CN108271425A - 复合结构及相关制造方法 - Google Patents

复合结构及相关制造方法 Download PDF

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Publication number
CN108271425A
CN108271425A CN201680065643.1A CN201680065643A CN108271425A CN 108271425 A CN108271425 A CN 108271425A CN 201680065643 A CN201680065643 A CN 201680065643A CN 108271425 A CN108271425 A CN 108271425A
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CN
China
Prior art keywords
layer
acoustic wave
wave device
face
useful layer
Prior art date
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Pending
Application number
CN201680065643.1A
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English (en)
Chinese (zh)
Inventor
帕斯卡·昆纳德
I·拉杜
迪迪埃·朗德吕
E·德斯邦内特斯
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Soitec SA
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Soitec SA
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Application filed by Soitec SA filed Critical Soitec SA
Priority to CN202210146142.3A priority Critical patent/CN114512595A/zh
Publication of CN108271425A publication Critical patent/CN108271425A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/50—Piezoelectric or electrostrictive devices having a stacked or multilayer structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H10N30/853—Ceramic compositions
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
    • H03H9/02031—Characteristics of piezoelectric layers, e.g. cutting angles consisting of ceramic
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02086—Means for compensation or elimination of undesirable effects
    • H03H9/02102—Means for compensation or elimination of undesirable effects of temperature influence
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02086—Means for compensation or elimination of undesirable effects
    • H03H9/02133—Means for compensation or elimination of undesirable effects of stress
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02543—Characteristics of substrate, e.g. cutting angles
    • H03H9/02574—Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders or supports
    • H03H9/0504—Holders or supports for bulk acoustic wave devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/05—Manufacture of multilayered piezoelectric or electrostrictive devices, or parts thereof, e.g. by stacking piezoelectric bodies and electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/072—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/101—Piezoelectric or electrostrictive devices with electrical and mechanical input and output, e.g. having combined actuator and sensor parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H10N30/853—Ceramic compositions
    • H10N30/8542—Alkali metal based oxides, e.g. lithium, sodium or potassium niobates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/88—Mounts; Supports; Enclosures; Casings
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
    • H03H2003/0407—Temperature coefficient

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
CN201680065643.1A 2015-10-20 2016-10-17 复合结构及相关制造方法 Pending CN108271425A (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202210146142.3A CN114512595A (zh) 2015-10-20 2016-10-17 复合结构及相关制造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR1559994 2015-10-20
FR1559994A FR3042647B1 (fr) 2015-10-20 2015-10-20 Structure composite et procede de fabrication associe
PCT/FR2016/052675 WO2017068270A1 (fr) 2015-10-20 2016-10-17 Structure composite et procédé de fabrication associé

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN202210146142.3A Division CN114512595A (zh) 2015-10-20 2016-10-17 复合结构及相关制造方法

Publications (1)

Publication Number Publication Date
CN108271425A true CN108271425A (zh) 2018-07-10

Family

ID=54708030

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201680065643.1A Pending CN108271425A (zh) 2015-10-20 2016-10-17 复合结构及相关制造方法
CN202210146142.3A Pending CN114512595A (zh) 2015-10-20 2016-10-17 复合结构及相关制造方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN202210146142.3A Pending CN114512595A (zh) 2015-10-20 2016-10-17 复合结构及相关制造方法

Country Status (8)

Country Link
US (1) US12603629B2 (https=)
EP (1) EP3365927B1 (https=)
JP (1) JP6923518B2 (https=)
KR (1) KR102671257B1 (https=)
CN (2) CN108271425A (https=)
FR (1) FR3042647B1 (https=)
SG (1) SG11201803341QA (https=)
WO (1) WO2017068270A1 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020198934A1 (en) 2019-03-29 2020-10-08 Shenzhen Xpectvision Technology Co., Ltd. Semiconductor x-ray detector
CN111883644A (zh) * 2020-07-23 2020-11-03 中国科学院上海微系统与信息技术研究所 一种异质压电薄膜结构及其制备方法

Families Citing this family (14)

* Cited by examiner, † Cited by third party
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FR3068508B1 (fr) * 2017-06-30 2019-07-26 Soitec Procede de transfert d'une couche mince sur un substrat support presentant des coefficients de dilatation thermique differents
FR3076126A1 (fr) * 2017-12-26 2019-06-28 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de realisation d'un resonateur acoustique a ondes de volume a capacite parasite reduite
FR3079346B1 (fr) * 2018-03-26 2020-05-29 Soitec Procede de fabrication d'un substrat donneur pour le transfert d'une couche piezoelectrique, et procede de transfert d'une telle couche piezoelectrique
US11606078B2 (en) 2019-07-18 2023-03-14 Skyworks Solutions, Inc. Acoustic wave resonator with rotated and tilted interdigital transducer electrode
US11750172B2 (en) 2019-08-21 2023-09-05 Skyworks Solutions, Inc. Multilayer piezoelectric substrate
US11722122B2 (en) 2019-11-22 2023-08-08 Skyworks Solutions, Inc. Multilayer piezoelectric substrate with high density electrode
GB2598665B (en) * 2020-09-04 2025-07-23 Skyworks Solutions Inc Multi-layer piezoelectric substrate with controllable delta temperature coefficient of frequency
EP3989299B1 (en) * 2020-10-26 2025-08-06 Université de Franche-Comté Piezoelectric device comprising flexible single crystalline piezoelectric linbo3 and/or litao3 films integrated on flexible substrate and methods for producing the same
US12562711B2 (en) 2021-07-15 2026-02-24 Skyworks Solutions, Inc. Wafer level package having enhanced thermal dissipation
US12525951B2 (en) 2021-10-01 2026-01-13 Skyworks Solutions, Inc. Surface acoustic wave device having a trapezoidal electrode
US20230208385A1 (en) 2021-12-28 2023-06-29 Skyworks Solutions, Inc. Acoustic wave device with tilted interdigital transducer electrode
US12483226B2 (en) 2021-12-29 2025-11-25 Skyworks Solutions, Inc. Acoustic wave device with tilted multilayer interdigital transducer electrode
US20230223910A1 (en) 2022-01-13 2023-07-13 Skyworks Solutions, Inc. Method of making acoustic wave device with vertically mass loaded multi-layer interdigital transducer electrode for transverse mode suppression
US12500572B2 (en) 2022-04-15 2025-12-16 Skyworks Solutions, Inc. Multiplexer formed on multi-layer piezoelectric substrate and temperature compensated surface acoustic wave device dies

Citations (18)

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TW219354B (en) * 1993-05-31 1994-01-21 Ind Tech Res Inst Strengthening of multi-layer ceramic/glass articles
TW449937B (en) * 1999-02-26 2001-08-11 Matsushita Electronics Corp Semiconductor device and the manufacturing method thereof
WO2002037556A1 (fr) * 2000-11-06 2002-05-10 Commissariat A L'energie Atomique Procede de fabrication d'une structure empilee comprenant une couche mince adherant a un substrat cible
JP2004159262A (ja) * 2002-11-08 2004-06-03 Murata Mfg Co Ltd 弾性境界波装置
US20040253795A1 (en) * 2003-06-11 2004-12-16 Muriel Martinez Methods of producing a heterogeneous semiconductor structure
CN1788415A (zh) * 2004-01-19 2006-06-14 株式会社村田制作所 边界声波装置
US20080079334A1 (en) * 2006-10-02 2008-04-03 Seiko Epson Corporation Quartz crystal resonator
US20080169724A1 (en) * 2007-01-17 2008-07-17 Rf Micro Devices, Inc. Piezoelectric substrate for a saw device
US20090004438A1 (en) * 2007-04-09 2009-01-01 Murata Manufacturing Co., Ltd. Dielectric ceramic composition, ceramic substrate, and method for producing the same
CN101416570A (zh) * 2006-06-02 2009-04-22 株式会社村田制作所 多层陶瓷基板及其制造方法以及电子器件
JP2009124696A (ja) * 2007-10-26 2009-06-04 Panasonic Electric Works Co Ltd 共振装置
CN101569100A (zh) * 2006-12-25 2009-10-28 株式会社村田制作所 弹性边界波装置
CN101874429A (zh) * 2007-11-30 2010-10-27 株式会社村田制作所 陶瓷复合多层基板及其制造方法以及电子元器件
CN102027813A (zh) * 2008-05-15 2011-04-20 株式会社村田制作所 多层陶瓷基板及其制造方法
CN102341900A (zh) * 2009-03-09 2012-02-01 S.O.I.Tec绝缘体上硅技术公司 制造热膨胀系数局部适应的异质结构的方法
WO2014129432A1 (ja) * 2013-02-19 2014-08-28 日本碍子株式会社 複合基板、弾性波デバイス及び弾性波デバイスの製法
CN104205631A (zh) * 2012-03-26 2014-12-10 株式会社村田制作所 弹性波装置及其制造方法
CN104979440A (zh) * 2014-04-10 2015-10-14 传感器电子技术股份有限公司 复合衬底

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JP4460612B2 (ja) 2008-02-08 2010-05-12 富士通メディアデバイス株式会社 弾性表面波デバイス及びその製造方法
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EP3196952B1 (en) * 2016-01-21 2019-06-19 AT & S Austria Technologie & Systemtechnik Aktiengesellschaft Mems piezoelectric transducer formed at a pcb support structure

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TW219354B (en) * 1993-05-31 1994-01-21 Ind Tech Res Inst Strengthening of multi-layer ceramic/glass articles
TW449937B (en) * 1999-02-26 2001-08-11 Matsushita Electronics Corp Semiconductor device and the manufacturing method thereof
WO2002037556A1 (fr) * 2000-11-06 2002-05-10 Commissariat A L'energie Atomique Procede de fabrication d'une structure empilee comprenant une couche mince adherant a un substrat cible
JP2004159262A (ja) * 2002-11-08 2004-06-03 Murata Mfg Co Ltd 弾性境界波装置
US20040253795A1 (en) * 2003-06-11 2004-12-16 Muriel Martinez Methods of producing a heterogeneous semiconductor structure
CN1788415A (zh) * 2004-01-19 2006-06-14 株式会社村田制作所 边界声波装置
CN101416570A (zh) * 2006-06-02 2009-04-22 株式会社村田制作所 多层陶瓷基板及其制造方法以及电子器件
JPWO2007142112A1 (ja) * 2006-06-02 2009-10-22 株式会社村田製作所 多層セラミック基板およびその製造方法ならびに電子部品
US20080079334A1 (en) * 2006-10-02 2008-04-03 Seiko Epson Corporation Quartz crystal resonator
CN101569100A (zh) * 2006-12-25 2009-10-28 株式会社村田制作所 弹性边界波装置
US20080169724A1 (en) * 2007-01-17 2008-07-17 Rf Micro Devices, Inc. Piezoelectric substrate for a saw device
US20090004438A1 (en) * 2007-04-09 2009-01-01 Murata Manufacturing Co., Ltd. Dielectric ceramic composition, ceramic substrate, and method for producing the same
JP2009124696A (ja) * 2007-10-26 2009-06-04 Panasonic Electric Works Co Ltd 共振装置
CN101874429A (zh) * 2007-11-30 2010-10-27 株式会社村田制作所 陶瓷复合多层基板及其制造方法以及电子元器件
CN102027813A (zh) * 2008-05-15 2011-04-20 株式会社村田制作所 多层陶瓷基板及其制造方法
CN102341900A (zh) * 2009-03-09 2012-02-01 S.O.I.Tec绝缘体上硅技术公司 制造热膨胀系数局部适应的异质结构的方法
CN104205631A (zh) * 2012-03-26 2014-12-10 株式会社村田制作所 弹性波装置及其制造方法
WO2014129432A1 (ja) * 2013-02-19 2014-08-28 日本碍子株式会社 複合基板、弾性波デバイス及び弾性波デバイスの製法
CN104979440A (zh) * 2014-04-10 2015-10-14 传感器电子技术股份有限公司 复合衬底

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020198934A1 (en) 2019-03-29 2020-10-08 Shenzhen Xpectvision Technology Co., Ltd. Semiconductor x-ray detector
CN111883644A (zh) * 2020-07-23 2020-11-03 中国科学院上海微系统与信息技术研究所 一种异质压电薄膜结构及其制备方法

Also Published As

Publication number Publication date
SG11201803341QA (en) 2018-05-30
US20180316329A1 (en) 2018-11-01
FR3042647A1 (fr) 2017-04-21
JP6923518B2 (ja) 2021-08-18
FR3042647B1 (fr) 2017-12-01
EP3365927A1 (fr) 2018-08-29
JP2018537888A (ja) 2018-12-20
US12603629B2 (en) 2026-04-14
CN114512595A (zh) 2022-05-17
KR102671257B1 (ko) 2024-06-03
EP3365927B1 (fr) 2021-03-24
KR20180074732A (ko) 2018-07-03
WO2017068270A1 (fr) 2017-04-27

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Application publication date: 20180710

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