CN107438948A - 针对功率fet的共源共栅堆叠的驱动 - Google Patents

针对功率fet的共源共栅堆叠的驱动 Download PDF

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Publication number
CN107438948A
CN107438948A CN201680018229.5A CN201680018229A CN107438948A CN 107438948 A CN107438948 A CN 107438948A CN 201680018229 A CN201680018229 A CN 201680018229A CN 107438948 A CN107438948 A CN 107438948A
Authority
CN
China
Prior art keywords
terminal
control terminal
transistor
lead
transistor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201680018229.5A
Other languages
English (en)
Chinese (zh)
Inventor
V·格普塔
C·容
J·邓肯
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Qualcomm Inc
Original Assignee
Qualcomm Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qualcomm Inc filed Critical Qualcomm Inc
Publication of CN107438948A publication Critical patent/CN107438948A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175—Coupling arrangements; Interface arrangements
    • H03K19/0185—Coupling arrangements; Interface arrangements using field effect transistors only
    • H03K19/018507—Interface arrangements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/217—Class D power amplifiers; Switching amplifiers
    • H03F3/2173—Class D power amplifiers; Switching amplifiers of the bridge type
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/10—Modifications for increasing the maximum permissible switched voltage
    • H03K17/102—Modifications for increasing the maximum permissible switched voltage in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/30—Indexing scheme relating to single-ended push-pull [SEPP]; Phase-splitters therefor
    • H03F2203/30015—An input signal dependent control signal controls the bias of an output stage in the SEPP
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/30—Indexing scheme relating to single-ended push-pull [SEPP]; Phase-splitters therefor
    • H03F2203/30084—Indexing scheme relating to single-ended push-pull [SEPP]; Phase-splitters therefor the pull circuit of the SEPP amplifier being a cascode circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/30—Indexing scheme relating to single-ended push-pull [SEPP]; Phase-splitters therefor
    • H03F2203/30099—Indexing scheme relating to single-ended push-pull [SEPP]; Phase-splitters therefor the pull transistor being gated by a switching element
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/30—Indexing scheme relating to single-ended push-pull [SEPP]; Phase-splitters therefor
    • H03F2203/30117—Indexing scheme relating to single-ended push-pull [SEPP]; Phase-splitters therefor the push circuit of the SEPP amplifier being a cascode circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/30—Indexing scheme relating to single-ended push-pull [SEPP]; Phase-splitters therefor
    • H03F2203/30132—Indexing scheme relating to single-ended push-pull [SEPP]; Phase-splitters therefor the push transistor being gated by a switching element

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Power Engineering (AREA)
  • Electronic Switches (AREA)
  • Power Conversion In General (AREA)
  • Logic Circuits (AREA)
  • Dc-Dc Converters (AREA)
CN201680018229.5A 2015-03-27 2016-03-15 针对功率fet的共源共栅堆叠的驱动 Pending CN107438948A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/671,553 2015-03-27
US14/671,553 US9548739B2 (en) 2015-03-27 2015-03-27 Drive for cascode stack of power FETs
PCT/US2016/022506 WO2016160328A1 (en) 2015-03-27 2016-03-15 Drive for cascode stack of power fets

Publications (1)

Publication Number Publication Date
CN107438948A true CN107438948A (zh) 2017-12-05

Family

ID=55637483

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201680018229.5A Pending CN107438948A (zh) 2015-03-27 2016-03-15 针对功率fet的共源共栅堆叠的驱动

Country Status (6)

Country Link
US (1) US9548739B2 (enExample)
EP (1) EP3275079A1 (enExample)
JP (1) JP2018512812A (enExample)
KR (1) KR20170131452A (enExample)
CN (1) CN107438948A (enExample)
WO (1) WO2016160328A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112910417A (zh) * 2021-01-15 2021-06-04 青海民族大学 一种宽带高效率微波功率放大器

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9954499B2 (en) * 2014-08-04 2018-04-24 Nec Corporation Switching amplifier and radio transmitter
US9793892B2 (en) * 2016-03-10 2017-10-17 Peregrine Semiconductor Corporation High speed and high voltage driver
US10707813B2 (en) * 2018-12-06 2020-07-07 Apple Inc. High efficiency switching power amplifier
KR102226373B1 (ko) * 2019-04-17 2021-03-10 한양대학교 산학협력단 시간 영역에서 제어되는 3-레벨 벅 컨버터 및 이의 제어 장치
TWI715224B (zh) 2019-09-30 2021-01-01 瑞昱半導體股份有限公司 具有耐壓機制的輸出電路
KR102230129B1 (ko) * 2020-01-31 2021-03-22 청주대학교 산학협력단 부트스트랩 회로 및 이를 포함하는 전원 공급 장치
US12149207B2 (en) * 2021-05-18 2024-11-19 Intel Corporation High voltage digital power amplifier
TWI769027B (zh) 2021-07-27 2022-06-21 瑞昱半導體股份有限公司 靜電放電防護電路、驅動電路，以及預驅動電路及其積體電路版圖
JP2024059332A (ja) * 2022-10-18 2024-05-01 株式会社東芝 トランジスタ駆動回路及びトランジスタ駆動方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7532701B2 (en) * 2004-03-31 2009-05-12 Lg Display Co. Ltd. Shift register and driving method thereof
CN101877537A (zh) * 2009-05-01 2010-11-03 阿纳洛格装置公司 宽带电压转换器
US20100283439A1 (en) * 2009-05-09 2010-11-11 Cosmic Circuits Private Limited Efficient switch cascode architecture for switching devices
CN102356542A (zh) * 2009-03-19 2012-02-15 高通股份有限公司 具有保护电路的共源共栅放大器
US20120200338A1 (en) * 2011-02-04 2012-08-09 Chris Olson Dynamic Biasing Systems and Methods

Family Cites Families (6)

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Publication number Priority date Publication date Assignee Title
JP4298012B2 (ja) * 1998-08-05 2009-07-15 株式会社エヌエフ回路設計ブロック 高耐圧増幅装置
EP1806846B1 (en) * 2006-01-10 2015-03-18 Dialog Semiconductor GmbH High voltage digital driver with dynamically biased cascode transistors
US7741910B2 (en) 2008-01-10 2010-06-22 Louis Sze Wong Capacitor gain-boost circuit
US8310283B2 (en) 2009-10-29 2012-11-13 Taiwan Semiconductor Manufacturing Company, Ltd. Over-drive circuit having stacked transistors
US8847636B2 (en) * 2012-04-10 2014-09-30 International Business Machines Corporation Implementing voltage feedback gate protection for CMOS output drivers
US20150014784A1 (en) 2013-07-12 2015-01-15 Delta Electronics, Inc. Cascode switch device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7532701B2 (en) * 2004-03-31 2009-05-12 Lg Display Co. Ltd. Shift register and driving method thereof
CN102356542A (zh) * 2009-03-19 2012-02-15 高通股份有限公司 具有保护电路的共源共栅放大器
CN101877537A (zh) * 2009-05-01 2010-11-03 阿纳洛格装置公司 宽带电压转换器
US20100283439A1 (en) * 2009-05-09 2010-11-11 Cosmic Circuits Private Limited Efficient switch cascode architecture for switching devices
US20120200338A1 (en) * 2011-02-04 2012-08-09 Chris Olson Dynamic Biasing Systems and Methods

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112910417A (zh) * 2021-01-15 2021-06-04 青海民族大学 一种宽带高效率微波功率放大器
CN112910417B (zh) * 2021-01-15 2022-08-05 青海民族大学 一种宽带高效率微波功率放大器

Also Published As

Publication number Publication date
US9548739B2 (en) 2017-01-17
KR20170131452A (ko) 2017-11-29
US20160285454A1 (en) 2016-09-29
WO2016160328A1 (en) 2016-10-06
JP2018512812A (ja) 2018-05-17
EP3275079A1 (en) 2018-01-31

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Effective date of abandoning: 20210702