JP2019013079A - パワー半導体装置及びそれを用いた電力変換装置 - Google Patents
パワー半導体装置及びそれを用いた電力変換装置 Download PDFInfo
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Abstract
Description
不図示のAlワイヤを導体部813とパワー半導体素子804に接続する。
図8は、図6(c)工程に対応するパワー半導体装置300の製造工程途中の斜視図である。
Claims (5)
- 半導体素子と導体部を含んで構成される回路体と、
前記回路体を挟んで互いに対向される第1絶縁部材と第2絶縁部材と、
前記回路体と前記第1絶縁部材と前記第2絶縁部材を挟んで互いに対向される第1ベースと第2ベースと、
前記第1ベースにより覆われる第1開口部及び前記第2ベースにより覆われる第2開口部が形成されるケースと、
前記第1ベースと前記第2ベースとの間の空間に設けられかつ当該双方のベースに接触することにより当該第1ベースと当該第2ベースとの間の距離を規制する距離規制部と、を備えるパワー半導体装置。 - 請求項1に記載のパワー半導体装置であって、
前記第1絶縁部材と前記第2絶縁部材は、セラミック基板であり、
前記距離規制部は、前記セラミック基板から突出するパワー半導体装置。 - 請求項1に記載のパワー半導体装置であって、
前記突出部は、前記第1ベースに形成されかつ前記第2ベースに向かって突出する第1突出部と、前記第2ベースに形成されかつ前記第1ベースに向かって突出する第2突出部と、により構成され、
前記第1突出部は、前記第2突出部と接触することにより前記第1ベースと前記第2ベースとの間の距離を規制するパワー半導体装置。 - 請求項1または3に記載のパワー半導体装置であって、
前記第1ベース又は前記第2ベースは、前記ケースが配置された側に向かって変形される屈曲部を有しかつ当該ケースに接続されるパワー半導体装置。 - 請求項1ないし3に記載のいずれかのパワー半導体装置であって、
前記第1ベース又は前記第2ベースは、当該第1ベース又は当該第2ベースと前記ケースとの間の空間に樹脂封止材を埋めるパワー半導体装置。
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Application Number | Priority Date | Filing Date | Title |
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JP2017128208A JP6948855B2 (ja) | 2017-06-30 | 2017-06-30 | パワー半導体装置及びそれを用いた電力変換装置 |
PCT/JP2018/019581 WO2019003718A1 (ja) | 2017-06-30 | 2018-05-22 | パワー半導体装置及びそれを用いた電力変換装置 |
US16/627,081 US11232994B2 (en) | 2017-06-30 | 2018-05-22 | Power semiconductor device having a distance regulation portion and power conversion apparatus including the same |
DE112018002625.6T DE112018002625T5 (de) | 2017-06-30 | 2018-05-22 | Leistungshalbleitervorrichtung und Leistungsumsetzungseinrichtung, die diese enthält |
CN201880039030.XA CN110771027B (zh) | 2017-06-30 | 2018-05-22 | 功率半导体装置及使用该装置的电力转换装置 |
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JP2017128208A JP6948855B2 (ja) | 2017-06-30 | 2017-06-30 | パワー半導体装置及びそれを用いた電力変換装置 |
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US20220130735A1 (en) * | 2020-10-23 | 2022-04-28 | GM Global Technology Operations LLC | Package for power semiconductor device and method of manufacturing the same |
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JP2012257369A (ja) * | 2011-06-08 | 2012-12-27 | Hitachi Automotive Systems Ltd | パワーモジュールおよびそれを用いた電力変換装置 |
JP2017011922A (ja) * | 2015-06-24 | 2017-01-12 | トヨタ自動車株式会社 | 電力変換装置 |
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US8188461B2 (en) * | 2005-05-31 | 2012-05-29 | Semiconductor Energy Laboratory Co., Ltd. | Organic memory device |
JP4434181B2 (ja) * | 2006-07-21 | 2010-03-17 | 株式会社日立製作所 | 電力変換装置 |
US7800219B2 (en) * | 2008-01-02 | 2010-09-21 | Fairchild Semiconductor Corporation | High-power semiconductor die packages with integrated heat-sink capability and methods of manufacturing the same |
US7763970B2 (en) * | 2008-02-27 | 2010-07-27 | Infineon Technologies Ag | Power module |
US8264035B2 (en) * | 2010-03-26 | 2012-09-11 | Force Mos Technology Co., Ltd. | Avalanche capability improvement in power semiconductor devices |
US20130175704A1 (en) * | 2012-01-05 | 2013-07-11 | Ixys Corporation | Discrete power transistor package having solderless dbc to leadframe attach |
WO2017119226A1 (ja) * | 2016-01-05 | 2017-07-13 | 日立オートモティブシステムズ株式会社 | パワー半導体装置 |
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US11232994B2 (en) | 2022-01-25 |
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