JP2019071340A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 97
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 76
- 125000004430 oxygen atom Chemical group O* 0.000 claims abstract description 62
- 239000007769 metal material Substances 0.000 claims abstract description 38
- 238000000034 method Methods 0.000 claims abstract description 22
- 239000010410 layer Substances 0.000 claims description 79
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 66
- 229910052750 molybdenum Inorganic materials 0.000 claims description 59
- 239000011733 molybdenum Substances 0.000 claims description 56
- 239000007789 gas Substances 0.000 claims description 33
- 238000004544 sputter deposition Methods 0.000 claims description 11
- 230000015572 biosynthetic process Effects 0.000 claims description 8
- 238000000137 annealing Methods 0.000 claims description 6
- 238000005546 reactive sputtering Methods 0.000 claims description 5
- 239000002356 single layer Substances 0.000 claims description 5
- 230000001590 oxidative effect Effects 0.000 claims description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 230000004888 barrier function Effects 0.000 abstract description 35
- 229910052760 oxygen Inorganic materials 0.000 description 36
- 239000001301 oxygen Substances 0.000 description 36
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 33
- 229910000476 molybdenum oxide Inorganic materials 0.000 description 17
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 description 17
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 12
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 8
- 229910001882 dioxygen Inorganic materials 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 8
- 229910052786 argon Inorganic materials 0.000 description 7
- 239000011265 semifinished product Substances 0.000 description 7
- 229910044991 metal oxide Inorganic materials 0.000 description 6
- 150000004706 metal oxides Chemical class 0.000 description 6
- 230000001681 protective effect Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 4
- -1 argon ion Chemical class 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- JKQOBWVOAYFWKG-UHFFFAOYSA-N molybdenum trioxide Chemical compound O=[Mo](=O)=O JKQOBWVOAYFWKG-UHFFFAOYSA-N 0.000 description 4
- KJZYNXUDTRRSPN-UHFFFAOYSA-N holmium atom Chemical compound [Ho] KJZYNXUDTRRSPN-UHFFFAOYSA-N 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 229910002092 carbon dioxide Inorganic materials 0.000 description 2
- 239000001569 carbon dioxide Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000779 depleting effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 150000002926 oxygen Chemical class 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
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- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
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Abstract
Description
本実施例では、ショットキー電極34は、所定の濃度で酸素原子を含有するモリブデンで構成される。これにより、モリブデンが酸素原子を含有していない場合と比較して、ショットキー電極34と半導体基板12との間のショットキー障壁高さを高くすることができる。また、ショットキー電極34を構成する酸素含有モリブデンは、酸素原子を含有するものの、その濃度は比較的に低く、酸化モリブデンとは異なることから、その導電性を十分に維持している。これにより、ショットキー電極34を単層構造でも形成することができるので、製造工程が複雑となることを避けることができる。従って、半導体基板12との高いショットキー障壁高さを有するショットキー電極34をより容易に形成することができる。
本実施例によっても、半導体基板12との高いショットキー障壁高さを有するショットキー電極34をより容易に形成することができる。また、本実施例では、ターゲットを構成する混合物中のモリブデン粉体と三酸化モリブデン(MoO3)粉体の混合比率を変化させることで、ショットキー電極34(本実施例では酸素含有モリブデン)が含有する酸素原子の濃度を調整することができる。
本実施例によっても、半導体基板12との高いショットキー障壁高さを有するショットキー電極34をより容易に形成することができる。また、本実施例では、酸化モリブデン層の数や厚さを変化させることで、ショットキー電極34(本実施例では酸素含有モリブデン)が含有する酸素原子の濃度を調整することができる。
本実施例によっても、半導体基板12との高いショットキー障壁高さを有するショットキー電極34をより容易に形成することができる。また、本実施例では、半導体基板12の表面を酸化させる程度を変化させることで、ショットキー電極34(即ち、酸素含有モリブデン)が含有する酸素原子の所定の濃度に調節することができる。
Claims (8)
- 半導体装置の製造方法であって、
半導体基板を用意する工程と、
前記半導体基板の表面とショットキー接触するショットキー電極を形成する工程と、を備え、
前記ショットキー電極は、所定の濃度で酸素原子を含有する金属材料で構成される、製造方法。 - 前記半導体基板は炭化シリコン基板であり、前記金属材料はモリブデンであり、
前記所定の濃度は、1.0E19〜1.0E22cm−3の範囲内の値である、請求項1に記載の製造方法。 - 前記ショットキー電極は、前記金属材料の単層構造を有する、請求項1又は2に記載の製造方法。
- 前記ショットキー電極の形成は、酸素原子を含有するガスを雰囲気ガス中に添加する反応性スパッタ法により行われる、請求項1から3のいずれか一項に記載の製造方法。
- 前記ショットキー電極の形成は、前記金属材料の酸化物を含有するターゲットを用いたスパッタ法により行われる、請求項1から3のいずれか一項に記載の製造方法。
- 前記ショットキー電極を形成する工程は、
前記半導体基板の前記表面に、前記金属材料の層と前記金属材料の酸化物の層とを交互に積層した積層構造を形成する工程と、
前記積層構造が形成された前記半導体基板をアニール処理して、前記金属材料の酸化物の前記層から前記金属材料の前記層へ酸素原子を拡散させる工程と、
を有する、請求項1から3のいずれか一項に記載の製造方法。 - 前記ショットキー電極を形成する工程は、
前記半導体基板の前記表面を酸化させる工程と、
前記半導体基板の酸化させた前記表面上に、前記金属材料の被膜を形成する工程と、
前記被膜が形成された前記半導体基板をアニール処理して、前記半導体基板から前記被膜へ酸素原子を拡散させる工程と、
を有する、請求項1から3のいずれか一項に記載の製造方法。 - 半導体装置であって、
半導体基板と、
前記半導体基板の上面とショットキー接触するショットキー電極と、
を備え、
前記ショットキー電極は、所定の濃度で酸素原子を含有する金属材料で構成される、半導体装置。
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JP2017196330A JP6977465B2 (ja) | 2017-10-06 | 2017-10-06 | 半導体装置の製造方法 |
CN201811061849.4A CN109638072B (zh) | 2017-10-06 | 2018-09-12 | 制造半导体装置的方法和半导体装置 |
US16/131,957 US10720329B2 (en) | 2017-10-06 | 2018-09-14 | Method of manufacturing semiconductor apparatus and semiconductor apparatus |
DE102018122555.5A DE102018122555A1 (de) | 2017-10-06 | 2018-09-14 | Verfahren zur herstellung einer halbleitervorrichtung und halbleitervorrichtung |
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JP2020202345A (ja) * | 2019-06-13 | 2020-12-17 | 三菱電機株式会社 | 半導体装置、及び、半導体装置の製造方法 |
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Citations (4)
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