JP6734241B2 - 半導体装置及びその製造方法 - Google Patents

半導体装置及びその製造方法 Download PDF

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JP6734241B2
JP6734241B2 JP2017178780A JP2017178780A JP6734241B2 JP 6734241 B2 JP6734241 B2 JP 6734241B2 JP 2017178780 A JP2017178780 A JP 2017178780A JP 2017178780 A JP2017178780 A JP 2017178780A JP 6734241 B2 JP6734241 B2 JP 6734241B2
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layer
electrode
semiconductor
semiconductor device
film
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JP2019054196A5 (https=
JP2019054196A (ja
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純平 田島
純平 田島
年輝 彦坂
年輝 彦坂
謙次郎 上杉
謙次郎 上杉
重哉 木村
重哉 木村
雅彦 蔵口
雅彦 蔵口
布上　真也
真也 布上
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Toshiba Corp
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Toshiba Corp
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Priority to US15/899,925 priority patent/US10283633B2/en
Priority to CN201810160353.6A priority patent/CN109524308A/zh
Priority to US16/359,348 priority patent/US10475915B2/en
Publication of JP2019054196A publication Critical patent/JP2019054196A/ja
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    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H10D30/4755—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs
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    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
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    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
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    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
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    • H10D62/824—Heterojunctions comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions
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    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
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    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
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    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
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    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
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    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • H10P50/693—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their size, orientation, disposition, behaviour or shape, in horizontal or vertical plane
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    • H10D64/411—Gate electrodes for field-effect devices for FETs
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  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
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JP2017178780A 2017-09-19 2017-09-19 半導体装置及びその製造方法 Active JP6734241B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2017178780A JP6734241B2 (ja) 2017-09-19 2017-09-19 半導体装置及びその製造方法
US15/899,925 US10283633B2 (en) 2017-09-19 2018-02-20 Semiconductor device and method for manufacturing the same
CN201810160353.6A CN109524308A (zh) 2017-09-19 2018-02-27 半导体装置及其制造方法
US16/359,348 US10475915B2 (en) 2017-09-19 2019-03-20 Semiconductor device and method for manufacturing the same
JP2020117556A JP6989660B2 (ja) 2017-09-19 2020-07-08 半導体装置及びその製造方法

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JP2017178780A JP6734241B2 (ja) 2017-09-19 2017-09-19 半導体装置及びその製造方法

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Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7446727B2 (ja) * 2019-07-04 2024-03-11 株式会社東芝 半導体装置
CN111243954A (zh) * 2020-01-19 2020-06-05 中国科学院半导体研究所 GaN基常关型高电子迁移率晶体管及制备方法
US12550396B2 (en) 2022-07-29 2026-02-10 Kabushiki Kaisha Toshiba Semiconductor device
DE102022209807A1 (de) * 2022-09-19 2024-03-21 Robert Bosch Gesellschaft mit beschränkter Haftung Lateraler Gallium-Nitrid Transistor mit abgestuften Flankenbereich

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4364185B2 (ja) 1994-11-24 2009-11-11 株式会社東芝 半導体装置及びその製造方法
GB2295488B (en) 1994-11-24 1996-11-20 Toshiba Cambridge Res Center Semiconductor device
JP3393602B2 (ja) 2000-01-13 2003-04-07 松下電器産業株式会社 半導体装置
WO2005024955A1 (ja) * 2003-09-05 2005-03-17 Sanken Electric Co., Ltd. 半導体装置
JP4579116B2 (ja) * 2004-09-24 2010-11-10 インターナショナル レクティフィアー コーポレイション パワー半導体デバイス
JP2007088185A (ja) * 2005-09-21 2007-04-05 Toshiba Corp 半導体装置及びその製造方法
JP5208463B2 (ja) 2007-08-09 2013-06-12 ローム株式会社 窒化物半導体素子および窒化物半導体素子の製造方法
JP2009099774A (ja) 2007-10-17 2009-05-07 Sharp Corp ヘテロ接合電界効果型トランジスタ
WO2010023846A1 (ja) * 2008-08-25 2010-03-04 国立大学法人山口大学 半導体基板及びその製造方法
US20100219452A1 (en) * 2009-02-27 2010-09-02 Brierley Steven K GaN HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) STRUCTURES
JP5531539B2 (ja) * 2009-10-02 2014-06-25 住友電気工業株式会社 半導体ヘテロ電界効果トランジスタ
JP2012204577A (ja) 2011-03-25 2012-10-22 Nippon Telegr & Teleph Corp <Ntt> 窒化物半導体装置およびその製造方法
JP2012231003A (ja) * 2011-04-26 2012-11-22 Advanced Power Device Research Association 半導体装置
JP2014146646A (ja) * 2013-01-28 2014-08-14 Fujitsu Ltd 半導体装置
US10090406B2 (en) * 2014-09-18 2018-10-02 Infineon Technologies Austria Ag Non-planar normally off compound semiconductor device
JP6565223B2 (ja) 2015-03-05 2019-08-28 富士通株式会社 半導体装置及びその製造方法、電源装置、高周波増幅器

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CN109524308A (zh) 2019-03-26
US20190088770A1 (en) 2019-03-21
US20190214495A1 (en) 2019-07-11
US10475915B2 (en) 2019-11-12
US10283633B2 (en) 2019-05-07
JP2019054196A (ja) 2019-04-04

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