CN104183632B - Rf‑ldmos自对准的漏端场板结构及制作方法 - Google Patents
Rf‑ldmos自对准的漏端场板结构及制作方法 Download PDFInfo
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- CN104183632B CN104183632B CN201410395633.7A CN201410395633A CN104183632B CN 104183632 B CN104183632 B CN 104183632B CN 201410395633 A CN201410395633 A CN 201410395633A CN 104183632 B CN104183632 B CN 104183632B
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- 238000002360 preparation method Methods 0.000 title description 5
- 239000002184 metal Substances 0.000 claims abstract description 43
- 229910021419 crystalline silicon Inorganic materials 0.000 claims abstract description 42
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims abstract description 36
- 239000000758 substrate Substances 0.000 claims abstract description 35
- 229910021332 silicide Inorganic materials 0.000 claims abstract description 32
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 28
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 27
- 229910052681 coesite Inorganic materials 0.000 claims abstract description 26
- 229910052906 cristobalite Inorganic materials 0.000 claims abstract description 26
- 229910052682 stishovite Inorganic materials 0.000 claims abstract description 26
- 229910052905 tridymite Inorganic materials 0.000 claims abstract description 26
- 230000004888 barrier function Effects 0.000 claims abstract description 23
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 11
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 10
- 239000013078 crystal Substances 0.000 claims description 2
- 230000000694 effects Effects 0.000 abstract description 10
- 230000015556 catabolic process Effects 0.000 abstract description 9
- 230000005684 electric field Effects 0.000 description 12
- 229910021417 amorphous silicon Inorganic materials 0.000 description 10
- 150000002500 ions Chemical class 0.000 description 10
- 238000000034 method Methods 0.000 description 9
- 238000002347 injection Methods 0.000 description 8
- 239000007924 injection Substances 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- ALKWEXBKAHPJAQ-NAKRPEOUSA-N Asn-Leu-Asp-Asp Chemical compound NC(=O)C[C@H](N)C(=O)N[C@@H](CC(C)C)C(=O)N[C@@H](CC(O)=O)C(=O)N[C@@H](CC(O)=O)C(O)=O ALKWEXBKAHPJAQ-NAKRPEOUSA-N 0.000 description 3
- 239000007788 liquid Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
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- 238000012986 modification Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- FGRBYDKOBBBPOI-UHFFFAOYSA-N 10,10-dioxo-2-[4-(N-phenylanilino)phenyl]thioxanthen-9-one Chemical compound O=C1c2ccccc2S(=O)(=O)c2ccc(cc12)-c1ccc(cc1)N(c1ccccc1)c1ccccc1 FGRBYDKOBBBPOI-UHFFFAOYSA-N 0.000 description 1
- 102100037981 Dickkopf-like protein 1 Human genes 0.000 description 1
- 101000951345 Homo sapiens Dickkopf-like protein 1 Proteins 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
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- 239000002019 doping agent Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
- H01L29/7823—Lateral DMOS transistors, i.e. LDMOS transistors with an edge termination structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/405—Resistive arrangements, e.g. resistive or semi-insulating field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
- H01L29/7835—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with asymmetrical source and drain regions, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims (4)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201410395633.7A CN104183632B (zh) | 2014-08-13 | 2014-08-13 | Rf‑ldmos自对准的漏端场板结构及制作方法 |
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CN201410395633.7A CN104183632B (zh) | 2014-08-13 | 2014-08-13 | Rf‑ldmos自对准的漏端场板结构及制作方法 |
Publications (2)
Publication Number | Publication Date |
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CN104183632A CN104183632A (zh) | 2014-12-03 |
CN104183632B true CN104183632B (zh) | 2017-08-29 |
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CN201410395633.7A Active CN104183632B (zh) | 2014-08-13 | 2014-08-13 | Rf‑ldmos自对准的漏端场板结构及制作方法 |
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Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN104465404B (zh) * | 2014-12-24 | 2017-10-24 | 上海华虹宏力半导体制造有限公司 | 射频ldmos器件的制造方法 |
CN106469755A (zh) * | 2015-08-21 | 2017-03-01 | 立锜科技股份有限公司 | 横向双扩散金属氧化物半导体元件及其制造方法 |
CN112151607B (zh) * | 2019-06-28 | 2023-08-08 | 中芯国际集成电路制造(上海)有限公司 | 半导体结构及其形成方法 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101673762A (zh) * | 2008-09-09 | 2010-03-17 | 上海华虹Nec电子有限公司 | Ldmos晶体管结构和制备方法 |
CN101707208A (zh) * | 2009-11-03 | 2010-05-12 | 苏州远创达科技有限公司 | 多重场板ldmos器件及其加工方法 |
CN102184863A (zh) * | 2011-04-08 | 2011-09-14 | 昆山华太电子科技有限公司 | 基于自对准硅化物和钨塞结构的rfldmos及其制备方法 |
CN102315164A (zh) * | 2011-10-21 | 2012-01-11 | 昆山华太电子技术有限公司 | 一种提高rf-ldmos器件及其集成电路性能的方法 |
CN102361035A (zh) * | 2011-10-21 | 2012-02-22 | 昆山华太电子技术有限公司 | 一种无外延层的rf-ldmos器件结构 |
CN102760771A (zh) * | 2012-07-30 | 2012-10-31 | 昆山华太电子技术有限公司 | 用于rf-ldmos器件的新型栅结构 |
CN102790090A (zh) * | 2012-07-20 | 2012-11-21 | 昆山华太电子技术有限公司 | 一种基于高k材料的ldmos器件 |
CN204102905U (zh) * | 2014-08-13 | 2015-01-14 | 昆山华太电子技术有限公司 | 一种rf-ldmos漏端场板结构 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8748271B2 (en) * | 2011-03-11 | 2014-06-10 | Globalfoundries Singapore Pte. Ltd. | LDMOS with improved breakdown voltage |
CN103426760B (zh) * | 2012-05-16 | 2016-02-10 | 上海华虹宏力半导体制造有限公司 | P型ldmos表面沟道器件的制造工艺 |
CN102709190B (zh) * | 2012-05-24 | 2017-04-26 | 上海华虹宏力半导体制造有限公司 | Ldmos场效应晶体管及其制作方法 |
CN103632974B (zh) * | 2012-08-24 | 2016-04-13 | 上海华虹宏力半导体制造有限公司 | P型ldmos表面沟道器件提高面内均匀性的制造方法 |
-
2014
- 2014-08-13 CN CN201410395633.7A patent/CN104183632B/zh active Active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101673762A (zh) * | 2008-09-09 | 2010-03-17 | 上海华虹Nec电子有限公司 | Ldmos晶体管结构和制备方法 |
CN101707208A (zh) * | 2009-11-03 | 2010-05-12 | 苏州远创达科技有限公司 | 多重场板ldmos器件及其加工方法 |
CN102184863A (zh) * | 2011-04-08 | 2011-09-14 | 昆山华太电子科技有限公司 | 基于自对准硅化物和钨塞结构的rfldmos及其制备方法 |
CN102315164A (zh) * | 2011-10-21 | 2012-01-11 | 昆山华太电子技术有限公司 | 一种提高rf-ldmos器件及其集成电路性能的方法 |
CN102361035A (zh) * | 2011-10-21 | 2012-02-22 | 昆山华太电子技术有限公司 | 一种无外延层的rf-ldmos器件结构 |
CN102790090A (zh) * | 2012-07-20 | 2012-11-21 | 昆山华太电子技术有限公司 | 一种基于高k材料的ldmos器件 |
CN102760771A (zh) * | 2012-07-30 | 2012-10-31 | 昆山华太电子技术有限公司 | 用于rf-ldmos器件的新型栅结构 |
CN204102905U (zh) * | 2014-08-13 | 2015-01-14 | 昆山华太电子技术有限公司 | 一种rf-ldmos漏端场板结构 |
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Address after: Room B0604, 388 Ruoshui Road, Suzhou Industrial Park, Wuzhong District, Suzhou City, Jiangsu Province Patentee after: SUZHOU HUATAI ELECTRONIC TECHNOLOGY Co.,Ltd. Address before: 215300 Xiuhai Road, Zhouzhuang Town, Kunshan City, Suzhou City, Jiangsu Province, 188 Patentee before: KUNSHAN HUATAI ELECTRONIC TECHNOLOGY Co.,Ltd. |
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Address after: 10-1F, Creative Industry Park, No. 328, Xinghu Street, Suzhou Industrial Park, Suzhou City, Jiangsu Province, 215000 Patentee after: Suzhou Huatai Electronic Technology Co.,Ltd. Address before: Room B0604, 388 Ruoshui Road, Suzhou Industrial Park, Wuzhong District, Suzhou City, Jiangsu Province Patentee before: SUZHOU HUATAI ELECTRONIC TECHNOLOGY Co.,Ltd. |