SG11201803341QA - Composite structure and associated production method - Google Patents
Composite structure and associated production methodInfo
- Publication number
- SG11201803341QA SG11201803341QA SG11201803341QA SG11201803341QA SG11201803341QA SG 11201803341Q A SG11201803341Q A SG 11201803341QA SG 11201803341Q A SG11201803341Q A SG 11201803341QA SG 11201803341Q A SG11201803341Q A SG 11201803341QA SG 11201803341Q A SG11201803341Q A SG 11201803341QA
- Authority
- SG
- Singapore
- Prior art keywords
- production method
- composite structure
- associated production
- composite
- production
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/853—Ceramic compositions
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/50—Piezoelectric or electrostrictive devices having a stacked or multilayer structure
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
- H03H9/02031—Characteristics of piezoelectric layers, e.g. cutting angles consisting of ceramic
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
- H03H9/02102—Means for compensation or elimination of undesirable effects of temperature influence
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
- H03H9/02133—Means for compensation or elimination of undesirable effects of stress
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
- H03H9/02574—Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders or supports
- H03H9/0504—Holders or supports for bulk acoustic wave devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/05—Manufacture of multilayered piezoelectric or electrostrictive devices, or parts thereof, e.g. by stacking piezoelectric bodies and electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/072—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/101—Piezoelectric or electrostrictive devices with electrical and mechanical input and output, e.g. having combined actuator and sensor parts
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/853—Ceramic compositions
- H10N30/8542—Alkali metal based oxides, e.g. lithium, sodium or potassium niobates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/88—Mounts; Supports; Enclosures; Casings
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
- H03H2003/0407—Temperature coefficient
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR1559994A FR3042647B1 (fr) | 2015-10-20 | 2015-10-20 | Structure composite et procede de fabrication associe |
| PCT/FR2016/052675 WO2017068270A1 (fr) | 2015-10-20 | 2016-10-17 | Structure composite et procédé de fabrication associé |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11201803341QA true SG11201803341QA (en) | 2018-05-30 |
Family
ID=54708030
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11201803341QA SG11201803341QA (en) | 2015-10-20 | 2016-10-17 | Composite structure and associated production method |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US12603629B2 (https=) |
| EP (1) | EP3365927B1 (https=) |
| JP (1) | JP6923518B2 (https=) |
| KR (1) | KR102671257B1 (https=) |
| CN (2) | CN114512595A (https=) |
| FR (1) | FR3042647B1 (https=) |
| SG (1) | SG11201803341QA (https=) |
| WO (1) | WO2017068270A1 (https=) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR3068508B1 (fr) * | 2017-06-30 | 2019-07-26 | Soitec | Procede de transfert d'une couche mince sur un substrat support presentant des coefficients de dilatation thermique differents |
| FR3076126A1 (fr) * | 2017-12-26 | 2019-06-28 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Procede de realisation d'un resonateur acoustique a ondes de volume a capacite parasite reduite |
| FR3079346B1 (fr) * | 2018-03-26 | 2020-05-29 | Soitec | Procede de fabrication d'un substrat donneur pour le transfert d'une couche piezoelectrique, et procede de transfert d'une telle couche piezoelectrique |
| EP3948357A4 (en) | 2019-03-29 | 2022-11-02 | Shenzhen Xpectvision Technology Co., Ltd. | SEMICONDUCTOR X-RAY DETECTOR |
| US11606078B2 (en) | 2019-07-18 | 2023-03-14 | Skyworks Solutions, Inc. | Acoustic wave resonator with rotated and tilted interdigital transducer electrode |
| US11750172B2 (en) | 2019-08-21 | 2023-09-05 | Skyworks Solutions, Inc. | Multilayer piezoelectric substrate |
| US11722122B2 (en) | 2019-11-22 | 2023-08-08 | Skyworks Solutions, Inc. | Multilayer piezoelectric substrate with high density electrode |
| CN111883644B (zh) * | 2020-07-23 | 2021-04-13 | 中国科学院上海微系统与信息技术研究所 | 一种异质压电薄膜结构及其制备方法 |
| GB2598665B (en) * | 2020-09-04 | 2025-07-23 | Skyworks Solutions Inc | Multi-layer piezoelectric substrate with controllable delta temperature coefficient of frequency |
| EP3989299B1 (en) * | 2020-10-26 | 2025-08-06 | Université de Franche-Comté | Piezoelectric device comprising flexible single crystalline piezoelectric linbo3 and/or litao3 films integrated on flexible substrate and methods for producing the same |
| US12562711B2 (en) | 2021-07-15 | 2026-02-24 | Skyworks Solutions, Inc. | Wafer level package having enhanced thermal dissipation |
| US12525951B2 (en) | 2021-10-01 | 2026-01-13 | Skyworks Solutions, Inc. | Surface acoustic wave device having a trapezoidal electrode |
| US20230208385A1 (en) | 2021-12-28 | 2023-06-29 | Skyworks Solutions, Inc. | Acoustic wave device with tilted interdigital transducer electrode |
| US12483226B2 (en) | 2021-12-29 | 2025-11-25 | Skyworks Solutions, Inc. | Acoustic wave device with tilted multilayer interdigital transducer electrode |
| US12470199B2 (en) | 2022-01-13 | 2025-11-11 | Skyworks Solutions, Inc. | Acoustic wave device with vertically mass loaded multi-layer interdigital transducer electrode for transverse mode suppression |
| US20230344411A1 (en) | 2022-04-15 | 2023-10-26 | Skyworks Solutions, Inc. | Multiplexer with dies of different acoustic velocity |
Family Cites Families (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW219354B (en) * | 1993-05-31 | 1994-01-21 | Ind Tech Res Inst | Strengthening of multi-layer ceramic/glass articles |
| JPH10297931A (ja) | 1997-04-24 | 1998-11-10 | Matsushita Electric Ind Co Ltd | 複合圧電基板の製造方法 |
| TW449937B (en) * | 1999-02-26 | 2001-08-11 | Matsushita Electronics Corp | Semiconductor device and the manufacturing method thereof |
| FR2816445B1 (fr) * | 2000-11-06 | 2003-07-25 | Commissariat Energie Atomique | Procede de fabrication d'une structure empilee comprenant une couche mince adherant a un substrat cible |
| JP3815424B2 (ja) * | 2002-11-08 | 2006-08-30 | 株式会社村田製作所 | 弾性境界波装置 |
| FR2856192B1 (fr) * | 2003-06-11 | 2005-07-29 | Soitec Silicon On Insulator | Procede de realisation de structure heterogene et structure obtenue par un tel procede |
| US7164222B2 (en) * | 2003-06-26 | 2007-01-16 | Intel Corporation | Film bulk acoustic resonator (FBAR) with high thermal conductivity |
| KR100850861B1 (ko) * | 2004-01-19 | 2008-08-06 | 가부시키가이샤 무라타 세이사쿠쇼 | 탄성 경계파 장치 |
| CN101416570B (zh) * | 2006-06-02 | 2012-05-09 | 株式会社村田制作所 | 多层陶瓷基板及其制造方法以及电子器件 |
| US7608986B2 (en) * | 2006-10-02 | 2009-10-27 | Seiko Epson Corporation | Quartz crystal resonator |
| JP4894861B2 (ja) * | 2006-12-25 | 2012-03-14 | 株式会社村田製作所 | 弾性境界波装置 |
| US7408286B1 (en) * | 2007-01-17 | 2008-08-05 | Rf Micro Devices, Inc. | Piezoelectric substrate for a saw device |
| JP5104761B2 (ja) | 2007-04-09 | 2012-12-19 | 株式会社村田製作所 | セラミック基板およびその製造方法 |
| JP2009124696A (ja) * | 2007-10-26 | 2009-06-04 | Panasonic Electric Works Co Ltd | 共振装置 |
| JP5029699B2 (ja) | 2007-11-30 | 2012-09-19 | 株式会社村田製作所 | セラミック複合多層基板及びその製造方法並びに電子部品 |
| JP4460612B2 (ja) | 2008-02-08 | 2010-05-12 | 富士通メディアデバイス株式会社 | 弾性表面波デバイス及びその製造方法 |
| WO2009139272A1 (ja) * | 2008-05-15 | 2009-11-19 | 株式会社村田製作所 | 多層セラミック基板およびその製造方法 |
| FR2942911B1 (fr) | 2009-03-09 | 2011-05-13 | Soitec Silicon On Insulator | Procede de realisation d'une heterostructure avec adaptation locale de coefficient de dilatation thermique |
| TWI635632B (zh) * | 2013-02-19 | 2018-09-11 | 日本碍子股份有限公司 | 複合基板、彈性波裝置及彈性波裝置的製法 |
| JP6242597B2 (ja) | 2013-06-03 | 2017-12-06 | 太陽誘電株式会社 | 弾性波デバイス及びその製造方法 |
| CN104979440B (zh) * | 2014-04-10 | 2019-01-18 | 传感器电子技术股份有限公司 | 复合衬底 |
| EP3196952B1 (en) * | 2016-01-21 | 2019-06-19 | AT & S Austria Technologie & Systemtechnik Aktiengesellschaft | Mems piezoelectric transducer formed at a pcb support structure |
-
2015
- 2015-10-20 FR FR1559994A patent/FR3042647B1/fr active Active
-
2016
- 2016-10-17 CN CN202210146142.3A patent/CN114512595A/zh active Pending
- 2016-10-17 SG SG11201803341QA patent/SG11201803341QA/en unknown
- 2016-10-17 KR KR1020187014265A patent/KR102671257B1/ko active Active
- 2016-10-17 WO PCT/FR2016/052675 patent/WO2017068270A1/fr not_active Ceased
- 2016-10-17 EP EP16798236.2A patent/EP3365927B1/fr active Active
- 2016-10-17 JP JP2018520170A patent/JP6923518B2/ja active Active
- 2016-10-17 CN CN201680065643.1A patent/CN108271425A/zh active Pending
- 2016-10-17 US US15/769,698 patent/US12603629B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| US20180316329A1 (en) | 2018-11-01 |
| JP2018537888A (ja) | 2018-12-20 |
| EP3365927A1 (fr) | 2018-08-29 |
| KR102671257B1 (ko) | 2024-06-03 |
| EP3365927B1 (fr) | 2021-03-24 |
| CN108271425A (zh) | 2018-07-10 |
| US12603629B2 (en) | 2026-04-14 |
| KR20180074732A (ko) | 2018-07-03 |
| JP6923518B2 (ja) | 2021-08-18 |
| FR3042647B1 (fr) | 2017-12-01 |
| WO2017068270A1 (fr) | 2017-04-27 |
| CN114512595A (zh) | 2022-05-17 |
| FR3042647A1 (fr) | 2017-04-21 |
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