CN102184863A - 基于自对准硅化物和钨塞结构的rfldmos及其制备方法 - Google Patents
基于自对准硅化物和钨塞结构的rfldmos及其制备方法 Download PDFInfo
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- CN102184863A CN102184863A CN201110088161.7A CN201110088161A CN102184863A CN 102184863 A CN102184863 A CN 102184863A CN 201110088161 A CN201110088161 A CN 201110088161A CN 102184863 A CN102184863 A CN 102184863A
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- 229910021332 silicide Inorganic materials 0.000 title claims abstract description 37
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 title claims abstract description 37
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 title claims abstract description 24
- 229910052721 tungsten Inorganic materials 0.000 title claims abstract description 24
- 239000010937 tungsten Substances 0.000 title claims abstract description 24
- 238000004519 manufacturing process Methods 0.000 title abstract description 8
- 239000004065 semiconductor Substances 0.000 title abstract description 3
- 229910044991 metal oxide Inorganic materials 0.000 title abstract 2
- 150000004706 metal oxides Chemical class 0.000 title abstract 2
- 229910052751 metal Inorganic materials 0.000 claims abstract description 45
- 239000002184 metal Substances 0.000 claims abstract description 45
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 26
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 26
- 239000010703 silicon Substances 0.000 claims abstract description 26
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 18
- 238000000151 deposition Methods 0.000 claims abstract description 9
- 238000009792 diffusion process Methods 0.000 claims abstract description 9
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 9
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 13
- 229920005591 polysilicon Polymers 0.000 claims description 13
- 238000002360 preparation method Methods 0.000 claims description 12
- 230000008021 deposition Effects 0.000 claims description 7
- 239000010936 titanium Substances 0.000 claims description 6
- 239000002904 solvent Substances 0.000 claims description 5
- 238000004026 adhesive bonding Methods 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 239000010941 cobalt Substances 0.000 claims description 2
- 229910017052 cobalt Inorganic materials 0.000 claims description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 2
- 238000004070 electrodeposition Methods 0.000 claims description 2
- 238000004528 spin coating Methods 0.000 claims description 2
- 238000005200 wet scrubbing Methods 0.000 claims description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 1
- 238000011282 treatment Methods 0.000 abstract 2
- 238000000137 annealing Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 239000000758 substrate Substances 0.000 description 4
- UGACIEPFGXRWCH-UHFFFAOYSA-N [Si].[Ti] Chemical compound [Si].[Ti] UGACIEPFGXRWCH-UHFFFAOYSA-N 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- GDFCWFBWQUEQIJ-UHFFFAOYSA-N [B].[P] Chemical compound [B].[P] GDFCWFBWQUEQIJ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- AIOWANYIHSOXQY-UHFFFAOYSA-N cobalt silicon Chemical compound [Si].[Co] AIOWANYIHSOXQY-UHFFFAOYSA-N 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910000765 intermetallic Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- WNUPENMBHHEARK-UHFFFAOYSA-N silicon tungsten Chemical compound [Si].[W] WNUPENMBHHEARK-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
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CN201110088161.7A CN102184863B (zh) | 2011-04-08 | 2011-04-08 | 基于自对准硅化物和钨塞结构的rfldmos及其制备方法 |
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CN201110088161.7A CN102184863B (zh) | 2011-04-08 | 2011-04-08 | 基于自对准硅化物和钨塞结构的rfldmos及其制备方法 |
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CN102184863A true CN102184863A (zh) | 2011-09-14 |
CN102184863B CN102184863B (zh) | 2013-08-07 |
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Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103730449A (zh) * | 2012-10-12 | 2014-04-16 | 格罗方德半导体公司 | 半导体装置用的先进法拉第屏蔽 |
CN103855210A (zh) * | 2012-12-03 | 2014-06-11 | 上海华虹宏力半导体制造有限公司 | 射频横向双扩散场效应晶体管及其制造方法 |
CN104183632A (zh) * | 2014-08-13 | 2014-12-03 | 昆山华太电子技术有限公司 | Rf-ldmos自对准的漏端场板结构及制作方法 |
CN104425261A (zh) * | 2013-08-20 | 2015-03-18 | 上海华虹宏力半导体制造有限公司 | 射频ldmos器件的制造方法 |
CN105633146A (zh) * | 2014-10-27 | 2016-06-01 | 上海华虹宏力半导体制造有限公司 | Rfldmos器件及其制造方法 |
CN106298912A (zh) * | 2015-05-15 | 2017-01-04 | 联华电子股份有限公司 | 半导体结构及其制造方法 |
CN106847750A (zh) * | 2017-01-19 | 2017-06-13 | 上海宝芯源功率半导体有限公司 | 一种用于锂电保护的开关器件及其制作方法 |
CN106847749A (zh) * | 2017-01-19 | 2017-06-13 | 上海宝芯源功率半导体有限公司 | 一种用于锂电保护的开关器件及其制作方法 |
CN106920777A (zh) * | 2017-01-19 | 2017-07-04 | 上海宝芯源功率半导体有限公司 | 一种用于锂电保护的开关器件及其制作方法 |
CN107611089A (zh) * | 2017-09-19 | 2018-01-19 | 上海宝芯源功率半导体有限公司 | 用于锂电保护的开关器件及其制作方法 |
CN108831859A (zh) * | 2018-06-15 | 2018-11-16 | 武汉新芯集成电路制造有限公司 | 通孔的制造方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0967643A2 (en) * | 1998-06-22 | 1999-12-29 | International Business Machines Corporation | Low-resistance salicide fill for trench capacitors |
US6160293A (en) * | 1997-10-24 | 2000-12-12 | Nec Corporation | Sub-quarter micron silicon-on-insulator MOS field effect transistor with deep silicide contact layers |
CN1889248A (zh) * | 2005-06-29 | 2007-01-03 | 上海华虹Nec电子有限公司 | 一种减小超大规模集成电路接触孔电阻的方法 |
-
2011
- 2011-04-08 CN CN201110088161.7A patent/CN102184863B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6160293A (en) * | 1997-10-24 | 2000-12-12 | Nec Corporation | Sub-quarter micron silicon-on-insulator MOS field effect transistor with deep silicide contact layers |
EP0967643A2 (en) * | 1998-06-22 | 1999-12-29 | International Business Machines Corporation | Low-resistance salicide fill for trench capacitors |
CN1889248A (zh) * | 2005-06-29 | 2007-01-03 | 上海华虹Nec电子有限公司 | 一种减小超大规模集成电路接触孔电阻的方法 |
Cited By (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103730449B (zh) * | 2012-10-12 | 2016-09-07 | 格罗方德半导体公司 | 半导体装置用的先进法拉第屏蔽 |
CN103730449A (zh) * | 2012-10-12 | 2014-04-16 | 格罗方德半导体公司 | 半导体装置用的先进法拉第屏蔽 |
CN103855210A (zh) * | 2012-12-03 | 2014-06-11 | 上海华虹宏力半导体制造有限公司 | 射频横向双扩散场效应晶体管及其制造方法 |
CN104425261A (zh) * | 2013-08-20 | 2015-03-18 | 上海华虹宏力半导体制造有限公司 | 射频ldmos器件的制造方法 |
CN104183632B (zh) * | 2014-08-13 | 2017-08-29 | 昆山华太电子技术有限公司 | Rf‑ldmos自对准的漏端场板结构及制作方法 |
CN104183632A (zh) * | 2014-08-13 | 2014-12-03 | 昆山华太电子技术有限公司 | Rf-ldmos自对准的漏端场板结构及制作方法 |
CN105633146A (zh) * | 2014-10-27 | 2016-06-01 | 上海华虹宏力半导体制造有限公司 | Rfldmos器件及其制造方法 |
CN105633146B (zh) * | 2014-10-27 | 2019-01-04 | 上海华虹宏力半导体制造有限公司 | Rfldmos器件及其制造方法 |
CN106298912A (zh) * | 2015-05-15 | 2017-01-04 | 联华电子股份有限公司 | 半导体结构及其制造方法 |
CN106847749A (zh) * | 2017-01-19 | 2017-06-13 | 上海宝芯源功率半导体有限公司 | 一种用于锂电保护的开关器件及其制作方法 |
CN106920777A (zh) * | 2017-01-19 | 2017-07-04 | 上海宝芯源功率半导体有限公司 | 一种用于锂电保护的开关器件及其制作方法 |
CN106847750A (zh) * | 2017-01-19 | 2017-06-13 | 上海宝芯源功率半导体有限公司 | 一种用于锂电保护的开关器件及其制作方法 |
CN106847750B (zh) * | 2017-01-19 | 2020-04-03 | 上海宝芯源功率半导体有限公司 | 一种用于锂电保护的开关器件及其制作方法 |
CN106847749B (zh) * | 2017-01-19 | 2020-04-03 | 上海宝芯源功率半导体有限公司 | 一种用于锂电保护的开关器件及其制作方法 |
CN106920777B (zh) * | 2017-01-19 | 2020-05-19 | 上海宝芯源功率半导体有限公司 | 一种用于锂电保护的开关器件及其制作方法 |
CN107611089A (zh) * | 2017-09-19 | 2018-01-19 | 上海宝芯源功率半导体有限公司 | 用于锂电保护的开关器件及其制作方法 |
CN107611089B (zh) * | 2017-09-19 | 2024-03-26 | 宁波宝芯源功率半导体有限公司 | 用于锂电保护的开关器件及其制作方法 |
CN108831859A (zh) * | 2018-06-15 | 2018-11-16 | 武汉新芯集成电路制造有限公司 | 通孔的制造方法 |
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Correction item: Applicant Correct: KUNSHAN HUATAI ELECTRONIC TECHNOLOGY Co.,Ltd.|Kunshan City, Zhouzhuang Zhen Xiu Hai Lu Suzhou 215300 Jiangsu province No. 188 False: KUNSHAN HUATAI ELECTRONIC TECHNOLOGY Co.,Ltd.|Kunshan City, Zhouzhuang Zhen Xiu Hai Lu Suzhou 215300 Jiangsu province No. 188 Number: 37 Volume: 27 |
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Correction item: Applicant name Correct: KUNSHAN HUATAI ELECTRONIC TECHNOLOGY Co.,Ltd. False: KUNSHAN HUATAI ELECTRONIC TECHNOLOGY Co.,Ltd. Number: 37 Page: The title page Volume: 27 |
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Free format text: CORRECT: APPLICANT; FROM: KUNSHAN HUATAI ELECTRONIC SCIENCE + TECHNOLOGY CO., LTD.:215300 SUZHOU, JIANGSU PROVINCE TO: KUNSHAN HUATAI ELECTRONIC TECHNOLOGY CO., LTD.:215300 SUZHOU, JIANGSU PROVINCE |
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Address after: Room B0604, 388 Ruoshui Road, Suzhou Industrial Park, Wuzhong District, Suzhou City, Jiangsu Province Patentee after: SUZHOU HUATAI ELECTRONIC TECHNOLOGY Co.,Ltd. Address before: 215300 Xiuhai Road, Zhouzhuang Town, Kunshan City, Suzhou City, Jiangsu Province, 188 Patentee before: KUNSHAN HUATAI ELECTRONIC TECHNOLOGY Co.,Ltd. |
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Address after: Room b0604, 388 Ruoshui Road, Suzhou Industrial Park, 215000 Patentee after: Suzhou Huatai Electronic Technology Co.,Ltd. Address before: Room B0604, 388 Ruoshui Road, Suzhou Industrial Park, Wuzhong District, Suzhou City, Jiangsu Province Patentee before: SUZHOU HUATAI ELECTRONIC TECHNOLOGY Co.,Ltd. |
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