JP2019054196A5 - - Google Patents

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JP2019054196A5
JP2019054196A5 JP2017178780A JP2017178780A JP2019054196A5 JP 2019054196 A5 JP2019054196 A5 JP 2019054196A5 JP 2017178780 A JP2017178780 A JP 2017178780A JP 2017178780 A JP2017178780 A JP 2017178780A JP 2019054196 A5 JP2019054196 A5 JP 2019054196A5
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Japan
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electrode
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semiconductor region
partial
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JP2017178780A
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Japanese (ja)
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JP6734241B2 (ja
JP2019054196A (ja
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Priority claimed from JP2017178780A external-priority patent/JP6734241B2/ja
Priority to JP2017178780A priority Critical patent/JP6734241B2/ja
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Priority to US15/899,925 priority patent/US10283633B2/en
Priority to CN201810160353.6A priority patent/CN109524308A/zh
Priority to US16/359,348 priority patent/US10475915B2/en
Publication of JP2019054196A publication Critical patent/JP2019054196A/ja
Publication of JP2019054196A5 publication Critical patent/JP2019054196A5/ja
Priority to JP2020117556A priority patent/JP6989660B2/ja
Publication of JP6734241B2 publication Critical patent/JP6734241B2/ja
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JP2017178780A 2017-09-19 2017-09-19 半導体装置及びその製造方法 Active JP6734241B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2017178780A JP6734241B2 (ja) 2017-09-19 2017-09-19 半導体装置及びその製造方法
US15/899,925 US10283633B2 (en) 2017-09-19 2018-02-20 Semiconductor device and method for manufacturing the same
CN201810160353.6A CN109524308A (zh) 2017-09-19 2018-02-27 半导体装置及其制造方法
US16/359,348 US10475915B2 (en) 2017-09-19 2019-03-20 Semiconductor device and method for manufacturing the same
JP2020117556A JP6989660B2 (ja) 2017-09-19 2020-07-08 半導体装置及びその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017178780A JP6734241B2 (ja) 2017-09-19 2017-09-19 半導体装置及びその製造方法

Related Child Applications (1)

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JP2020117556A Division JP6989660B2 (ja) 2017-09-19 2020-07-08 半導体装置及びその製造方法

Publications (3)

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JP2019054196A JP2019054196A (ja) 2019-04-04
JP2019054196A5 true JP2019054196A5 (https=) 2019-05-16
JP6734241B2 JP6734241B2 (ja) 2020-08-05

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US (2) US10283633B2 (https=)
JP (1) JP6734241B2 (https=)
CN (1) CN109524308A (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7446727B2 (ja) * 2019-07-04 2024-03-11 株式会社東芝 半導体装置
CN111243954A (zh) * 2020-01-19 2020-06-05 中国科学院半导体研究所 GaN基常关型高电子迁移率晶体管及制备方法
US12550396B2 (en) 2022-07-29 2026-02-10 Kabushiki Kaisha Toshiba Semiconductor device
DE102022209807A1 (de) * 2022-09-19 2024-03-21 Robert Bosch Gesellschaft mit beschränkter Haftung Lateraler Gallium-Nitrid Transistor mit abgestuften Flankenbereich

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4364185B2 (ja) 1994-11-24 2009-11-11 株式会社東芝 半導体装置及びその製造方法
GB2295488B (en) 1994-11-24 1996-11-20 Toshiba Cambridge Res Center Semiconductor device
JP3393602B2 (ja) 2000-01-13 2003-04-07 松下電器産業株式会社 半導体装置
WO2005024955A1 (ja) * 2003-09-05 2005-03-17 Sanken Electric Co., Ltd. 半導体装置
JP4579116B2 (ja) * 2004-09-24 2010-11-10 インターナショナル レクティフィアー コーポレイション パワー半導体デバイス
JP2007088185A (ja) * 2005-09-21 2007-04-05 Toshiba Corp 半導体装置及びその製造方法
JP5208463B2 (ja) 2007-08-09 2013-06-12 ローム株式会社 窒化物半導体素子および窒化物半導体素子の製造方法
JP2009099774A (ja) 2007-10-17 2009-05-07 Sharp Corp ヘテロ接合電界効果型トランジスタ
WO2010023846A1 (ja) * 2008-08-25 2010-03-04 国立大学法人山口大学 半導体基板及びその製造方法
US20100219452A1 (en) * 2009-02-27 2010-09-02 Brierley Steven K GaN HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) STRUCTURES
JP5531539B2 (ja) * 2009-10-02 2014-06-25 住友電気工業株式会社 半導体ヘテロ電界効果トランジスタ
JP2012204577A (ja) 2011-03-25 2012-10-22 Nippon Telegr & Teleph Corp <Ntt> 窒化物半導体装置およびその製造方法
JP2012231003A (ja) * 2011-04-26 2012-11-22 Advanced Power Device Research Association 半導体装置
JP2014146646A (ja) * 2013-01-28 2014-08-14 Fujitsu Ltd 半導体装置
US10090406B2 (en) * 2014-09-18 2018-10-02 Infineon Technologies Austria Ag Non-planar normally off compound semiconductor device
JP6565223B2 (ja) 2015-03-05 2019-08-28 富士通株式会社 半導体装置及びその製造方法、電源装置、高周波増幅器

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