CN114512595A - 复合结构及相关制造方法 - Google Patents

复合结构及相关制造方法 Download PDF

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Publication number
CN114512595A
CN114512595A CN202210146142.3A CN202210146142A CN114512595A CN 114512595 A CN114512595 A CN 114512595A CN 202210146142 A CN202210146142 A CN 202210146142A CN 114512595 A CN114512595 A CN 114512595A
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CN
China
Prior art keywords
layer
composite structure
acoustic wave
functional layer
wave device
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Pending
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CN202210146142.3A
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English (en)
Chinese (zh)
Inventor
帕斯卡·昆纳德
I·拉杜
迪迪埃·朗德吕
E·德斯邦内特斯
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Soitec SA
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Soitec SA
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Publication of CN114512595A publication Critical patent/CN114512595A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H10N30/853—Ceramic compositions
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/50—Piezoelectric or electrostrictive devices having a stacked or multilayer structure
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
    • H03H9/02031—Characteristics of piezoelectric layers, e.g. cutting angles consisting of ceramic
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02086—Means for compensation or elimination of undesirable effects
    • H03H9/02102—Means for compensation or elimination of undesirable effects of temperature influence
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02086—Means for compensation or elimination of undesirable effects
    • H03H9/02133—Means for compensation or elimination of undesirable effects of stress
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02543—Characteristics of substrate, e.g. cutting angles
    • H03H9/02574—Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders or supports
    • H03H9/0504—Holders or supports for bulk acoustic wave devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/05—Manufacture of multilayered piezoelectric or electrostrictive devices, or parts thereof, e.g. by stacking piezoelectric bodies and electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/072—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/101—Piezoelectric or electrostrictive devices with electrical and mechanical input and output, e.g. having combined actuator and sensor parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H10N30/853—Ceramic compositions
    • H10N30/8542—Alkali metal based oxides, e.g. lithium, sodium or potassium niobates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/88—Mounts; Supports; Enclosures; Casings
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
    • H03H2003/0407—Temperature coefficient

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  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
CN202210146142.3A 2015-10-20 2016-10-17 复合结构及相关制造方法 Pending CN114512595A (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
FR1559994A FR3042647B1 (fr) 2015-10-20 2015-10-20 Structure composite et procede de fabrication associe
FR1559994 2015-10-20
PCT/FR2016/052675 WO2017068270A1 (fr) 2015-10-20 2016-10-17 Structure composite et procédé de fabrication associé
CN201680065643.1A CN108271425A (zh) 2015-10-20 2016-10-17 复合结构及相关制造方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN201680065643.1A Division CN108271425A (zh) 2015-10-20 2016-10-17 复合结构及相关制造方法

Publications (1)

Publication Number Publication Date
CN114512595A true CN114512595A (zh) 2022-05-17

Family

ID=54708030

Family Applications (2)

Application Number Title Priority Date Filing Date
CN202210146142.3A Pending CN114512595A (zh) 2015-10-20 2016-10-17 复合结构及相关制造方法
CN201680065643.1A Pending CN108271425A (zh) 2015-10-20 2016-10-17 复合结构及相关制造方法

Family Applications After (1)

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CN201680065643.1A Pending CN108271425A (zh) 2015-10-20 2016-10-17 复合结构及相关制造方法

Country Status (8)

Country Link
US (1) US12603629B2 (https=)
EP (1) EP3365927B1 (https=)
JP (1) JP6923518B2 (https=)
KR (1) KR102671257B1 (https=)
CN (2) CN114512595A (https=)
FR (1) FR3042647B1 (https=)
SG (1) SG11201803341QA (https=)
WO (1) WO2017068270A1 (https=)

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FR3068508B1 (fr) * 2017-06-30 2019-07-26 Soitec Procede de transfert d'une couche mince sur un substrat support presentant des coefficients de dilatation thermique differents
FR3076126A1 (fr) * 2017-12-26 2019-06-28 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de realisation d'un resonateur acoustique a ondes de volume a capacite parasite reduite
FR3079346B1 (fr) * 2018-03-26 2020-05-29 Soitec Procede de fabrication d'un substrat donneur pour le transfert d'une couche piezoelectrique, et procede de transfert d'une telle couche piezoelectrique
EP3948357A4 (en) 2019-03-29 2022-11-02 Shenzhen Xpectvision Technology Co., Ltd. SEMICONDUCTOR X-RAY DETECTOR
US11606078B2 (en) 2019-07-18 2023-03-14 Skyworks Solutions, Inc. Acoustic wave resonator with rotated and tilted interdigital transducer electrode
US11750172B2 (en) 2019-08-21 2023-09-05 Skyworks Solutions, Inc. Multilayer piezoelectric substrate
US11722122B2 (en) 2019-11-22 2023-08-08 Skyworks Solutions, Inc. Multilayer piezoelectric substrate with high density electrode
CN111883644B (zh) * 2020-07-23 2021-04-13 中国科学院上海微系统与信息技术研究所 一种异质压电薄膜结构及其制备方法
GB2598665B (en) * 2020-09-04 2025-07-23 Skyworks Solutions Inc Multi-layer piezoelectric substrate with controllable delta temperature coefficient of frequency
EP3989299B1 (en) * 2020-10-26 2025-08-06 Université de Franche-Comté Piezoelectric device comprising flexible single crystalline piezoelectric linbo3 and/or litao3 films integrated on flexible substrate and methods for producing the same
US12562711B2 (en) 2021-07-15 2026-02-24 Skyworks Solutions, Inc. Wafer level package having enhanced thermal dissipation
US12525951B2 (en) 2021-10-01 2026-01-13 Skyworks Solutions, Inc. Surface acoustic wave device having a trapezoidal electrode
US20230208385A1 (en) 2021-12-28 2023-06-29 Skyworks Solutions, Inc. Acoustic wave device with tilted interdigital transducer electrode
US12483226B2 (en) 2021-12-29 2025-11-25 Skyworks Solutions, Inc. Acoustic wave device with tilted multilayer interdigital transducer electrode
US12470199B2 (en) 2022-01-13 2025-11-11 Skyworks Solutions, Inc. Acoustic wave device with vertically mass loaded multi-layer interdigital transducer electrode for transverse mode suppression
US20230344411A1 (en) 2022-04-15 2023-10-26 Skyworks Solutions, Inc. Multiplexer with dies of different acoustic velocity

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CN1788415A (zh) * 2004-01-19 2006-06-14 株式会社村田制作所 边界声波装置
CN101505143A (zh) * 2008-02-08 2009-08-12 富士通媒体部品株式会社 表面声波器件及其制造方法
CN102027813A (zh) * 2008-05-15 2011-04-20 株式会社村田制作所 多层陶瓷基板及其制造方法
WO2014129432A1 (ja) * 2013-02-19 2014-08-28 日本碍子株式会社 複合基板、弾性波デバイス及び弾性波デバイスの製法

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CN1788415A (zh) * 2004-01-19 2006-06-14 株式会社村田制作所 边界声波装置
CN101505143A (zh) * 2008-02-08 2009-08-12 富士通媒体部品株式会社 表面声波器件及其制造方法
CN102027813A (zh) * 2008-05-15 2011-04-20 株式会社村田制作所 多层陶瓷基板及其制造方法
WO2014129432A1 (ja) * 2013-02-19 2014-08-28 日本碍子株式会社 複合基板、弾性波デバイス及び弾性波デバイスの製法

Also Published As

Publication number Publication date
US20180316329A1 (en) 2018-11-01
JP2018537888A (ja) 2018-12-20
EP3365927A1 (fr) 2018-08-29
KR102671257B1 (ko) 2024-06-03
EP3365927B1 (fr) 2021-03-24
CN108271425A (zh) 2018-07-10
US12603629B2 (en) 2026-04-14
KR20180074732A (ko) 2018-07-03
JP6923518B2 (ja) 2021-08-18
FR3042647B1 (fr) 2017-12-01
SG11201803341QA (en) 2018-05-30
WO2017068270A1 (fr) 2017-04-27
FR3042647A1 (fr) 2017-04-21

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