Classifications

• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10N30/00—Piezoelectric or electrostrictive devices
  • H10N30/01—Manufacture or treatment
  • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
  • H10N30/072—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
  • H10N30/073—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies by fusion of metals or by adhesives
• • H—ELECTRICITY
  • H03—ELECTRONIC CIRCUITRY
  • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
  • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
  • H03H9/02—Details
  • H03H9/02535—Details of surface acoustic wave devices
  • H03H9/02543—Characteristics of substrate, e.g. cutting angles
  • H03H9/02574—Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10N30/00—Piezoelectric or electrostrictive devices
  • H10N30/01—Manufacture or treatment
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10N30/00—Piezoelectric or electrostrictive devices
  • H10N30/01—Manufacture or treatment
  • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
  • H10N30/072—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10N30/00—Piezoelectric or electrostrictive devices
  • H10N30/50—Piezoelectric or electrostrictive devices having a stacked or multilayer structure
  • H10N30/508—Piezoelectric or electrostrictive devices having a stacked or multilayer structure adapted for alleviating internal stress, e.g. cracking control layers
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10N30/00—Piezoelectric or electrostrictive devices
  • H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
  • H10N30/706—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings characterised by the underlying bases, e.g. substrates
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10N30/00—Piezoelectric or electrostrictive devices
  • H10N30/80—Constructional details
  • H10N30/88—Mounts; Supports; Enclosures; Casings

Definitions

• the present invention relates to the field of manufacturing hybrid structures, in particular structures comprising a layer of piezoelectric material.
• hetero-structures comprising lithium tantalate (LiTaOs) arranged on a silicon substrate are of increasing interest: on the one hand, because they are compatible with standard microelectronics equipment and processes thanks to their silicon support substrate, offering growth opportunities and lower costs; on the other hand because they have technical advantages, such as less dependence on temperature, the frequency response of SAW devices as explained in the article by K.Hashimoto, M.Kadota and al., "Recent Development of Temperature Compensated SAW Devices," IEEE Ultrasound. Symp. 2011, pages 79 to 86, 2011.
• the LiTaOs / Si hetero-structures may, for example, be prepared from the molecular bonding assembly of two substrates of LiTaO 3 and Si, respectively.
• the holding of the bonding interface between the Li a03 layer and the Si support substrate is one of the important factors that manage the good mechanical strength of the structure in temperature and in particular beyond 200 ° C.
• the bonding interface can in particular be reinforced by applying a heat treatment in a temperature range around 200- 300 ° C.
• CTE coefficient of Thermal Expansion
• one solution is to transfer said layer by the Smart Cut® process, including the formation of a fragile plane buried in a LiTaC donor substrate> 3 by the introduction of light species such as hydrogen or helium, the direct bonding (by molecular adhesion) of this donor substrate onto a silicon support substrate , and the detachment at the level of the buried fragile plane so as to transfer a surface layer of LiTaC> 3 on Si. It is known that the surface layer after transfer still comprises defects and light species in its thickness.
• this layer it is therefore advantageous to cure this layer to perform an annealing in a suitable range of temperature: to allow the cure of defects and the evacuation of light species, but without damaging the qualities of the transferred thin layer or the mechanical strength of the hetero-structure.
• a suitable temperature range is between 400 ° and 600 ° C.
• hybrid structures or hetero-structures it is customary to carry out heat treatments having a high temperature when the surface layer disposed on the support substrate is as thin as possible, so as to limit stresses and deformations. (resulting in particular by a curvature of the substrate) in said hybrid structure.
• the maximum applicable temperature without damage decreases for example around 600 ° C.
• the maximum applicable temperature without damage decreases for example around 100-150 ° C.
• the Applicant used this knowledge state of the art: it applied the annealing temperature required to reinforce the interface of the bonding (ie 250 ° C) to the final hybrid structure (10 microns Li a03 over 625 microns Si), that is to say having the thinnest possible surface layer.
• the Applicant then observed unexpected results: a significant degradation of the layer by a so-called "buckling" phenomenon corresponding to the local buckling deformation of the LiTaO3 layer, rendering the hybrid structure unusable.
• An object of the invention is therefore to provide a method of manufacturing a hybrid structure overcoming the disadvantages of the prior art.
• An object of the invention is in particular to provide a method for applying a required heat treatment without damaging the hybrid structure.
• the invention relates to a method for manufacturing a hybrid structure comprising a useful layer of piezoelectric material having a useful thickness disposed on a support substrate having a support thickness and a coefficient of thermal expansion less than that of the useful layer, the method comprising:
• a step of providing a bonded structure comprising a piezoelectric material donor substrate and the support substrate, the bonded structure having a bonding interface between these two substrates;
• step d) a second step of thinning, after step c), the thinned layer to form the useful layer;
• the method being remarkable in that it comprises, prior to step b), a step a ') of determining a range of intermediate thicknesses avoiding degradation of the thinned structure (6') during the step c), the range being defined by a threshold thickness and a ceiling thickness, and the intermediate thickness of the thinned layer being chosen in this range.
• the manufacturing method according to the invention thus makes it possible to apply a heat treatment to an annealing temperature required to consolidate the bonding interface or to cure all or part of defects present in the thinned layer (which will become the useful layer), to a thinned structure for which the range of compatible thicknesses of the thinned layer has been previously determined.
• Said heat treatment is generally not applicable to the final hybrid structure, that is to say with the useful layer to its useful thickness, without generating damage to the useful layer, especially when unglued areas (bonding defects or pre-existing engraved patterns on the assembled faces of the substrates) are present at the bonding interface.
• the threshold thickness is determined from a first sensitivity model whose input parameters include the support thickness, the thermal expansion coefficients of the donor substrate and of the support substrate, the annealing temperature and a maximum size. unglued areas present at the bonding interface of the bonded structure;
• the ceiling thickness is determined from a second sensitivity model whose input parameters include the support thickness, the thermal expansion coefficients of the donor substrate and of the support substrate and the annealing temperature;
• the manufacturing process comprises, after step a ') and before step b), a step a' ') of recycling the bonded structure, when the determining step a') establishes the upper threshold thickness at ceiling thickness or ceiling thickness lower than the effective thickness;
• Recycling step a '' comprises a peeling at the bonding interface of the bonded structure
• Recycling step a '') comprises the reuse of the donor and support substrates resulting from the detachment for a new step a) of supplying a glued structure;
• the second thinning step d) may further comprise a step of thinning the support substrate
• the useful layer is composed of a material selected from the group: lithium tantalate (Li aOs), lithium niobate (Li bOs), aluminum nitride (AIN), zinc oxide (ZnO);
• the support substrate is composed of a material chosen from the group: silicon, III-V semiconductors, silicon carbide, glass, sapphire;
• the support substrate comprises one or more surface layers.
• the invention further relates to a hybrid structure comprising a useful layer of piezoelectric material of useful thickness less than 50 microns assembled to a support substrate having a coefficient of thermal expansion less than that of the useful layer, the hybrid structure being characterized in that a bonding interface between the useful layer and the support substrate has a bonding energy of greater than 1000 mJ / m 2 and at least one unbonded area whose size is between 1 and 1000 microns.
• FIGS. 1a to 1a show a method of manufacturing a hybrid structure according to the invention
• FIGS. 2a to 2c show three different configurations of thickness ranges, versus the useful thickness, resulting from a determination step according to the invention
• FIG. 3 shows different steps of the manufacturing method according to the invention.
• the invention relates to a method of manufacturing a hybrid structure 60 comprising a useful layer 20 of piezoelectric material disposed on a support substrate 1 having a support thickness and a coefficient of thermal expansion less than that of the useful layer 20 (FIG. .
• the method comprises a step a) of providing a bonded structure 6 comprising a donor substrate 2 of piezoelectric material and the support substrate 1.
• the bonded structure 6 has a bonding interface 5 between these two substrates 1,2 ( Figure la).
• the donor substrate 2 may be composed of a material chosen from the group: lithium tantalate (Li aOs), lithium niobate (Li bOs), aluminum nitride (AlN), zinc oxide ( ZnO).
• the support substrate may be composed of a material selected from the group: silicon, III-V semiconductors, silicon carbide, glass, sapphire.
• One and / or the other of the substrates 1,2 may optionally comprise components (all or part of microelectronic circuits) or etched patterns on their face to be assembled: the components may be formed of stacked layers of different natures and having patterns; the etched patterns may be formed by cavities intended to ensure a function in the final device produced on the hybrid structure 60.
• the assembly of the bonded structure 6 is advantageously made by molecular bonding between the donor substrate 2 and the substrate support 1.
• an intermediate layer such as a layer of silicon oxide, silicon nitride or other layer promoting molecular bonding, may be added to one or both substrates before assembly.
• the substrates 1, 2 are also subjected to steps of cleaning and / or surface activation before assembly, to promote the quality and energy of the bonding interface 5 formed after assembly.
• a zone localized at the bonding interface, at which the surfaces of the two substrates are not intimately in contact, with the exception of the unembossed peripheral ring at the edges of the surfaces, will be referred to as the "unglued zone".
• An "unbonded area” is typically surrounded by a glued area.
• An unbound area may be linked to a defect in bonding, for example due to the presence of a particle or other contamination (hydrocarbon or other) at the bonding interface 5 of the bonded structure 6. It may also be related to the presence of an engraved pattern or a local topography on the donor substrate 2 or the support substrate 1, due to the presence of components or cavities or laser marks (for example to ensure the traceability of the substrates) on their respective faces to be assembled.
• the method comprises a step b) corresponding to a first step of thinning the donor substrate 2 to form a thin layer 2 ', having an intermediate thickness, disposed on the support substrate 1; the assembly forming a thinned structure 6 '( Figure lb).
• the donor substrate 2 is thinned at its rear face 4, by techniques of mechanical thinning, mechano-chemical and / or chemical etching or by a Smart Cut® type process, well known to those skilled in the art .
• the donor substrate 2 can be thinned by "grinding" (mechanical thinning) and then by chemical mechanical polishing.
• This thinning step precedes a heat treatment step c) whose function may be to consolidate the bonding interface 5 or to cure defects in the thinned layer 2 'which will become the useful layer 20. It is therefore important that the step b) of thinning leads to obtaining a thinned structure 6 'compatible with the heat treatment required in the following step c).
• the manufacturing process is remarkable in that it comprises a step a '), prior to step b) of thinning, of determining a range of intermediate thicknesses for the thinned layer 2', aiming at preventing degradation of the thinned structure during step c) of heat treatment.
• Said fork is defined by a threshold thickness and a ceiling thickness, the intermediate thickness of the thinned layer 2 'is thus chosen in this range.
• the threshold thickness is determined from a first sensitivity model whose input parameters include the support thickness (of the support substrate 1), the thermal expansion coefficients of the donor substrate 2 and the support substrate 1, the temperature of annealing required in step c) heat treatment and a maximum size of unglued areas present at the bonding interface 5 of the bonded structure 6.
• the first model of sensitivity is established from an equation reflecting the relaxation of a thin layer in compression on a substrate.
• a phenomenon of relaxation of a thin layer such as "buckling" requires the presence of a non-bonded zone at the interface between the thin layer and the substrate.
• the critical constraint bU iing c k required to initiate the relaxation of the thin layer which is the local buckling deformation of said layer, can be expressed as:
• E 2 , V 2 are respectively the Young's modulus and the Poisson's ratio of the piezoelectric material constituting the thinned layer 2'; h 2 is the intermediate thickness and r is the maximum radius of the non-bonded areas present at the bonding interface 5 of the bonded structure 6.
• the size of the unbonded areas present at the bonding interface 5 may, for example, be determined imaging by white light or infra-red depending on the materials constituting the bonded structure 6, or by acoustic microscopy, particularly advantageous technique for detecting unglued areas of small size.
• the maximum radius of the areas not bonded to the bonding interface 5 (which may be related to bonding defects or to pre-existing patterns on one or the other of the assembled faces of the donor 2 and support 1 substrates) may thus be extracted for each bonded structure 6.
• the support thickness hi of the support substrate 1 as well as its mechanical characteristics (Ei, its Young's modulus); the required annealing temperature to be applied to the thinned structure 6 'during the heat treatment step c) is also known. It is therefore possible to express the normalized compression force p norm - q U will apply to the thinned layer 2 'during the heat treatment of step c):
• the threshold thickness corresponds to the intermediate thickness below which the "buckling" phenomenon has a high probability of appearing, taking into account the characteristics of the thinned structure 6 '(type of material constituting it, maximum size of zones unglued present at the bonding interface 5, thickness of the support substrate) and the annealing temperature to be applied during the heat treatment of step c).
• the "buckling" phenomenon can also be accompanied by an enlargement of the unbonded zone, preferably perpendicular to the crystallographic axes having the highest coefficient of expansion. This enlargement can be all the more important as the energy of the bonding interface 5 is low. The consolidation of the energy of the bonding interface 5, in a configuration avoiding the appearance of "buckling” is therefore all the more important.
• the first sensitivity model thus connects the threshold thickness to a set of characteristic parameters of the thinned structure 6 'and to the thermal stresses it must undergo.
• the ceiling thickness is determined from a second sensitivity model whose input parameters include the support thickness (of the support substrate 1), the thermal expansion coefficients of the donor substrate 2 and the support substrate 1 and the temperature annealing required in step c) heat treatment.
• the second sensitivity model is established from an equation representing the rupture of the material constituting the support substrate 1, constrained in extension in the thinned structure 6 'during a heat treatment.
• the elastic energy E stored in the support substrate 1, in the case of a thinned structure 6 'comprising a thinned layer 2' and a support substrate 1 of different nature and to which a heat treatment is applied, is expressed as follows:
• the rupture of the material constituting the support substrate 1 appears when the elastic energy E exceeds a critical value given by: ⁇ equ .8 ⁇ with Kic the tenacity of the material constituting the support substrate 1.
• the ceiling thickness corresponds to the intermediate thickness of the thinned layer 2 'above which the rupture of the support substrate 1 has a high probability of appearing, taking into account the characteristics of the thinned structure 6' (type of materials). component, thickness of the support substrate 1) and the annealing temperature to be applied during the heat treatment of step c).
• the second sensitivity model thus connects the ceiling thickness to a set of characteristic parameters of the thinned structure 6 'and to the thermal stresses it must undergo.
• a heterogeneous structure such that the thinned structure 6 'undergoes stresses and deformations when subjected to a heat treatment, due to the differential expansions of the two materials constituting it. It deforms by adopting a curvature that can lead to different failure modes: the breaking of the support substrate 1, the local buckling ("buckling") of the thinned layer 2 ', the formation of dislocations or sliding planes in the structure ( in particular in the thinned layer 2 '), the delamination at the edges of the thinned structure 6', etc.
• buckling local buckling
• the Applicant has found that in the case of thinned structures 6 'comprising a layer of piezoelectric material and a support substrate of a material having a lower coefficient of thermal expansion, the two dominant failure modes were on the one hand the breaking of the support substrate 1 (phenomenon of rupture of the material beyond the critical energy of rupture) and secondly, the local buckling, at the level of non-bonded zones, of the thinned layer 2 '(phenomenon of relaxation of a thin layer in compression, says "buckling").
• a thickness range defined by the determined threshold thickness and ceiling thickness is thus obtained, as illustrated in FIGS. 2a to 2c.
• the useful thickness of the expected useful layer 20 for the final hybrid structure 60 is less than the defined thickness range (FIG. 2a): it is in a fork case thicknesses compatible with the final structure envisaged.
• the manufacturing method according to the invention comprises, as mentioned above, step b) of thinning the donor substrate 2 to form the thinned layer 2 ', after the step a') of determining the thickness range compatible with .
• the intermediate thickness of the thinned layer 2 ' will then be chosen to be in said range, that is to say between the threshold thickness and the ceiling thickness.
• the method then comprises the step c) of heat treatment at the annealing temperature required for the thinned structure 6 '.
• this annealing temperature may vary between 200 ° C. and 600 ° C. depending on the type of hybrid structure expected and according to the objective of this heat treatment: consolidation of the bonding interface 5, cure of defects or exo- diffusion of light species in the thickness of the thinned layer 2 '(intended to become the useful layer 20), etc.
• the heat treatment may comprise an inlet and an outlet of the oven at a low temperature, for example 100 ° C., a ramp for raising and lowering temperature, for example between 0.5 and 5 ° / min, and a bearing at the temperature of annealing required, for example between 200 ° C and 600 ° C, for a period ranging from 30min to a few hours.
• the method comprises a step d) corresponding to a second step of thinning the thinned layer 2 'to form the useful layer 20 having a useful thickness, disposed on the support substrate 1; the assembly forming the final hybrid structure 60 (FIG.
• the layer 2 ' is thus thinned again, at its rear face 4, by techniques of mechanical thinning, mechano-chemical and / or chemical etching and / or thinning by the Smart Cut® process.
• the layer 2 ' can be thinned by mechano-chemical polishing sequences, followed by cleaning.
• the hybrid structure 20 thus formed can then be used for the elaboration of electronic devices, its properties (bonding energy of the bonding interface 5 and / or quality of the useful layer 20) having been improved by the realization of the method according to the invention.
• the steps of developing the devices do not require the application of heat treatments at a temperature as high as the annealing temperature of step c) of the process.
• the useful thickness of the expected useful layer 20 for the final hybrid structure 60 is within the defined thickness range (FIG. 2b); it is in a range of thicknesses compatible with the final structure envisaged.
• the manufacturing method according to the invention comprises, as mentioned above, step b) of thinning the donor substrate 2 to form the thinned layer 2 ', after step a').
• the intermediate thickness of the thinned layer 2 ' will advantageously be chosen so as to be in the range, and in particular, it will be chosen to be equal to or substantially greater than the effective thickness.
• the method then comprises the step c) of heat treatment at the annealing temperature required for the thinned structure 6 '.
• this annealing temperature may vary between 200 ° C. and 600 ° C. depending on the type of hybrid structure 60 expected and according to the objective of this heat treatment.
• step d) corresponding to a second step of thinning the thinned layer 2 'to form the useful layer 20 having a useful thickness, disposed on the support substrate 1; the assembly forming the final hybrid structure 60.
• step b) of thinning the thinned layer already brings the intermediate thickness substantially to the useful thickness.
• Step d) can thus consist essentially of a polishing step with a low removal ("touch polishing" according to the English terminology) and cleaning sequences, to improve the surface condition of the face 4 of the useful layer 20.
• the hybrid structure 20 thus formed can then be used for the development of electronic devices, in particular acoustic wave devices.
• the useful thickness of the useful layer 20 expected for the final hybrid structure 60 is greater than the defined thickness range (FIG. 2c), ie the useful thickness is greater than the ceiling thickness.
• FOG. 2c the defined thickness range
• the manufacturing method according to the invention then comprises a step a '') of recycling the glued structure 6.
• the step a '') consists in achieving the separation of the bonded structure 6 at the bonding interface 5 , leading to the separation of the donor substrate 2 and the support substrate 1. This detachment can be performed by inserting a bevel-shaped tool between the chamfered edges of the two donor and support 2 substrates 1 of the bonded structure 6.
• the recycling step a '') further comprises the reuse of the detached donor and support 1 substrates for a new step a) of providing a glued structure 6.
• the recycling step a '') can be advantage to use a support substrate 1 of greater thickness and provide a new bonded structure 6.
• This increase in support thickness will in particular increase the value of ceiling thickness, the objective being to find a crazy consistent thickness range that is to say with a ceiling thickness greater than the expected effective thickness.
• the second thinning step d) according to the method will also comprise, in this case, a thinning step of the rear face of the support substrate 1, so as to bring it back to the required support thickness for the final hybrid structure 60.
• This additional thinning step may consist of a mechanical, mechano-chemical or chemical thinning.
• the configuration in which the thickness range is incompatible with the expected hybrid structure may also be related to the fact that the annealing temperature is too high. We can then choose to reduce the annealing temperature to be applied in step c) heat treatment.
• the recycling step a '') can also be used to apply a different surface preparation (potentially potentially more complex or expensive but necessary in this case) to the substrates 1 and 2 before their assembly, allowing for example to promote the bonding energy after a heat treatment at a lower temperature.
• a new thickness range is then determined before continuing the process.
• the threshold thickness determined in step a ') is greater than the ceiling thickness determined at the same step (configuration not shown).
• the thickness range is also considered incompatible with the expected structure, since it does not exist (the thickness range being defined by a threshold thickness less than a ceiling thickness). It may be in this case that the maximum size of the unglued areas present at the bonding interface 5 is too large to allow a compatible thickness range.
• the manufacturing method according to the invention then comprises a step a '') of recycling the glued structure 6.
• the step a '') consists in achieving the separation of the bonded structure 6 at the bonding interface 5 , leading to the separation of the donor substrate 2 and of the support substrate 1. This detachment may be effected by applying a stress at the interface between the two donor and support 2 substrates 1 of the bonded structure 6.
• the recycling step a '' comprises the reuse of the donor substrate 2 and support 1 peeled off for a new step a) of providing a bonded structure 6. Assuming that the unglued zone of maximum size was related to a bonding defect, the recycling step has '') can make it possible to eliminate this defect by a new cleaning and a new preparation of the surfaces of the substrates 1,2 to be assembled.
• step a ' ') recycling can be used for example to use modify the assembly conditions to allow to subsequently limit the temperature required to apply in step c) and provide a new bonded structure 6.
• the manufacturing method according to the invention makes it possible to apply a heat treatment to an annealing temperature required to consolidate the bonding interface 5 or to cure defects in the thinned layer 2 '(which will become the useful layer 20), a thinned structure 6 'for which the range of compatible thicknesses for the thinned layer 2' has been previously determined.
• Said heat treatment is generally not applicable to the final hybrid structure 60 that is to say with the useful layer 20 to its useful thickness, without generating damage to the useful layer 20, especially when unglued areas (Paste defects or pre-existing engraved patterns on the assembled faces of the substrates 1, 2) are present at the bonding interface 5.
• step a ') of determining the range of compatible thicknesses makes it possible to identify when it is necessary to recycle the bonded structure 6, and before engaging the thinning stage b), it allows thus to increase the manufacturing yields.
• the invention also relates to a hybrid structure 60 comprising a useful layer 20 of piezoelectric material of useful thickness less than 50 microns assembled to a support substrate 1 having a coefficient of thermal expansion less than that of the useful layer 20 ( Figure 1a).
• the bonding interface 5 between the useful layer 20 and the support substrate 1 has a bonding energy greater than or equal to 1000 mJ / m 2 and at least one non-bonded area whose size is between 1 and 1000 microns.
• the useful layer 20 is composed of a material selected from the group: lithium tantalate (Li aOs), lithium niobate (LiNbOs), aluminum nitride (AIN), zinc oxide (ZnO), etc. For example, its thickness is between 0.1 micron and 50 microns.
• the support substrate 1 is composed of a material chosen from the group: silicon, III-V semiconductors, silicon carbide, glass, sapphire, etc. For example, its thickness is between 300 and 1000 microns.
• the support substrate may also comprise one or more surface layers of different natures.
• the support substrate may consist of a monocrystalline silicon substrate having a surface layer on the side of its side to be assembled, capable of trapping charges, in particular polycrystalline silicon,; it may also consist of an SOI substrate (silicon on insulator) whose surface layers are made of silicon oxide and silicon or an SOI substrate provided with a charge trapping layer under the oxide layer.
• SOI substrate silicon on insulator
• a supporting substrate 1 of silicon (Si) 150mm in diameter, 725 microns thick, has etched patterns spaced regularly over its entire face to assemble. These reasons may for example have a function of alignment marks or constitute cavities for the manufacture of suspended membranes or constitute electrical contacts in the final hybrid structure 60, on which the devices will be developed.
• the support substrate 1 also comprises an oxide layer on its face to be assembled. It is bonded by molecular bonding with a donor substrate 2 of lithium tantalate (LiTaOs) of the same diameter to provide the bonded structure 6.
• LiTaOs lithium tantalate
• a control step by acoustic microscopy makes it possible to detect and measure the non-bonded areas at the interface of collage 5, generated by the patterns. The maximum size of unglued areas corresponds to a radius r of 500 microns.
• the expected final hybrid structure 60 has a useful 10 micron layer and a 725 micron support substrate.
• the annealing temperature to be applied is 230.degree. C., in order to sufficiently consolidate the bonding interface 5 so that the hybrid structure 60 supports the subsequent steps of developing the acoustic wave devices.
• the thickness range obtained is compatible with the expected hybrid structure 60, the useful thickness being less than said range.
• Stage b) thinning consisting of a mechanical thinning followed by a chemical mechanical polishing and chemical cleaning, makes it possible to form a thinned layer 2 'whose intermediate thickness is 30 ⁇ m.
• the heat treatment of step c) is then carried out.
• the entry into the oven is at 100 ° C, the temperature rise ramp is 1 ° / min until a plateau at 230 ° C, for a period of 4 hours.
• a temperature ramp down to 1 ° / min is then operated up to 100 ° C before taking out the thinned structure 6 'of the oven.
• the thinned structure 6 'then undergoes a second step of thinning the thinned layer 2' to a thickness of 10 microns to form the useful layer 20.
• the hybrid structure 60 thus obtained is integrated and has a consolidated bonding interface 5 whose bonding energy is greater than or equal to 1000mJ / m 2 , a useful layer 20 incorporates no degradation associated with "buckling" phenomena. and this despite the presence of unglued areas at its interface, a size between 100 and 500 microns. Such a hybrid structure 60 can then be used for the development of acoustic wave devices.
• a support substrate 1 made of silicon (Si) having a diameter of 150 mm and a thickness of 725 microns and having an oxide layer on its face to be bonded is adhesively bonded to a donor substrate 2 made of lithium tantalate (Li aOs). diameter to provide the bonded structure 6.
• a control step by acoustic microscopy makes it possible to detect two bonding defects (unglued areas) at the bonding interface 5, the maximum size of which corresponds to a radius r of 700 microns.
• the expected final hybrid structure 60 has a useful 10 micron layer and a 725 micron support substrate.
• the annealing temperature to be applied is 250.degree. the purpose of sufficiently consolidate the bonding interface 5 so that the hybrid structure 60 supports the subsequent steps of development of acoustic wave devices.
• the thickness range obtained is not compatible with the expected hybrid structure 60, the threshold thickness being greater than the ceiling thickness.
• the recycling step a '') is then carried out, in order to reduce the maximum size of the gluing defects present at the gluing interface 5: the insertion of a tool in the form of a bevel at the level of the bonding interface 5 of the bonded structure 6 makes it possible to separate the donor 2 and support 1 substrates. A new cleaning and surface activation sequence of the two substrates is carried out before a new assembly, to provide a new bonded structure 6. A new acoustic microscopy control step makes it possible to detect ten defects at the bonding interface 5, the maximum size of which corresponds to a radius r of 150 microns.
• the thickness range obtained is now compatible with the expected hybrid structure 60, the threshold thickness being less than the ceiling thickness and the useful thickness being less than said range.
• Step b) of thinning consisting of a mechanical thinning followed by chemical mechanical polishing and chemical cleaning, allows forming a thinned layer 2 'whose intermediate thickness is 23 microns.
• the heat treatment of step c) is then carried out.
• the entry into the oven is at 70 ° C, the ramp temperature rise is 1 ° / min until a plateau at 250 ° C, lasting 4 hours.
• a temperature ramp down to 1 ° / min is then operated up to 100 ° C before removing the structure of the oven.
• the thinned structure 6 'then undergoes a second step of thinning the thinned layer 2' to a useful thickness of 10 microns to form the useful layer 20.
• the hybrid structure 60 thus obtained is integrated and has a consolidated bonding interface 5 whose bonding energy is greater than or equal to 1000mJ / m 2 , or even greater than 1500mJ / m 2 ; it also has a useful integrated layer having no degradation related to "buckling" phenomena, despite the presence of non-bonded areas at its interface of a size between 50 and 150 microns. Such a hybrid structure 60 can then be used for the development of acoustic wave devices.

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