TWI676235B - 用於高溫ｒｆ應用的靜電吸座 - Google Patents

用於高溫ｒｆ應用的靜電吸座 Download PDF

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Publication number
TWI676235B
TWI676235B TW104141564A TW104141564A TWI676235B TW I676235 B TWI676235 B TW I676235B TW 104141564 A TW104141564 A TW 104141564A TW 104141564 A TW104141564 A TW 104141564A TW I676235 B TWI676235 B TW I676235B
Authority
TW
Taiwan
Prior art keywords
positioning plate
electrodes
inductor
substrate
electrostatic
Prior art date
Application number
TW104141564A
Other languages
English (en)
Chinese (zh)
Other versions
TW201633449A (zh
Inventor
韓森萊恩
Ryan Hanson
高帕曼裘那薩
Manjunatha KOPPA
帕克維傑Ｄ
Vijay D. Parkhe
福斯特約翰Ｃ
John C. Forster
米勒凱斯Ａ
Keith A. Miller
Original Assignee
美商應用材料股份有限公司
Applied Materials, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 美商應用材料股份有限公司, Applied Materials, Inc. filed Critical 美商應用材料股份有限公司
Publication of TW201633449A publication Critical patent/TW201633449A/zh
Application granted granted Critical
Publication of TWI676235B publication Critical patent/TWI676235B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23Q—DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
    • B23Q3/00—Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine
    • B23Q3/15—Devices for holding work using magnetic or electric force acting directly on the work
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
TW104141564A 2014-12-11 2015-12-10 用於高溫ｒｆ應用的靜電吸座 TWI676235B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201462090858P 2014-12-11 2014-12-11
US62/090,858 2014-12-11
US14/962,446 US9984911B2 (en) 2014-12-11 2015-12-08 Electrostatic chuck design for high temperature RF applications
US14/962,446 2015-12-08

Publications (2)

Publication Number Publication Date
TW201633449A TW201633449A (zh) 2016-09-16
TWI676235B true TWI676235B (zh) 2019-11-01

Family

ID=56108058

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104141564A TWI676235B (zh) 2014-12-11 2015-12-10 用於高溫ｒｆ應用的靜電吸座

Country Status (5)

Country Link
US (1) US9984911B2 (enExample)
JP (2) JP6796066B2 (enExample)
KR (1) KR102498784B1 (enExample)
TW (1) TWI676235B (enExample)
WO (1) WO2016094404A1 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10892180B2 (en) * 2014-06-02 2021-01-12 Applied Materials, Inc. Lift pin assembly
KR102322767B1 (ko) * 2017-03-10 2021-11-08 삼성디스플레이 주식회사 기판과 스테이지 간의 분리 기구가 개선된 기판 처리 장치 및 그것을 이용한 기판 처리 방법
US10147610B1 (en) 2017-05-30 2018-12-04 Lam Research Corporation Substrate pedestal module including metallized ceramic tubes for RF and gas delivery
KR102098129B1 (ko) * 2018-04-23 2020-04-07 주식회사 엠와이에스 정전기 척
US10693433B2 (en) * 2018-05-17 2020-06-23 Lam Research Corporation Electrostatic chuck filter box and mounting bracket
WO2020013938A1 (en) * 2018-07-07 2020-01-16 Applied Materials, Inc. Semiconductor processing apparatus for high rf power process
US11031273B2 (en) * 2018-12-07 2021-06-08 Applied Materials, Inc. Physical vapor deposition (PVD) electrostatic chuck with improved thermal coupling for temperature sensitive processes
CN111383894B (zh) * 2018-12-29 2022-12-30 中微半导体设备(上海)股份有限公司 一种等离子处理器以及静电夹盘加热方法
WO2020200442A1 (en) * 2019-04-03 2020-10-08 Applied Materials, Inc. Sputter deposition source, sputter deposition apparatus, and method of powering a sputter deposition source
US11587773B2 (en) * 2019-05-24 2023-02-21 Applied Materials, Inc. Substrate pedestal for improved substrate processing
JP7292115B2 (ja) * 2019-06-07 2023-06-16 東京エレクトロン株式会社 温度調整装置及び温度制御方法。
JP7341043B2 (ja) * 2019-12-06 2023-09-08 東京エレクトロン株式会社 基板処理方法及び基板処理装置
US11482444B2 (en) 2020-03-10 2022-10-25 Applied Materials, Inc. High temperature micro-zone electrostatic chuck
US11784080B2 (en) 2020-03-10 2023-10-10 Applied Materials, Inc. High temperature micro-zone electrostatic chuck

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090044748A1 (en) * 2007-08-15 2009-02-19 Applied Materials, Inc. System with multi-location arc threshold comparators and communication channels for carrying arc detection flags and threshold updating

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03188645A (ja) * 1989-12-18 1991-08-16 Ulvac Japan Ltd 静電チャック電極
JPH0453134A (ja) * 1990-06-15 1992-02-20 Sumitomo Metal Ind Ltd 高周波バイアス電位測定用装置及び該装置の使用方法
JPH06124998A (ja) * 1992-10-12 1994-05-06 Tadahiro Omi プラズマ処理装置
JP3306677B2 (ja) * 1993-05-12 2002-07-24 東京エレクトロン株式会社 自己バイアス測定方法及び装置並びに静電吸着装置
JP2976861B2 (ja) * 1994-09-30 1999-11-10 日本電気株式会社 静電チャック及びその製造方法
JP3208044B2 (ja) * 1995-06-07 2001-09-10 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
US5812361A (en) * 1996-03-29 1998-09-22 Lam Research Corporation Dynamic feedback electrostatic wafer chuck
JP4004637B2 (ja) * 1998-05-12 2007-11-07 株式会社アルバック 静電チャック、加熱冷却装置、加熱冷却方法及び真空処理装置
EP1194954B1 (en) 1999-07-08 2011-05-18 Lam Research Corporation Electrostatic chuck and its manufacturing method
JP3659180B2 (ja) * 2000-03-24 2005-06-15 株式会社日立製作所 半導体製造装置および処理方法、およびウエハ電位プローブ
JP4590031B2 (ja) 2000-07-26 2010-12-01 東京エレクトロン株式会社 被処理体の載置機構
TW519716B (en) * 2000-12-19 2003-02-01 Tokyo Electron Ltd Wafer bias drive for a plasma source
US6673636B2 (en) 2001-05-18 2004-01-06 Applied Materails Inc. Method of real-time plasma charging voltage measurement on powered electrode with electrostatic chuck in plasma process chambers
JP4928817B2 (ja) 2006-04-07 2012-05-09 株式会社日立ハイテクノロジーズ プラズマ処理装置
US8192576B2 (en) * 2006-09-20 2012-06-05 Lam Research Corporation Methods of and apparatus for measuring and controlling wafer potential in pulsed RF bias processing
KR100819078B1 (ko) * 2006-11-27 2008-04-02 삼성전자주식회사 정전 척에서 웨이퍼를 디척킹하는 장치 및 방법
US7733095B2 (en) * 2007-08-15 2010-06-08 Applied Materials, Inc. Apparatus for wafer level arc detection at an RF bias impedance match to the pedestal electrode
US7750645B2 (en) 2007-08-15 2010-07-06 Applied Materials, Inc. Method of wafer level transient sensing, threshold comparison and arc flag generation/deactivation
US7737702B2 (en) 2007-08-15 2010-06-15 Applied Materials, Inc. Apparatus for wafer level arc detection at an electrostatic chuck electrode
JP2009170509A (ja) * 2008-01-11 2009-07-30 Hitachi High-Technologies Corp ヒータ内蔵静電チャックを備えたプラズマ処理装置
JP4898718B2 (ja) * 2008-02-08 2012-03-21 東京エレクトロン株式会社 載置台及びプラズマ処理装置
EP2321846A4 (en) * 2008-08-12 2012-03-14 Applied Materials Inc ELECTROSTATIC FODDER ASSEMBLY
KR101123584B1 (ko) * 2009-09-17 2012-03-22 주성엔지니어링(주) 플라즈마 처리장치 및 처리방법
US20110209995A1 (en) * 2010-03-01 2011-09-01 Applied Materials, Inc. Physical Vapor Deposition With A Variable Capacitive Tuner and Feedback Circuit
JP6195519B2 (ja) * 2010-08-06 2017-09-13 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 静電チャック及びその使用方法
JP5740246B2 (ja) * 2011-08-15 2015-06-24 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
US10049948B2 (en) * 2012-11-30 2018-08-14 Lam Research Corporation Power switching system for ESC with array of thermal control elements
US10234261B2 (en) * 2013-06-12 2019-03-19 Applied Materials, Inc. Fast and continuous eddy-current metrology of a conductive film

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090044748A1 (en) * 2007-08-15 2009-02-19 Applied Materials, Inc. System with multi-location arc threshold comparators and communication channels for carrying arc detection flags and threshold updating

Also Published As

Publication number Publication date
WO2016094404A1 (en) 2016-06-16
KR102498784B1 (ko) 2023-02-09
JP2018501757A (ja) 2018-01-18
JP7069262B2 (ja) 2022-05-17
KR20170093955A (ko) 2017-08-16
JP2021002666A (ja) 2021-01-07
JP6796066B2 (ja) 2020-12-02
TW201633449A (zh) 2016-09-16
US9984911B2 (en) 2018-05-29
US20160172227A1 (en) 2016-06-16

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