JP2018537888A5 - - Google Patents
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- Publication number
- JP2018537888A5 JP2018537888A5 JP2018520170A JP2018520170A JP2018537888A5 JP 2018537888 A5 JP2018537888 A5 JP 2018537888A5 JP 2018520170 A JP2018520170 A JP 2018520170A JP 2018520170 A JP2018520170 A JP 2018520170A JP 2018537888 A5 JP2018537888 A5 JP 2018537888A5
- Authority
- JP
- Japan
- Prior art keywords
- composite structure
- wave device
- acoustic wave
- functional layer
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000002131 composite material Substances 0.000 claims 24
- 239000010410 layer Substances 0.000 claims 21
- 239000002346 layers by function Substances 0.000 claims 19
- 239000000758 substrate Substances 0.000 claims 10
- 238000004519 manufacturing process Methods 0.000 claims 8
- 229910052751 metal Inorganic materials 0.000 claims 8
- 239000000463 material Substances 0.000 claims 6
- 239000002184 metal Substances 0.000 claims 5
- 238000010438 heat treatment Methods 0.000 claims 4
- 238000000034 method Methods 0.000 claims 4
- 238000000354 decomposition reaction Methods 0.000 claims 3
- 239000011521 glass Substances 0.000 claims 2
- 229910052594 sapphire Inorganic materials 0.000 claims 2
- 239000010980 sapphire Substances 0.000 claims 2
- 239000004065 semiconductor Substances 0.000 claims 2
- 229910052710 silicon Inorganic materials 0.000 claims 2
- 239000010703 silicon Substances 0.000 claims 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims 2
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 claims 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims 1
- 229910013641 LiNbO 3 Inorganic materials 0.000 claims 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR1559994A FR3042647B1 (fr) | 2015-10-20 | 2015-10-20 | Structure composite et procede de fabrication associe |
| FR1559994 | 2015-10-20 | ||
| PCT/FR2016/052675 WO2017068270A1 (fr) | 2015-10-20 | 2016-10-17 | Structure composite et procédé de fabrication associé |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2018537888A JP2018537888A (ja) | 2018-12-20 |
| JP2018537888A5 true JP2018537888A5 (https=) | 2019-11-28 |
| JP6923518B2 JP6923518B2 (ja) | 2021-08-18 |
Family
ID=54708030
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018520170A Active JP6923518B2 (ja) | 2015-10-20 | 2016-10-17 | 複合構造 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US12603629B2 (https=) |
| EP (1) | EP3365927B1 (https=) |
| JP (1) | JP6923518B2 (https=) |
| KR (1) | KR102671257B1 (https=) |
| CN (2) | CN114512595A (https=) |
| FR (1) | FR3042647B1 (https=) |
| SG (1) | SG11201803341QA (https=) |
| WO (1) | WO2017068270A1 (https=) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR3068508B1 (fr) * | 2017-06-30 | 2019-07-26 | Soitec | Procede de transfert d'une couche mince sur un substrat support presentant des coefficients de dilatation thermique differents |
| FR3076126A1 (fr) * | 2017-12-26 | 2019-06-28 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Procede de realisation d'un resonateur acoustique a ondes de volume a capacite parasite reduite |
| FR3079346B1 (fr) * | 2018-03-26 | 2020-05-29 | Soitec | Procede de fabrication d'un substrat donneur pour le transfert d'une couche piezoelectrique, et procede de transfert d'une telle couche piezoelectrique |
| EP3948357A4 (en) | 2019-03-29 | 2022-11-02 | Shenzhen Xpectvision Technology Co., Ltd. | SEMICONDUCTOR X-RAY DETECTOR |
| US11606078B2 (en) | 2019-07-18 | 2023-03-14 | Skyworks Solutions, Inc. | Acoustic wave resonator with rotated and tilted interdigital transducer electrode |
| US11750172B2 (en) | 2019-08-21 | 2023-09-05 | Skyworks Solutions, Inc. | Multilayer piezoelectric substrate |
| US11722122B2 (en) | 2019-11-22 | 2023-08-08 | Skyworks Solutions, Inc. | Multilayer piezoelectric substrate with high density electrode |
| CN111883644B (zh) * | 2020-07-23 | 2021-04-13 | 中国科学院上海微系统与信息技术研究所 | 一种异质压电薄膜结构及其制备方法 |
| GB2598665B (en) * | 2020-09-04 | 2025-07-23 | Skyworks Solutions Inc | Multi-layer piezoelectric substrate with controllable delta temperature coefficient of frequency |
| EP3989299B1 (en) * | 2020-10-26 | 2025-08-06 | Université de Franche-Comté | Piezoelectric device comprising flexible single crystalline piezoelectric linbo3 and/or litao3 films integrated on flexible substrate and methods for producing the same |
| US12562711B2 (en) | 2021-07-15 | 2026-02-24 | Skyworks Solutions, Inc. | Wafer level package having enhanced thermal dissipation |
| US12525951B2 (en) | 2021-10-01 | 2026-01-13 | Skyworks Solutions, Inc. | Surface acoustic wave device having a trapezoidal electrode |
| US20230208385A1 (en) | 2021-12-28 | 2023-06-29 | Skyworks Solutions, Inc. | Acoustic wave device with tilted interdigital transducer electrode |
| US12483226B2 (en) | 2021-12-29 | 2025-11-25 | Skyworks Solutions, Inc. | Acoustic wave device with tilted multilayer interdigital transducer electrode |
| US12470199B2 (en) | 2022-01-13 | 2025-11-11 | Skyworks Solutions, Inc. | Acoustic wave device with vertically mass loaded multi-layer interdigital transducer electrode for transverse mode suppression |
| US20230344411A1 (en) | 2022-04-15 | 2023-10-26 | Skyworks Solutions, Inc. | Multiplexer with dies of different acoustic velocity |
Family Cites Families (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW219354B (en) * | 1993-05-31 | 1994-01-21 | Ind Tech Res Inst | Strengthening of multi-layer ceramic/glass articles |
| JPH10297931A (ja) | 1997-04-24 | 1998-11-10 | Matsushita Electric Ind Co Ltd | 複合圧電基板の製造方法 |
| TW449937B (en) * | 1999-02-26 | 2001-08-11 | Matsushita Electronics Corp | Semiconductor device and the manufacturing method thereof |
| FR2816445B1 (fr) * | 2000-11-06 | 2003-07-25 | Commissariat Energie Atomique | Procede de fabrication d'une structure empilee comprenant une couche mince adherant a un substrat cible |
| JP3815424B2 (ja) * | 2002-11-08 | 2006-08-30 | 株式会社村田製作所 | 弾性境界波装置 |
| FR2856192B1 (fr) * | 2003-06-11 | 2005-07-29 | Soitec Silicon On Insulator | Procede de realisation de structure heterogene et structure obtenue par un tel procede |
| US7164222B2 (en) * | 2003-06-26 | 2007-01-16 | Intel Corporation | Film bulk acoustic resonator (FBAR) with high thermal conductivity |
| KR100850861B1 (ko) * | 2004-01-19 | 2008-08-06 | 가부시키가이샤 무라타 세이사쿠쇼 | 탄성 경계파 장치 |
| CN101416570B (zh) * | 2006-06-02 | 2012-05-09 | 株式会社村田制作所 | 多层陶瓷基板及其制造方法以及电子器件 |
| US7608986B2 (en) * | 2006-10-02 | 2009-10-27 | Seiko Epson Corporation | Quartz crystal resonator |
| JP4894861B2 (ja) * | 2006-12-25 | 2012-03-14 | 株式会社村田製作所 | 弾性境界波装置 |
| US7408286B1 (en) * | 2007-01-17 | 2008-08-05 | Rf Micro Devices, Inc. | Piezoelectric substrate for a saw device |
| JP5104761B2 (ja) | 2007-04-09 | 2012-12-19 | 株式会社村田製作所 | セラミック基板およびその製造方法 |
| JP2009124696A (ja) * | 2007-10-26 | 2009-06-04 | Panasonic Electric Works Co Ltd | 共振装置 |
| JP5029699B2 (ja) | 2007-11-30 | 2012-09-19 | 株式会社村田製作所 | セラミック複合多層基板及びその製造方法並びに電子部品 |
| JP4460612B2 (ja) | 2008-02-08 | 2010-05-12 | 富士通メディアデバイス株式会社 | 弾性表面波デバイス及びその製造方法 |
| WO2009139272A1 (ja) * | 2008-05-15 | 2009-11-19 | 株式会社村田製作所 | 多層セラミック基板およびその製造方法 |
| FR2942911B1 (fr) | 2009-03-09 | 2011-05-13 | Soitec Silicon On Insulator | Procede de realisation d'une heterostructure avec adaptation locale de coefficient de dilatation thermique |
| TWI635632B (zh) * | 2013-02-19 | 2018-09-11 | 日本碍子股份有限公司 | 複合基板、彈性波裝置及彈性波裝置的製法 |
| JP6242597B2 (ja) | 2013-06-03 | 2017-12-06 | 太陽誘電株式会社 | 弾性波デバイス及びその製造方法 |
| CN104979440B (zh) * | 2014-04-10 | 2019-01-18 | 传感器电子技术股份有限公司 | 复合衬底 |
| EP3196952B1 (en) * | 2016-01-21 | 2019-06-19 | AT & S Austria Technologie & Systemtechnik Aktiengesellschaft | Mems piezoelectric transducer formed at a pcb support structure |
-
2015
- 2015-10-20 FR FR1559994A patent/FR3042647B1/fr active Active
-
2016
- 2016-10-17 CN CN202210146142.3A patent/CN114512595A/zh active Pending
- 2016-10-17 SG SG11201803341QA patent/SG11201803341QA/en unknown
- 2016-10-17 KR KR1020187014265A patent/KR102671257B1/ko active Active
- 2016-10-17 WO PCT/FR2016/052675 patent/WO2017068270A1/fr not_active Ceased
- 2016-10-17 EP EP16798236.2A patent/EP3365927B1/fr active Active
- 2016-10-17 JP JP2018520170A patent/JP6923518B2/ja active Active
- 2016-10-17 CN CN201680065643.1A patent/CN108271425A/zh active Pending
- 2016-10-17 US US15/769,698 patent/US12603629B2/en active Active
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