture Substances 0.000 description 7
- 239000002184 metal Substances 0.000 description 6
- 230000003647 oxidation Effects 0.000 description 6
- 238000007254 oxidation reaction Methods 0.000 description 6
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 238000005498 polishing Methods 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 2
- 235000011114 ammonium hydroxide Nutrition 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- 230000005856 abnormality Effects 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 230000036962 time dependent Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
- H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
- H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Detergent Compositions (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JPJP2018-101949 | 2018-05-29 | ||
| JP2018101949A JP6729632B2 (ja) | 2018-05-29 | 2018-05-29 | シリコンウェーハの洗浄方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW202004885A TW202004885A (zh) | 2020-01-16 |
| TWI795547B true TWI795547B (zh) | 2023-03-11 |
Family
ID=68698054
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW108111633A TWI795547B (zh) | 2018-05-29 | 2019-04-02 | 矽晶圓的洗淨方法 |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP6729632B2 (enrdf_load_stackoverflow) |
| KR (1) | KR20210015762A (enrdf_load_stackoverflow) |
| CN (1) | CN112204712A (enrdf_load_stackoverflow) |
| TW (1) | TWI795547B (enrdf_load_stackoverflow) |
| WO (1) | WO2019230164A1 (enrdf_load_stackoverflow) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI865651B (zh) | 2019-11-18 | 2024-12-11 | 日商索尼半導體解決方案公司 | 固體攝像裝置及電子機器 |
| JP7480738B2 (ja) * | 2021-04-13 | 2024-05-10 | 信越半導体株式会社 | シリコンウェーハの洗浄方法及び自然酸化膜付きシリコンウェーハの製造方法 |
| JP2023048696A (ja) * | 2021-09-28 | 2023-04-07 | 芝浦メカトロニクス株式会社 | 基板処理装置及び基板処理方法 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020164887A1 (en) * | 1998-10-16 | 2002-11-07 | Kabushiki Kaisha Toshiba | Etching method and etching apparatus, method for manufacturing semiconductor device, and semiconductor device |
| US20090095321A1 (en) * | 2007-10-10 | 2009-04-16 | Siltron Inc. | Method for cleaning silicon wafer |
| TW201351498A (zh) * | 2012-06-01 | 2013-12-16 | Shinetsu Handotai Kk | 半導體晶圓的洗淨方法 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2832171B2 (ja) | 1995-04-28 | 1998-12-02 | 信越半導体株式会社 | 半導体基板の洗浄装置および洗浄方法 |
| JP3489329B2 (ja) | 1996-03-19 | 2004-01-19 | 信越半導体株式会社 | シリコンウエーハ表面の処理方法 |
| JP3538114B2 (ja) * | 1999-09-30 | 2004-06-14 | 野村マイクロ・サイエンス株式会社 | 表面付着汚染物質の除去方法及び除去装置 |
| JP2002329691A (ja) | 2001-04-27 | 2002-11-15 | Shin Etsu Handotai Co Ltd | シリコンウェーハの洗浄方法 |
| JP4292872B2 (ja) * | 2003-05-29 | 2009-07-08 | 信越半導体株式会社 | シリコンエピタキシャルウェーハの製造方法 |
| JP2006208314A (ja) | 2005-01-31 | 2006-08-10 | Shin Etsu Handotai Co Ltd | シリコン単結晶ウエーハの結晶欠陥の評価方法 |
| JP4933071B2 (ja) * | 2005-09-08 | 2012-05-16 | コバレントマテリアル株式会社 | シリコンウエハの洗浄方法 |
| KR100841994B1 (ko) * | 2006-12-20 | 2008-06-27 | 주식회사 실트론 | 실리콘 웨이퍼의 산화막 제조 방법 |
| KR20110036990A (ko) * | 2009-10-05 | 2011-04-13 | 주식회사 엘지실트론 | 균일 산화막 형성 방법 및 세정 방법 |
| JP2015041753A (ja) * | 2013-08-23 | 2015-03-02 | 株式会社東芝 | ウェハの洗浄方法 |
-
2018
- 2018-05-29 JP JP2018101949A patent/JP6729632B2/ja active Active
-
2019
- 2019-03-27 WO PCT/JP2019/013054 patent/WO2019230164A1/ja active Application Filing
- 2019-03-27 KR KR1020207030653A patent/KR20210015762A/ko not_active Ceased
- 2019-03-27 CN CN201980036009.9A patent/CN112204712A/zh active Pending
- 2019-04-02 TW TW108111633A patent/TWI795547B/zh active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020164887A1 (en) * | 1998-10-16 | 2002-11-07 | Kabushiki Kaisha Toshiba | Etching method and etching apparatus, method for manufacturing semiconductor device, and semiconductor device |
| US20090095321A1 (en) * | 2007-10-10 | 2009-04-16 | Siltron Inc. | Method for cleaning silicon wafer |
| TW201351498A (zh) * | 2012-06-01 | 2013-12-16 | Shinetsu Handotai Kk | 半導體晶圓的洗淨方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2019207923A (ja) | 2019-12-05 |
| WO2019230164A1 (ja) | 2019-12-05 |
| TW202004885A (zh) | 2020-01-16 |
| JP6729632B2 (ja) | 2020-07-22 |
| KR20210015762A (ko) | 2021-02-10 |
| CN112204712A (zh) | 2021-01-08 |
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