JP2018531520A - 半田パッド、半田パッドを含む半導体チップ及びその形成方法 - Google Patents
半田パッド、半田パッドを含む半導体チップ及びその形成方法 Download PDFInfo
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
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Abstract
Description
(1)第1誘電体層315上にバリヤ層3121を成膜するステップ。ここでバリヤ層3121はチタンで作られ、このバリヤ層3121は第1誘電体層315に密着して一体化される。
(2)バリヤ層3121上に中間金属層3122を成膜するステップ。ここで中間金属層3122はアルミニウム−銅合金で作られ、バリヤ層3121は中間金属層に十分接合される。
(3)アルミニウム−銅合金層3112上に反射防止層3123を成膜するステップ。ここで反射防止層3123は窒化チタンで作られ、かつ反射防止層3123はエッチング工程における反射防止層として作用する。
(4)ホトレジストを用いてシリコンウェハをインプリントし、エッチング工程を実行することによりコンタクトパッドと同一形状を有する第2金属層312を形成するステップ。
(1)第2金属層312の形成後に第2金属層312上に第2誘電体層316を形成するステップ。ここで第2誘電体層316は酸化シリコン又は窒化シリコンで作られてよい。
(2)第2誘電体層316をエッチングして誘電体層316に開口を形成するステップ。ここで第2金属層312はこの開口の底部に露出される。
(3)開口の底部および側壁にバリヤ層3162を成膜するステップ。ここでバリヤ層3162はチタンで作られる。
(4)バリヤ層3162の上に拡散バリヤ層3163を成膜するステップ。ここで拡散バリヤ層は窒化チタンで作られる。
(5)開口を充填するフィラー金属3164を開口内に成膜するステップ。この実施形態ではフィラー金属3164は、空洞無しで開口を充填可能でありかつ良好な研削、研磨特性を有するタングステンで作られ、バリヤ層3162がフィラー金属3164と第2誘電体層316の間の接着剤の役割をし、拡散バリヤ層3163はフィラー金属3164の拡散阻止のために使用される。
(6)フィラー金属3164を研削および研磨して、フィラー金属3164の高さを第2誘電体層316の表面と同じ高さとするステップ。
Claims (18)
- 少なくとも2つの金属層と、
隣接する金属層の間に位置する誘電体層と、
を備えるコンタクトパッドであって、
前記コンタクトパッド上にレーザ穴あけ領域が配置され、前記レーザ穴あけ領域に対応する前記誘電体層の位置に開口が配置され、前記開口に金属プラグが配置され、かつ前記金属プラグの両端はそれぞれ隣接する金属層に接触している、コンタクトパッド。 - 前記金属プラグは、
前記金属層に接触する前記開口の底部と前記開口の側壁に形成されたバリヤ層と、
前記バリヤ層上に位置する拡散バリヤ層と、
前記拡散バリヤ層上に位置して前記開口を充填するフィラー金属と、
を備える、請求項1に記載のコンタクトパッド。 - 前記フィラー金属はタングステンで作られ、前記バリヤ層はチタンで作られ、かつ前記拡散バリヤ層は窒化チタンで作られている、請求項2に記載のコンタクトパッド。
- 前記誘電体層内に前記開口の位置とは異なる領域に少なくとも1つの開口をさらに備え、前記少なくとも1つの開口内に導電性プラグが形成され、かつ前記導電性プラグの両端が隣接する金属層にそれぞれ電気的に接続されている、請求項3に記載のコンタクトパッド。
- 前記導電性プラグ及び前記金属プラグは、同一材料から作られかつ同一構造を有する、請求項4に記載のコンタクトパッド。
- 前記金属層は、前記コンタクトパッドの保護層又は誘電体層に密着して一体化されたバリヤ層を備え、中間金属層が前記バリヤ層に接合され、かつ反射防止層が前記中間金属層に成膜されている、請求項1に記載のコンタクトパッド。
- 前記バリヤ層はチタンで作られ、前記中間金属層はアルミニウム−銅合金で作られ、かつ前記反射防止層は窒化チタンで作られている、請求項6に記載のコンタクトパッド。
- 前記レーザ穴あけ領域にレーザ穴が配置され、かつ前記レーザ穴は前記金属層と前記金属プラグを順次貫通している、請求項1に記載のコンタクトパッド。
- 請求項1〜請求項8のいずれか1項に記載のコンタクトパッドを有する、半導体チップ。
- 半導体チップのコンタクトパッドを形成する方法であって、
(a)金属層を形成するステップと、
(b)前記金属層上に誘電体層を形成するステップと、
(c)前記誘電体層内に金属プラグを形成するステップであって、前記金属プラグはレーザ穴あけ領域内に位置するステップと、
(d)前記誘電体層上に別の金属層を形成するステップと、
を含む、コンタクトパッドの形成方法。 - 前記誘電体層内に前記金属プラグを形成するステップが、
エッチング工程を用いて前記誘電体層に開口を形成するステップと、
成膜工程を用いて前記開口の底部と前記開口の側壁にバリヤ層を形成するステップと、
前記成膜工程を用いて前記バリヤ層上に拡散バリヤ層を形成するステップと、
前記成膜工程を用いて前記拡散バリヤ層の前記開口を充填するフィラー金属を形成するステップと、
を含む、請求項10に記載のコンタクトパッドの形成方法。 - 前記フィラー金属はタングステンで作られ、前記バリヤ層はチタンで作られ、かつ前記拡散バリヤ層は窒化チタンで作られる、請求項11に記載のコンタクトパッドの形成方法。
- 前記開口の位置とは別の領域に少なくとも1つの開口を配置し、前記少なくとも1つの開口内に導電性プラグを形成するステップをさらに含み、
前記導電性プラグの両端は、隣接する金属層にそれぞれ電気的に接続される、請求項12に記載のコンタクトパッドの形成方法。 - 前記導電性プラグと前記金属プラグは同一の材料と方法で形成される、請求項13に記載のコンタクトパッドの形成方法。
- 前記金属層の形成ステップは、
成膜工程を用いて前記コンタクトパッドの保護層又は前記誘電体層にバリヤ層を成膜するステップと、
前記成膜工程を用いて前記バリヤ層上に中間金属層を成膜するステップと、
前記成膜工程を用いて前記中間金属層上に反射防止層を成膜するステップと、
ホトレジストを用いてシリコンウェハをインプリントし、エッチング工程を実行することによって前記コンタクトパッドと同一形状を有する金属層を形成するステップと、
を含む、請求項10に記載のコンタクトパッドの形成方法。 - 前記バリヤ層はチタンで作られ、前記中間金属層はアルミニウム−銅合金で作られ、かつ前記反射防止層は窒化チタンで作られる、請求項15に記載のコンタクトパッドの形成方法。
- 前記金属層と前記金属プラグを順次貫通するレーザ穴が、前記コンタクトパッドの前記レーザ穴あけ領域に形成される、請求項10に記載のコンタクトパッドの形成方法。
- 前記ステップ(b)からステップ(d)が複数の金属層と誘電体層を形成するために反復される、請求項10に記載のコンタクトパッドの形成方法。
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CN201511009450.8A CN105489582B (zh) | 2015-12-29 | 2015-12-29 | 半导体芯片及其形成方法 |
PCT/CN2016/102136 WO2017113932A1 (zh) | 2015-12-29 | 2016-10-14 | 焊垫、包括焊垫的半导体芯片及形成方法 |
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