JP2018501757A5 - - Google Patents
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- Publication number
- JP2018501757A5 JP2018501757A5 JP2017529626A JP2017529626A JP2018501757A5 JP 2018501757 A5 JP2018501757 A5 JP 2018501757A5 JP 2017529626 A JP2017529626 A JP 2017529626A JP 2017529626 A JP2017529626 A JP 2017529626A JP 2018501757 A5 JP2018501757 A5 JP 2018501757A5
- Authority
- JP
- Japan
- Prior art keywords
- pack
- chuck
- inductor
- electrodes
- electrostatic chuck
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims 5
- 229910052751 metal Inorganic materials 0.000 claims 3
- 239000002184 metal Substances 0.000 claims 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 2
- 229910052721 tungsten Inorganic materials 0.000 claims 2
- 239000010937 tungsten Substances 0.000 claims 2
- 239000000919 ceramic Substances 0.000 claims 1
- 239000004020 conductor Substances 0.000 claims 1
- 239000007787 solid Substances 0.000 claims 1
- 230000035699 permeability Effects 0.000 description 3
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201462090858P | 2014-12-11 | 2014-12-11 | |
| US62/090,858 | 2014-12-11 | ||
| PCT/US2015/064494 WO2016094404A1 (en) | 2014-12-11 | 2015-12-08 | Electrostatic chuck for high temperature rf applications |
| US14/962,446 US9984911B2 (en) | 2014-12-11 | 2015-12-08 | Electrostatic chuck design for high temperature RF applications |
| US14/962,446 | 2015-12-08 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020146736A Division JP7069262B2 (ja) | 2014-12-11 | 2020-09-01 | 高温rf用途のための静電チャック |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2018501757A JP2018501757A (ja) | 2018-01-18 |
| JP2018501757A5 true JP2018501757A5 (enExample) | 2019-01-24 |
| JP6796066B2 JP6796066B2 (ja) | 2020-12-02 |
Family
ID=56108058
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017529626A Active JP6796066B2 (ja) | 2014-12-11 | 2015-12-08 | 高温rf用途のための静電チャック |
| JP2020146736A Active JP7069262B2 (ja) | 2014-12-11 | 2020-09-01 | 高温rf用途のための静電チャック |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020146736A Active JP7069262B2 (ja) | 2014-12-11 | 2020-09-01 | 高温rf用途のための静電チャック |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US9984911B2 (enExample) |
| JP (2) | JP6796066B2 (enExample) |
| KR (1) | KR102498784B1 (enExample) |
| TW (1) | TWI676235B (enExample) |
| WO (1) | WO2016094404A1 (enExample) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10892180B2 (en) * | 2014-06-02 | 2021-01-12 | Applied Materials, Inc. | Lift pin assembly |
| KR102322767B1 (ko) * | 2017-03-10 | 2021-11-08 | 삼성디스플레이 주식회사 | 기판과 스테이지 간의 분리 기구가 개선된 기판 처리 장치 및 그것을 이용한 기판 처리 방법 |
| US10147610B1 (en) | 2017-05-30 | 2018-12-04 | Lam Research Corporation | Substrate pedestal module including metallized ceramic tubes for RF and gas delivery |
| KR102098129B1 (ko) * | 2018-04-23 | 2020-04-07 | 주식회사 엠와이에스 | 정전기 척 |
| US10693433B2 (en) * | 2018-05-17 | 2020-06-23 | Lam Research Corporation | Electrostatic chuck filter box and mounting bracket |
| WO2020013938A1 (en) * | 2018-07-07 | 2020-01-16 | Applied Materials, Inc. | Semiconductor processing apparatus for high rf power process |
| US11031273B2 (en) * | 2018-12-07 | 2021-06-08 | Applied Materials, Inc. | Physical vapor deposition (PVD) electrostatic chuck with improved thermal coupling for temperature sensitive processes |
| CN111383894B (zh) * | 2018-12-29 | 2022-12-30 | 中微半导体设备(上海)股份有限公司 | 一种等离子处理器以及静电夹盘加热方法 |
| WO2020200442A1 (en) * | 2019-04-03 | 2020-10-08 | Applied Materials, Inc. | Sputter deposition source, sputter deposition apparatus, and method of powering a sputter deposition source |
| US11587773B2 (en) * | 2019-05-24 | 2023-02-21 | Applied Materials, Inc. | Substrate pedestal for improved substrate processing |
| JP7292115B2 (ja) * | 2019-06-07 | 2023-06-16 | 東京エレクトロン株式会社 | 温度調整装置及び温度制御方法。 |
| JP7341043B2 (ja) * | 2019-12-06 | 2023-09-08 | 東京エレクトロン株式会社 | 基板処理方法及び基板処理装置 |
| US11482444B2 (en) | 2020-03-10 | 2022-10-25 | Applied Materials, Inc. | High temperature micro-zone electrostatic chuck |
| US11784080B2 (en) | 2020-03-10 | 2023-10-10 | Applied Materials, Inc. | High temperature micro-zone electrostatic chuck |
Family Cites Families (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03188645A (ja) * | 1989-12-18 | 1991-08-16 | Ulvac Japan Ltd | 静電チャック電極 |
| JPH0453134A (ja) * | 1990-06-15 | 1992-02-20 | Sumitomo Metal Ind Ltd | 高周波バイアス電位測定用装置及び該装置の使用方法 |
| JPH06124998A (ja) * | 1992-10-12 | 1994-05-06 | Tadahiro Omi | プラズマ処理装置 |
| JP3306677B2 (ja) * | 1993-05-12 | 2002-07-24 | 東京エレクトロン株式会社 | 自己バイアス測定方法及び装置並びに静電吸着装置 |
| JP2976861B2 (ja) * | 1994-09-30 | 1999-11-10 | 日本電気株式会社 | 静電チャック及びその製造方法 |
| JP3208044B2 (ja) * | 1995-06-07 | 2001-09-10 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
| US5812361A (en) * | 1996-03-29 | 1998-09-22 | Lam Research Corporation | Dynamic feedback electrostatic wafer chuck |
| JP4004637B2 (ja) * | 1998-05-12 | 2007-11-07 | 株式会社アルバック | 静電チャック、加熱冷却装置、加熱冷却方法及び真空処理装置 |
| EP1194954B1 (en) | 1999-07-08 | 2011-05-18 | Lam Research Corporation | Electrostatic chuck and its manufacturing method |
| JP3659180B2 (ja) * | 2000-03-24 | 2005-06-15 | 株式会社日立製作所 | 半導体製造装置および処理方法、およびウエハ電位プローブ |
| JP4590031B2 (ja) | 2000-07-26 | 2010-12-01 | 東京エレクトロン株式会社 | 被処理体の載置機構 |
| TW519716B (en) * | 2000-12-19 | 2003-02-01 | Tokyo Electron Ltd | Wafer bias drive for a plasma source |
| US6673636B2 (en) | 2001-05-18 | 2004-01-06 | Applied Materails Inc. | Method of real-time plasma charging voltage measurement on powered electrode with electrostatic chuck in plasma process chambers |
| JP4928817B2 (ja) | 2006-04-07 | 2012-05-09 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
| US8192576B2 (en) * | 2006-09-20 | 2012-06-05 | Lam Research Corporation | Methods of and apparatus for measuring and controlling wafer potential in pulsed RF bias processing |
| KR100819078B1 (ko) * | 2006-11-27 | 2008-04-02 | 삼성전자주식회사 | 정전 척에서 웨이퍼를 디척킹하는 장치 및 방법 |
| US7733095B2 (en) * | 2007-08-15 | 2010-06-08 | Applied Materials, Inc. | Apparatus for wafer level arc detection at an RF bias impedance match to the pedestal electrode |
| US7750645B2 (en) | 2007-08-15 | 2010-07-06 | Applied Materials, Inc. | Method of wafer level transient sensing, threshold comparison and arc flag generation/deactivation |
| US7737702B2 (en) | 2007-08-15 | 2010-06-15 | Applied Materials, Inc. | Apparatus for wafer level arc detection at an electrostatic chuck electrode |
| US7750644B2 (en) * | 2007-08-15 | 2010-07-06 | Applied Materials, Inc. | System with multi-location arc threshold comparators and communication channels for carrying arc detection flags and threshold updating |
| JP2009170509A (ja) * | 2008-01-11 | 2009-07-30 | Hitachi High-Technologies Corp | ヒータ内蔵静電チャックを備えたプラズマ処理装置 |
| JP4898718B2 (ja) * | 2008-02-08 | 2012-03-21 | 東京エレクトロン株式会社 | 載置台及びプラズマ処理装置 |
| EP2321846A4 (en) * | 2008-08-12 | 2012-03-14 | Applied Materials Inc | ELECTROSTATIC FODDER ASSEMBLY |
| KR101123584B1 (ko) * | 2009-09-17 | 2012-03-22 | 주성엔지니어링(주) | 플라즈마 처리장치 및 처리방법 |
| US20110209995A1 (en) * | 2010-03-01 | 2011-09-01 | Applied Materials, Inc. | Physical Vapor Deposition With A Variable Capacitive Tuner and Feedback Circuit |
| JP6195519B2 (ja) * | 2010-08-06 | 2017-09-13 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 静電チャック及びその使用方法 |
| JP5740246B2 (ja) * | 2011-08-15 | 2015-06-24 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置およびプラズマ処理方法 |
| US10049948B2 (en) * | 2012-11-30 | 2018-08-14 | Lam Research Corporation | Power switching system for ESC with array of thermal control elements |
| US10234261B2 (en) * | 2013-06-12 | 2019-03-19 | Applied Materials, Inc. | Fast and continuous eddy-current metrology of a conductive film |
-
2015
- 2015-12-08 JP JP2017529626A patent/JP6796066B2/ja active Active
- 2015-12-08 WO PCT/US2015/064494 patent/WO2016094404A1/en not_active Ceased
- 2015-12-08 US US14/962,446 patent/US9984911B2/en active Active
- 2015-12-08 KR KR1020177019111A patent/KR102498784B1/ko active Active
- 2015-12-10 TW TW104141564A patent/TWI676235B/zh active
-
2020
- 2020-09-01 JP JP2020146736A patent/JP7069262B2/ja active Active
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