JP7147703B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP7147703B2
JP7147703B2 JP2019131334A JP2019131334A JP7147703B2 JP 7147703 B2 JP7147703 B2 JP 7147703B2 JP 2019131334 A JP2019131334 A JP 2019131334A JP 2019131334 A JP2019131334 A JP 2019131334A JP 7147703 B2 JP7147703 B2 JP 7147703B2
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Japan
Prior art keywords
layer
drift layer
insulating film
drain
source
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JP2019131334A
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English (en)
Japanese (ja)
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JP2021015944A5 (https=
JP2021015944A (ja
Inventor
振一郎 柳
裕介 野中
奨悟 池浦
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Denso Corp
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Denso Corp
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Publication date
Application filed by Denso Corp filed Critical Denso Corp
Priority to JP2019131334A priority Critical patent/JP7147703B2/ja
Priority to PCT/JP2020/027071 priority patent/WO2021010336A1/ja
Publication of JP2021015944A publication Critical patent/JP2021015944A/ja
Publication of JP2021015944A5 publication Critical patent/JP2021015944A5/ja
Priority to US17/563,141 priority patent/US12125906B2/en
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Publication of JP7147703B2 publication Critical patent/JP7147703B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/65—Lateral DMOS [LDMOS] FETs
    • H10D30/657—Lateral DMOS [LDMOS] FETs having substrates comprising insulating layers, e.g. SOI-LDMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H10D62/116—Dielectric isolations, e.g. air gaps adjoining the input or output regions of field-effect devices, e.g. adjoining source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/152—Source regions of DMOS transistors
    • H10D62/155—Shapes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/156—Drain regions of DMOS transistors
    • H10D62/157—Impurity concentrations or distributions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/156—Drain regions of DMOS transistors
    • H10D62/159—Shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/112—Field plates comprising multiple field plate segments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2019131334A 2019-07-16 2019-07-16 半導体装置 Active JP7147703B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2019131334A JP7147703B2 (ja) 2019-07-16 2019-07-16 半導体装置
PCT/JP2020/027071 WO2021010336A1 (ja) 2019-07-16 2020-07-10 半導体装置
US17/563,141 US12125906B2 (en) 2019-07-16 2021-12-28 Semiconductor device with lateral transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2019131334A JP7147703B2 (ja) 2019-07-16 2019-07-16 半導体装置

Publications (3)

Publication Number Publication Date
JP2021015944A JP2021015944A (ja) 2021-02-12
JP2021015944A5 JP2021015944A5 (https=) 2021-07-29
JP7147703B2 true JP7147703B2 (ja) 2022-10-05

Family

ID=74210980

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2019131334A Active JP7147703B2 (ja) 2019-07-16 2019-07-16 半導体装置

Country Status (3)

Country Link
US (1) US12125906B2 (https=)
JP (1) JP7147703B2 (https=)
WO (1) WO2021010336A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111092123A (zh) * 2019-12-10 2020-05-01 杰华特微电子（杭州）有限公司 横向双扩散晶体管及其制造方法
JP2023137588A (ja) * 2022-03-18 2023-09-29 株式会社デンソー 半導体装置
US20240379845A1 (en) * 2023-05-11 2024-11-14 Taiwan Semiconductor Manufacturing Company, Ltd. Transistor structure and methods of formation

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007227746A (ja) 2006-02-24 2007-09-06 Sanyo Electric Co Ltd 半導体装置及びその製造方法
US20120104468A1 (en) 2010-11-03 2012-05-03 O2Micro, Inc. Fabricating high voltage transistors in a low voltage process
JP2012256633A (ja) 2011-06-07 2012-12-27 Sharp Corp 半導体装置
US20130032895A1 (en) 2011-08-01 2013-02-07 Disney Donald R High-voltage transistor device and associated method for manufacturing
WO2014061254A1 (ja) 2012-10-16 2014-04-24 旭化成エレクトロニクス株式会社 電界効果トランジスタ及び半導体装置
JP2015046444A (ja) 2013-08-27 2015-03-12 ルネサスエレクトロニクス株式会社 半導体装置
JP2015216218A (ja) 2014-05-09 2015-12-03 ルネサスエレクトロニクス株式会社 半導体装置
JP2018014395A (ja) 2016-07-20 2018-01-25 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5458809B2 (ja) 2009-11-02 2014-04-02 富士電機株式会社 半導体装置
US8847318B2 (en) * 2012-01-19 2014-09-30 Globalfoundries Singapore Pte. Ltd. ESD protection circuit
KR102115619B1 (ko) * 2013-09-06 2020-05-27 에스케이하이닉스 시스템아이씨 주식회사 반도체 장치 및 그 제조방법
DE102014113467B4 (de) * 2014-09-18 2022-12-15 Infineon Technologies Austria Ag Metallisierung eines Feldeffekt-Leistungstransistors
JP6382288B2 (ja) 2016-12-27 2018-08-29 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
CN116759455A (zh) * 2018-05-25 2023-09-15 矽力杰半导体技术(杭州)有限公司 横向扩散金属氧化物半导体器件和其制造方法

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007227746A (ja) 2006-02-24 2007-09-06 Sanyo Electric Co Ltd 半導体装置及びその製造方法
US20120104468A1 (en) 2010-11-03 2012-05-03 O2Micro, Inc. Fabricating high voltage transistors in a low voltage process
JP2012256633A (ja) 2011-06-07 2012-12-27 Sharp Corp 半導体装置
US20130032895A1 (en) 2011-08-01 2013-02-07 Disney Donald R High-voltage transistor device and associated method for manufacturing
WO2014061254A1 (ja) 2012-10-16 2014-04-24 旭化成エレクトロニクス株式会社 電界効果トランジスタ及び半導体装置
JP2015046444A (ja) 2013-08-27 2015-03-12 ルネサスエレクトロニクス株式会社 半導体装置
JP2015216218A (ja) 2014-05-09 2015-12-03 ルネサスエレクトロニクス株式会社 半導体装置
JP2018014395A (ja) 2016-07-20 2018-01-25 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法

Also Published As

Publication number Publication date
US20220123142A1 (en) 2022-04-21
US12125906B2 (en) 2024-10-22
WO2021010336A1 (ja) 2021-01-21
JP2021015944A (ja) 2021-02-12

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