JP2019030933A - 金属が露出した基板の加工方法 - Google Patents
金属が露出した基板の加工方法 Download PDFInfo
- Publication number
- JP2019030933A JP2019030933A JP2017153170A JP2017153170A JP2019030933A JP 2019030933 A JP2019030933 A JP 2019030933A JP 2017153170 A JP2017153170 A JP 2017153170A JP 2017153170 A JP2017153170 A JP 2017153170A JP 2019030933 A JP2019030933 A JP 2019030933A
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- JP
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- Prior art keywords
- cutting
- substrate
- metal
- exposed
- structures
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 110
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 96
- 239000002184 metal Substances 0.000 title claims abstract description 96
- 238000003672 processing method Methods 0.000 title claims abstract description 14
- 238000005520 cutting process Methods 0.000 claims abstract description 145
- 238000000034 method Methods 0.000 claims abstract description 13
- 230000003287 optical effect Effects 0.000 description 6
- 239000011347 resin Substances 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000000227 grinding Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 230000003014 reinforcing effect Effects 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 101100008049 Caenorhabditis elegans cut-5 gene Proteins 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
- H01L21/3043—Making grooves, e.g. cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3736—Metallic materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Dicing (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Manufacturing Of Printed Wiring (AREA)
Abstract
Description
1a 表面
1b 裏面
3 切断予定ライン
5 デバイス
7 金属基板
7a 金属
7b 壁面
9 構造体
11 切削溝
2 切削装置
4 チャックテーブル
4a 保持面
4b 加工送り方向
6 切削ユニット
8 スピンドル
10 スピンドルハウジング
12 基台
14 切削ブレード
14a フランジ機構
14b 切削砥石
14c 回転方向
16 ナット
Claims (2)
- 所定の幅を有する切断予定ラインが設定され、金属が露出した基板の加工方法であって、
該金属上に該切断予定ラインの幅方向のそれぞれの縁に沿って2本の構造体を該幅に相当する間隔をあけて配設する構造体配設工程と、
該構造体配設工程を実施した後、切削ブレードを該2本の構造体の間から切り込ませて該基板を該切断予定ラインに沿って切削する切削工程と、
を備えることを特徴とする金属が露出した基板の加工方法。 - 該切削ブレードは、円環状の切削砥石を有し、
該2本の構造体間の距離は、該切削砥石の厚さと同じ又は該厚さよりも小さいことを特徴とする請求項1記載の金属が露出した基板の加工方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017153170A JP6890893B2 (ja) | 2017-08-08 | 2017-08-08 | 金属が露出した基板の加工方法 |
TW107123678A TWI778094B (zh) | 2017-08-08 | 2018-07-09 | 金屬露出之基板的加工方法 |
US16/050,068 US10535563B2 (en) | 2017-08-08 | 2018-07-31 | Processing method for substrate having metal exposed |
CN201810883177.9A CN109390280B (zh) | 2017-08-08 | 2018-08-06 | 露出有金属的基板的加工方法 |
KR1020180091958A KR102527032B1 (ko) | 2017-08-08 | 2018-08-07 | 금속이 노출된 기판의 가공 방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017153170A JP6890893B2 (ja) | 2017-08-08 | 2017-08-08 | 金属が露出した基板の加工方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2019030933A true JP2019030933A (ja) | 2019-02-28 |
JP6890893B2 JP6890893B2 (ja) | 2021-06-18 |
Family
ID=65275589
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017153170A Active JP6890893B2 (ja) | 2017-08-08 | 2017-08-08 | 金属が露出した基板の加工方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US10535563B2 (ja) |
JP (1) | JP6890893B2 (ja) |
KR (1) | KR102527032B1 (ja) |
CN (1) | CN109390280B (ja) |
TW (1) | TWI778094B (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2020175460A (ja) * | 2019-04-17 | 2020-10-29 | 株式会社ディスコ | 複合基板の加工方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005191332A (ja) * | 2003-12-26 | 2005-07-14 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法および半導体装置製造装置 |
JP2007035760A (ja) * | 2005-07-25 | 2007-02-08 | Tokyo Seimitsu Co Ltd | ウェーハダイシング方法及びウェーハダイシング装置 |
US20090042368A1 (en) * | 2007-08-09 | 2009-02-12 | Disco Corporation | Wafer processing method |
JP2011210925A (ja) * | 2010-03-30 | 2011-10-20 | Toppan Forms Co Ltd | 電子部品およびその製造方法、部品実装基板 |
US20140315350A1 (en) * | 2012-09-01 | 2014-10-23 | Alpha And Omega Semiconductor Incorporated | Wafer process for molded chip scale package (mcsp) with thick backside metallization |
JP2016162809A (ja) * | 2015-02-27 | 2016-09-05 | 株式会社ディスコ | ウエーハの加工方法 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100462980B1 (ko) * | 1999-09-13 | 2004-12-23 | 비쉐이 메저먼츠 그룹, 인코포레이티드 | 반도체장치용 칩 스케일 표면 장착 패키지 및 그 제조공정 |
JP2003092303A (ja) | 2001-09-19 | 2003-03-28 | Nec Tokin Corp | Icカード用モジュール、icカード及びその製造方法 |
US8680653B2 (en) * | 2007-11-12 | 2014-03-25 | Infineon Technologies Ag | Wafer and a method of dicing a wafer |
JP5166929B2 (ja) * | 2008-03-18 | 2013-03-21 | 株式会社ディスコ | 光デバイスの製造方法 |
JP2009229641A (ja) | 2008-03-21 | 2009-10-08 | Disco Abrasive Syst Ltd | 光デバイスの製造方法 |
JP2009237067A (ja) | 2008-03-26 | 2009-10-15 | Disco Abrasive Syst Ltd | 光デバイスの製造方法 |
JP5395446B2 (ja) * | 2009-01-22 | 2014-01-22 | ルネサスエレクトロニクス株式会社 | 半導体装置および半導体装置の製造方法 |
JP2011018792A (ja) | 2009-07-09 | 2011-01-27 | Disco Abrasive Syst Ltd | ウエーハの加工方法 |
JP2011142115A (ja) * | 2010-01-05 | 2011-07-21 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
TWI529893B (zh) * | 2012-09-01 | 2016-04-11 | 萬國半導體股份有限公司 | 帶有底部金屬基座的半導體器件及其製備方法 |
US9312177B2 (en) * | 2013-12-06 | 2016-04-12 | Applied Materials, Inc. | Screen print mask for laser scribe and plasma etch wafer dicing process |
JP2015123514A (ja) * | 2013-12-25 | 2015-07-06 | 株式会社ディスコ | 加工方法 |
JP6504750B2 (ja) * | 2014-05-07 | 2019-04-24 | 株式会社ディスコ | ウェーハの加工方法 |
WO2015175322A1 (en) * | 2014-05-16 | 2015-11-19 | Applied Materials, Inc. | Carrier with thermally resistant film frame for supporting wafer during singulation |
JP6355996B2 (ja) * | 2014-07-11 | 2018-07-11 | 株式会社ディスコ | 板状ワークの分割方法と切削装置 |
JP6377514B2 (ja) * | 2014-12-17 | 2018-08-22 | 株式会社ディスコ | パッケージ基板の加工方法 |
JP6462422B2 (ja) * | 2015-03-03 | 2019-01-30 | 株式会社ディスコ | 切削装置及びウエーハの加工方法 |
JP6971093B2 (ja) * | 2017-08-30 | 2021-11-24 | 株式会社ディスコ | マルチブレード、加工方法 |
-
2017
- 2017-08-08 JP JP2017153170A patent/JP6890893B2/ja active Active
-
2018
- 2018-07-09 TW TW107123678A patent/TWI778094B/zh active
- 2018-07-31 US US16/050,068 patent/US10535563B2/en active Active
- 2018-08-06 CN CN201810883177.9A patent/CN109390280B/zh active Active
- 2018-08-07 KR KR1020180091958A patent/KR102527032B1/ko active IP Right Grant
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005191332A (ja) * | 2003-12-26 | 2005-07-14 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法および半導体装置製造装置 |
JP2007035760A (ja) * | 2005-07-25 | 2007-02-08 | Tokyo Seimitsu Co Ltd | ウェーハダイシング方法及びウェーハダイシング装置 |
US20090042368A1 (en) * | 2007-08-09 | 2009-02-12 | Disco Corporation | Wafer processing method |
JP2011210925A (ja) * | 2010-03-30 | 2011-10-20 | Toppan Forms Co Ltd | 電子部品およびその製造方法、部品実装基板 |
US20140315350A1 (en) * | 2012-09-01 | 2014-10-23 | Alpha And Omega Semiconductor Incorporated | Wafer process for molded chip scale package (mcsp) with thick backside metallization |
JP2016162809A (ja) * | 2015-02-27 | 2016-09-05 | 株式会社ディスコ | ウエーハの加工方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2020175460A (ja) * | 2019-04-17 | 2020-10-29 | 株式会社ディスコ | 複合基板の加工方法 |
Also Published As
Publication number | Publication date |
---|---|
TW201911396A (zh) | 2019-03-16 |
KR20190016459A (ko) | 2019-02-18 |
CN109390280B (zh) | 2024-03-01 |
TWI778094B (zh) | 2022-09-21 |
US20190051560A1 (en) | 2019-02-14 |
CN109390280A (zh) | 2019-02-26 |
US10535563B2 (en) | 2020-01-14 |
JP6890893B2 (ja) | 2021-06-18 |
KR102527032B1 (ko) | 2023-04-27 |
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