JP2018503976A5 - - Google Patents

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Publication number
JP2018503976A5
JP2018503976A5 JP2017528424A JP2017528424A JP2018503976A5 JP 2018503976 A5 JP2018503976 A5 JP 2018503976A5 JP 2017528424 A JP2017528424 A JP 2017528424A JP 2017528424 A JP2017528424 A JP 2017528424A JP 2018503976 A5 JP2018503976 A5 JP 2018503976A5
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JP
Japan
Prior art keywords
layer
polysilicon
deep trench
forming
substrate
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JP2017528424A
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English (en)
Japanese (ja)
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JP6838829B2 (ja
JP2018503976A (ja
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Priority claimed from US14/555,300 external-priority patent/US9401410B2/en
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Publication of JP2018503976A publication Critical patent/JP2018503976A/ja
Publication of JP2018503976A5 publication Critical patent/JP2018503976A5/ja
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Publication of JP6838829B2 publication Critical patent/JP6838829B2/ja
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JP2017528424A 2014-11-26 2015-11-24 ディープトレンチ充填のためのポリサンドイッチ Active JP6838829B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/555,300 2014-11-26
US14/555,300 US9401410B2 (en) 2014-11-26 2014-11-26 Poly sandwich for deep trench fill
PCT/US2015/062265 WO2016085900A1 (en) 2014-11-26 2015-11-24 Poly sandwich for deep trench fill

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2020218162A Division JP7189403B2 (ja) 2014-11-26 2020-12-28 ディープトレンチ充填のためのポリサンドイッチ

Publications (3)

Publication Number Publication Date
JP2018503976A JP2018503976A (ja) 2018-02-08
JP2018503976A5 true JP2018503976A5 (enExample) 2018-12-27
JP6838829B2 JP6838829B2 (ja) 2021-03-03

Family

ID=56011017

Family Applications (2)

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JP2017528424A Active JP6838829B2 (ja) 2014-11-26 2015-11-24 ディープトレンチ充填のためのポリサンドイッチ
JP2020218162A Active JP7189403B2 (ja) 2014-11-26 2020-12-28 ディープトレンチ充填のためのポリサンドイッチ

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2020218162A Active JP7189403B2 (ja) 2014-11-26 2020-12-28 ディープトレンチ充填のためのポリサンドイッチ

Country Status (5)

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US (3) US9401410B2 (enExample)
EP (1) EP3224860B1 (enExample)
JP (2) JP6838829B2 (enExample)
CN (2) CN115863250A (enExample)
WO (1) WO2016085900A1 (enExample)

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CN107623028B (zh) * 2016-07-13 2021-02-19 环球晶圆股份有限公司 半导体基板及其加工方法
US10910223B2 (en) 2016-07-29 2021-02-02 Taiwan Semiconductor Manufacturing Company, Ltd. Doping through diffusion and epitaxy profile shaping
US9786665B1 (en) * 2016-08-16 2017-10-10 Texas Instruments Incorporated Dual deep trenches for high voltage isolation
US10355072B2 (en) * 2017-02-24 2019-07-16 Globalfoundries Singapore Pte. Ltd. Power trench capacitor compatible with deep trench isolation process
WO2018165809A1 (en) * 2017-03-13 2018-09-20 Texas Instruments Incorporated Transistor device with sinker contacts and methods for manufacturing the same
US10163680B1 (en) * 2017-09-19 2018-12-25 Texas Instruments Incorporated Sinker to buried layer connection region for narrow deep trenches
US10559650B2 (en) * 2018-01-23 2020-02-11 Texas Instruments Incorporated Trench capacitor with warpage reduction
US11894381B2 (en) 2018-10-30 2024-02-06 Taiwan Semiconductor Manufacturing Co., Ltd. Structures and methods for trench isolation
CN111128852B (zh) * 2018-10-30 2023-05-05 台湾积体电路制造股份有限公司 硅晶绝缘体结构、半导体结构以及形成半导体结构的方法
US10811543B2 (en) * 2018-12-26 2020-10-20 Texas Instruments Incorporated Semiconductor device with deep trench isolation and trench capacitor
US11756794B2 (en) 2019-11-01 2023-09-12 Texas Instruments Incorporated IC with deep trench polysilicon oxidation
US11682578B2 (en) * 2020-07-30 2023-06-20 Taiwan Semiconductor Manufacturing Co., Ltd. Multilayer isolation structure for high voltage silicon-on-insulator device
KR102823329B1 (ko) * 2020-09-14 2025-06-23 에스케이하이닉스 주식회사 반도체 장치 및 그의 제조방법
KR20230022369A (ko) 2021-08-06 2023-02-15 삼성전자주식회사 이미지 센서 및 그 제조 방법
US12237222B2 (en) * 2021-10-28 2025-02-25 Changxin Memory Technologies, Inc. Method for manufacturing semiconductor device and same
CN117747422B (zh) * 2024-02-21 2024-04-16 中国科学院长春光学精密机械与物理研究所 一种低应力深沟槽多晶栅及其制备方法
CN119053152A (zh) * 2024-10-25 2024-11-29 杭州积海半导体有限公司 eDRAM器件的形成方法

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US4666556A (en) 1986-05-12 1987-05-19 International Business Machines Corporation Trench sidewall isolation by polysilicon oxidation
US4728623A (en) * 1986-10-03 1988-03-01 International Business Machines Corporation Fabrication method for forming a self-aligned contact window and connection in an epitaxial layer and device structures employing the method
US4980747A (en) 1986-12-22 1990-12-25 Texas Instruments Inc. Deep trench isolation with surface contact to substrate
US4819052A (en) * 1986-12-22 1989-04-04 Texas Instruments Incorporated Merged bipolar/CMOS technology using electrically active trench
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CN100437970C (zh) * 2003-03-07 2008-11-26 琥珀波系统公司 一种结构及用于形成半导体结构的方法
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US9293357B2 (en) 2012-07-02 2016-03-22 Texas Instruments Incorporated Sinker with a reduced width
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US9160949B2 (en) * 2013-04-01 2015-10-13 Omnivision Technologies, Inc. Enhanced photon detection device with biased deep trench isolation

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