JP2021015944A5 - - Google Patents

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Publication number
JP2021015944A5
JP2021015944A5 JP2019131334A JP2019131334A JP2021015944A5 JP 2021015944 A5 JP2021015944 A5 JP 2021015944A5 JP 2019131334 A JP2019131334 A JP 2019131334A JP 2019131334 A JP2019131334 A JP 2019131334A JP 2021015944 A5 JP2021015944 A5 JP 2021015944A5
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Japan
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layer
insulating film
drift layer
drain
source
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JP2019131334A
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Japanese (ja)
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JP7147703B2 (ja
JP2021015944A (ja
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Priority to JP2019131334A priority Critical patent/JP7147703B2/ja
Priority claimed from JP2019131334A external-priority patent/JP7147703B2/ja
Priority to PCT/JP2020/027071 priority patent/WO2021010336A1/ja
Publication of JP2021015944A publication Critical patent/JP2021015944A/ja
Publication of JP2021015944A5 publication Critical patent/JP2021015944A5/ja
Priority to US17/563,141 priority patent/US12125906B2/en
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JP2019131334A 2019-07-16 2019-07-16 半導体装置 Active JP7147703B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2019131334A JP7147703B2 (ja) 2019-07-16 2019-07-16 半導体装置
PCT/JP2020/027071 WO2021010336A1 (ja) 2019-07-16 2020-07-10 半導体装置
US17/563,141 US12125906B2 (en) 2019-07-16 2021-12-28 Semiconductor device with lateral transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2019131334A JP7147703B2 (ja) 2019-07-16 2019-07-16 半導体装置

Publications (3)

Publication Number Publication Date
JP2021015944A JP2021015944A (ja) 2021-02-12
JP2021015944A5 true JP2021015944A5 (https=) 2021-07-29
JP7147703B2 JP7147703B2 (ja) 2022-10-05

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ID=74210980

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JP2019131334A Active JP7147703B2 (ja) 2019-07-16 2019-07-16 半導体装置

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US (1) US12125906B2 (https=)
JP (1) JP7147703B2 (https=)
WO (1) WO2021010336A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111092123A (zh) * 2019-12-10 2020-05-01 杰华特微电子（杭州）有限公司 横向双扩散晶体管及其制造方法
JP2023137588A (ja) * 2022-03-18 2023-09-29 株式会社デンソー 半導体装置
US20240379845A1 (en) * 2023-05-11 2024-11-14 Taiwan Semiconductor Manufacturing Company, Ltd. Transistor structure and methods of formation

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5307973B2 (ja) * 2006-02-24 2013-10-02 セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー 半導体装置
JP5458809B2 (ja) 2009-11-02 2014-04-02 富士電機株式会社 半導体装置
CN102456578B (zh) * 2010-11-03 2013-09-04 凹凸电子（武汉）有限公司 高压晶体管及其制造方法
JP5739732B2 (ja) * 2011-06-07 2015-06-24 シャープ株式会社 半導体装置
US8759912B2 (en) * 2011-08-01 2014-06-24 Monolithic Power Systems, Inc. High-voltage transistor device
US8847318B2 (en) * 2012-01-19 2014-09-30 Globalfoundries Singapore Pte. Ltd. ESD protection circuit
KR101671651B1 (ko) 2012-10-16 2016-11-16 아사히 가세이 일렉트로닉스 가부시끼가이샤 전계 효과 트랜지스터 및 반도체 장치
JP2015046444A (ja) * 2013-08-27 2015-03-12 ルネサスエレクトロニクス株式会社 半導体装置
KR102115619B1 (ko) * 2013-09-06 2020-05-27 에스케이하이닉스 시스템아이씨 주식회사 반도체 장치 및 그 제조방법
JP6284421B2 (ja) * 2014-05-09 2018-02-28 ルネサスエレクトロニクス株式会社 半導体装置
DE102014113467B4 (de) * 2014-09-18 2022-12-15 Infineon Technologies Austria Ag Metallisierung eines Feldeffekt-Leistungstransistors
JP6659485B2 (ja) * 2016-07-20 2020-03-04 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP6382288B2 (ja) 2016-12-27 2018-08-29 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
CN116759455A (zh) * 2018-05-25 2023-09-15 矽力杰半导体技术(杭州)有限公司 横向扩散金属氧化物半导体器件和其制造方法

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