JP2017527099A5 - - Google Patents

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Publication number
JP2017527099A5
JP2017527099A5 JP2016568050A JP2016568050A JP2017527099A5 JP 2017527099 A5 JP2017527099 A5 JP 2017527099A5 JP 2016568050 A JP2016568050 A JP 2016568050A JP 2016568050 A JP2016568050 A JP 2016568050A JP 2017527099 A5 JP2017527099 A5 JP 2017527099A5
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JP
Japan
Prior art keywords
fin
insulating material
integrated circuit
layer
circuit structure
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JP2016568050A
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English (en)
Japanese (ja)
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JP6399464B2 (ja
JP2017527099A (ja
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Priority claimed from PCT/US2014/046525 external-priority patent/WO2016010515A1/en
Publication of JP2017527099A publication Critical patent/JP2017527099A/ja
Publication of JP2017527099A5 publication Critical patent/JP2017527099A5/ja
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Publication of JP6399464B2 publication Critical patent/JP6399464B2/ja
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JP2016568050A 2014-07-14 2014-07-14 フィンベース電子装置のための固定ソース拡散接合 Active JP6399464B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2014/046525 WO2016010515A1 (en) 2014-07-14 2014-07-14 Solid-source diffused junction for fin-based electronics

Publications (3)

Publication Number Publication Date
JP2017527099A JP2017527099A (ja) 2017-09-14
JP2017527099A5 true JP2017527099A5 (enExample) 2017-10-26
JP6399464B2 JP6399464B2 (ja) 2018-10-03

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ID=55078851

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016568050A Active JP6399464B2 (ja) 2014-07-14 2014-07-14 フィンベース電子装置のための固定ソース拡散接合

Country Status (7)

Country Link
US (6) US9842944B2 (enExample)
EP (2) EP3170207A4 (enExample)
JP (1) JP6399464B2 (enExample)
KR (1) KR102241181B1 (enExample)
CN (2) CN106471624B (enExample)
TW (3) TWI628801B (enExample)
WO (1) WO2016010515A1 (enExample)

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* Cited by examiner, † Cited by third party
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EP3170207A4 (en) 2014-07-14 2018-03-28 Intel Corporation Solid-source diffused junction for fin-based electronics
EP3311399A4 (en) * 2015-06-22 2019-02-27 Intel Corporation GLASS WITH TWO HEIGHTS FOR FINFET DOTING
US9847388B2 (en) * 2015-09-01 2017-12-19 International Business Machines Corporation High thermal budget compatible punch through stop integration using doped glass
US9976650B1 (en) * 2017-02-01 2018-05-22 Deere & Company Forkless synchronizer with sensor rail arrangement
WO2018182615A1 (en) * 2017-03-30 2018-10-04 Intel Corporation Vertically stacked transistors in a fin
US10401122B2 (en) 2017-06-08 2019-09-03 Springfield, Inc. Free floating handguard anchoring system
US20190172920A1 (en) * 2017-12-06 2019-06-06 Nanya Technology Corporation Junctionless transistor device and method for preparing the same
EP3732729A4 (en) * 2017-12-27 2021-07-28 INTEL Corporation FINFET-BASED CAPACITORS AND RESISTORS AND ASSOCIATED APPARATUS, SYSTEMS AND PROCESSES
US10325819B1 (en) * 2018-03-13 2019-06-18 Globalfoundries Inc. Methods, apparatus and system for providing a pre-RMG replacement metal contact for a finFET device
KR102813445B1 (ko) * 2019-10-02 2025-05-27 삼성전자주식회사 집적회로 소자 및 그 제조 방법
CN113921520B (zh) * 2021-09-29 2024-08-06 上海晶丰明源半导体股份有限公司 射频开关器件及其制造方法

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JPH06260647A (ja) * 1993-03-04 1994-09-16 Sony Corp Ｘｍｏｓトランジスタの作製方法
US20020011612A1 (en) * 2000-07-31 2002-01-31 Kabushiki Kaisha Toshiba Semiconductor device and method for manufacturing the same
US7235436B1 (en) * 2003-07-08 2007-06-26 Advanced Micro Devices, Inc. Method for doping structures in FinFET devices
JP2005174964A (ja) * 2003-12-05 2005-06-30 National Institute Of Advanced Industrial & Technology 二重ゲート電界効果トランジスタ
JP4504214B2 (ja) * 2005-02-04 2010-07-14 株式会社東芝 Ｍｏｓ型半導体装置及びその製造方法
DE102005039365B4 (de) * 2005-08-19 2022-02-10 Infineon Technologies Ag Gate-gesteuertes Fin-Widerstandselement, welches als pinch - resistor arbeitet, zur Verwendung als ESD-Schutzelement in einem elektrischen Schaltkreis und Einrichtung zum Schutz vor elektrostatischen Entladungen in einem elektrischen Schaltkreis
US7402856B2 (en) * 2005-12-09 2008-07-22 Intel Corporation Non-planar microelectronic device having isolation element to mitigate fringe effects and method to fabricate same
US7560784B2 (en) * 2007-02-01 2009-07-14 International Business Machines Corporation Fin PIN diode
US8130547B2 (en) 2007-11-29 2012-03-06 Zeno Semiconductor, Inc. Method of maintaining the state of semiconductor memory having electrically floating body transistor
US8264032B2 (en) 2009-09-01 2012-09-11 Taiwan Semiconductor Manufacturing Company, Ltd. Accumulation type FinFET, circuits and fabrication method thereof
US8030144B2 (en) * 2009-10-09 2011-10-04 Globalfoundries Inc. Semiconductor device with stressed fin sections, and related fabrication methods
US8592918B2 (en) * 2009-10-28 2013-11-26 Taiwan Semiconductor Manufacturing Company, Ltd. Forming inter-device STI regions and intra-device STI regions using different dielectric materials
US8158500B2 (en) * 2010-01-27 2012-04-17 International Business Machines Corporation Field effect transistors (FETS) and methods of manufacture
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US8643108B2 (en) * 2011-08-19 2014-02-04 Altera Corporation Buffered finFET device
US9082853B2 (en) * 2012-10-31 2015-07-14 International Business Machines Corporation Bulk finFET with punchthrough stopper region and method of fabrication
US9299840B2 (en) * 2013-03-08 2016-03-29 Taiwan Semiconductor Manufacturing Company, Ltd. FinFETs and methods for forming the same
US9431497B2 (en) * 2013-05-21 2016-08-30 Globalfoundries Singapore Pte. Ltd. Transistor devices having an anti-fuse configuration and methods of forming the same
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CN104576383B (zh) * 2013-10-14 2017-09-12 中国科学院微电子研究所 一种FinFET结构及其制造方法
EP3170207A4 (en) * 2014-07-14 2018-03-28 Intel Corporation Solid-source diffused junction for fin-based electronics

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