JP2018534863A5 - - Google Patents
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- Publication number
- JP2018534863A5 JP2018534863A5 JP2018520188A JP2018520188A JP2018534863A5 JP 2018534863 A5 JP2018534863 A5 JP 2018534863A5 JP 2018520188 A JP2018520188 A JP 2018520188A JP 2018520188 A JP2018520188 A JP 2018520188A JP 2018534863 A5 JP2018534863 A5 JP 2018534863A5
- Authority
- JP
- Japan
- Prior art keywords
- thickness
- hybrid structure
- support substrate
- manufacturing
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims 18
- 239000010410 layer Substances 0.000 claims 10
- 238000004519 manufacturing process Methods 0.000 claims 9
- 239000000463 material Substances 0.000 claims 5
- 238000000034 method Methods 0.000 claims 4
- 238000000137 annealing Methods 0.000 claims 3
- 230000035945 sensitivity Effects 0.000 claims 2
- 238000000926 separation method Methods 0.000 claims 2
- 229910052710 silicon Inorganic materials 0.000 claims 2
- 239000010703 silicon Substances 0.000 claims 2
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 claims 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims 1
- 229910013641 LiNbO 3 Inorganic materials 0.000 claims 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims 1
- 239000000853 adhesive Substances 0.000 claims 1
- 230000001070 adhesive effect Effects 0.000 claims 1
- 230000015556 catabolic process Effects 0.000 claims 1
- 238000006731 degradation reaction Methods 0.000 claims 1
- 239000011521 glass Substances 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims 1
- 229910052594 sapphire Inorganic materials 0.000 claims 1
- 239000010980 sapphire Substances 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
- 239000002344 surface layer Substances 0.000 claims 1
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021191041A JP2022043057A (ja) | 2015-10-20 | 2021-11-25 | ハイブリッド構造 |
| JP2023213109A JP7668864B2 (ja) | 2015-10-20 | 2023-12-18 | ハイブリッド構造 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR1559993 | 2015-10-20 | ||
| FR1559993A FR3042649B1 (fr) | 2015-10-20 | 2015-10-20 | Procede de fabrication d'une structure hybride |
| PCT/FR2016/052674 WO2017068269A1 (fr) | 2015-10-20 | 2016-10-17 | Procédé de fabrication d'une structure hybride |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021191041A Division JP2022043057A (ja) | 2015-10-20 | 2021-11-25 | ハイブリッド構造 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2018534863A JP2018534863A (ja) | 2018-11-22 |
| JP2018534863A5 true JP2018534863A5 (https=) | 2019-11-28 |
| JP6985260B2 JP6985260B2 (ja) | 2021-12-22 |
Family
ID=54848787
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018520188A Active JP6985260B2 (ja) | 2015-10-20 | 2016-10-17 | ハイブリッド構造を製造するための方法 |
| JP2021191041A Pending JP2022043057A (ja) | 2015-10-20 | 2021-11-25 | ハイブリッド構造 |
| JP2023213109A Active JP7668864B2 (ja) | 2015-10-20 | 2023-12-18 | ハイブリッド構造 |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021191041A Pending JP2022043057A (ja) | 2015-10-20 | 2021-11-25 | ハイブリッド構造 |
| JP2023213109A Active JP7668864B2 (ja) | 2015-10-20 | 2023-12-18 | ハイブリッド構造 |
Country Status (8)
| Country | Link |
|---|---|
| US (3) | US11349065B2 (https=) |
| EP (1) | EP3365929B1 (https=) |
| JP (3) | JP6985260B2 (https=) |
| KR (1) | KR102639433B1 (https=) |
| CN (1) | CN108292699B (https=) |
| FR (1) | FR3042649B1 (https=) |
| SG (1) | SG11201803333RA (https=) |
| WO (1) | WO2017068269A1 (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR3042649B1 (fr) | 2015-10-20 | 2019-06-21 | Soitec | Procede de fabrication d'une structure hybride |
| JP7103528B2 (ja) * | 2019-09-27 | 2022-07-20 | 株式会社村田製作所 | 弾性波装置 |
Family Cites Families (31)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2848116B2 (ja) * | 1992-05-26 | 1999-01-20 | 松下電器産業株式会社 | 水晶素板の加工方法 |
| US5759753A (en) * | 1995-07-19 | 1998-06-02 | Matsushita Electric Industrial Co., Ltd. | Piezoelectric device and method of manufacturing the same |
| FR2816445B1 (fr) * | 2000-11-06 | 2003-07-25 | Commissariat Energie Atomique | Procede de fabrication d'une structure empilee comprenant une couche mince adherant a un substrat cible |
| US20020158947A1 (en) * | 2001-04-27 | 2002-10-31 | Isaku Kanno | Piezoelectric element, method for manufacturing piezoelectric element, and ink jet head and ink jet recording apparatus having piezoelectric element |
| JP2004186868A (ja) | 2002-12-02 | 2004-07-02 | Fujitsu Media Device Kk | 弾性表面波素子、それを有する送信フィルタ及び受信フィルタ、並びにそれらを有するデュプレクサ |
| FR2858461B1 (fr) * | 2003-07-30 | 2005-11-04 | Soitec Silicon On Insulator | Realisation d'une structure comprenant une couche protegeant contre des traitements chimiques |
| US7601271B2 (en) * | 2005-11-28 | 2009-10-13 | S.O.I.Tec Silicon On Insulator Technologies | Process and equipment for bonding by molecular adhesion |
| US20080203137A1 (en) * | 2007-02-28 | 2008-08-28 | International Business Machines Corporation | Substrate bonding methods and system including monitoring |
| FR2926671B1 (fr) * | 2008-01-17 | 2010-04-02 | Soitec Silicon On Insulator | Procede de traitement de defauts lors de collage de plaques |
| JP4821834B2 (ja) | 2008-10-31 | 2011-11-24 | 株式会社村田製作所 | 圧電性複合基板の製造方法 |
| FR2938702B1 (fr) * | 2008-11-19 | 2011-03-04 | Soitec Silicon On Insulator | Preparation de surface d'un substrat saphir pour la realisation d'heterostructures |
| US8644451B2 (en) | 2009-03-27 | 2014-02-04 | Shozo Aoki | X-ray generating apparatus and inspection apparatus using the same therein |
| JP5359615B2 (ja) * | 2009-07-02 | 2013-12-04 | 株式会社村田製作所 | 複合基板の製造方法 |
| FR2949606B1 (fr) * | 2009-08-26 | 2011-10-28 | Commissariat Energie Atomique | Procede de detachement par fracture d'un film mince de silicium mettant en oeuvre une triple implantation |
| CN102652354B (zh) * | 2009-12-15 | 2015-02-18 | 索泰克公司 | 用于重复利用衬底的处理 |
| FR2954585B1 (fr) * | 2009-12-23 | 2012-03-02 | Soitec Silicon Insulator Technologies | Procede de realisation d'une heterostructure avec minimisation de contrainte |
| WO2011139852A2 (en) * | 2010-04-29 | 2011-11-10 | Skyline Solar, Inc. | Thin film coating pinning arrangement |
| CN103262410B (zh) * | 2010-12-24 | 2016-08-10 | 株式会社村田制作所 | 弹性波装置及其制造方法 |
| JP5796316B2 (ja) * | 2011-03-22 | 2015-10-21 | 株式会社村田製作所 | 圧電デバイスの製造方法 |
| CN104365019B (zh) * | 2012-06-13 | 2017-08-25 | 日本碍子株式会社 | 复合基板 |
| KR101636220B1 (ko) * | 2012-07-12 | 2016-07-04 | 엔지케이 인슐레이터 엘티디 | 복합 기판, 압전 디바이스 및 복합 기판의 제법 |
| WO2014027538A1 (ja) * | 2012-08-17 | 2014-02-20 | 日本碍子株式会社 | 複合基板,弾性表面波デバイス及び複合基板の製造方法 |
| WO2014077213A1 (ja) * | 2012-11-14 | 2014-05-22 | 日本碍子株式会社 | 複合基板 |
| JP2014147054A (ja) | 2013-01-30 | 2014-08-14 | Sumitomo Electric Ind Ltd | 圧電基板及び弾性表面波素子 |
| TWI635632B (zh) | 2013-02-19 | 2018-09-11 | 日本碍子股份有限公司 | 複合基板、彈性波裝置及彈性波裝置的製法 |
| CN104272592B (zh) * | 2013-03-27 | 2016-12-07 | 日本碍子株式会社 | 复合基板及弹性波装置 |
| DE112014003430B4 (de) * | 2013-07-25 | 2025-10-16 | Ngk Ceramic Device Co.,Ltd., | Kompositsubstrat und Verfahren zum Herstellen desselben |
| JP2015073082A (ja) * | 2013-09-03 | 2015-04-16 | 住友電気工業株式会社 | 積層体の設計方法 |
| US10103317B2 (en) * | 2015-01-05 | 2018-10-16 | Inston, Inc. | Systems and methods for implementing efficient magnetoelectric junctions |
| FR3042649B1 (fr) * | 2015-10-20 | 2019-06-21 | Soitec | Procede de fabrication d'une structure hybride |
| EP3196952B1 (en) * | 2016-01-21 | 2019-06-19 | AT & S Austria Technologie & Systemtechnik Aktiengesellschaft | Mems piezoelectric transducer formed at a pcb support structure |
-
2015
- 2015-10-20 FR FR1559993A patent/FR3042649B1/fr not_active Expired - Fee Related
-
2016
- 2016-10-17 SG SG11201803333RA patent/SG11201803333RA/en unknown
- 2016-10-17 US US15/769,690 patent/US11349065B2/en active Active
- 2016-10-17 CN CN201680067866.1A patent/CN108292699B/zh active Active
- 2016-10-17 KR KR1020187013180A patent/KR102639433B1/ko active Active
- 2016-10-17 EP EP16795121.9A patent/EP3365929B1/fr active Active
- 2016-10-17 JP JP2018520188A patent/JP6985260B2/ja active Active
- 2016-10-17 WO PCT/FR2016/052674 patent/WO2017068269A1/fr not_active Ceased
-
2021
- 2021-11-25 JP JP2021191041A patent/JP2022043057A/ja active Pending
-
2022
- 2022-05-16 US US17/663,569 patent/US11930710B2/en active Active
-
2023
- 2023-12-18 JP JP2023213109A patent/JP7668864B2/ja active Active
-
2024
- 2024-01-03 US US18/403,485 patent/US12490656B2/en active Active
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