SG11201803341QA - Composite structure and associated production method - Google Patents

Composite structure and associated production method

Info

Publication number
SG11201803341QA
SG11201803341QA SG11201803341QA SG11201803341QA SG11201803341QA SG 11201803341Q A SG11201803341Q A SG 11201803341QA SG 11201803341Q A SG11201803341Q A SG 11201803341QA SG 11201803341Q A SG11201803341Q A SG 11201803341QA SG 11201803341Q A SG11201803341Q A SG 11201803341QA
Authority
SG
Singapore
Prior art keywords
production method
composite structure
associated production
composite
production
Prior art date
Application number
SG11201803341QA
Inventor
Pascal Guenard
Ionut Radu
Didier Landru
Eric Desbonnets
Original Assignee
Soitec Silicon On Insulator
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec Silicon On Insulator filed Critical Soitec Silicon On Insulator
Publication of SG11201803341QA publication Critical patent/SG11201803341QA/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H10N30/853—Ceramic compositions
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/50—Piezoelectric or electrostrictive devices having a stacked or multilayer structure
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
    • H03H9/02031—Characteristics of piezoelectric layers, e.g. cutting angles consisting of ceramic
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02086—Means for compensation or elimination of undesirable effects
    • H03H9/02102—Means for compensation or elimination of undesirable effects of temperature influence
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02086—Means for compensation or elimination of undesirable effects
    • H03H9/02133—Means for compensation or elimination of undesirable effects of stress
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02543—Characteristics of substrate, e.g. cutting angles
    • H03H9/02574—Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders; Supports
    • H03H9/0504—Holders; Supports for bulk acoustic wave devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/05—Manufacture of multilayered piezoelectric or electrostrictive devices, or parts thereof, e.g. by stacking piezoelectric bodies and electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/072—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/101—Piezoelectric or electrostrictive devices with electrical and mechanical input and output, e.g. having combined actuator and sensor parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H10N30/853—Ceramic compositions
    • H10N30/8542—Alkali metal based oxides, e.g. lithium, sodium or potassium niobates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/88—Mounts; Supports; Enclosures; Casings
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
    • H03H2003/0407—Temperature coefficient

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
SG11201803341QA 2015-10-20 2016-10-17 Composite structure and associated production method SG11201803341QA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1559994A FR3042647B1 (en) 2015-10-20 2015-10-20 COMPOSITE STRUCTURE AND METHOD OF MANUFACTURING THE SAME
PCT/FR2016/052675 WO2017068270A1 (en) 2015-10-20 2016-10-17 Composite structure and associated production method

Publications (1)

Publication Number Publication Date
SG11201803341QA true SG11201803341QA (en) 2018-05-30

Family

ID=54708030

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201803341QA SG11201803341QA (en) 2015-10-20 2016-10-17 Composite structure and associated production method

Country Status (8)

Country Link
US (1) US20180316329A1 (en)
EP (1) EP3365927B1 (en)
JP (1) JP6923518B2 (en)
KR (1) KR102671257B1 (en)
CN (2) CN108271425A (en)
FR (1) FR3042647B1 (en)
SG (1) SG11201803341QA (en)
WO (1) WO2017068270A1 (en)

Families Citing this family (9)

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FR3068508B1 (en) * 2017-06-30 2019-07-26 Soitec METHOD OF TRANSFERRING A THIN LAYER TO A SUPPORT SUBSTRATE HAVING DIFFERENT THERMAL EXPANSION COEFFICIENTS
FR3076126A1 (en) * 2017-12-26 2019-06-28 Commissariat A L'energie Atomique Et Aux Energies Alternatives METHOD FOR PRODUCING ACOUSTIC RESONATOR WITH VOLUME VOLUME WITH REDUCED PARASITE CAPACITY
FR3079346B1 (en) * 2018-03-26 2020-05-29 Soitec METHOD FOR MANUFACTURING A DONOR SUBSTRATE FOR TRANSFERRING A PIEZOELECTRIC LAYER, AND METHOD FOR TRANSFERRING SUCH A PIEZOELECTRIC LAYER
EP3948357A4 (en) 2019-03-29 2022-11-02 Shenzhen Xpectvision Technology Co., Ltd. Semiconductor x-ray detector
US11750172B2 (en) 2019-08-21 2023-09-05 Skyworks Solutions, Inc. Multilayer piezoelectric substrate
US11722122B2 (en) 2019-11-22 2023-08-08 Skyworks Solutions, Inc. Multilayer piezoelectric substrate with high density electrode
CN111883644B (en) * 2020-07-23 2021-04-13 中国科学院上海微系统与信息技术研究所 Heterogeneous piezoelectric thin film structure and preparation method thereof
GB2598665A (en) * 2020-09-04 2022-03-09 Skyworks Solutions Inc Multi-layer piezoelectric substrate with controllable delta temperature coefficient of frequency
EP3989299A1 (en) * 2020-10-26 2022-04-27 Université de Franche-Comté Piezoelectric device comprising flexible single crystalline piezoelectric linbo3 and/or litao3 films integrated on flexible substrate and methods for producing the same

Family Cites Families (19)

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Publication number Priority date Publication date Assignee Title
TW219354B (en) * 1993-05-31 1994-01-21 Ind Tech Res Inst Strengthening of multi-layer ceramic/glass articles
JPH10297931A (en) * 1997-04-24 1998-11-10 Matsushita Electric Ind Co Ltd Production of composite piezoelectric substrate
TW449937B (en) * 1999-02-26 2001-08-11 Matsushita Electronics Corp Semiconductor device and the manufacturing method thereof
FR2816445B1 (en) * 2000-11-06 2003-07-25 Commissariat Energie Atomique METHOD FOR MANUFACTURING A STACKED STRUCTURE COMPRISING A THIN LAYER ADHERING TO A TARGET SUBSTRATE
JP3815424B2 (en) * 2002-11-08 2006-08-30 株式会社村田製作所 Boundary acoustic wave device
FR2856192B1 (en) * 2003-06-11 2005-07-29 Soitec Silicon On Insulator METHOD FOR PRODUCING HETEROGENEOUS STRUCTURE AND STRUCTURE OBTAINED BY SUCH A METHOD
KR100821483B1 (en) * 2004-01-19 2008-04-10 가부시키가이샤 무라타 세이사쿠쇼 Acoustic boundary wave device
KR101073873B1 (en) * 2006-06-02 2011-10-14 가부시키가이샤 무라타 세이사쿠쇼 Multilayer ceramic substrate, method for producing the same and electronic component
US7608986B2 (en) * 2006-10-02 2009-10-27 Seiko Epson Corporation Quartz crystal resonator
EP2104228A4 (en) * 2006-12-25 2014-10-08 Murata Manufacturing Co Elastic boundary-wave device
US7408286B1 (en) * 2007-01-17 2008-08-05 Rf Micro Devices, Inc. Piezoelectric substrate for a saw device
JP5104761B2 (en) * 2007-04-09 2012-12-19 株式会社村田製作所 Ceramic substrate and manufacturing method thereof
JP2009124696A (en) * 2007-10-26 2009-06-04 Panasonic Electric Works Co Ltd Resonance device
WO2009069398A1 (en) * 2007-11-30 2009-06-04 Murata Manufacturing Co., Ltd. Ceramic composite multilayer substrate, method for manufacturing ceramic composite multilayer substrate and electronic component
CN102027813A (en) * 2008-05-15 2011-04-20 株式会社村田制作所 Multilayer ceramic substrate and method for producing the same
FR2942911B1 (en) * 2009-03-09 2011-05-13 Soitec Silicon On Insulator METHOD FOR PRODUCING A HETEROSTRUCTURE WITH LOCAL ADAPTATION OF THERMAL EXPANSION COEFFICIENT
KR102094026B1 (en) * 2013-02-19 2020-03-27 엔지케이 인슐레이터 엘티디 Composite substrate, elastic wave device and method for manufacturing elastic wave device
JP6242597B2 (en) * 2013-06-03 2017-12-06 太陽誘電株式会社 Elastic wave device and manufacturing method thereof
US9691680B2 (en) * 2014-04-10 2017-06-27 Sensor Electronic Technology, Inc. Structured substrate

Also Published As

Publication number Publication date
JP6923518B2 (en) 2021-08-18
CN108271425A (en) 2018-07-10
US20180316329A1 (en) 2018-11-01
JP2018537888A (en) 2018-12-20
FR3042647B1 (en) 2017-12-01
EP3365927A1 (en) 2018-08-29
FR3042647A1 (en) 2017-04-21
KR20180074732A (en) 2018-07-03
KR102671257B1 (en) 2024-06-03
WO2017068270A1 (en) 2017-04-27
EP3365927B1 (en) 2021-03-24
CN114512595A (en) 2022-05-17

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