JP2019029448A - 撮像装置、カメラおよび撮像装置の製造方法 - Google Patents

撮像装置、カメラおよび撮像装置の製造方法 Download PDF

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Publication number
JP2019029448A
JP2019029448A JP2017145682A JP2017145682A JP2019029448A JP 2019029448 A JP2019029448 A JP 2019029448A JP 2017145682 A JP2017145682 A JP 2017145682A JP 2017145682 A JP2017145682 A JP 2017145682A JP 2019029448 A JP2019029448 A JP 2019029448A
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Japan
Prior art keywords
silicon nitride
nitride layer
insulator film
film
imaging device
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Pending
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JP2017145682A
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English (en)
Japanese (ja)
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JP2019029448A5 (enExample
Inventor
雄基 川原
Yuki Kawahara
雄基 川原
将司 楠川
Masashi Kusukawa
将司 楠川
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Canon Inc
Original Assignee
Canon Inc
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Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2017145682A priority Critical patent/JP2019029448A/ja
Priority to US16/028,586 priority patent/US11043519B2/en
Publication of JP2019029448A publication Critical patent/JP2019029448A/ja
Publication of JP2019029448A5 publication Critical patent/JP2019029448A5/ja
Priority to JP2021170467A priority patent/JP7418383B2/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H10D64/0111—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors
    • H10D64/0112—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors using conductive layers comprising silicides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/693—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator the insulator comprising nitrogen, e.g. nitrides, oxynitrides or nitrogen-doped materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
    • H10D30/0227—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate having both lightly-doped source and drain extensions and source and drain regions self-aligned to the sides of the gate, e.g. lightly-doped drain [LDD] MOSFET or double-diffused drain [DDD] MOSFET
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/791—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions
    • H10D30/792—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions comprising applied insulating layers, e.g. stress liners

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2017145682A 2017-07-27 2017-07-27 撮像装置、カメラおよび撮像装置の製造方法 Pending JP2019029448A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2017145682A JP2019029448A (ja) 2017-07-27 2017-07-27 撮像装置、カメラおよび撮像装置の製造方法
US16/028,586 US11043519B2 (en) 2017-07-27 2018-07-06 Image capturing apparatus comprising silicon nitride layer of different chlorine concentration, camera, and method of manufacturing image capturing apparatus
JP2021170467A JP7418383B2 (ja) 2017-07-27 2021-10-18 撮像装置およびカメラ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017145682A JP2019029448A (ja) 2017-07-27 2017-07-27 撮像装置、カメラおよび撮像装置の製造方法

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JP2021170467A Division JP7418383B2 (ja) 2017-07-27 2021-10-18 撮像装置およびカメラ

Publications (2)

Publication Number Publication Date
JP2019029448A true JP2019029448A (ja) 2019-02-21
JP2019029448A5 JP2019029448A5 (enExample) 2020-08-27

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JP2021170467A Active JP7418383B2 (ja) 2017-07-27 2021-10-18 撮像装置およびカメラ

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US (1) US11043519B2 (enExample)
JP (2) JP2019029448A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2023161649A (ja) * 2022-04-26 2023-11-08 株式会社シグマ 固体撮像素子の製造方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10177185B2 (en) * 2015-05-07 2019-01-08 Taiwan Semiconductor Manufacturing Co., Ltd. High dielectric constant dielectric layer forming method, image sensor device, and manufacturing method thereof
US11923393B2 (en) * 2021-01-07 2024-03-05 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor image sensor having reflection component and method of making
CN117878060B (zh) * 2024-03-11 2024-05-28 合肥晶合集成电路股份有限公司 一种半导体结构及其制造方法

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JP2011054878A (ja) * 2009-09-04 2011-03-17 Panasonic Corp 半導体装置及びその製造方法
JP2013021169A (ja) * 2011-07-12 2013-01-31 Sony Corp 固体撮像素子、固体撮像素子の製造方法、および電子機器
JP2016111202A (ja) * 2014-12-05 2016-06-20 ルネサスエレクトロニクス株式会社 半導体装置の製造方法および半導体装置
JP2018041836A (ja) * 2016-09-07 2018-03-15 キヤノン株式会社 固体撮像装置およびその製造方法ならびにカメラ

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JP4987796B2 (ja) * 1999-01-08 2012-07-25 株式会社東芝 半導体装置の製造方法
JP4429036B2 (ja) * 2004-02-27 2010-03-10 富士通マイクロエレクトロニクス株式会社 半導体装置の製造方法
JP4530747B2 (ja) * 2004-07-16 2010-08-25 富士通セミコンダクター株式会社 固体撮像装置及びその製造方法
JP4669679B2 (ja) * 2004-07-29 2011-04-13 東京エレクトロン株式会社 窒化珪素膜の製造方法及び半導体装置の製造方法
JP5145672B2 (ja) * 2006-02-27 2013-02-20 富士通セミコンダクター株式会社 半導体装置の製造方法
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JP2011054878A (ja) * 2009-09-04 2011-03-17 Panasonic Corp 半導体装置及びその製造方法
JP2013021169A (ja) * 2011-07-12 2013-01-31 Sony Corp 固体撮像素子、固体撮像素子の製造方法、および電子機器
JP2016111202A (ja) * 2014-12-05 2016-06-20 ルネサスエレクトロニクス株式会社 半導体装置の製造方法および半導体装置
JP2018041836A (ja) * 2016-09-07 2018-03-15 キヤノン株式会社 固体撮像装置およびその製造方法ならびにカメラ

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2023161649A (ja) * 2022-04-26 2023-11-08 株式会社シグマ 固体撮像素子の製造方法
JP7837544B2 (ja) 2022-04-26 2026-03-31 株式会社シグマ 固体撮像素子の製造方法

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US20190035826A1 (en) 2019-01-31
US11043519B2 (en) 2021-06-22
JP7418383B2 (ja) 2024-01-19
JP2022009215A (ja) 2022-01-14

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