JP7426932B2 - 寄生容量が低減されたバルク弾性波共振器の製造方法 - Google Patents
寄生容量が低減されたバルク弾性波共振器の製造方法 Download PDFInfo
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- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
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- H—ELECTRICITY
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- H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
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- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
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- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/021—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the air-gap type
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- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/025—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks comprising an acoustic mirror
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- H03H2009/02188—Electrically tuning
- H03H2009/02204—Electrically tuning operating on an additional circuit element, e.g. applying a tuning DC voltage to a passive circuit element connected to the resonator
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Description
前記方法が、
(a)第1の機能スタックを提供する段階と、
(b)第1の要素と位置合わせされるように、第1の機能スタック上に第2要素を形成する段階と、
(c)第2の要素を含まない第2のスタックを提供する段階と、
(d)第1の機能スタック及び第2の機能スタックを組み立てる段階と、
を含む、製造方法である。
電極4、6、10、12は、Alであり、それぞれが100nmの厚さである。
4 電極
6 電極
8 圧電材料の層
10 電極
12 電極
E1 トランスデューサスタック
E2 調整スタック
Claims (15)
- 少なくとも第1の機能スタック及び第2の機能スタックを含む音響共振器の製造方法であって、
前記第1の機能スタックが、2つの構造化された導電層の間に挿入された圧電又は誘電材料の第1の層からなる少なくとも1つの第1の要素を含み、前記導電層の被覆表面が第1のアクティブ領域を規定し、
前記第2の機能スタックが、第1及び第2の電極の間に挿入された圧電材料の第2の層からなる少なくとも1つの第2の要素を含み、前記第1及び第2の電極の被覆表面が第2のアクティブ領域を規定し、
前記製造方法が、
前記第1のアクティブ領域を規定する、前記2つの構造化された導電層に加えて、前記圧電又は誘電材料の第1の層を含む第1の機能スタックを提供する段階と、
前記第1のアクティブ領域に前記第1の電極が位置合わせされるように前記第1の機能スタックに前記第2の機能スタックの第1の電極を形成し、前記第1の電極に電気絶縁材料の第1の結合層を形成する段階と、
少なくとも1つの電気絶縁材料の第2の結合層と前記圧電材料の第2の層とを含む前記第2の機能スタックの一部を提供する段階と、
前記第1及び第2の結合層を接触させることによって、前記第1の機能スタックと、少なくとも1つの第2の結合層及び前記圧電材料の第2の層を含む前記第2の機能スタックの一部と、を組み立てる段階と、
前記第1のアクティブ領域に位置合わせされる前記第2のアクティブ領域を規定するように、前記第2の機能スタックの第2の電極を形成する段階と、
を含む、音響共振器の製造方法。 - 前記第1の機能スタックと前記第2の機能スタックの一部との間の組み立てが、直接結合である、請求項1に記載の製造方法。
- 前記第1及び第2の結合層が誘電材料である、請求項1又は2に記載の製造方法。
- 前記第1及び第2の結合層が、10nmから50nmの厚さを有する中間層を形成するようなものである、請求項1から3の何れか一項に記載の製造方法。
- 前記第1のアクティブ領域との前記第1の電極の位置合わせ、及び、前記第2のアクティブ領域が前記第1のアクティブ領域と位置合わせされるような前記第2の電極の製造が、フォトリソグラフィ中にマスクアライナー又はフォトリピーターを実施することによって実現される、請求項1から4の何れか一項に記載の製造方法。
- 前記第1の機能スタックがトランスデューサであり、前記圧電材料の第2の層を含む前記第2の機能スタックが、前記トランスデューサのための周波数調整手段を形成する、請求項1から5の何れか一項に記載の製造方法。
- 前記第2の機能スタックを形成する前に、前記第2の機能スタックの前記圧電材料の第2の層の所定の厚さの一部を所定の厚さまで除去する段階を含む、請求項6に記載の製造方法。
- 前記少なくとも1つの第1の要素が圧電材料の第1の層からなる場合、前記圧電材料の第2の層の所定の厚さを有する部分を除去する段階が、前記第2の機能スタックの圧電材料の第2の層を破砕することによって達成され、前記圧電材料の第2の層が、前記第1の機能スタックの圧電材料の第1の層の所定の深さより大きい深さまで事前にイオン注入を受けている、請求項7に記載の製造方法。
- 前記少なくとも1つの第1の要素が圧電材料の第1の層からなる場合、前記第1の機能スタックが、前記第1及び第2の電極を支持する支持基板及び前記圧電材料の第1の層を含む、請求項6から8の何れか一項に記載の製造方法。
- 前記支持基板を構造化して、前記音響共振器の下にキャビティを形成する段階を含む、請求項9に記載の製造方法。
- 前記支持基板を構造化して、前記音響共振器の下にキャビティを形成する段階が、犠牲層をエッチングすることにより行われる、請求項10に記載の製造方法。
- 前記少なくとも1つの第1の要素が圧電材料の第1の層からなる場合、前記圧電材料の第1の層が、イオン注入及び破砕によって製造される、請求項6から11の何れか一項に記載の製造方法。
- 前記第1の機能スタックが、ブラッグミラーを形成し、前記第1の機能スタック及び前記第2の機能スタックが、ブラッグミラー上にバルク弾性波共振器を形成する、請求項1から5の何れか一項に記載の製造方法。
- 前記少なくとも1つの第1の要素が圧電材料の第1の層からなる場合、前記圧電材料の第1の層及び/又は第2の層が、Xカットのニオブ酸リチウムである、請求項13に記載の製造方法。
- 前記少なくとも1つの第1の要素が圧電材料の第1の層からなる場合、前記圧電材料の第1の層及び/又は第2の層が、Y+163°カットのニオブ酸リチウムである、請求項13に記載の製造方法。
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FR1763228A FR3076126A1 (fr) | 2017-12-26 | 2017-12-26 | Procede de realisation d'un resonateur acoustique a ondes de volume a capacite parasite reduite |
FR1763228 | 2017-12-26 | ||
PCT/FR2018/053517 WO2019129979A1 (fr) | 2017-12-26 | 2018-12-21 | Procede de realisation d'un resonateur acoustique a ondes de volume a capacite parasite reduite |
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US11611330B2 (en) * | 2019-01-15 | 2023-03-21 | University Of Florida Research Foundation, Incorporated | Micro-electro-mechanical resonators |
FR3093511B1 (fr) | 2019-03-05 | 2022-08-05 | Commissariat Energie Atomique | Procédé de réalisation d’un système micro-électro-mécanique réalisé à partir d’une couche piézoélectrique ou ferroélectrique reportée |
WO2021042342A1 (zh) * | 2019-09-05 | 2021-03-11 | 刘宇浩 | 一种体声波谐振装置及一种体声波滤波器 |
CN110995196B (zh) * | 2019-12-05 | 2023-11-10 | 瑞声科技(新加坡)有限公司 | 谐振器的制备方法和谐振器 |
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