KR102671257B1 - 복합 구조체 및 관련 제조 방법 - Google Patents

복합 구조체 및 관련 제조 방법 Download PDF

Info

Publication number
KR102671257B1
KR102671257B1 KR1020187014265A KR20187014265A KR102671257B1 KR 102671257 B1 KR102671257 B1 KR 102671257B1 KR 1020187014265 A KR1020187014265 A KR 1020187014265A KR 20187014265 A KR20187014265 A KR 20187014265A KR 102671257 B1 KR102671257 B1 KR 102671257B1
Authority
KR
South Korea
Prior art keywords
layer
composite structure
functional layer
useful layer
useful
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020187014265A
Other languages
English (en)
Korean (ko)
Other versions
KR20180074732A (ko
Inventor
파스칼 게나르
이오누트 라두
디디에 랑드뤼
에릭 데보네트
Original Assignee
소이텍
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 소이텍 filed Critical 소이텍
Publication of KR20180074732A publication Critical patent/KR20180074732A/ko
Application granted granted Critical
Publication of KR102671257B1 publication Critical patent/KR102671257B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/50—Piezoelectric or electrostrictive devices having a stacked or multilayer structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H10N30/853—Ceramic compositions
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
    • H03H9/02031—Characteristics of piezoelectric layers, e.g. cutting angles consisting of ceramic
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02086—Means for compensation or elimination of undesirable effects
    • H03H9/02102—Means for compensation or elimination of undesirable effects of temperature influence
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02086—Means for compensation or elimination of undesirable effects
    • H03H9/02133—Means for compensation or elimination of undesirable effects of stress
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02543—Characteristics of substrate, e.g. cutting angles
    • H03H9/02574—Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders or supports
    • H03H9/0504—Holders or supports for bulk acoustic wave devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/05—Manufacture of multilayered piezoelectric or electrostrictive devices, or parts thereof, e.g. by stacking piezoelectric bodies and electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/072—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/101—Piezoelectric or electrostrictive devices with electrical and mechanical input and output, e.g. having combined actuator and sensor parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/88—Mounts; Supports; Enclosures; Casings
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
    • H03H2003/0407—Temperature coefficient
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H10N30/853—Ceramic compositions
    • H10N30/8542—Alkali metal based oxides, e.g. lithium, sodium or potassium niobates

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
KR1020187014265A 2015-10-20 2016-10-17 복합 구조체 및 관련 제조 방법 Active KR102671257B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR1559994A FR3042647B1 (fr) 2015-10-20 2015-10-20 Structure composite et procede de fabrication associe
FR1559994 2015-10-20
PCT/FR2016/052675 WO2017068270A1 (fr) 2015-10-20 2016-10-17 Structure composite et procédé de fabrication associé

Publications (2)

Publication Number Publication Date
KR20180074732A KR20180074732A (ko) 2018-07-03
KR102671257B1 true KR102671257B1 (ko) 2024-06-03

Family

ID=54708030

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020187014265A Active KR102671257B1 (ko) 2015-10-20 2016-10-17 복합 구조체 및 관련 제조 방법

Country Status (8)

Country Link
US (1) US12603629B2 (https=)
EP (1) EP3365927B1 (https=)
JP (1) JP6923518B2 (https=)
KR (1) KR102671257B1 (https=)
CN (2) CN114512595A (https=)
FR (1) FR3042647B1 (https=)
SG (1) SG11201803341QA (https=)
WO (1) WO2017068270A1 (https=)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3068508B1 (fr) * 2017-06-30 2019-07-26 Soitec Procede de transfert d'une couche mince sur un substrat support presentant des coefficients de dilatation thermique differents
FR3076126A1 (fr) * 2017-12-26 2019-06-28 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de realisation d'un resonateur acoustique a ondes de volume a capacite parasite reduite
FR3079346B1 (fr) * 2018-03-26 2020-05-29 Soitec Procede de fabrication d'un substrat donneur pour le transfert d'une couche piezoelectrique, et procede de transfert d'une telle couche piezoelectrique
EP3948357A4 (en) 2019-03-29 2022-11-02 Shenzhen Xpectvision Technology Co., Ltd. SEMICONDUCTOR X-RAY DETECTOR
US11606078B2 (en) 2019-07-18 2023-03-14 Skyworks Solutions, Inc. Acoustic wave resonator with rotated and tilted interdigital transducer electrode
US11750172B2 (en) 2019-08-21 2023-09-05 Skyworks Solutions, Inc. Multilayer piezoelectric substrate
US11722122B2 (en) 2019-11-22 2023-08-08 Skyworks Solutions, Inc. Multilayer piezoelectric substrate with high density electrode
CN111883644B (zh) * 2020-07-23 2021-04-13 中国科学院上海微系统与信息技术研究所 一种异质压电薄膜结构及其制备方法
GB2598665B (en) * 2020-09-04 2025-07-23 Skyworks Solutions Inc Multi-layer piezoelectric substrate with controllable delta temperature coefficient of frequency
EP3989299B1 (en) * 2020-10-26 2025-08-06 Université de Franche-Comté Piezoelectric device comprising flexible single crystalline piezoelectric linbo3 and/or litao3 films integrated on flexible substrate and methods for producing the same
US12562711B2 (en) 2021-07-15 2026-02-24 Skyworks Solutions, Inc. Wafer level package having enhanced thermal dissipation
US12525951B2 (en) 2021-10-01 2026-01-13 Skyworks Solutions, Inc. Surface acoustic wave device having a trapezoidal electrode
US20230208385A1 (en) 2021-12-28 2023-06-29 Skyworks Solutions, Inc. Acoustic wave device with tilted interdigital transducer electrode
US12483226B2 (en) 2021-12-29 2025-11-25 Skyworks Solutions, Inc. Acoustic wave device with tilted multilayer interdigital transducer electrode
US12470199B2 (en) 2022-01-13 2025-11-11 Skyworks Solutions, Inc. Acoustic wave device with vertically mass loaded multi-layer interdigital transducer electrode for transverse mode suppression
US20230344411A1 (en) 2022-04-15 2023-10-26 Skyworks Solutions, Inc. Multiplexer with dies of different acoustic velocity

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004159262A (ja) * 2002-11-08 2004-06-03 Murata Mfg Co Ltd 弾性境界波装置
WO2008078481A1 (ja) * 2006-12-25 2008-07-03 Murata Manufacturing Co., Ltd. 弾性境界波装置
JP2009124696A (ja) * 2007-10-26 2009-06-04 Panasonic Electric Works Co Ltd 共振装置
WO2014129432A1 (ja) * 2013-02-19 2014-08-28 日本碍子株式会社 複合基板、弾性波デバイス及び弾性波デバイスの製法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW219354B (en) * 1993-05-31 1994-01-21 Ind Tech Res Inst Strengthening of multi-layer ceramic/glass articles
JPH10297931A (ja) 1997-04-24 1998-11-10 Matsushita Electric Ind Co Ltd 複合圧電基板の製造方法
TW449937B (en) * 1999-02-26 2001-08-11 Matsushita Electronics Corp Semiconductor device and the manufacturing method thereof
FR2816445B1 (fr) * 2000-11-06 2003-07-25 Commissariat Energie Atomique Procede de fabrication d'une structure empilee comprenant une couche mince adherant a un substrat cible
FR2856192B1 (fr) * 2003-06-11 2005-07-29 Soitec Silicon On Insulator Procede de realisation de structure heterogene et structure obtenue par un tel procede
US7164222B2 (en) * 2003-06-26 2007-01-16 Intel Corporation Film bulk acoustic resonator (FBAR) with high thermal conductivity
KR100850861B1 (ko) * 2004-01-19 2008-08-06 가부시키가이샤 무라타 세이사쿠쇼 탄성 경계파 장치
CN101416570B (zh) * 2006-06-02 2012-05-09 株式会社村田制作所 多层陶瓷基板及其制造方法以及电子器件
US7608986B2 (en) * 2006-10-02 2009-10-27 Seiko Epson Corporation Quartz crystal resonator
US7408286B1 (en) * 2007-01-17 2008-08-05 Rf Micro Devices, Inc. Piezoelectric substrate for a saw device
JP5104761B2 (ja) 2007-04-09 2012-12-19 株式会社村田製作所 セラミック基板およびその製造方法
JP5029699B2 (ja) 2007-11-30 2012-09-19 株式会社村田製作所 セラミック複合多層基板及びその製造方法並びに電子部品
JP4460612B2 (ja) 2008-02-08 2010-05-12 富士通メディアデバイス株式会社 弾性表面波デバイス及びその製造方法
WO2009139272A1 (ja) * 2008-05-15 2009-11-19 株式会社村田製作所 多層セラミック基板およびその製造方法
FR2942911B1 (fr) 2009-03-09 2011-05-13 Soitec Silicon On Insulator Procede de realisation d'une heterostructure avec adaptation locale de coefficient de dilatation thermique
JP6242597B2 (ja) 2013-06-03 2017-12-06 太陽誘電株式会社 弾性波デバイス及びその製造方法
CN104979440B (zh) * 2014-04-10 2019-01-18 传感器电子技术股份有限公司 复合衬底
EP3196952B1 (en) * 2016-01-21 2019-06-19 AT & S Austria Technologie & Systemtechnik Aktiengesellschaft Mems piezoelectric transducer formed at a pcb support structure

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004159262A (ja) * 2002-11-08 2004-06-03 Murata Mfg Co Ltd 弾性境界波装置
WO2008078481A1 (ja) * 2006-12-25 2008-07-03 Murata Manufacturing Co., Ltd. 弾性境界波装置
JP2009124696A (ja) * 2007-10-26 2009-06-04 Panasonic Electric Works Co Ltd 共振装置
WO2014129432A1 (ja) * 2013-02-19 2014-08-28 日本碍子株式会社 複合基板、弾性波デバイス及び弾性波デバイスの製法

Also Published As

Publication number Publication date
US20180316329A1 (en) 2018-11-01
JP2018537888A (ja) 2018-12-20
EP3365927A1 (fr) 2018-08-29
EP3365927B1 (fr) 2021-03-24
CN108271425A (zh) 2018-07-10
US12603629B2 (en) 2026-04-14
KR20180074732A (ko) 2018-07-03
JP6923518B2 (ja) 2021-08-18
FR3042647B1 (fr) 2017-12-01
SG11201803341QA (en) 2018-05-30
WO2017068270A1 (fr) 2017-04-27
CN114512595A (zh) 2022-05-17
FR3042647A1 (fr) 2017-04-21

Similar Documents

Publication Publication Date Title
KR102671257B1 (ko) 복합 구조체 및 관련 제조 방법
JP4743258B2 (ja) 圧電デバイスの製造方法
KR101251031B1 (ko) 복합 압전기판의 제조방법 및 압전 디바이스
US11711065B2 (en) Substrate for a temperature-compensated surface acoustic wave device or volume acoustic wave device
CN110880920B (zh) 异质薄膜结构的制备方法
CN110137341A (zh) 单晶压电薄膜异质衬底的制备方法
KR20120025633A (ko) 복합 압전 기판의 제조방법
JP2018537888A5 (https=)
JP5182379B2 (ja) 複合基板の製造方法
JP5277999B2 (ja) 複合基板の製造方法
KR101302071B1 (ko) 제공 기판의 인장 응력 조건을 감소시키기 위한 이종 구조체의 제조 방법
US11979132B2 (en) Method for manufacturing a substrate for a radiofrequency filter
KR102870817B1 (ko) 압전 층을 전사하는데 사용될 수 있는, 무선주파수 장치용 압전 구조체를 제조하기 위한 공정 및 이러한 압전 층을 전사하기 위한 공정
TWI867180B (zh) 用於製作射頻裝置用壓電結構之方法，該壓電結構可用於壓電層的移轉，以及移轉該壓電層之方法
KR20250099334A (ko) 절연체 상 압전(poi) 기판, 및 절연체 상 압전(poi) 기판의 제조 방법
TW202445751A (zh) 用於製造包含多孔矽層的多層結構的方法

Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20180518

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
A201 Request for examination
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20210818

Comment text: Request for Examination of Application

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20230908

Patent event code: PE09021S01D

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

Patent event code: PE07011S01D

Comment text: Decision to Grant Registration

Patent event date: 20240416

GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 20240528

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 20240529

End annual number: 3

Start annual number: 1

PG1601 Publication of registration