CN115863250A - 用于深沟槽填充的多夹层结构 - Google Patents

用于深沟槽填充的多夹层结构 Download PDF

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Publication number
CN115863250A
CN115863250A CN202211649776.7A CN202211649776A CN115863250A CN 115863250 A CN115863250 A CN 115863250A CN 202211649776 A CN202211649776 A CN 202211649776A CN 115863250 A CN115863250 A CN 115863250A
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layer
deep trench
polysilicon layer
substrate
polysilicon
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Chinese (zh)
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B·胡
S·P·彭哈卡
J·B·雅各布斯
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Texas Instruments Inc
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Texas Instruments Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
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    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
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    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
    • H10P14/3452—Microstructure
    • H10P14/3456—Polycrystalline
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    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6322—Formation by thermal treatments
    • H—ELECTRICITY
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    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
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    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
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    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/21—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically active species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
    • H10P32/1404—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase using predeposition followed by drive-in of impurities into the semiconductor surface, e.g. predeposition from a gaseous phase
    • H10P32/1406—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase using predeposition followed by drive-in of impurities into the semiconductor surface, e.g. predeposition from a gaseous phase by ion implantation
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    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/30—Diffusion for doping of conductive or resistive layers
    • H10P32/302—Doping polycrystalline silicon or amorphous silicon layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/041—Manufacture or treatment of isolation regions comprising polycrystalline semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/40—Isolation regions comprising polycrystalline semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H10D1/47—Resistors having no potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H10D1/66—Conductor-insulator-semiconductor capacitors, e.g. MOS capacitors
    • H10D1/665—Trench conductor-insulator-semiconductor capacitors, e.g. trench MOS capacitors

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  • Element Separation (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
CN202211649776.7A 2014-11-26 2015-11-24 用于深沟槽填充的多夹层结构 Pending CN115863250A (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US14/555,300 2014-11-26
US14/555,300 US9401410B2 (en) 2014-11-26 2014-11-26 Poly sandwich for deep trench fill
CN201580063337.XA CN107004632A (zh) 2014-11-26 2015-11-24 用于深沟槽填充的多夹层结构
PCT/US2015/062265 WO2016085900A1 (en) 2014-11-26 2015-11-24 Poly sandwich for deep trench fill

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN201580063337.XA Division CN107004632A (zh) 2014-11-26 2015-11-24 用于深沟槽填充的多夹层结构

Publications (1)

Publication Number Publication Date
CN115863250A true CN115863250A (zh) 2023-03-28

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CN202211649776.7A Pending CN115863250A (zh) 2014-11-26 2015-11-24 用于深沟槽填充的多夹层结构
CN201580063337.XA Pending CN107004632A (zh) 2014-11-26 2015-11-24 用于深沟槽填充的多夹层结构

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US (3) US9401410B2 (enExample)
EP (1) EP3224860B1 (enExample)
JP (2) JP6838829B2 (enExample)
CN (2) CN115863250A (enExample)
WO (1) WO2016085900A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117747422A (zh) * 2024-02-21 2024-03-22 中国科学院长春光学精密机械与物理研究所 一种低应力深沟槽多晶栅及其制备方法
CN119053152A (zh) * 2024-10-25 2024-11-29 杭州积海半导体有限公司 eDRAM器件的形成方法

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CN107623028B (zh) * 2016-07-13 2021-02-19 环球晶圆股份有限公司 半导体基板及其加工方法
US10910223B2 (en) * 2016-07-29 2021-02-02 Taiwan Semiconductor Manufacturing Company, Ltd. Doping through diffusion and epitaxy profile shaping
US9786665B1 (en) 2016-08-16 2017-10-10 Texas Instruments Incorporated Dual deep trenches for high voltage isolation
US10355072B2 (en) * 2017-02-24 2019-07-16 Globalfoundries Singapore Pte. Ltd. Power trench capacitor compatible with deep trench isolation process
CN110832617B (zh) * 2017-03-13 2024-04-16 德克萨斯仪器股份有限公司 具有下沉接触件的晶体管器件及其制造方法
US10163680B1 (en) * 2017-09-19 2018-12-25 Texas Instruments Incorporated Sinker to buried layer connection region for narrow deep trenches
US10559650B2 (en) * 2018-01-23 2020-02-11 Texas Instruments Incorporated Trench capacitor with warpage reduction
CN111128852B (zh) * 2018-10-30 2023-05-05 台湾积体电路制造股份有限公司 硅晶绝缘体结构、半导体结构以及形成半导体结构的方法
US11894381B2 (en) 2018-10-30 2024-02-06 Taiwan Semiconductor Manufacturing Co., Ltd. Structures and methods for trench isolation
US10811543B2 (en) * 2018-12-26 2020-10-20 Texas Instruments Incorporated Semiconductor device with deep trench isolation and trench capacitor
US11756794B2 (en) 2019-11-01 2023-09-12 Texas Instruments Incorporated IC with deep trench polysilicon oxidation
US11682578B2 (en) * 2020-07-30 2023-06-20 Taiwan Semiconductor Manufacturing Co., Ltd. Multilayer isolation structure for high voltage silicon-on-insulator device
KR102823329B1 (ko) * 2020-09-14 2025-06-23 에스케이하이닉스 주식회사 반도체 장치 및 그의 제조방법
KR20230022369A (ko) 2021-08-06 2023-02-15 삼성전자주식회사 이미지 센서 및 그 제조 방법
US12237222B2 (en) * 2021-10-28 2025-02-25 Changxin Memory Technologies, Inc. Method for manufacturing semiconductor device and same

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JPH05166823A (ja) * 1991-12-16 1993-07-02 Fujitsu Ltd 半導体装置の製造方法
JPH08236614A (ja) * 1995-02-27 1996-09-13 Nippondenso Co Ltd 半導体装置の製造方法
EP0966043A1 (en) * 1998-06-15 1999-12-22 Siemens Aktiengesellschaft A trench capacitor with isolation collar and corresponding manufacturing method
US20080012090A1 (en) * 2006-06-28 2008-01-17 Andreas Meiser Semiconductor component and methods for producing a semiconductor component
CN101681909A (zh) * 2007-06-14 2010-03-24 国际商业机器公司 垂直电流受控绝缘体上硅(soi)器件及其形成方法
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117747422A (zh) * 2024-02-21 2024-03-22 中国科学院长春光学精密机械与物理研究所 一种低应力深沟槽多晶栅及其制备方法
CN117747422B (zh) * 2024-02-21 2024-04-16 中国科学院长春光学精密机械与物理研究所 一种低应力深沟槽多晶栅及其制备方法
CN119053152A (zh) * 2024-10-25 2024-11-29 杭州积海半导体有限公司 eDRAM器件的形成方法

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JP2018503976A (ja) 2018-02-08
JP7189403B2 (ja) 2022-12-14
US20160308007A1 (en) 2016-10-20
US20160149011A1 (en) 2016-05-26
JP6838829B2 (ja) 2021-03-03
US20170125528A1 (en) 2017-05-04
US9583579B2 (en) 2017-02-28
EP3224860A1 (en) 2017-10-04
WO2016085900A1 (en) 2016-06-02
EP3224860B1 (en) 2019-08-28
EP3224860A4 (en) 2018-07-25
US9865691B2 (en) 2018-01-09
US9401410B2 (en) 2016-07-26
JP2021061432A (ja) 2021-04-15
CN107004632A (zh) 2017-08-01

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