JP2018533840A - 局所的な半導体ウエハの薄膜化 - Google Patents
局所的な半導体ウエハの薄膜化 Download PDFInfo
- Publication number
- JP2018533840A JP2018533840A JP2018517341A JP2018517341A JP2018533840A JP 2018533840 A JP2018533840 A JP 2018533840A JP 2018517341 A JP2018517341 A JP 2018517341A JP 2018517341 A JP2018517341 A JP 2018517341A JP 2018533840 A JP2018533840 A JP 2018533840A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor substrate
- wafer
- back surface
- etching
- electronic device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 79
- 238000000034 method Methods 0.000 claims abstract description 89
- 239000000758 substrate Substances 0.000 claims abstract description 28
- 239000010410 layer Substances 0.000 claims description 46
- 238000005530 etching Methods 0.000 claims description 20
- 238000012545 processing Methods 0.000 claims description 18
- 239000010949 copper Substances 0.000 claims description 17
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 16
- 229910052802 copper Inorganic materials 0.000 claims description 15
- 238000001465 metallisation Methods 0.000 claims description 12
- 238000005137 deposition process Methods 0.000 claims description 11
- 239000011241 protective layer Substances 0.000 claims description 11
- 238000009713 electroplating Methods 0.000 claims description 8
- 238000005240 physical vapour deposition Methods 0.000 claims description 8
- 238000005229 chemical vapour deposition Methods 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 7
- 239000004020 conductor Substances 0.000 claims description 6
- 238000000708 deep reactive-ion etching Methods 0.000 claims description 6
- 238000012546 transfer Methods 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 5
- 238000000206 photolithography Methods 0.000 claims description 4
- 230000005669 field effect Effects 0.000 claims description 3
- 238000010297 mechanical methods and process Methods 0.000 claims 1
- 230000005226 mechanical processes and functions Effects 0.000 claims 1
- 238000000059 patterning Methods 0.000 claims 1
- 238000011282 treatment Methods 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 105
- 229910052751 metal Inorganic materials 0.000 description 13
- 239000002184 metal Substances 0.000 description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 230000000903 blocking effect Effects 0.000 description 7
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000013590 bulk material Substances 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- 238000007517 polishing process Methods 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000003792 electrolyte Substances 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000009623 Bosch process Methods 0.000 description 1
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 1
- 239000004341 Octafluorocyclobutane Substances 0.000 description 1
- 229910018503 SF6 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 229910001431 copper ion Inorganic materials 0.000 description 1
- 229910000365 copper sulfate Inorganic materials 0.000 description 1
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- BCCOBQSFUDVTJQ-UHFFFAOYSA-N octafluorocyclobutane Chemical compound FC1(F)C(F)(F)C(F)(F)C1(F)F BCCOBQSFUDVTJQ-UHFFFAOYSA-N 0.000 description 1
- 235000019407 octafluorocyclobutane Nutrition 0.000 description 1
- 238000013386 optimize process Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 1
- 229960000909 sulfur hexafluoride Drugs 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3083—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
- H01L21/31055—Planarisation of the insulating layers involving a dielectric removal step the removal being a chemical etching step, e.g. dry etching
- H01L21/31056—Planarisation of the insulating layers involving a dielectric removal step the removal being a chemical etching step, e.g. dry etching the removal being a selective chemical etching step, e.g. selective dry etching through a mask
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3736—Metallic materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/03—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/03—Manufacturing methods
- H01L2224/034—Manufacturing methods by blanket deposition of the material of the bonding area
- H01L2224/03444—Manufacturing methods by blanket deposition of the material of the bonding area in gaseous form
- H01L2224/0345—Physical vapour deposition [PVD], e.g. evaporation, or sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/03—Manufacturing methods
- H01L2224/034—Manufacturing methods by blanket deposition of the material of the bonding area
- H01L2224/03444—Manufacturing methods by blanket deposition of the material of the bonding area in gaseous form
- H01L2224/03452—Chemical vapour deposition [CVD], e.g. laser CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/03—Manufacturing methods
- H01L2224/034—Manufacturing methods by blanket deposition of the material of the bonding area
- H01L2224/0346—Plating
- H01L2224/03462—Electroplating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/05001—Internal layers
- H01L2224/05099—Material
- H01L2224/051—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/05144—Gold [Au] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/05001—Internal layers
- H01L2224/05099—Material
- H01L2224/051—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/05147—Copper [Cu] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/05001—Internal layers
- H01L2224/05099—Material
- H01L2224/051—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/05155—Nickel [Ni] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/05001—Internal layers
- H01L2224/05099—Material
- H01L2224/051—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
- H01L2224/05166—Titanium [Ti] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0555—Shape
- H01L2224/05556—Shape in side view
- H01L2224/05559—Shape in side view non conformal layer on a patterned surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/05647—Copper [Cu] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/061—Disposition
- H01L2224/0618—Disposition being disposed on at least two different sides of the body, e.g. dual array
- H01L2224/06181—On opposite sides of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/1015—Shape
- H01L2924/10155—Shape being other than a cuboid
- H01L2924/10158—Shape being other than a cuboid at the passive surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
- H01L2924/3511—Warping
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Plasma & Fusion (AREA)
- Electrodes Of Semiconductors (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Bipolar Transistors (AREA)
- Drying Of Semiconductors (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
2 前面
3 背面
4 電子デバイス
5 保護層
6 非導電層
7 第2の層
8a 幾何学的パターン
8b 幾何学的パターン
9 転写されるパターン
12 金属化層
13 凹部
14 金属化層
16 シード層
18 活性領域
20 終端領域
Claims (23)
- 少なくとも1つの電子デバイスがその上又は内部に配された前面を有する半導体基板を提供する段階、
前記半導体基板の背面にマスクを付ける段階、
選択された幾何学的パターンで前記マスクをパターニングする段階、及び、
前記選択された幾何学的パターンを前記マスクから前記半導体基板の背面に転写するために、前記半導体基板の背面をエッチングする段階、
を含む半導体基板を薄膜化する方法。 - 前記半導体基板の背面に転写される前記選択された幾何学的パターンが、複数の凹部を含む、請求項1に記載の方法。
- 前記複数の凹部が、1つ以上の溝、トレンチ、穴又はそれらの組み合わせを含む、請求項2に記載の方法。
- 前記マスクを付ける段階の前に、前記半導体基板の前面に保護層を付ける段階をさらに含む、請求項1に記載の方法。
- 前記半導体基板の背面に保護層を付ける段階をさらに含み、前記マスクを付ける段階が、前記保護層上にマスクを付ける段階を含む、請求項1に記載の方法。
- 前記マスクが、フォトリソグラフィ処理に適したポリマー材料を含む、請求項1に記載の方法。
- 前記半導体基板の背面をエッチングし、最終的な絶縁保護層をエッチングする段階が、深掘り反応性イオンエッチング処理を用いて前記半導体基板の背面をエッチングする段階を含む、請求項1に記載の方法。
- 前記半導体基板の背面をエッチングする段階が、ボッシュ法を用いて前記半導体基板の背面をエッチングする段階を含む、請求項1に記載の方法。
- 前記電子デバイスがダイオードを含む、請求項1に記載の方法。
- 前記電子デバイスがバイポーラトランジスタを含む、請求項1に記載の方法。
- 前記電子デバイスが電力電界効果トランジスタを含む、請求項1に記載の方法。
- 前記電子デバイスがMOSFETを含む、請求項1に記載の方法。
- 前記半導体基板の背面をエッチングした後に、前記半導体基板の背面に1つ以上の追加の処理を実行する段階をさらに含む、請求項1に記載の方法。
- 前記1つ以上の追加の処理が、堆積、フォトリソグラフィ、熱的処理、機械的処理及びドーピング処理からなる群から選択される、請求項13に記載の方法。
- 前記1つ以上の追加の処理が、金属堆積処理を含む、請求項13に記載の方法。
- 前記1つ以上の追加の処理が、前記パターン形成された裏面構造体に堆積物を充填するための導電性材料堆積処理を含む、請求項13に記載の方法。
- 前記追加の導電性材料堆積処理を実施する前に、前記半導体基板の背面上にシード層を堆積させる段階をさらに含む、請求項16に記載の方法。
- 前記半導体基板が、活性領域及び終端領域を含み、前記電子デバイスが、前記活性領域上又は内部に形成され、前記背面が前記活性領域内でのみ薄膜化されるように、前記終端領域ではなく前記活性領域内の前記半導体基板の背面をエッチングする段階をさらに含み、請求項1に記載の方法。
- 前記電子デバイスが、絶縁ゲートバイポーラトランジスタ(IGBT)、電界効果トランジスタ(FET)、MOSFET及びダイオードからなる群から選択される、請求項18に記載の方法。
- 請求項1に記載の方法に従って製造された半導体基板。
- 前記基板の前面に配された電子デバイスをさらに備える、請求項20に記載の半導体基板。
- 前記導電性材料が銅であり、前記導電性材料堆積処理が電気めっき処理である、請求項16に記載の方法。
- 前記1つ以上の付加の処理が、前記パターン形成された背面構造体における凹部を充填するための化学気相堆積処理(CVD)又は物理気相堆積(PVD)処理を含む、請求項16に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/884,090 | 2015-10-15 | ||
US14/884,090 US10043676B2 (en) | 2015-10-15 | 2015-10-15 | Local semiconductor wafer thinning |
PCT/US2016/054287 WO2017065981A1 (en) | 2015-10-15 | 2016-09-29 | Local semiconductor wafer thinning |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018533840A true JP2018533840A (ja) | 2018-11-15 |
JP7355496B2 JP7355496B2 (ja) | 2023-10-03 |
Family
ID=58517789
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018517341A Active JP7355496B2 (ja) | 2015-10-15 | 2016-09-29 | 局所的な半導体ウエハの薄膜化 |
Country Status (8)
Country | Link |
---|---|
US (1) | US10043676B2 (ja) |
EP (1) | EP3363040A4 (ja) |
JP (1) | JP7355496B2 (ja) |
KR (1) | KR102135124B1 (ja) |
CN (1) | CN108140568B (ja) |
IL (1) | IL258223B2 (ja) |
TW (1) | TWI632608B (ja) |
WO (1) | WO2017065981A1 (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017123441A (ja) * | 2016-01-08 | 2017-07-13 | 三菱電機株式会社 | 半導体レーザ素子の製造方法 |
KR102038531B1 (ko) * | 2018-02-14 | 2019-10-31 | 주식회사 예스파워테크닉스 | 전기적 특성이 향상된 배면 구조를 가진 전력 반도체 |
CN111463141B (zh) * | 2019-01-18 | 2023-05-02 | 芯恩(青岛)集成电路有限公司 | 一种提高晶圆探针台利用率的方法 |
US10727216B1 (en) | 2019-05-10 | 2020-07-28 | Sandisk Technologies Llc | Method for removing a bulk substrate from a bonded assembly of wafers |
TWI695467B (zh) * | 2019-07-10 | 2020-06-01 | 國立交通大學 | 積體電路散熱結構 |
CN111599679B (zh) * | 2020-05-29 | 2023-03-07 | 上海华虹宏力半导体制造有限公司 | 半导体器件的金属化方法 |
Citations (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000040825A (ja) * | 1998-06-30 | 2000-02-08 | Harris Corp | 減少した有効基板固有抵抗を有する半導体デバイス及びその製造方法 |
JP2002319589A (ja) * | 2001-04-20 | 2002-10-31 | Hitachi Ltd | 半導体装置およびこれを用いた電力増幅器 |
JP2006012889A (ja) * | 2004-06-22 | 2006-01-12 | Canon Inc | 半導体チップの製造方法および半導体装置の製造方法 |
JP2006041135A (ja) * | 2004-07-26 | 2006-02-09 | Sumitomo Bakelite Co Ltd | 電子デバイスおよびその製造方法 |
JP2006156658A (ja) * | 2004-11-29 | 2006-06-15 | Toshiba Corp | 半導体装置 |
JP2007129166A (ja) * | 2005-11-07 | 2007-05-24 | Toshiba Corp | 半導体装置及びその製造方法 |
JP2009182217A (ja) * | 2008-01-31 | 2009-08-13 | Sumitomo Electric Ind Ltd | 半導体装置およびその製造方法 |
JP2010003906A (ja) * | 2008-06-20 | 2010-01-07 | Fujitsu Microelectronics Ltd | 半導体装置及びその製造方法 |
JP2011035322A (ja) * | 2009-08-05 | 2011-02-17 | Panasonic Corp | 半導体装置およびその製造方法 |
JP2012124484A (ja) * | 2010-12-07 | 2012-06-28 | Imec | 分離トレンチの形成方法 |
JP2013201413A (ja) * | 2012-02-21 | 2013-10-03 | Rohm Co Ltd | 半導体装置および半導体装置の製造方法 |
JP2014047269A (ja) * | 2012-08-30 | 2014-03-17 | Toshiba Corp | 自己組織化パターン形成用材料およびパターン形成方法 |
JP2014093369A (ja) * | 2012-11-01 | 2014-05-19 | Panasonic Corp | エピタキシャルウェハ及びその製造方法 |
Family Cites Families (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6528351B1 (en) * | 2001-09-24 | 2003-03-04 | Jigsaw Tek, Inc. | Integrated package and methods for making same |
CN100369235C (zh) * | 2001-10-01 | 2008-02-13 | 埃克赛尔技术有限公司 | 加工衬底的方法及系统 |
JP2004119718A (ja) | 2002-09-26 | 2004-04-15 | Shinko Electric Ind Co Ltd | 薄型半導体チップの製造方法 |
US7132321B2 (en) * | 2002-10-24 | 2006-11-07 | The United States Of America As Represented By The Secretary Of The Navy | Vertical conducting power semiconductor devices implemented by deep etch |
JP3908148B2 (ja) * | 2002-10-28 | 2007-04-25 | シャープ株式会社 | 積層型半導体装置 |
TWI221340B (en) * | 2003-05-30 | 2004-09-21 | Ind Tech Res Inst | Thin film transistor and method for fabricating thereof |
US7316979B2 (en) * | 2003-08-01 | 2008-01-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and apparatus for providing an integrated active region on silicon-on-insulator devices |
FR2863773B1 (fr) * | 2003-12-12 | 2006-05-19 | Atmel Grenoble Sa | Procede de fabrication de puces electroniques en silicium aminci |
US7507638B2 (en) | 2004-06-30 | 2009-03-24 | Freescale Semiconductor, Inc. | Ultra-thin die and method of fabricating same |
JP2006253402A (ja) * | 2005-03-10 | 2006-09-21 | Nec Electronics Corp | 半導体装置の製造方法 |
JP2007266596A (ja) * | 2006-03-02 | 2007-10-11 | Semiconductor Energy Lab Co Ltd | 回路パターン及び薄膜トランジスタの作製方法、並びに該薄膜トランジスタを搭載した電子機器 |
US20070259463A1 (en) | 2006-05-02 | 2007-11-08 | Youssef Abedini | Wafer-level method for thinning imaging sensors for backside illumination |
DE602007006507D1 (de) * | 2006-08-04 | 2010-06-24 | Nxp Bv | Verfahren zur herstellung eines doppelgate-transistors |
JP4840200B2 (ja) * | 2007-03-09 | 2011-12-21 | パナソニック株式会社 | 半導体チップの製造方法 |
TW200845302A (en) | 2007-05-09 | 2008-11-16 | Promos Technologies Inc | A method of two-step backside etching |
US7919801B2 (en) * | 2007-10-26 | 2011-04-05 | Hvvi Semiconductors, Inc. | RF power transistor structure and a method of forming the same |
TW200935506A (en) * | 2007-11-16 | 2009-08-16 | Panasonic Corp | Plasma dicing apparatus and semiconductor chip manufacturing method |
WO2012051133A2 (en) * | 2010-10-12 | 2012-04-19 | Io Semiconductor, Inc. | Vertical semiconductor device with thinned substrate |
US8703581B2 (en) * | 2011-06-15 | 2014-04-22 | Applied Materials, Inc. | Water soluble mask for substrate dicing by laser and plasma etch |
US8496842B2 (en) * | 2011-09-12 | 2013-07-30 | Texas Instruments Incorporated | MEMS device fabricated with integrated circuit |
KR101594270B1 (ko) * | 2011-10-28 | 2016-02-15 | 인텔 코포레이션 | 듀얼 다마신 유형 접근법을 이용하여 제조된 미세 피치 백사이드 금속 재배선 라인들과 결합된 스루-실리콘 비아들을 포함하는 3d 상호연결 구조체 |
US9449913B2 (en) * | 2011-10-28 | 2016-09-20 | Intel Corporation | 3D interconnect structure comprising fine pitch single damascene backside metal redistribution lines combined with through-silicon vias |
KR20140009731A (ko) | 2012-07-12 | 2014-01-23 | 삼성전자주식회사 | 방열부를 포함하는 반도체 칩 및 그 반도체 칩 제조 방법 |
US9142614B2 (en) | 2013-07-05 | 2015-09-22 | Taiwan Semiconductor Manufacturing Company Limited | Isolation trench through backside of substrate |
KR20150118638A (ko) * | 2014-04-14 | 2015-10-23 | 에스케이하이닉스 주식회사 | 이미지 센서 및 그 제조 방법 |
US8912078B1 (en) * | 2014-04-16 | 2014-12-16 | Applied Materials, Inc. | Dicing wafers having solder bumps on wafer backside |
-
2015
- 2015-10-15 US US14/884,090 patent/US10043676B2/en active Active
-
2016
- 2016-07-25 TW TW105123461A patent/TWI632608B/zh active
- 2016-09-29 EP EP16855948.2A patent/EP3363040A4/en not_active Withdrawn
- 2016-09-29 JP JP2018517341A patent/JP7355496B2/ja active Active
- 2016-09-29 KR KR1020187013408A patent/KR102135124B1/ko active IP Right Grant
- 2016-09-29 WO PCT/US2016/054287 patent/WO2017065981A1/en active Application Filing
- 2016-09-29 CN CN201680059649.8A patent/CN108140568B/zh active Active
-
2018
- 2018-03-19 IL IL258223A patent/IL258223B2/en unknown
Patent Citations (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000040825A (ja) * | 1998-06-30 | 2000-02-08 | Harris Corp | 減少した有効基板固有抵抗を有する半導体デバイス及びその製造方法 |
JP2002319589A (ja) * | 2001-04-20 | 2002-10-31 | Hitachi Ltd | 半導体装置およびこれを用いた電力増幅器 |
JP2006012889A (ja) * | 2004-06-22 | 2006-01-12 | Canon Inc | 半導体チップの製造方法および半導体装置の製造方法 |
JP2006041135A (ja) * | 2004-07-26 | 2006-02-09 | Sumitomo Bakelite Co Ltd | 電子デバイスおよびその製造方法 |
JP2006156658A (ja) * | 2004-11-29 | 2006-06-15 | Toshiba Corp | 半導体装置 |
JP2007129166A (ja) * | 2005-11-07 | 2007-05-24 | Toshiba Corp | 半導体装置及びその製造方法 |
JP2009182217A (ja) * | 2008-01-31 | 2009-08-13 | Sumitomo Electric Ind Ltd | 半導体装置およびその製造方法 |
JP2010003906A (ja) * | 2008-06-20 | 2010-01-07 | Fujitsu Microelectronics Ltd | 半導体装置及びその製造方法 |
JP2011035322A (ja) * | 2009-08-05 | 2011-02-17 | Panasonic Corp | 半導体装置およびその製造方法 |
JP2012124484A (ja) * | 2010-12-07 | 2012-06-28 | Imec | 分離トレンチの形成方法 |
JP2013201413A (ja) * | 2012-02-21 | 2013-10-03 | Rohm Co Ltd | 半導体装置および半導体装置の製造方法 |
JP2014047269A (ja) * | 2012-08-30 | 2014-03-17 | Toshiba Corp | 自己組織化パターン形成用材料およびパターン形成方法 |
JP2014093369A (ja) * | 2012-11-01 | 2014-05-19 | Panasonic Corp | エピタキシャルウェハ及びその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
CN108140568A (zh) | 2018-06-08 |
KR102135124B1 (ko) | 2020-07-20 |
IL258223B1 (en) | 2023-03-01 |
CN108140568B (zh) | 2023-02-17 |
EP3363040A1 (en) | 2018-08-22 |
US10043676B2 (en) | 2018-08-07 |
TWI632608B (zh) | 2018-08-11 |
IL258223A (en) | 2018-05-31 |
IL258223B2 (en) | 2023-07-01 |
US20170110329A1 (en) | 2017-04-20 |
EP3363040A4 (en) | 2019-05-08 |
TW201725621A (zh) | 2017-07-16 |
WO2017065981A1 (en) | 2017-04-20 |
JP7355496B2 (ja) | 2023-10-03 |
KR20180058834A (ko) | 2018-06-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP7355496B2 (ja) | 局所的な半導体ウエハの薄膜化 | |
JP6566068B2 (ja) | トレンチゲート型半導体装置の製造方法 | |
JP5525940B2 (ja) | 半導体装置および半導体装置の製造方法 | |
US8143655B2 (en) | Trench schottky barrier diode with differential oxide thickness | |
US6825073B1 (en) | Schottky diode with high field breakdown and low reverse leakage current | |
US8993427B2 (en) | Method for manufacturing rectifier with vertical MOS structure | |
US11545362B2 (en) | Manufacturing method of a semiconductor device with efficient edge structure | |
JP2002009082A (ja) | 半導体装置および半導体装置の製造方法 | |
CN113345807B (zh) | 一种半导体器件制备方法 | |
CN207947287U (zh) | 一种碳化硅肖特基二极管 | |
CN210607277U (zh) | 具有肖特基金属结的半导体装置 | |
KR101667669B1 (ko) | 쇼트키 배리어 다이오드 및 그 제조방법 | |
US20240162302A1 (en) | Split gate power device and method of manufacturing the same | |
US20240162040A1 (en) | Manufacturing method of a semiconductor device with efficient edge structure | |
CN108701694B (zh) | 高压碳化硅肖特基二极管倒装芯片阵列 | |
CN116978957A (zh) | 一种快恢复二极管及其制备方法 | |
CN114843191A (zh) | 沟槽栅mosfet的制造方法 | |
CN111192826A (zh) | 双势垒沟槽外延高压pin芯片及其制造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20190724 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20200914 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20201208 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20210315 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20210405 |
|
C60 | Trial request (containing other claim documents, opposition documents) |
Free format text: JAPANESE INTERMEDIATE CODE: C60 Effective date: 20210804 |
|
C22 | Notice of designation (change) of administrative judge |
Free format text: JAPANESE INTERMEDIATE CODE: C22 Effective date: 20211213 |
|
C22 | Notice of designation (change) of administrative judge |
Free format text: JAPANESE INTERMEDIATE CODE: C22 Effective date: 20220322 |
|
C13 | Notice of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: C13 Effective date: 20220411 |
|
C22 | Notice of designation (change) of administrative judge |
Free format text: JAPANESE INTERMEDIATE CODE: C22 Effective date: 20220418 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20220711 |
|
C22 | Notice of designation (change) of administrative judge |
Free format text: JAPANESE INTERMEDIATE CODE: C22 Effective date: 20220711 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20221011 |
|
C13 | Notice of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: C13 Effective date: 20230110 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20230315 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20230705 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20230921 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7355496 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |