JP2011233606A - パワーモジュール - Google Patents
パワーモジュール Download PDFInfo
- Publication number
- JP2011233606A JP2011233606A JP2010100468A JP2010100468A JP2011233606A JP 2011233606 A JP2011233606 A JP 2011233606A JP 2010100468 A JP2010100468 A JP 2010100468A JP 2010100468 A JP2010100468 A JP 2010100468A JP 2011233606 A JP2011233606 A JP 2011233606A
- Authority
- JP
- Japan
- Prior art keywords
- heat radiating
- sealing body
- radiating plate
- power module
- module
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000007789 sealing Methods 0.000 claims abstract description 143
- 239000004020 conductor Substances 0.000 claims abstract description 93
- 239000004065 semiconductor Substances 0.000 claims abstract description 43
- 229910000679 solder Inorganic materials 0.000 claims abstract description 13
- 239000003566 sealing material Substances 0.000 claims abstract description 7
- 238000003825 pressing Methods 0.000 claims description 9
- 230000017525 heat dissipation Effects 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 238000013459 approach Methods 0.000 claims 1
- 239000003990 capacitor Substances 0.000 description 108
- 239000003507 refrigerant Substances 0.000 description 38
- 238000001816 cooling Methods 0.000 description 35
- 229920005989 resin Polymers 0.000 description 31
- 239000011347 resin Substances 0.000 description 31
- 238000000034 method Methods 0.000 description 27
- 230000008569 process Effects 0.000 description 26
- 238000006243 chemical reaction Methods 0.000 description 24
- 230000005540 biological transmission Effects 0.000 description 21
- 229910052751 metal Inorganic materials 0.000 description 20
- 239000002184 metal Substances 0.000 description 20
- 238000003860 storage Methods 0.000 description 18
- 238000010586 diagram Methods 0.000 description 15
- 238000003466 welding Methods 0.000 description 10
- 230000000694 effects Effects 0.000 description 9
- 238000003780 insertion Methods 0.000 description 8
- 230000037431 insertion Effects 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 239000002826 coolant Substances 0.000 description 6
- 230000006872 improvement Effects 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 238000009413 insulation Methods 0.000 description 5
- 230000007246 mechanism Effects 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000001514 detection method Methods 0.000 description 4
- 239000000945 filler Substances 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 238000005266 casting Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 230000020169 heat generation Effects 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 230000000630 rising effect Effects 0.000 description 3
- 230000001360 synchronised effect Effects 0.000 description 3
- 238000004804 winding Methods 0.000 description 3
- 239000004734 Polyphenylene sulfide Substances 0.000 description 2
- 230000005856 abnormality Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 230000013011 mating Effects 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229920001707 polybutylene terephthalate Polymers 0.000 description 2
- 229920000069 polyphenylene sulfide Polymers 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 230000035882 stress Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910000962 AlSiC Inorganic materials 0.000 description 1
- 229910000789 Aluminium-silicon alloy Inorganic materials 0.000 description 1
- 229910001111 Fine metal Inorganic materials 0.000 description 1
- 229920000106 Liquid crystal polymer Polymers 0.000 description 1
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 235000013372 meat Nutrition 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 239000000088 plastic resin Substances 0.000 description 1
- -1 polybutylene terephthalate Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001172 regenerating effect Effects 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3675—Cooling facilitated by shape of device characterised by the shape of the housing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
- H01L23/4093—Snap-on arrangements, e.g. clips
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
- H01L23/433—Auxiliary members in containers characterised by their shape, e.g. pistons
- H01L23/4334—Auxiliary members in encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
- H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K7/00—Constructional details common to different types of electric apparatus
- H05K7/20—Modifications to facilitate cooling, ventilating, or heating
- H05K7/2089—Modifications to facilitate cooling, ventilating, or heating for power electronics, e.g. for inverters for controlling motor
- H05K7/209—Heat transfer by conduction from internal heat source to heat radiating structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/83801—Soldering or alloying
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
- H01L2224/848—Bonding techniques
- H01L2224/84801—Soldering or alloying
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/162—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits the devices being mounted on two or more different substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/30107—Inductance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Thermal Sciences (AREA)
- Inverter Devices (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
【解決手段】半導体素子の一方の電極面とはんだを介して接続される第1導体板と、前記半導体素子と前記第1導体板を封止するための封止材と、を有する封止体と、前記封止体を収納するためのケースと、を備え、前記ケースは、前記封止体の一方の面と対向する第1放熱板と、前記封止体の一方の面とは反対側の他方の面と対向する第2放熱板と、前記第1放熱板と前記第2放熱板を接続する中間部材とにより構成され、前記中間部材には、厚さを前記第1放熱板の厚さより小さく、かつ前記第1放熱板よりも弾性変形し易く、さらに前記第1放熱板を囲むように形成された第1薄肉部を有し、前記封止体は、前記第1薄肉部に生じる弾性力によって前記第1放熱板を介して前記第2放熱板に押圧されて固定される。
【選択図】 図8
Description
302 モジュール一次封止体
303 厚さ
304 モジュールケース
304A 薄肉部
304B フランジ
305 フィン
306 挿入口
307A 第1放熱体
307B 第2放熱体
308 枠体
309,310,312 内壁間距離
311 固定部材
313,314 凹部
315,316,318,319 導体板
315B,316B,318A,319A 露出面
321 交流端子
325L,325U 信号端子
333 絶縁シート
334 第1突起部
335 第2突起部
336,341 距離
337 幅
338 溝
339 第1突出部
340 第2突出部
342 角
343 放熱面
345A 第1突出面
345B 第2突出面
346A 第1凹部
346B 第2凹部
347,352 第1辺
348 第一封止樹脂
351 第二封止樹脂
353 第2辺
364 凸部
370,371,372,373,374,375 モジュールケース
380,381 モジュール一次封止体
Claims (13)
- 半導体素子と、前記半導体素子の一方の電極面とはんだを介して接続される第1導体板と、前記半導体素子と前記第1導体板を封止するための封止材と、を有する封止体と、
前記封止体を収納するためのケースと、を備え、
前記ケースは、前記封止体の一方の面と対向する第1放熱板と、前記封止体の一方の面とは反対側の他方の面と対向する第2放熱板と、前記第1放熱板と前記第2放熱板を接続する中間部材とにより構成され、
前記中間部材には、厚さを前記第1放熱板の厚さより小さく、かつ前記第1放熱板よりも弾性変形し易く、さらに前記第1放熱板を囲むように形成された第1薄肉部を有し、
前記封止体は、前記第1薄肉部に生じる弾性力によって前記第1放熱板を介して前記第2放熱板に押圧されて固定されるパワーモジュール。 - 請求項1に記載したパワーモジュールであって、
前記第1放熱板の前記封止体と対向する側の面は、前記第1薄肉部の前記ケース内部側の面と同一面となるように形成されるパワーモジュール。 - 請求項1に記載したパワーモジュールであって、
前記第1放熱板及び前記第2放熱板にはピンフィンが形成されるパワーモジュール。 - 請求項1に記載したパワーモジュールであって、
前記第1放熱板及び前記第2放熱板には直線型のフィンが形成されるパワーモジュール。 - 請求項1に記載したパワーモジュールであって、
前記中間部材には、厚さを前記第2放熱板の厚さより小さく、かつ前記第2放熱板よりも弾性変形し易く、さらに前記第2放熱板を囲むように形成された第2薄肉部を有し、
前記封止体は、前記第1薄肉部に生じる弾性力によって前記第1放熱板を介して前記第2放熱板に押圧され、かつ前記第2薄肉部に生じる弾性力によって前記第2放熱板を介して前記第2放熱板に押圧されて固定されるパワーモジュール。 - 請求項1に記載したパワーモジュールであって、
前記中間部材には、厚さを前記第1薄肉部の厚さより大きく、かつ前記第2放熱板を囲むように形成され、さらに前記第1放熱板及び前記封止体を介して生じる前記第1薄肉部の弾性力を受けても変形しない剛性を有する保持部を形成するパワーモジュール。 - 請求項6に記載したパワーモジュールであって、
前記第2放熱板が配置された側の前記ケースの内壁には、前記封止体の側部と接触する第1突起部を形成するパワーモジュール。 - 請求項1に記載したパワーモジュールであって、
前記封止体は、
前記半導体素子の他方の電極面とはんだを介して接続される第2導体板を備え、
当該封止体の一方の面には底部に前記第1導体板を露出させた第1凹部が形成され、かつ当該封止体の一方の面とは反対側の他方の面には底部に前記第2導体板を露出させた第2凹部が形成され、
前記第1放熱板は前記第1凹部に嵌合され、かつ前記第2放熱板は前記第1凹部に嵌合されるパワーモジュール。 - 請求項8に記載したパワーモジュールであって、
前記第1導体板を露出面と対向し、かつ前記第1凹部内に納められる第1絶縁シートと、
前記第2導体板を露出面と対向し、かつ前記第2凹部内に納められる第2絶縁シートと、を備えるパワーモジュール。 - 請求項8に記載したパワーモジュールであって、
前記ケースは、前記封止体を挿入するための開口部を形成し、
前記半導体素子の電極面と垂直方向から投影した場合に、
前記第1凹部は、当該第1凹部の投影部が前記ケースの前記開口部に近い側の第1辺の長さが、当該第1辺と対向する第2辺の長さよりも長くなるように形成され、
前記第1放熱板は、当該第1放熱板の投影部が前記第1凹部の投影部と重なるように形成されるパワーモジュール。 - 請求項10に記載したパワーモジュールであって、
前記第1放熱板は、当該第1放熱板の投影部が前記ケースの前記開口部に近い側の第1辺の長さが、当該第1辺と対向する第2辺の長さよりも長くなるように形成されるパワーモジュール。 - 半導体素子と、前記半導体素子の電極面とはんだを介して接続される導体板と、前記半導体素子と前記導体板を封止するための封止材と、を有する封止体と、
前記封止体の一方の面と対向する第1放熱板と、前記封止体の一方の面とは反対側の他方の面と対向する第2放熱板と、前記第1放熱板と前記第2放熱板を接続しかつ前記封止体を挿入するための開口を形成する中間部材とを有するケースと、を備えるパワーモジュールの製造方法であって、
前記第1放熱板の対向面と前記第2放熱板の対向面との距離をDと定義し、かつ前記封止体の厚さをTと定義した場合に、
前記Dが前記Tよりも小さくなるように形成された前記ケースを、前記Dが前記Tよりも大きいD1となるように当該ケースの前記中間部材の一部を弾性変形させる第1工程と、
前記ケースの開口から前記封止体を挿入する第2工程と、
前記Dが前記D1から前記Tに近づくように、前記第1工程における前記中間部材の一部を弾性変形させるための加圧力を解除する第3工程と、を有するパワーモジュールの製造方法。 - 半導体素子と、前記半導体素子の電極面とはんだを介して接続される導体板と、前記半導体素子と前記導体板を封止し、かつ一方の面には第1凹部を形成し、さらに一方の面とは反対側の他方の面には第2凹部を形成する封止材と、を有する封止体と、
前記封止体の一方の面と対向しかつ前記第1凹部に嵌合される第1放熱板と、前記封止体の一方の面とは反対側の他方の面と対向かつ前記第2凹部に嵌合される第2放熱板と、前記第1放熱板と前記第2放熱板を接続しかつ前記封止体を挿入するための開口を形成する中間部材とを有するケースと、を備えるパワーモジュールの製造方法であって、
前記第1放熱板の対向面と前記第2放熱板の対向面との距離をDと定義し、かつ前記封止体の前記第1凹部の底部と前記第2凹部の底部との距離をT1と定義し、前記封止体の厚さをT2と定義した場合に、
前記Dが前記T1よりも小さくなるように形成された前記ケースを、前記Dが前記T2よりも大きいD1となるように、前記ケースの開口から挿入される前記封止体の押付力によって、当該ケースの前記中間部材の一部を弾性変形させる第1工程と、
前記第1放熱板を前記封止体の前記第1凹部に嵌合させ、かつ前記第2放熱板を前記封止体の前記第2凹部に嵌合させる第2工程と、を有するパワーモジュールの製造方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010100468A JP5557585B2 (ja) | 2010-04-26 | 2010-04-26 | パワーモジュール |
PCT/JP2011/060165 WO2011136222A1 (ja) | 2010-04-26 | 2011-04-26 | パワーモジュールおよびパワーモジュール製造方法 |
US13/640,512 US8659130B2 (en) | 2010-04-26 | 2011-04-26 | Power module and power module manufacturing method |
CN201180021058.9A CN102859682B (zh) | 2010-04-26 | 2011-04-26 | 功率模块和功率模块制造方法 |
EP11775003.4A EP2565918B1 (en) | 2010-04-26 | 2011-04-26 | Power module and method for manufacturing power module |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010100468A JP5557585B2 (ja) | 2010-04-26 | 2010-04-26 | パワーモジュール |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011233606A true JP2011233606A (ja) | 2011-11-17 |
JP5557585B2 JP5557585B2 (ja) | 2014-07-23 |
Family
ID=44861520
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010100468A Active JP5557585B2 (ja) | 2010-04-26 | 2010-04-26 | パワーモジュール |
Country Status (5)
Country | Link |
---|---|
US (1) | US8659130B2 (ja) |
EP (1) | EP2565918B1 (ja) |
JP (1) | JP5557585B2 (ja) |
CN (1) | CN102859682B (ja) |
WO (1) | WO2011136222A1 (ja) |
Cited By (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013080747A1 (ja) * | 2011-11-28 | 2013-06-06 | 日立オートモティブシステムズ株式会社 | 機電一体型の電動駆動装置 |
WO2013145881A1 (ja) * | 2012-03-30 | 2013-10-03 | 日立オートモティブシステムズ株式会社 | パワー半導体モジュール |
WO2014041893A1 (ja) * | 2012-09-14 | 2014-03-20 | 日立オートモティブシステムズ株式会社 | 電力変換装置 |
JP2014057484A (ja) * | 2012-09-14 | 2014-03-27 | Hitachi Automotive Systems Ltd | 電力変換装置 |
JP2014068449A (ja) * | 2012-09-25 | 2014-04-17 | Denso Corp | 電力変換装置 |
JP2014087124A (ja) * | 2012-10-22 | 2014-05-12 | Hitachi Automotive Systems Ltd | 電力変換装置 |
CN104170085A (zh) * | 2012-03-28 | 2014-11-26 | 富士电机株式会社 | 半导体装置 |
US9006784B2 (en) | 2013-03-14 | 2015-04-14 | Toyota Jidosha Kabushiki Kaisha | Semiconductor device and manufacturing method thereof |
US20150245523A1 (en) * | 2012-08-09 | 2015-08-27 | Hitachi Automotive System, Ltd. | Power Module |
JP2015216842A (ja) * | 2015-07-31 | 2015-12-03 | 日立オートモティブシステムズ株式会社 | 電力変換装置 |
US9241429B2 (en) | 2011-06-08 | 2016-01-19 | Hitachi Automotive Systems, Ltd. | Power module and power conversion apparatus using same |
US9312211B2 (en) | 2012-03-07 | 2016-04-12 | Toyota Jidosha Kabushiki Kaisha | Semiconductor device and manufacturing method thereof |
JP2016059148A (ja) * | 2014-09-09 | 2016-04-21 | 日立オートモティブシステムズ株式会社 | 電力変換装置 |
US9379083B2 (en) | 2012-03-28 | 2016-06-28 | Fuji Electric Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
US9385061B2 (en) | 2012-03-28 | 2016-07-05 | Fuji Electric Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
JP2016154442A (ja) * | 2016-04-20 | 2016-08-25 | 日立オートモティブシステムズ株式会社 | 電力変換装置 |
US9504154B2 (en) | 2013-06-04 | 2016-11-22 | Fuji Electric Co., Ltd. | Semiconductor device |
JP2017045778A (ja) * | 2015-08-25 | 2017-03-02 | 株式会社日立製作所 | 発熱体の固定構造、電力変換ユニットおよび電力変換装置 |
US9912248B2 (en) | 2014-08-07 | 2018-03-06 | Hitachi Automotive Systems, Ltd. | Power module |
WO2018159209A1 (ja) * | 2017-02-28 | 2018-09-07 | 日立オートモティブシステムズ株式会社 | パワー半導体装置 |
WO2019003718A1 (ja) * | 2017-06-30 | 2019-01-03 | 日立オートモティブシステムズ株式会社 | パワー半導体装置及びそれを用いた電力変換装置 |
Families Citing this family (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5581131B2 (ja) * | 2010-06-30 | 2014-08-27 | 日立オートモティブシステムズ株式会社 | パワーモジュール及びそれを用いた電力変換装置 |
JP5520889B2 (ja) * | 2011-06-24 | 2014-06-11 | 日立オートモティブシステムズ株式会社 | パワー半導体モジュール及びそれを用いた電力変換装置 |
CN103023279B (zh) * | 2011-09-27 | 2015-05-13 | 株式会社京浜 | 半导体控制装置 |
US9048721B2 (en) * | 2011-09-27 | 2015-06-02 | Keihin Corporation | Semiconductor device |
DE112013003222B4 (de) * | 2012-06-29 | 2021-08-19 | Denso Corporation | Halbleitervorrichtung und Halbleitervorrichtungsverbindungsstruktur |
JP2014063930A (ja) * | 2012-09-21 | 2014-04-10 | Hitachi Automotive Systems Ltd | 電子制御装置 |
KR101337542B1 (ko) * | 2013-09-13 | 2013-12-06 | 국방과학연구소 | 전기차량의 전기추진시스템 |
JP6221542B2 (ja) | 2013-09-16 | 2017-11-01 | 株式会社デンソー | 半導体装置 |
WO2015053140A1 (ja) * | 2013-10-07 | 2015-04-16 | 日立オートモティブシステムズ株式会社 | 電力変換装置 |
DE112014004770B4 (de) * | 2013-10-17 | 2022-10-13 | Wolfspeed, Inc. | Hochspannungs-Leistungs-Chipmodul |
DE102014104194B4 (de) * | 2014-03-26 | 2021-02-25 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbleitereinrichtung |
JP5929958B2 (ja) * | 2014-05-07 | 2016-06-08 | 株式会社デンソー | 電子装置 |
JP6345265B2 (ja) * | 2014-10-29 | 2018-06-20 | 日立オートモティブシステムズ株式会社 | 電子機器及び電子機器の製造方法 |
JP1533022S (ja) * | 2015-03-18 | 2015-09-07 | ||
USD759589S1 (en) * | 2015-03-18 | 2016-06-21 | Hitachi Automotive Systems, Ltd. | Power module for power inverter |
US9839146B2 (en) | 2015-10-20 | 2017-12-05 | Cree, Inc. | High voltage power module |
CN106655806B (zh) * | 2015-10-29 | 2019-02-26 | 台达电子企业管理(上海)有限公司 | 电源转换装置 |
CN105895608B (zh) * | 2016-05-03 | 2018-07-20 | 扬州国扬电子有限公司 | 一种电极包绝缘层的功率模块 |
KR101982044B1 (ko) | 2016-08-31 | 2019-05-24 | 삼성전기주식회사 | 팬-아웃 반도체 패키지 |
JP6635901B2 (ja) * | 2016-09-21 | 2020-01-29 | 本田技研工業株式会社 | 電力変換装置 |
DE102016120778B4 (de) | 2016-10-31 | 2024-01-25 | Infineon Technologies Ag | Baugruppe mit vertikal beabstandeten, teilweise verkapselten Kontaktstrukturen |
JP6710163B2 (ja) * | 2017-01-12 | 2020-06-17 | 日立オートモティブシステムズ株式会社 | パワー半導体装置 |
US10090279B2 (en) | 2017-03-03 | 2018-10-02 | Semiconductor Components Industries, Llc | Stray inductance reduction in packaged semiconductor devices and modules |
USD908632S1 (en) | 2018-09-17 | 2021-01-26 | Cree Fayetteville, Inc. | Power module |
US11031379B2 (en) | 2019-09-04 | 2021-06-08 | Semiconductor Components Industries, Llc | Stray inductance reduction in packaged semiconductor devices |
TWI733348B (zh) * | 2020-02-27 | 2021-07-11 | 大陸商光寶電子(廣州)有限公司 | 電晶體散熱模組及其組裝方法 |
CN113314481B (zh) | 2020-02-27 | 2023-01-24 | 光宝电子(广州)有限公司 | 晶体管散热模块及其组装方法 |
US11652091B2 (en) * | 2020-06-19 | 2023-05-16 | Abb Schweiz Ag | Solid state switching device including nested control electronics |
US20210400815A1 (en) * | 2020-06-19 | 2021-12-23 | Abb Schweiz Ag | Solid state switching device including heat sinks and control electronics construction |
EP3958661A3 (en) * | 2020-08-19 | 2022-03-09 | TVS Motor Company Limited | Electronic assembly |
DE102022116921A1 (de) | 2022-07-07 | 2024-01-18 | Eberspächer Catem Gmbh & Co. Kg | Bauteil einer elektrischen Heizvorrichtung und elektrische Heizvorrichtung |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005175163A (ja) * | 2003-12-10 | 2005-06-30 | Toyota Motor Corp | 半導体モジュールの冷却構造 |
JP2008166333A (ja) * | 2006-12-27 | 2008-07-17 | Denso Corp | 半導体装置およびその製造方法 |
JP2008193867A (ja) * | 2007-02-07 | 2008-08-21 | Hitachi Ltd | 電力変換装置 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6703707B1 (en) * | 1999-11-24 | 2004-03-09 | Denso Corporation | Semiconductor device having radiation structure |
US6349035B1 (en) * | 2000-09-29 | 2002-02-19 | Compaq Information Technologies Group, L.P. | Method and apparatus for tooless mating of liquid cooled cold plate with tapered interposer heat sink |
JP3910383B2 (ja) * | 2001-07-17 | 2007-04-25 | 株式会社日立製作所 | パワーモジュールおよびインバータ |
CN100421594C (zh) * | 2002-10-02 | 2008-10-01 | 爱丽丝有限公司 | 套的紧固方法及其装置 |
JP4158738B2 (ja) * | 2004-04-20 | 2008-10-01 | 株式会社デンソー | 半導体モジュール実装構造、カード状半導体モジュール及びカード状半導体モジュール密着用受熱部材 |
JP4379339B2 (ja) * | 2005-01-19 | 2009-12-09 | トヨタ自動車株式会社 | 半導体冷却装置 |
JP4979909B2 (ja) | 2005-08-19 | 2012-07-18 | 株式会社日立製作所 | 電力変換装置 |
JP4564937B2 (ja) * | 2006-04-27 | 2010-10-20 | 日立オートモティブシステムズ株式会社 | 電気回路装置及び電気回路モジュール並びに電力変換装置 |
JP4403166B2 (ja) * | 2006-11-06 | 2010-01-20 | 株式会社日立製作所 | パワーモジュールおよび電力変換装置 |
JP5227532B2 (ja) * | 2007-04-02 | 2013-07-03 | 日立オートモティブシステムズ株式会社 | インバータ回路用の半導体モジュール |
JP4580997B2 (ja) * | 2008-03-11 | 2010-11-17 | 日立オートモティブシステムズ株式会社 | 電力変換装置 |
JP5067267B2 (ja) * | 2008-06-05 | 2012-11-07 | 三菱電機株式会社 | 樹脂封止型半導体装置とその製造方法 |
US7919854B2 (en) * | 2008-08-15 | 2011-04-05 | Infineon Technologies Ag | Semiconductor module with two cooling surfaces and method |
JP5002568B2 (ja) * | 2008-10-29 | 2012-08-15 | 日立オートモティブシステムズ株式会社 | 電力変換装置 |
JP5557441B2 (ja) * | 2008-10-31 | 2014-07-23 | 日立オートモティブシステムズ株式会社 | 電力変換装置および電動車両 |
JP5492447B2 (ja) * | 2009-04-28 | 2014-05-14 | 日立オートモティブシステムズ株式会社 | パワーモジュール |
USD651565S1 (en) * | 2009-12-11 | 2012-01-03 | Hitachi Automotive Systems, Ltd. | Portion of power module for power inverter |
USD651170S1 (en) * | 2009-12-11 | 2011-12-27 | Hitachi Automotive Systems, Ltd. | Portion of a power module for power inverter |
JP5380376B2 (ja) * | 2010-06-21 | 2014-01-08 | 日立オートモティブシステムズ株式会社 | パワー半導体装置 |
JP5427745B2 (ja) * | 2010-09-30 | 2014-02-26 | 日立オートモティブシステムズ株式会社 | パワー半導体モジュール及びその製造方法 |
-
2010
- 2010-04-26 JP JP2010100468A patent/JP5557585B2/ja active Active
-
2011
- 2011-04-26 WO PCT/JP2011/060165 patent/WO2011136222A1/ja active Application Filing
- 2011-04-26 EP EP11775003.4A patent/EP2565918B1/en active Active
- 2011-04-26 US US13/640,512 patent/US8659130B2/en active Active
- 2011-04-26 CN CN201180021058.9A patent/CN102859682B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005175163A (ja) * | 2003-12-10 | 2005-06-30 | Toyota Motor Corp | 半導体モジュールの冷却構造 |
JP2008166333A (ja) * | 2006-12-27 | 2008-07-17 | Denso Corp | 半導体装置およびその製造方法 |
JP2008193867A (ja) * | 2007-02-07 | 2008-08-21 | Hitachi Ltd | 電力変換装置 |
Cited By (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9241429B2 (en) | 2011-06-08 | 2016-01-19 | Hitachi Automotive Systems, Ltd. | Power module and power conversion apparatus using same |
WO2013080747A1 (ja) * | 2011-11-28 | 2013-06-06 | 日立オートモティブシステムズ株式会社 | 機電一体型の電動駆動装置 |
JP2013115903A (ja) * | 2011-11-28 | 2013-06-10 | Hitachi Automotive Systems Ltd | 機電一体型の電動駆動装置 |
US9312211B2 (en) | 2012-03-07 | 2016-04-12 | Toyota Jidosha Kabushiki Kaisha | Semiconductor device and manufacturing method thereof |
CN104170085A (zh) * | 2012-03-28 | 2014-11-26 | 富士电机株式会社 | 半导体装置 |
US9385061B2 (en) | 2012-03-28 | 2016-07-05 | Fuji Electric Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
US9379083B2 (en) | 2012-03-28 | 2016-06-28 | Fuji Electric Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
US9312192B2 (en) | 2012-03-28 | 2016-04-12 | Fuji Electric Co., Ltd. | Semiconductor device |
EP2804212A4 (en) * | 2012-03-28 | 2015-12-09 | Fuji Electric Co Ltd | SEMICONDUCTOR DEVICE |
CN104170085B (zh) * | 2012-03-28 | 2017-05-10 | 富士电机株式会社 | 半导体装置 |
CN104160504B (zh) * | 2012-03-28 | 2017-05-17 | 富士电机株式会社 | 半导体装置和半导体装置的制造方法 |
US9474191B2 (en) | 2012-03-30 | 2016-10-18 | Hitachi Automotive Systems, Ltd. | Power semiconductor module |
JP2013211942A (ja) * | 2012-03-30 | 2013-10-10 | Hitachi Automotive Systems Ltd | パワー半導体モジュール |
WO2013145881A1 (ja) * | 2012-03-30 | 2013-10-03 | 日立オートモティブシステムズ株式会社 | パワー半導体モジュール |
US9497873B2 (en) * | 2012-08-09 | 2016-11-15 | Hitachi Automotive Systems, Ltd. | Power module including first and second sealing resins |
US20150245523A1 (en) * | 2012-08-09 | 2015-08-27 | Hitachi Automotive System, Ltd. | Power Module |
JP2014057485A (ja) * | 2012-09-14 | 2014-03-27 | Hitachi Automotive Systems Ltd | 電力変換装置 |
CN104620487A (zh) * | 2012-09-14 | 2015-05-13 | 日立汽车系统株式会社 | 电力转换装置 |
US10291148B2 (en) | 2012-09-14 | 2019-05-14 | Hitachi Automotive Systems, Ltd. | Power conversion apparatus |
JP2014057484A (ja) * | 2012-09-14 | 2014-03-27 | Hitachi Automotive Systems Ltd | 電力変換装置 |
WO2014041893A1 (ja) * | 2012-09-14 | 2014-03-20 | 日立オートモティブシステムズ株式会社 | 電力変換装置 |
JP2014068449A (ja) * | 2012-09-25 | 2014-04-17 | Denso Corp | 電力変換装置 |
JP2014087124A (ja) * | 2012-10-22 | 2014-05-12 | Hitachi Automotive Systems Ltd | 電力変換装置 |
US9006784B2 (en) | 2013-03-14 | 2015-04-14 | Toyota Jidosha Kabushiki Kaisha | Semiconductor device and manufacturing method thereof |
US9504154B2 (en) | 2013-06-04 | 2016-11-22 | Fuji Electric Co., Ltd. | Semiconductor device |
US9912248B2 (en) | 2014-08-07 | 2018-03-06 | Hitachi Automotive Systems, Ltd. | Power module |
JP2016059148A (ja) * | 2014-09-09 | 2016-04-21 | 日立オートモティブシステムズ株式会社 | 電力変換装置 |
JP2015216842A (ja) * | 2015-07-31 | 2015-12-03 | 日立オートモティブシステムズ株式会社 | 電力変換装置 |
JP2017045778A (ja) * | 2015-08-25 | 2017-03-02 | 株式会社日立製作所 | 発熱体の固定構造、電力変換ユニットおよび電力変換装置 |
JP2016154442A (ja) * | 2016-04-20 | 2016-08-25 | 日立オートモティブシステムズ株式会社 | 電力変換装置 |
WO2018159209A1 (ja) * | 2017-02-28 | 2018-09-07 | 日立オートモティブシステムズ株式会社 | パワー半導体装置 |
JP2018142620A (ja) * | 2017-02-28 | 2018-09-13 | 日立オートモティブシステムズ株式会社 | パワー半導体装置 |
WO2019003718A1 (ja) * | 2017-06-30 | 2019-01-03 | 日立オートモティブシステムズ株式会社 | パワー半導体装置及びそれを用いた電力変換装置 |
JP2019013079A (ja) * | 2017-06-30 | 2019-01-24 | 日立オートモティブシステムズ株式会社 | パワー半導体装置及びそれを用いた電力変換装置 |
US11232994B2 (en) | 2017-06-30 | 2022-01-25 | Hitachi Astemo, Ltd. | Power semiconductor device having a distance regulation portion and power conversion apparatus including the same |
Also Published As
Publication number | Publication date |
---|---|
US8659130B2 (en) | 2014-02-25 |
CN102859682B (zh) | 2015-11-25 |
EP2565918B1 (en) | 2018-12-05 |
JP5557585B2 (ja) | 2014-07-23 |
EP2565918A4 (en) | 2018-01-24 |
CN102859682A (zh) | 2013-01-02 |
EP2565918A1 (en) | 2013-03-06 |
WO2011136222A1 (ja) | 2011-11-03 |
US20130062751A1 (en) | 2013-03-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5557585B2 (ja) | パワーモジュール | |
JP5422466B2 (ja) | 電力変換装置 | |
JP5422468B2 (ja) | 電力変換装置 | |
JP5506749B2 (ja) | 電力変換装置 | |
JP5973026B2 (ja) | パワー半導体装置 | |
JP5624875B2 (ja) | 電力変換装置 | |
JP5591396B2 (ja) | 半導体モジュール、および半導体モジュールの製造方法 | |
JP5581131B2 (ja) | パワーモジュール及びそれを用いた電力変換装置 | |
JP5634429B2 (ja) | パワー半導体モジュール | |
JP5455888B2 (ja) | 車両用電力変換装置 | |
JP5506741B2 (ja) | 電力変換装置 | |
JP5879238B2 (ja) | パワー半導体モジュール | |
WO2011162241A1 (ja) | 電力変換装置 | |
WO2011125780A1 (ja) | パワーモジュール、およびパワーモジュールを備えた電力変換装置 | |
JP5378293B2 (ja) | パワーモジュール及びそれを用いた電力変換装置 | |
JP5978324B2 (ja) | 電力変換装置 | |
JP5568511B2 (ja) | 電力用変換装置 | |
JP5687786B2 (ja) | 電力変換装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20120803 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120803 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20140318 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140326 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20140507 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20140603 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5557585 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
S533 | Written request for registration of change of name |
Free format text: JAPANESE INTERMEDIATE CODE: R313533 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |