JP2019102810A - ウエハーの欠陥領域を評価する方法 - Google Patents
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- 238000000034 method Methods 0.000 title claims abstract description 158
- 230000007547 defect Effects 0.000 title claims abstract description 64
- 238000005530 etching Methods 0.000 claims abstract description 13
- 230000003647 oxidation Effects 0.000 claims description 49
- 238000007254 oxidation reaction Methods 0.000 claims description 49
- 238000009279 wet oxidation reaction Methods 0.000 claims description 24
- 238000012423 maintenance Methods 0.000 claims description 16
- 238000001816 cooling Methods 0.000 claims description 6
- 235000012431 wafers Nutrition 0.000 description 69
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 20
- 229910001882 dioxygen Inorganic materials 0.000 description 20
- 238000011109 contamination Methods 0.000 description 17
- 230000000630 rising effect Effects 0.000 description 15
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 14
- 239000001301 oxygen Substances 0.000 description 14
- 229910052760 oxygen Inorganic materials 0.000 description 14
- 239000010949 copper Substances 0.000 description 13
- 238000011156 evaluation Methods 0.000 description 12
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 11
- 229910052802 copper Inorganic materials 0.000 description 11
- 239000002244 precipitate Substances 0.000 description 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 7
- 239000013078 crystal Substances 0.000 description 7
- 239000002184 metal Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 5
- 230000006798 recombination Effects 0.000 description 5
- 238000005215 recombination Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 238000001556 precipitation Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 108010029660 Intrinsically Disordered Proteins Proteins 0.000 description 2
- 102100037845 Isocitrate dehydrogenase [NADP], mitochondrial Human genes 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 230000000875 corresponding effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 230000009643 growth defect Effects 0.000 description 2
- 230000006911 nucleation Effects 0.000 description 2
- 238000010899 nucleation Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000005247 gettering Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 238000012800 visualization Methods 0.000 description 1
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Abstract
Description
Claims (13)
- サンプルウエハーを準備する段階と、
800℃〜1000℃の温度で前記サンプルウエハーに1次酸化膜を形成する段階と、
1000℃〜1100℃の温度で前記1次酸化膜上に2次酸化膜を形成する段階と、
1100℃〜1200℃の温度で前記2次酸化膜上に3次酸化膜を形成する段階と、
前記第1乃至3次酸化膜を除去する段階と、
前記第1乃至3次酸化膜が除去された前記サンプルウエハーの一面を食刻して前記サンプルウエハーの一面にヘイズを形成する段階と、
前記ヘイズに基づいて前記サンプルウエハーの欠陥領域を評価する段階と、を含む、ウエハー欠陥領域を評価する方法。 - 乾式酸化工程によって前記1次酸化膜及び前記2次酸化膜を形成し、湿式酸化工程によって前記3次酸化膜を形成する、請求項1に記載のウエハー欠陥領域を評価する方法。
- 前記2次酸化膜の厚さは前記1次酸化膜の厚さより厚く、
前記3次酸化膜の厚さは前記2次酸化膜の厚さより厚い、請求項1に記載のウエハー欠陥領域を評価する方法。 - 前記サンプルウエハーの欠陥領域を評価する段階は、
前記ヘイズはホワイト領域及びブラック領域の少なくとも一つを含み、
前記サンプルウエハーのホワイト領域の広さ又はブラック領域の広さによるスコアを付与し、付与されたスコアに基づいて前記サンプルウエハーの欠陥領域を評価する、請求項1に記載のウエハー欠陥領域を評価する方法。 - サンプルウエハーを準備する段階と、
第1ターゲット温度まで温度を上昇させる第1温度上昇区間、及び前記第1ターゲット温度を維持する第1温度維持区間を含み、前記第1温度維持区間で乾式酸化工程を用いて前記サンプルウエハーに第1酸化膜を形成する段階と、
前記第1ターゲット温度から第2ターゲット温度に温度を上昇させる第2温度上昇区間、及び前記ターゲット温度を維持する第2温度維持区間を含み、前記第2温度上昇区間及び前記第2温度維持区間で乾式酸化工程を用いて前記第1酸化膜上に第2酸化膜を形成する段階と、
前記第2ターゲット温度から第3ターゲット温度に温度を上昇させる第3温度上昇区間及び前記第3ターゲット温度を維持する第3温度維持区間を含み、前記第3温度上昇区間及び前記第3温度維持区間で湿式酸化工程を用いて前記第2酸化膜上に3次酸化膜を形成する段階と、
前記第1乃至3次酸化膜を除去する段階と、
前記第1乃至3次酸化膜が除去された前記サンプルウエハーの一面を食刻して前記サンプルウエハーの一面にヘイズを形成する段階と、
前記ヘイズに基づいて前記サンプルウエハーの欠陥領域を評価する段階と、を含む、ウエハー欠陥領域を評価する方法。 - 前記第1ターゲット温度は850℃〜900℃である、請求項5に記載のウエハー欠陥領域を評価する方法。
- 前記第2ターゲット温度は950℃〜1050℃である、請求項6に記載のウエハー欠陥領域を評価する方法。
- 前記第3ターゲット温度は1100℃〜1200℃である、請求項7に記載のウエハー欠陥領域を評価する方法。
- 前記第2温度上昇区間の温度上昇の傾き及び前記第3温度上昇区間の温度上昇の傾きのそれぞれは4[℃/min]〜6[℃/min]である、請求項5に記載のウエハー欠陥領域を評価する方法。
- 前記サンプルウエハーの欠陥領域を評価する段階は、
前記ヘイズはホワイト領域及びブラック領域の少なくとも一つを含み、
前記サンプルウエハーのホワイト領域の広さ又はブラック領域の広さによるスコアを付与し、付与されたスコアに基づいて前記サンプルウエハーの欠陥領域を評価する、請求項5に記載のウエハー欠陥領域を評価する方法。 - 前記3次酸化膜を形成する段階と前記第1乃至3次酸化膜除去段階の間に、前記第3ターゲット温度から第4ターゲット温度まで温度を減少させる冷却工程をさらに含む、請求項5に記載のウエハー欠陥領域を評価する方法。
- 前記第4ターゲット温度は750℃〜850℃であり、前記冷却工程での温度下降の傾きは3[℃/min]〜10[℃/min]である、請求項11に記載のウエハー欠陥領域を評価する方法。
- サンプルウエハーを準備する段階と、
第1ターゲット温度で乾式酸化工程を用いて前記サンプルウエハーに第1酸化膜を形成する段階と、
前記第1ターゲット温度と前記第1ターゲット温度より高い第2ターゲット温度の間で乾式酸化工程を用いて前記第1酸化膜上に第2酸化膜を形成する段階と、
前記第2ターゲット温度と前記第2ターゲット温度より高い第3ターゲット温度の間で湿式酸化工程を用いて前記第2酸化膜上に3次酸化膜を形成する段階と、
前記第1乃至3次酸化膜を除去する段階と、
前記第1乃至3次酸化膜が除去された前記サンプルウエハーの一面を食刻して前記サンプルウエハーの一面にヘイズを形成する段階と、
前記ヘイズに基づいて前記サンプルウエハーの欠陥領域を評価する段階とを含み、
前記第1ターゲット温度は850℃〜900℃であり、前記第2ターゲット温度は950℃〜1050℃であり、前記第3ターゲット温度は1100℃〜1200℃である、ウエハー欠陥領域を評価する方法。
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56104799A (en) * | 1980-01-22 | 1981-08-20 | Nec Corp | Production of si single crystal and device therefor |
JPH0697251A (ja) * | 1992-09-10 | 1994-04-08 | Shin Etsu Handotai Co Ltd | シリコン単結晶の品質評価方法 |
JP2014518196A (ja) * | 2011-07-06 | 2014-07-28 | エルジー シルトロン インコーポレイテッド | ウェハーや単結晶インゴットの品質評価方法及びこれを利用した単結晶インゴットの品質制御方法 |
JP2015154065A (ja) * | 2014-02-19 | 2015-08-24 | 信越半導体株式会社 | シリコン単結晶の品質評価方法 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1035235A4 (en) * | 1998-08-31 | 2002-05-15 | Shinetsu Handotai Kk | METHOD FOR PRODUCING SILICON SINGLE CRYSTAL WAFERS AND SILICON SINGLE CRYSTAL WAFERS |
JP2007194422A (ja) * | 2006-01-19 | 2007-08-02 | Hitachi High-Technologies Corp | 欠陥検査装置用テストパターンウエハ、その製造方法及びそれを用いた欠陥検査装置の評価方法 |
JP5357509B2 (ja) * | 2008-10-31 | 2013-12-04 | 株式会社日立ハイテクノロジーズ | 検査装置、検査方法および検査装置の校正システム |
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56104799A (en) * | 1980-01-22 | 1981-08-20 | Nec Corp | Production of si single crystal and device therefor |
JPH0697251A (ja) * | 1992-09-10 | 1994-04-08 | Shin Etsu Handotai Co Ltd | シリコン単結晶の品質評価方法 |
JP2014518196A (ja) * | 2011-07-06 | 2014-07-28 | エルジー シルトロン インコーポレイテッド | ウェハーや単結晶インゴットの品質評価方法及びこれを利用した単結晶インゴットの品質制御方法 |
JP2015154065A (ja) * | 2014-02-19 | 2015-08-24 | 信越半導体株式会社 | シリコン単結晶の品質評価方法 |
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KR102037748B1 (ko) | 2019-11-29 |
US10634622B2 (en) | 2020-04-28 |
US20190170661A1 (en) | 2019-06-06 |
KR20190066686A (ko) | 2019-06-14 |
CN109887854B (zh) | 2023-08-04 |
JP6802243B2 (ja) | 2020-12-16 |
CN109887854A (zh) | 2019-06-14 |
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