Classifications

• • H—ELECTRICITY
  • H03—ELECTRONIC CIRCUITRY
  • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
  • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
  • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
  • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
  • H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10N30/00—Piezoelectric or electrostrictive devices
  • H10N30/50—Piezoelectric or electrostrictive devices having a stacked or multilayer structure
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10N30/00—Piezoelectric or electrostrictive devices
  • H10N30/80—Constructional details
  • H10N30/85—Piezoelectric or electrostrictive active materials
  • H10N30/853—Ceramic compositions
• • H—ELECTRICITY
  • H03—ELECTRONIC CIRCUITRY
  • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
  • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
  • H03H9/02—Details
  • H03H9/02007—Details of bulk acoustic wave devices
  • H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
  • H03H9/02031—Characteristics of piezoelectric layers, e.g. cutting angles consisting of ceramic
• • H—ELECTRICITY
  • H03—ELECTRONIC CIRCUITRY
  • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
  • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
  • H03H9/02—Details
  • H03H9/02007—Details of bulk acoustic wave devices
  • H03H9/02086—Means for compensation or elimination of undesirable effects
  • H03H9/02102—Means for compensation or elimination of undesirable effects of temperature influence
• • H—ELECTRICITY
  • H03—ELECTRONIC CIRCUITRY
  • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
  • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
  • H03H9/02—Details
  • H03H9/02007—Details of bulk acoustic wave devices
  • H03H9/02086—Means for compensation or elimination of undesirable effects
  • H03H9/02133—Means for compensation or elimination of undesirable effects of stress
• • H—ELECTRICITY
  • H03—ELECTRONIC CIRCUITRY
  • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
  • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
  • H03H9/02—Details
  • H03H9/02535—Details of surface acoustic wave devices
  • H03H9/02543—Characteristics of substrate, e.g. cutting angles
  • H03H9/02574—Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate
• • H—ELECTRICITY
  • H03—ELECTRONIC CIRCUITRY
  • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
  • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
  • H03H9/02—Details
  • H03H9/05—Holders or supports
  • H03H9/0504—Holders or supports for bulk acoustic wave devices
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10N30/00—Piezoelectric or electrostrictive devices
  • H10N30/01—Manufacture or treatment
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10N30/00—Piezoelectric or electrostrictive devices
  • H10N30/01—Manufacture or treatment
  • H10N30/05—Manufacture of multilayered piezoelectric or electrostrictive devices, or parts thereof, e.g. by stacking piezoelectric bodies and electrodes
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10N30/00—Piezoelectric or electrostrictive devices
  • H10N30/01—Manufacture or treatment
  • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
  • H10N30/072—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10N30/00—Piezoelectric or electrostrictive devices
  • H10N30/101—Piezoelectric or electrostrictive devices with electrical and mechanical input and output, e.g. having combined actuator and sensor parts
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10N30/00—Piezoelectric or electrostrictive devices
  • H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10N30/00—Piezoelectric or electrostrictive devices
  • H10N30/80—Constructional details
  • H10N30/85—Piezoelectric or electrostrictive active materials
  • H10N30/853—Ceramic compositions
  • H10N30/8542—Alkali metal based oxides, e.g. lithium, sodium or potassium niobates
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10N30/00—Piezoelectric or electrostrictive devices
  • H10N30/80—Constructional details
  • H10N30/88—Mounts; Supports; Enclosures; Casings
• • H—ELECTRICITY
  • H03—ELECTRONIC CIRCUITRY
  • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
  • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
  • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
  • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
  • H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
  • H03H2003/0407—Temperature coefficient

Definitions

• the present invention relates to the field of composite structures and hetero structures. It relates in particular to composite structures for acoustic wave devices. BACKGROUND OF THE INVENTION
• hetero-structures comprising lithium tantalate (LiTaO3) arranged on a silicon substrate, are of increasing interest: on the one hand, because they are compatible with standard equipment and processes of microelectronics thanks to their silicon support substrate, on the other hand because they have technical advantages such as, for example, a lower temperature dependence of the frequency response of the SAW devices as explained in the article by K.Hashimoto, M.Kadota et al., "Recent development of temperature compensated SAW devices", IEEE Ultrasound. Symp. 2011, pages 79 to 86, 2011.
• the LiTaO 3 / Si hetero-structures may, for example, be prepared from the molecular bonding assembly of two LiTaO 3 and Si substrates, respectively.
• it is advantageous to it can be mounted at a temperature of at least 250 ° C to allow the use of materials and processes that ensure good performance of the devices.
• the holding of the bonding interface between the LiTaO 3 layer and the Si support substrate is one of the important factors that manage the good mechanical strength of the structure. temperature, especially at temperatures greater than or equal to 250 ° C.
• this layer it is therefore advantageous to cure this layer to anneal in a suitable range of temperature: to allow the cure of defects and the evacuation of light species without damaging the qualities of the thin layer transferred or the mechanical strength of the hetero -structure.
• a suitable temperature range would be chosen between 400 ° and 600 ° C.
• An object of the invention is therefore to provide a structure and a manufacturing method overcoming the disadvantages of the prior art.
• An object of the invention is in particular to provide a composite structure, comprising a useful layer disposed on a support at an interface, and capable of supporting thermal budgets high enough to reinforce this interface or at least partially cure the layer. superficial defects or to develop certain components.
• the invention relates to a composite structure for an acoustic wave device comprising a hetero structure including:
• a useful layer of piezoelectric material having a first and a second face, the first face being disposed at a first bonding interface on a support substrate having a coefficient of thermal expansion less than that of the useful layer;
• the composite structure is remarkable in that it comprises a functional layer whose entire surface is disposed at a second bonding interface on the second face of the useful layer and having a coefficient of thermal expansion less than that of the layer. useful.
• the composite structure according to the invention thus supports a temperature greater than a limit temperature beyond which the hetero structure degrades or breaks in the absence of the functional layer.
• the composite structure thus makes it possible to apply heat treatments required to consolidate the first bonding interface of the heterostructure or to cure the useful layer of defects; these heat treatments could not have been applied directly to the hetero-structure because of the significant difference in thermal expansion coefficients of the materials of the useful layer and the support substrate.
• the functional layer has a thickness greater than or equal to 10 microns
• the useful layer is composed of a material selected from the group: lithium tantalate (Li aOs), lithium niobate (Li bOs), aluminum nitride (AIN), zinc oxide (ZnO);
• the functional layer is composed of a material chosen from the group: silicon, III-V semiconductors, silicon carbide, glass, sapphire;
• the support substrate is composed of a material chosen from the group: silicon, III-V semiconductors, silicon carbide, glass, sapphire;
• the functional layer is composed of the same material as that of the support substrate;
• the adhesion energy of the first bonding interface between the useful layer and the support substrate of the heterostructure is greater than or equal to 1500 mJ / m 2 ;
• the adhesion energy of the second bonding interface between the functional layer and the hetero-structure is less than 1000 mJ / m2, to allow its dismounting;
• the functional layer comprises at least a first local opening allowing access to at least a first portion of the second face of the useful layer and said first portion of the second face of the useful layer comprises metallic elements forming a wave device acoustic, in particular a SAW device;
• the functional layer comprises at least a first local opening allowing access to at least a first portion of the second face of the useful layer
• the support substrate comprises at least a second local opening, at least partially facing the first local opening and allowing access to at least a second portion of the first face of the useful layer; said first and second portions respectively of the second and first faces of the useful layer comprise metallic elements forming an acoustic wave device, in particular a BAW device;
• the functional layer and / or the support substrate comprises (nt) metal contacts and / or electronic devices electrically connected to metal elements arranged on the useful layer.
• the invention furthermore relates to a method of manufacturing a composite structure for an acoustic wave device including a step of providing a hetero structure comprising a useful layer of piezoelectric material, having a first and a second face, the first face being disposed at a first bonding interface on a support substrate having a coefficient of thermal expansion less than that of the useful layer; the process is remarkable in that it comprises:
• An assembly step forming a second bonding interface between an entire surface of a functional layer and the second face of the useful layer to form a composite structure, the functional layer having a coefficient of thermal expansion less than that of the layer; useful ;
• a heat treatment step of the composite structure at a temperature above a limit temperature beyond which the hetero structure degrades or breaks in the absence of the functional layer.
• the assembly step comprises a step of setting the thickness of the functional layer, prior to the heat treatment step, to achieve a thickness of the functional layer greater than or equal to 10 microns; the temperature of the heat treatment step is greater than or equal to 250 ° C, in particular between 250 ° and 600 ° C;
• the manufacturing method comprises a step of removing the functional layer after the heat treatment step, by disassembly at the second bonding interface between the functional layer and the useful layer;
• the disassembly is performed by applying a mechanical stress at the second bonding interface of the composite structure
• the manufacturing method comprises a step of locally removing the functional layer to allow access to a first portion of the second face of the useful layer, and a step of producing acoustic wave devices comprising metal elements on said first part ;
• the manufacturing method further comprises a step of locally removing the support substrate to allow access to a second portion of the first face of the useful layer, and a step of producing acoustic wave devices comprising metal elements on said second part ;
• the manufacturing method further comprises a step of producing components on the functional layer and / or on the support substrate, and / or a step of electrical connection between metal elements arranged on the useful layer and metal contacts arranged on the layer. functional and / or on the support substrate.
• FIGS 4a to 4c show steps of the manufacturing method according to the invention of the composite structure.
• the invention relates to a composite structure 9 for an acoustic wave device comprising a hetero structure 5 (illustrated in FIG.
• the latter includes a useful layer 2 of piezoelectric material, having a first 3 and a second face 4, as shown in FIG. It also includes a support substrate 1 having a coefficient of thermal expansion less than that of the useful layer 2.
• the useful layer 2 is disposed along its first face 3 on the support substrate 1 (FIG. ).
• the useful layer 2 of the hetero-structure 5 may be composed of a material selected from the group: lithium tantalate (Li aOs), lithium niobate (LiNbOs), aluminum nitride (AIN), zinc oxide ( ZnO).
• the support substrate 1 of the hetero-structure 5 may be composed of a material selected from the group: silicon, III-V semiconductors, silicon carbide, glass, sapphire.
• the assembly of the useful layer 2 on the support substrate 1 is for example made by direct bonding by molecular adhesion.
• an additional layer (not shown), for example of silicon oxide, may be deposited on the support substrate 1 and / or on the first face 3 of the useful layer before assembly; this configuration may for example facilitate the bonding between the useful layer 2 and the support substrate 1.
• a hetero-structure 5 comprising a useful layer 2 made of piezoelectric material has a growing interest in the field of acoustic wave devices, in particular used for mobile phone applications and radio-frequency communications.
• acoustic wave devices on a hetero-structure 5 several steps are necessary, among which deposits of insulating and conductive layers, wet or dry etchings, heat treatments (in the range 150-250 ° C.).
• the Applicant has noticed that a good consolidation of the bonding interface between the useful layer 2 and the support substrate 1 facilitated the holding of the hetero-structure 5 during the steps of developing the devices, in particular the processing steps. thermal.
• the composite structure 9 according to the invention therefore has the particular object of enabling the reinforcement of the bonding energy of the interface between the useful layer 2 and the support substrate 1 (called the first bonding interface) of the hetero-structure. 5, for subsequent steps in device development.
• the composite structure 9 according to the invention thus comprises a functional layer 6, having two faces 7 and 8 ( Figure 1b).
• This layer 6 is assembled on the second face 4 of the useful layer 2, so that the entire surface of one of its faces 7,8 (in this case the face 7, in Figure 1c) is disposed on the second face 4 of the useful layer 2 (at a second bonding interface).
• the functional layer 6 also has a coefficient of thermal expansion less than that of the useful layer 2.
• the functional layer 6 may be composed of a material chosen from the group: silicon, III-V semiconductors, silicon carbide, glass, sapphire.
• the functional layer 6 may be composed of the same material as the support substrate 1.
• an intermediate layer (not shown) may be present between the functional layer 6 and the useful layer 2, for example made of silicon oxide, silicon nitride, etc.
• the intermediate layer may have been deposited on the second face 4 of the useful layer 2 and / or on the face 7 of the functional layer 6 before assembly.
• the composite structure 9 according to the invention is compatible with a heat treatment temperature higher than a limit temperature beyond which the hetero structure 5 degrades or breaks in the absence of the functional layer 6.
• CTE coefficient of thermal expansion
• the hetero structure 5 will degrade (cracking or breaking of the support substrate 1, separation of the useful layer 2 at its first face 3, dislocation or deformation of the useful layer 2) if it is subjected to a temperature above a limit temperature; this limit temperature is related to the difference in CTE between the useful layer 2 and the support substrate 1 and to the respective thicknesses of the useful layer 2 and the support substrate 1.
• the limit temperature is of the order of 150 ° C.
• the composite structure 9 according to the invention allows the application of a temperature above this limit temperature.
• the addition of a Si functional layer 6 of a thickness of 200 microns on the aforementioned hetero-structure example 5 allows the application of a heat treatment in the range 200-400 ° C.
• a heat treatment in this temperature range is advantageous for the consolidation of the first bonding interface between the useful layer 2 and the support substrate 1 of the hetero-structure 5 and makes it possible to achieve higher bonding energies than treatment below 150 ° C.
• a hetero-structure 5 comprising a very thin useful layer 2 of piezoelectric material may also be of interest in the field of acoustic wave devices, in particular BAW devices.
• One solution for producing such a hetero-structure is to transfer said useful layer 2 by the Smart Cut® process, including the formation of a fragile plane buried in a donor substrate of piezoelectric material by introduction of light species. such as hydrogen or helium, the direct bonding of this donor substrate to a support substrate 1 made of silicon, and the detachment at the buried fragile plane so as to transfer a surface layer of piezoelectric material to Si. that the surface layer after transfer still comprises defects and light species in its thickness, which can in particular degrade its piezoelectric characteristics.
• the suitable temperature range would be chosen between 400 ° and 600 ° C, ie below the temperature of Curie of the material.
• the composite structure 9 according to the invention also has the object of allowing the application of a healing annealing to the useful layer 2 of the hetero structure 5, in order to restore its piezoelectric characteristics.
• the temperature limit is of the order of 400 ° C.
• the composite structure 9 according to the invention allows the application of a temperature above this limit temperature.
• the addition of a Si functional layer 6 with a thickness of 50-100 microns on the aforementioned hetero-structure 5 allows the application of a heat treatment in the range 500-600 ° C.
• the functional layer 6 will have a thickness greater than or equal to 10 microns. Preferably, the functional layer 6 will even have a thickness greater than or equal to 50 microns.
• the functional layer 6 is removed after the application, to the composite structure 9, of the heat treatment intended to consolidate the first bonding interface of the hetero-structure 5 and / or heal all or part of the defects in the useful layer 2.
• the adhesion energy of the second bonding interface between the functional layer 6 and the second face 4 of the useful layer 2 of 1 ' hetero-structure 5 will be chosen less than 1000 mJ / m 2 , to allow the disassembly of the functional layer 6.
• the term disassembly is here used to translate the separation between the functional layer 6 and the hetero structure 5 at the level of second gluing interface.
• the present invention thus makes it possible to obtain a hetero-structure whose mechanical strength (consolidated bonding interface) and the electrical characteristics (defects of the useful layer totally or partially cured) are compatible with the subsequent development of the devices to be used.
• the adhesion energy between the useful layer 2 and the support substrate 1 of the hetero-structure 5 is greater than or equal to 1500 mJ / m 2 .
• one or more first local opening (s) 10 is (are) arranged (s). ) in the functional layer 6 of the composite structure 9, allowing access to at least a first portion 11 of the second face 4 of the useful layer 2.
• the first portion 11 of the second face 4 of the useful layer comprises in particular metal elements 12 forming an acoustic wave device, in particular a SAW device ( Figure 2b).
• the metal elements 12 may for example consist of interdigitated electrodes and associated contact pads.
• the composite structure 9 according to this second variant may provide a more advantageous mechanical strength than the hetero-structure 5 alone: it may in particular be compatible with higher heat treatments compared to a hetero-structure 9 devoid of functional layer 6, during the manufacture of the acoustic wave device.
• the functional layer 6 comprises metal contacts 13 and / or electronic devices 14 electrically connected to certain metal elements 12 arranged on the useful layer 2.
• the composite structure 9 allows in this mode of implementation deporting the contact pads of the SAW devices present on the useful layer 2, on the face 8 of the functional layer 6; this configuration may be particularly useful for facilitating vertical interconnections and an assembly with a cover 15 ("wafer level packaging", illustrated in FIG. 2c).
• the composite structure 9 furthermore makes it possible to co-integrate components, some 12 produced on a piezoelectric material (the useful layer 2), others 14 produced on the functional layer 6 (for example a semi-conducting layer of silicon).
• the support substrate 1 also comprises one (or more) second local opening 16 allowing access to the at least a second portion 17 of the first face 3 of the useful layer 2.
• the second local opening 16 will be at least partially vis-à-vis with a first local opening 10 arranged in the functional layer 6; the first local opening 10 allows access to at least a first portion 11 of the second face 4 of the useful layer 2.
• the first 11 and second 17 parts respectively of the second 4 and first 3 faces of the useful layer 2 comprise elements metallic forming an acoustic wave device, for example a BAW device.
• the functional layer 6 and / or the support substrate 1 comprises (nt) metal contacts 13, 20 and / or electronic devices 14 electrically connected to certain metal elements 12, 18 disposed on the first 11 and second 17 parts of the useful layer. 2. As illustrated in FIG. 3, metal elements 18 arranged on the second part 17 of the useful layer 2 may be connected to contact pads 20 of the functional layer 6 by means of through conductive vias 19.
• the invention also relates to a method for manufacturing a composite structure 9 for an acoustic wave device.
• the method includes a step of providing a hetero structure comprising a useful layer 2 of piezoelectric material, having a first face 3 and a second face 4 ( Figure 4a).
• the first face 3 is disposed on a support substrate 1 having a coefficient of thermal expansion less than that of the useful layer 2.
• the method further comprises a step of assembling the entire surface of a face 7 of a functional layer 6 (FIG. 4a) on the second face 4 of the useful layer 2 to form the composite structure 9 (FIG. 4b), the functional layer 6 having a coefficient of thermal expansion less than that of the useful layer 2.
• This assembly step may consist of a direct bonding by molecular adhesion.
• the surfaces to be assembled respectively of the functional layer 6 and the useful layer 2 may advantageously undergo a sequence of cleanings to prepare them for direct bonding. For example, a chemical cleaning based on ozone and RCA may be applied and a plasma treatment 02 or N2 surface activation.
• a chemical cleaning based on ozone and RCA may be applied and a plasma treatment 02 or N2 surface activation.
• an intermediate layer may be deposited on the face 7 of the functional layer 6 and / or on the face 4 of the useful layer 2, for example a layer of silicon oxide or silicon nitride.
• the method according to the invention also comprises a step of heat treatment of the composite structure 9 at a temperature above a limit temperature beyond which hetero structure 5 degrades or breaks in the absence of the functional layer 6.
• CTE coefficient of thermal expansion
• the hetero structure 5 will degrade (cracking or breaking of the support substrate 1, separation of the useful layer 2 at its first face 3, dislocation or deformation of the useful layer 2) when applied to a temperature above a limit temperature; this limit temperature is related to the difference in CTE between the useful layer 2 and the support substrate 1 and to the respective natures and thicknesses of the useful layer 2 and the support substrate 1.
• the composite structure 9 will thus be compatible with a temperature greater than or equal to 250 ° C, in particular between 250 ° and 600 ° C, depending on the materials and the respective thicknesses of the functional layers 6, useful 2 and the support substrate 1.
• the method according to the invention comprises a step of setting the functional layer 6 (FIG. 4c) to a thickness, prior to the heat treatment step, to arrive at a thickness of the functional layer 6 greater than or equal to at a threshold thickness.
• this threshold thickness will be chosen greater than or equal to 10 microns.
• the functional layer 6 will even have a thickness greater than or equal to 50 microns.
• the step of setting to thickness may consist of a mechanical, mechano-chemical and / or chemical thinning.
• the method according to the invention may comprise a step of removing the functional layer 6 after the heat treatment step, by dismounting at a bonding interface of the composite structure 9 between the functional layer 6 and the useful layer 2 (called the second bonding interface).
• the assembly step of the process between the functional layer 6 and the useful layer 2 will have been carried out so that the second bonding interface can be subsequently dismantled; in particular, it has been performed so that the bonding energy at this interface is less than 1000mJ / m 2 .
• the assembly step may consist of oxide / oxide bonding, the face 7 of the functional layer 6 and the face 4 of the useful layer 2 being provided with a silicon oxide layer.
• the surface roughness of the oxide layers will be chosen in the range of 0.1 to 0.5 nm RMS, so as to obtain a bonding energy of less than 1000 mJ / m 2 , for example of the order of 500 mJ / m 2 .
• Disassembly after the heat treatment step, may for example be performed by applying a mechanical stress at the second bonding interface of the composite structure 9, that is to say at the interface between the functional layer 9 and the useful layer 2.
• the heterostructure 5 is obtained with a consolidated bonding interface, compatible with the subsequent steps of manufacturing an acoustic wave device.
• the total removal of the functional layer 6 can be achieved through mechanical, mechano-chemical or chemical thinning techniques.
• the method according to the invention comprises a step of local removal of the functional layer 6 to allow access to at least a first portion 11 of the second face 4 of the useful layer 2.
• This Local removal step may consist of wet or dry chemical etching at areas defined for example by photolithography techniques. For example, it will be possible to achieve a local withdrawal on a plurality of zones allowing access to a percentage (opening rate) of the second face 4 of the useful layer 2; the opening rate may be between a few% and ⁇ 100%, depending on the devices to be developed.
• the method then comprises a step of producing acoustic wave devices comprising metal elements 12 on the plurality of first parts 11 (Figure 2b).
• This embodiment of devices may include the development of contact pads 13 on the functional layer 6, electrically connected with the acoustic wave devices present on the useful layer 2.
• the method according to the invention may further comprise a step of locally removing the support substrate 1 to allow access to at least a second portion 17 of the first face 3 of the useful layer 2.
• This local removal step may consist of wet or dry chemical etching at defined areas for example by photolithography techniques. By way of example, it will be possible to achieve a local withdrawal on a plurality of zones with an opening rate of between 1 and 50%.
• the plurality of second portions 17 and the plurality of first portions 11 will be at least partially vis-à-vis, thereby obtaining a local membrane self- useful layer range 2.
• the method then comprises a step of producing acoustic wave devices comprising elements 18 on the plurality of second portions 17 of the useful layer 2, as illustrated in FIG.
• the method may comprise a step of producing components 14 on the functional layer 6 and / or on the support substrate 1, and / or an electrical connection step between metal elements 12, 18 arranged on the useful layer 2 and contacts 13,20 metal arranged on the functional layer 6 and / or on the support substrate 1.
• Example 1 Example 1:
• a hetero-structure comprising a useful layer 2 made of lithium niobate (LiNbO 3) with a thickness of 20 microns and a support substrate 1 made of silicon (Si) with a thickness of 625 microns and 150 mm in diameter has a bonding much lower than lJ / m 2 .
• LiNbO 3 lithium niobate
• Si silicon
• the functional layer 6 is a silicon substrate
• the functional layer 6 is then cleaned (typically ozone and RCA) prior to its assembly on the second face 4 of the useful layer 2 of the hetero-structure 5.
• the heat treatment is then applied at 250 ° C. for 2 hours to the composite structure 9. This is able to withstand a thermal budget of 250 ° C / 2h, without being damaged and without generating degradation of the hetero-structure 5.
• the heterostructure 5 alone, would have undergone a degradation (cracking or breaking of the support substrate 1 and / or partial or total detachment of the useful layer 2), if it had been subjected before reinforcement of its bonding interface to this thermal budget, or even to a lower thermal budget of the order of 200 ° C.
• the heat treatment carried out, the functional layer 6 is removed by insertion of a bevel-shaped tool at the bonding interface between the functional layer 6 and the useful layer 2.
• the hetero-structure 5 has an interface of reinforced bonding, of the order of 1.5J / m 2 which ensures a good mechanical strength in the subsequent steps of development of acoustic wave devices.
• Example 2
• a hetero-structure 9 is formed from a useful layer 2 made of lithium tantalate (LiTaO 3) with a thickness of 0.3 microns and a support substrate 1 made of silicon (Si) with a thickness of 625 microns and 150mm in diameter.
• the useful layer 2 was postponed by the Smart Cut® process and exhibits, after detachment, defects in its thickness which are prohibitive for the production of acoustic wave devices, since they impact the piezoelectric properties of the useful layer 2. Before the realization of the wave devices acoustic on this hetero-structure 5, it is therefore essential to cure all or part of these defects; for this, it is necessary to apply heat treatment at a temperature of 550 ° C for 2 hours.
• the functional layer 6 is a silicon substrate (diameter 150 mm and thickness 625 microns) having an intermediate layer of silicon oxide 400 nm thick on its front face 7; it undergoes a cleaning (typically ozone and RCA) and a plasma treatment 02, prior to its assembly on the second face 4 of the useful layer 2 of the hetero-structure 5.
• a step of setting the thickness of the functional layer 6 is then operated by mechanical thinning (grinding), then by mechanical-chemical polishing, to a final thickness of 200 microns.
• the composite structure 9 thus formed is able to withstand a thermal budget of 550 ° C / 2h, without being damaged and without generating degradation of the heterostructure 5.
• the hetero structure 5, alone, would have been damaged ( cracking or breaking of the support substrate 1 and / or partial or total separation of the useful layer 2), if it had been subjected to this thermal budget without the functional layer 6.
• the functional layer 6 is dismounted by providing a localized stress at the second bonding interface between the functional layer 6 and the useful layer 2.
• the functional layer 6 is removed by a sequence of mechanical and chemical thinning.
• the hetero-structure 5 has a reinforced bonding interface, greater than or equal to 1.5J / m 2 because of the thermal budget applied and the useful layer 2 has been cured of the majority of defects related to the implantation of species. light hydrogen or helium (Smart Cut® process), becoming compatible with the realization of acoustic wave devices.
• the level of cure of the defects in the useful layer 2 can be evaluated by the production of electrical devices and the testing of their level of performance, making it possible to validate the electrical quality of said useful layer 2.
• a hetero-structure 9 is formed from a useful layer 2 made of lithium tantalate (LiTaO 3) with a thickness of 0.3 microns and a support substrate 1 made of silicon (Si) with a thickness of 625 microns and 150mm in diameter.
• the useful layer 2 was postponed by the Smart Cut® process and exhibits, after detachment, defects in its thickness which are prohibitive for the production of acoustic wave devices, since they impact the piezoelectric properties of the useful layer 2. Before the realization of the wave devices acoustic on this hetero-structure 5, it is therefore essential to cure these defects; for this, it is necessary to apply heat treatment at a temperature of 500 ° C for 2 hours.
• the functional layer 6 is a silicon substrate (diameter 150 mm and thickness 625 microns) comprising 400nm thick silicon oxide intermediate layer on its front face 7; it undergoes a cleaning (typically ozone and RCA) and a plasma treatment 02, prior to its assembly on the second side 4 of the useful layer 2 of the hetero-structure 9.
• a step of setting the thickness of the functional layer 6 is then operated by mechanical thinning (grinding), then by mechanical-chemical polishing, to a final thickness of 10 microns.
• the composite structure 9 thus formed is capable of withstanding a thermal budget of 500 ° C / 2h, without being damaged and without generating degradation of the heterostructure 5.
• the hetero structure 5, alone, would have been damaged ( cracking or breaking of the support substrate 1 and / or partial or total detachment of the useful layer 2), if it had been subjected to this thermal budget without the functional layer 6.
• the hetero-structure 5 Since the heat treatment has been applied to the composite structure 9, the hetero-structure 5 has a reinforced bonding interface, greater than 1.5J / m 2 because of the thermal budget applied and the useful layer 2 has been cured of a most of the defects related to the implantation of light species hydrogen or helium (Smart Cut® process), becoming compatible with the realization of acoustic wave devices.
• a local removal step of the functional layer 6 is then carried out to allow access to at least a first portion 11 of the second face 4 of the useful layer 2.
• This local withdrawal step may consist of wet or dry chemical etching at the level of areas defined by photolithography.
• the local withdrawal can be performed on a plurality of zones allowing access to a plurality of first portions 11, and representing an opening rate of the order of 50%.
• Acoustic wave devices can then be developed on the plurality of first portions 11 of the useful layer 2. These devices comprise metal elements 12, typically interdigitated electrodes.
• the presence, even partial, of the functional layer 6 on the useful layer 2 authorizes the carrying out of treatments at more than high temperatures only in the case where the hetero-structure 5 would be alone; this is favorable to the use of materials or more efficient technologies for the realization of acoustic wave devices.
• Contact pads 13 on the functional layer 6 may be electrically connected with the acoustic wave devices present on the useful layer 2. Components may also be developed on the functional layer 6.
• the composite structure 9 thus facilitates the co-integration of developed components on piezoelectric material (the active layer) and semi ⁇ conductive material (functional layer).
• the composite structure according to the invention is of great interest for the manufacture of acoustic wave devices, for example in the field of SAW and BAW filters for radio frequency applications, but also in the field of piezoelectric sensors. Indeed, the latter allowing the transformation of mechanical movements into electrical signals, and this with great sensitivity, several fields of application open or are likely to open in the areas of temperature sensors, energy (“Energy harvesting”), etc.

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• Physics & Mathematics (AREA)
• Acoustics & Sound (AREA)
• Engineering & Computer Science (AREA)
• Manufacturing & Machinery (AREA)
• Chemical & Material Sciences (AREA)
• Ceramic Engineering (AREA)
• Materials Engineering (AREA)
• Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
• Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)

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• 2015
  • 2015-10-20 FR FR1559994A patent/FR3042647B1/fr active Active
• 2016
  • 2016-10-17 CN CN202210146142.3A patent/CN114512595A/zh active Pending
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