JP2019169579A5 - - Google Patents
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- JP2019169579A5 JP2019169579A5 JP2018055445A JP2018055445A JP2019169579A5 JP 2019169579 A5 JP2019169579 A5 JP 2019169579A5 JP 2018055445 A JP2018055445 A JP 2018055445A JP 2018055445 A JP2018055445 A JP 2018055445A JP 2019169579 A5 JP2019169579 A5 JP 2019169579A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- less
- electrode pad
- thickness
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- 239000004065 semiconductor Substances 0.000 claims 10
- 239000010949 copper Substances 0.000 claims 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 5
- 229910052802 copper Inorganic materials 0.000 claims 5
- 238000009713 electroplating Methods 0.000 claims 5
- 239000002184 metal Substances 0.000 claims 4
- 229910052751 metal Inorganic materials 0.000 claims 4
- 238000000034 method Methods 0.000 claims 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical group [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims 3
- 150000002500 ions Chemical class 0.000 claims 3
- 229910017052 cobalt Inorganic materials 0.000 claims 2
- 239000010941 cobalt Substances 0.000 claims 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims 2
- 229910052759 nickel Inorganic materials 0.000 claims 2
- VEQPNABPJHWNSG-UHFFFAOYSA-N Nickel(2+) Chemical compound [Ni+2] VEQPNABPJHWNSG-UHFFFAOYSA-N 0.000 claims 1
- 229910001429 cobalt ion Inorganic materials 0.000 claims 1
- XLJKHNWPARRRJB-UHFFFAOYSA-N cobalt(2+) Chemical compound [Co+2] XLJKHNWPARRRJB-UHFFFAOYSA-N 0.000 claims 1
- 229910052742 iron Inorganic materials 0.000 claims 1
- -1 iron ions Chemical class 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 229910001453 nickel ion Inorganic materials 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018055445A JP2019169579A (ja) | 2018-03-23 | 2018-03-23 | 半導体装置及びその製造方法 |
| US15/998,401 US10985104B2 (en) | 2018-03-23 | 2018-08-15 | Semiconductor device having electrode pad and electrode layer intervening semiconductor layer inbetween and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018055445A JP2019169579A (ja) | 2018-03-23 | 2018-03-23 | 半導体装置及びその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2019169579A JP2019169579A (ja) | 2019-10-03 |
| JP2019169579A5 true JP2019169579A5 (cg-RX-API-DMAC7.html) | 2020-03-05 |
Family
ID=67984320
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018055445A Pending JP2019169579A (ja) | 2018-03-23 | 2018-03-23 | 半導体装置及びその製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US10985104B2 (cg-RX-API-DMAC7.html) |
| JP (1) | JP2019169579A (cg-RX-API-DMAC7.html) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115485858A (zh) * | 2020-05-08 | 2022-12-16 | 罗姆股份有限公司 | 半导体装置 |
| US20220181290A1 (en) * | 2020-12-03 | 2022-06-09 | Semiconductor Components Industries, Llc | Clip interconnect with micro contact heads |
| US20240196582A1 (en) * | 2021-07-01 | 2024-06-13 | Sumitomo Electric Industries, Ltd. | Differential signal transmission cable |
| IT202100021638A1 (it) * | 2021-08-10 | 2023-02-10 | St Microelectronics Srl | Procedimento per fabbricare dispositivi a semiconduttore, dispositivo a semiconduttore e assortimento di dispositivi a semiconduttore corrispondenti |
| JP7791795B2 (ja) * | 2022-09-14 | 2025-12-24 | 株式会社東芝 | 半導体装置 |
| JP7748924B2 (ja) * | 2022-09-14 | 2025-10-03 | 株式会社東芝 | 半導体装置 |
| CN119895574A (zh) * | 2022-09-16 | 2025-04-25 | 新唐科技日本株式会社 | 半导体装置及安装基板 |
| US20240421217A1 (en) * | 2023-06-14 | 2024-12-19 | Analog Devices, Inc. | Semiconductor device including heat shield |
| TWI881455B (zh) * | 2023-09-07 | 2025-04-21 | 台星科企業股份有限公司 | 於晶圓基板背面貼合異質材料的方法 |
| JP7745809B1 (ja) * | 2024-03-26 | 2025-09-29 | 三菱電機株式会社 | 電力用半導体装置、電力用半導体装置の製造方法、電力用半導体モジュール及び電力変換装置 |
Family Cites Families (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2085406B1 (cg-RX-API-DMAC7.html) | 1970-04-17 | 1973-10-19 | Elf | |
| US3892092A (en) | 1974-05-17 | 1975-07-01 | Buehler Ltd | Automatic polishing apparatus |
| KR0144821B1 (ko) | 1994-05-16 | 1998-07-01 | 양승택 | 저전원전압으로 작동가능한 갈륨비소 반도체 전력소자의 제조 방법 |
| JP2004071886A (ja) | 2002-08-07 | 2004-03-04 | Renesas Technology Corp | 縦型パワー半導体装置およびその製造方法 |
| AU2003266560A1 (en) * | 2002-12-09 | 2004-06-30 | Yoshihiro Hayashi | Copper alloy for wiring, semiconductor device, method for forming wiring and method for manufacturing semiconductor device |
| WO2006068082A1 (ja) * | 2004-12-22 | 2006-06-29 | Mitsubishi Denki Kabushiki Kaisha | 半導体装置 |
| JP2008305948A (ja) * | 2007-06-07 | 2008-12-18 | Denso Corp | 半導体装置およびその製造方法 |
| JP2010092895A (ja) * | 2008-10-03 | 2010-04-22 | Sanyo Electric Co Ltd | 半導体装置及びその製造方法 |
| EP2309025B1 (en) | 2008-08-07 | 2012-09-26 | JX Nippon Mining & Metals Corporation | Plated object with copper thin film formed by electroless plating |
| JP5045613B2 (ja) | 2008-08-25 | 2012-10-10 | 三菱マテリアル株式会社 | パワーモジュール用基板及びその製造方法 |
| TW201015718A (en) | 2008-10-03 | 2010-04-16 | Sanyo Electric Co | Semiconductor device and method for manufacturing the same |
| JP5428362B2 (ja) | 2009-02-04 | 2014-02-26 | 富士電機株式会社 | 半導体装置の製造方法 |
| JP2011077460A (ja) | 2009-10-02 | 2011-04-14 | Toyota Motor Corp | 半導体装置と、その製造方法 |
| US8502274B1 (en) * | 2012-04-06 | 2013-08-06 | Infineon Technologies Ag | Integrated circuit including power transistor cells and a connecting line |
| DE112012006596T5 (de) * | 2012-06-29 | 2015-04-02 | Sanyo Electric Co., Ltd. | Solarzellenmodul und Verfahren zum Fertigen eines Solarzellenmoduls |
| WO2015029152A1 (ja) | 2013-08-28 | 2015-03-05 | 株式会社日立製作所 | 半導体装置 |
| US10109609B2 (en) * | 2014-01-13 | 2018-10-23 | Infineon Technologies Austria Ag | Connection structure and electronic component |
| JP2015231033A (ja) * | 2014-06-06 | 2015-12-21 | ルネサスエレクトロニクス株式会社 | 半導体装置及び半導体装置の製造方法 |
| JP6338937B2 (ja) * | 2014-06-13 | 2018-06-06 | ローム株式会社 | パワーモジュールおよびその製造方法 |
| EP3783662B1 (en) * | 2014-09-02 | 2025-03-12 | Flosfia Inc. | Laminated structure and method for manufacturing same, semiconductor device, and crystalline film |
| DE102016104256B3 (de) * | 2016-03-09 | 2017-07-06 | Infineon Technologies Ag | Transistorzellen und Kompensationsstruktur aufweisende Halbleitervorrichtung mit breitem Bandabstand |
-
2018
- 2018-03-23 JP JP2018055445A patent/JP2019169579A/ja active Pending
- 2018-08-15 US US15/998,401 patent/US10985104B2/en active Active
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