JP2018512812A - パワーｆｅｔのカスコードスタックの駆動 - Google Patents

パワーｆｅｔのカスコードスタックの駆動 Download PDF

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Publication number
JP2018512812A
JP2018512812A JP2017550205A JP2017550205A JP2018512812A JP 2018512812 A JP2018512812 A JP 2018512812A JP 2017550205 A JP2017550205 A JP 2017550205A JP 2017550205 A JP2017550205 A JP 2017550205A JP 2018512812 A JP2018512812 A JP 2018512812A
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JP
Japan
Prior art keywords
control terminal
output
transistor device
circuit
transistor
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Pending
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JP2017550205A
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English (en)
Japanese (ja)
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JP2018512812A5 (enExample
Inventor
ヴィシャール・グプタ
チファン・ユン
ジョセフ・ダンカン
Original Assignee
クアルコム，インコーポレイテッド
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Application filed by クアルコム，インコーポレイテッド filed Critical クアルコム，インコーポレイテッド
Publication of JP2018512812A publication Critical patent/JP2018512812A/ja
Publication of JP2018512812A5 publication Critical patent/JP2018512812A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175—Coupling arrangements; Interface arrangements
    • H03K19/0185—Coupling arrangements; Interface arrangements using field effect transistors only
    • H03K19/018507—Interface arrangements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/217—Class D power amplifiers; Switching amplifiers
    • H03F3/2173—Class D power amplifiers; Switching amplifiers of the bridge type
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/10—Modifications for increasing the maximum permissible switched voltage
    • H03K17/102—Modifications for increasing the maximum permissible switched voltage in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/30—Indexing scheme relating to single-ended push-pull [SEPP]; Phase-splitters therefor
    • H03F2203/30015—An input signal dependent control signal controls the bias of an output stage in the SEPP
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/30—Indexing scheme relating to single-ended push-pull [SEPP]; Phase-splitters therefor
    • H03F2203/30084—Indexing scheme relating to single-ended push-pull [SEPP]; Phase-splitters therefor the pull circuit of the SEPP amplifier being a cascode circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/30—Indexing scheme relating to single-ended push-pull [SEPP]; Phase-splitters therefor
    • H03F2203/30099—Indexing scheme relating to single-ended push-pull [SEPP]; Phase-splitters therefor the pull transistor being gated by a switching element
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/30—Indexing scheme relating to single-ended push-pull [SEPP]; Phase-splitters therefor
    • H03F2203/30117—Indexing scheme relating to single-ended push-pull [SEPP]; Phase-splitters therefor the push circuit of the SEPP amplifier being a cascode circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/30—Indexing scheme relating to single-ended push-pull [SEPP]; Phase-splitters therefor
    • H03F2203/30132—Indexing scheme relating to single-ended push-pull [SEPP]; Phase-splitters therefor the push transistor being gated by a switching element

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Power Engineering (AREA)
  • Electronic Switches (AREA)
  • Power Conversion In General (AREA)
  • Logic Circuits (AREA)
  • Dc-Dc Converters (AREA)
JP2017550205A 2015-03-27 2016-03-15 パワーｆｅｔのカスコードスタックの駆動 Pending JP2018512812A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/671,553 US9548739B2 (en) 2015-03-27 2015-03-27 Drive for cascode stack of power FETs
US14/671,553 2015-03-27
PCT/US2016/022506 WO2016160328A1 (en) 2015-03-27 2016-03-15 Drive for cascode stack of power fets

Publications (2)

Publication Number Publication Date
JP2018512812A true JP2018512812A (ja) 2018-05-17
JP2018512812A5 JP2018512812A5 (enExample) 2019-04-04

Family

ID=55637483

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017550205A Pending JP2018512812A (ja) 2015-03-27 2016-03-15 パワーｆｅｔのカスコードスタックの駆動

Country Status (6)

Country Link
US (1) US9548739B2 (enExample)
EP (1) EP3275079A1 (enExample)
JP (1) JP2018512812A (enExample)
KR (1) KR20170131452A (enExample)
CN (1) CN107438948A (enExample)
WO (1) WO2016160328A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200122055A (ko) * 2019-04-17 2020-10-27 한양대학교 산학협력단 시간 영역에서 제어되는 3-레벨 벅 컨버터 및 이의 제어 장치

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6597616B2 (ja) * 2014-08-04 2019-10-30 日本電気株式会社 スイッチング増幅器および無線送信機
US9793892B2 (en) 2016-03-10 2017-10-17 Peregrine Semiconductor Corporation High speed and high voltage driver
US10707813B2 (en) * 2018-12-06 2020-07-07 Apple Inc. High efficiency switching power amplifier
TWI715224B (zh) 2019-09-30 2021-01-01 瑞昱半導體股份有限公司 具有耐壓機制的輸出電路
KR102230129B1 (ko) * 2020-01-31 2021-03-22 청주대학교 산학협력단 부트스트랩 회로 및 이를 포함하는 전원 공급 장치
CN112910417B (zh) * 2021-01-15 2022-08-05 青海民族大学 一种宽带高效率微波功率放大器
US12149207B2 (en) 2021-05-18 2024-11-19 Intel Corporation High voltage digital power amplifier
TWI769027B (zh) 2021-07-27 2022-06-21 瑞昱半導體股份有限公司 靜電放電防護電路、驅動電路，以及預驅動電路及其積體電路版圖
JP2024059332A (ja) * 2022-10-18 2024-05-01 株式会社東芝 トランジスタ駆動回路及びトランジスタ駆動方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000059154A (ja) * 1998-08-05 2000-02-25 Nf Corp 高耐圧増幅装置
JP2005293817A (ja) * 2004-03-31 2005-10-20 Lg Phillips Lcd Co Ltd シフトレジスタとその駆動方法及び液晶表示パネルの駆動装置
US20070159373A1 (en) * 2006-01-10 2007-07-12 Dialog Semiconductor Gmbh High voltage digital driver with dynamically biased cascode transistors
US20100283439A1 (en) * 2009-05-09 2010-11-11 Cosmic Circuits Private Limited Efficient switch cascode architecture for switching devices
US20120200338A1 (en) * 2011-02-04 2012-08-09 Chris Olson Dynamic Biasing Systems and Methods

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7741910B2 (en) 2008-01-10 2010-06-22 Louis Sze Wong Capacitor gain-boost circuit
US8022772B2 (en) * 2009-03-19 2011-09-20 Qualcomm Incorporated Cascode amplifier with protection circuitry
US8106700B2 (en) * 2009-05-01 2012-01-31 Analog Devices, Inc. Wideband voltage translators
US8310283B2 (en) 2009-10-29 2012-11-13 Taiwan Semiconductor Manufacturing Company, Ltd. Over-drive circuit having stacked transistors
US8847636B2 (en) * 2012-04-10 2014-09-30 International Business Machines Corporation Implementing voltage feedback gate protection for CMOS output drivers
US20150014784A1 (en) 2013-07-12 2015-01-15 Delta Electronics, Inc. Cascode switch device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000059154A (ja) * 1998-08-05 2000-02-25 Nf Corp 高耐圧増幅装置
JP2005293817A (ja) * 2004-03-31 2005-10-20 Lg Phillips Lcd Co Ltd シフトレジスタとその駆動方法及び液晶表示パネルの駆動装置
US20070159373A1 (en) * 2006-01-10 2007-07-12 Dialog Semiconductor Gmbh High voltage digital driver with dynamically biased cascode transistors
US20100283439A1 (en) * 2009-05-09 2010-11-11 Cosmic Circuits Private Limited Efficient switch cascode architecture for switching devices
US20120200338A1 (en) * 2011-02-04 2012-08-09 Chris Olson Dynamic Biasing Systems and Methods

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200122055A (ko) * 2019-04-17 2020-10-27 한양대학교 산학협력단 시간 영역에서 제어되는 3-레벨 벅 컨버터 및 이의 제어 장치
KR102226373B1 (ko) 2019-04-17 2021-03-10 한양대학교 산학협력단 시간 영역에서 제어되는 3-레벨 벅 컨버터 및 이의 제어 장치

Also Published As

Publication number Publication date
US9548739B2 (en) 2017-01-17
KR20170131452A (ko) 2017-11-29
WO2016160328A1 (en) 2016-10-06
CN107438948A (zh) 2017-12-05
EP3275079A1 (en) 2018-01-31
US20160285454A1 (en) 2016-09-29

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