KR20170131452A - 파워 fet들의 캐스코드 스택용 드라이브 - Google Patents

파워 fet들의 캐스코드 스택용 드라이브 Download PDF

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Publication number
KR20170131452A
KR20170131452A KR1020177027061A KR20177027061A KR20170131452A KR 20170131452 A KR20170131452 A KR 20170131452A KR 1020177027061 A KR1020177027061 A KR 1020177027061A KR 20177027061 A KR20177027061 A KR 20177027061A KR 20170131452 A KR20170131452 A KR 20170131452A
Authority
KR
South Korea
Prior art keywords
control terminal
output
transistor device
transistor
signal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020177027061A
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English (en)
Korean (ko)
Inventor
비살 굽타
치판 영
조셉 던칸
Original Assignee
퀄컴 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 퀄컴 인코포레이티드 filed Critical 퀄컴 인코포레이티드
Publication of KR20170131452A publication Critical patent/KR20170131452A/ko
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/217—Class D power amplifiers; Switching amplifiers
    • H03F3/2173—Class D power amplifiers; Switching amplifiers of the bridge type
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/10—Modifications for increasing the maximum permissible switched voltage
    • H03K17/102—Modifications for increasing the maximum permissible switched voltage in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175—Coupling arrangements; Interface arrangements
    • H03K19/0185—Coupling arrangements; Interface arrangements using field effect transistors only
    • H03K19/018507—Interface arrangements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/30—Indexing scheme relating to single-ended push-pull [SEPP]; Phase-splitters therefor
    • H03F2203/30015—An input signal dependent control signal controls the bias of an output stage in the SEPP
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/30—Indexing scheme relating to single-ended push-pull [SEPP]; Phase-splitters therefor
    • H03F2203/30084—Indexing scheme relating to single-ended push-pull [SEPP]; Phase-splitters therefor the pull circuit of the SEPP amplifier being a cascode circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/30—Indexing scheme relating to single-ended push-pull [SEPP]; Phase-splitters therefor
    • H03F2203/30099—Indexing scheme relating to single-ended push-pull [SEPP]; Phase-splitters therefor the pull transistor being gated by a switching element
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/30—Indexing scheme relating to single-ended push-pull [SEPP]; Phase-splitters therefor
    • H03F2203/30117—Indexing scheme relating to single-ended push-pull [SEPP]; Phase-splitters therefor the push circuit of the SEPP amplifier being a cascode circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/30—Indexing scheme relating to single-ended push-pull [SEPP]; Phase-splitters therefor
    • H03F2203/30132—Indexing scheme relating to single-ended push-pull [SEPP]; Phase-splitters therefor the push transistor being gated by a switching element

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Power Engineering (AREA)
  • Electronic Switches (AREA)
  • Power Conversion In General (AREA)
  • Logic Circuits (AREA)
  • Dc-Dc Converters (AREA)
KR1020177027061A 2015-03-27 2016-03-15 파워 fet들의 캐스코드 스택용 드라이브 Withdrawn KR20170131452A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/671,553 US9548739B2 (en) 2015-03-27 2015-03-27 Drive for cascode stack of power FETs
US14/671,553 2015-03-27
PCT/US2016/022506 WO2016160328A1 (en) 2015-03-27 2016-03-15 Drive for cascode stack of power fets

Publications (1)

Publication Number Publication Date
KR20170131452A true KR20170131452A (ko) 2017-11-29

Family

ID=55637483

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020177027061A Withdrawn KR20170131452A (ko) 2015-03-27 2016-03-15 파워 fet들의 캐스코드 스택용 드라이브

Country Status (6)

Country Link
US (1) US9548739B2 (enExample)
EP (1) EP3275079A1 (enExample)
JP (1) JP2018512812A (enExample)
KR (1) KR20170131452A (enExample)
CN (1) CN107438948A (enExample)
WO (1) WO2016160328A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102230129B1 (ko) * 2020-01-31 2021-03-22 청주대학교 산학협력단 부트스트랩 회로 및 이를 포함하는 전원 공급 장치

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6597616B2 (ja) * 2014-08-04 2019-10-30 日本電気株式会社 スイッチング増幅器および無線送信機
US9793892B2 (en) 2016-03-10 2017-10-17 Peregrine Semiconductor Corporation High speed and high voltage driver
US10707813B2 (en) * 2018-12-06 2020-07-07 Apple Inc. High efficiency switching power amplifier
KR102226373B1 (ko) * 2019-04-17 2021-03-10 한양대학교 산학협력단 시간 영역에서 제어되는 3-레벨 벅 컨버터 및 이의 제어 장치
TWI715224B (zh) 2019-09-30 2021-01-01 瑞昱半導體股份有限公司 具有耐壓機制的輸出電路
CN112910417B (zh) * 2021-01-15 2022-08-05 青海民族大学 一种宽带高效率微波功率放大器
US12149207B2 (en) 2021-05-18 2024-11-19 Intel Corporation High voltage digital power amplifier
TWI769027B (zh) 2021-07-27 2022-06-21 瑞昱半導體股份有限公司 靜電放電防護電路、驅動電路，以及預驅動電路及其積體電路版圖
JP2024059332A (ja) * 2022-10-18 2024-05-01 株式会社東芝 トランジスタ駆動回路及びトランジスタ駆動方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4298012B2 (ja) * 1998-08-05 2009-07-15 株式会社エヌエフ回路設計ブロック 高耐圧増幅装置
US7289594B2 (en) * 2004-03-31 2007-10-30 Lg.Philips Lcd Co., Ltd. Shift registrer and driving method thereof
EP1806846B1 (en) * 2006-01-10 2015-03-18 Dialog Semiconductor GmbH High voltage digital driver with dynamically biased cascode transistors
US7741910B2 (en) 2008-01-10 2010-06-22 Louis Sze Wong Capacitor gain-boost circuit
US8022772B2 (en) * 2009-03-19 2011-09-20 Qualcomm Incorporated Cascode amplifier with protection circuitry
US8106700B2 (en) * 2009-05-01 2012-01-31 Analog Devices, Inc. Wideband voltage translators
US8237422B2 (en) 2009-05-09 2012-08-07 Cosmic Circuits Private Limited Efficient switch cascode architecture for switching devices
US8310283B2 (en) 2009-10-29 2012-11-13 Taiwan Semiconductor Manufacturing Company, Ltd. Over-drive circuit having stacked transistors
US8330504B2 (en) 2011-02-04 2012-12-11 Peregrine Semiconductor Corporation Dynamic biasing systems and methods
US8847636B2 (en) * 2012-04-10 2014-09-30 International Business Machines Corporation Implementing voltage feedback gate protection for CMOS output drivers
US20150014784A1 (en) 2013-07-12 2015-01-15 Delta Electronics, Inc. Cascode switch device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102230129B1 (ko) * 2020-01-31 2021-03-22 청주대학교 산학협력단 부트스트랩 회로 및 이를 포함하는 전원 공급 장치

Also Published As

Publication number Publication date
US9548739B2 (en) 2017-01-17
JP2018512812A (ja) 2018-05-17
WO2016160328A1 (en) 2016-10-06
CN107438948A (zh) 2017-12-05
EP3275079A1 (en) 2018-01-31
US20160285454A1 (en) 2016-09-29

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Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20170925

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination